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12 Jan 1998

Volume 72, Issue 2, pp. 135-266

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Hydrogenated amorphous silicon transverse junction solar cell

M. A. Kroon, R. A. C. M. M. van Swaaij, M. Zeman, V. I. Kuznetsov, and J. W. Metselaar

Appl. Phys. Lett. 72, 209 (1998); http://dx.doi.org/10.1063/1.120687 (2 pages) | Cited 4 times

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In this letter, we introduce a new thin film solar cell design on amorphous silicon, called the transverse junction solar cell. In this concept, the p-i-n junction is formed perpendicular to the surface. With conventional deposition and silicon device processing techniques test cells have been made with a conversion efficiency up to 5.2%±1.4% under standard AM1.5 illumination. © 1998 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
84.60.Jt Photoelectric conversion

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, and Kazuyuki Chocho

Appl. Phys. Lett. 72, 211 (1998); http://dx.doi.org/10.1063/1.120688 (3 pages) | Cited 313 times

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InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 μm etching of the ELOG substrate, the etch pit density was about 2×108 cm2 in the region of the 4-μm-wide stripe window, but almost zero in the region of the 7-μm-wide SiO2 stripe. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots

D. L. Huffaker, L. A. Graham, and D. G. Deppe

Appl. Phys. Lett. 72, 214 (1998); http://dx.doi.org/10.1063/1.120689 (3 pages) | Cited 14 times

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Data are presented on the electroluminescence from an ensemble of self-organized quantum dots excited at low current densities. The ensemble contains ∼ 105 dots, which produce a ground state spectral emission with a 14 K linewidth of ∼1 meV at low current density ( ∼ 5×10−2 A/cm2). While the spectra show clearly discrete energy levels, we suggest that obtaining a single ground state emission from the ensemble may be due to interdot electronic coupling. Spectral broadening decreases for decreasing current density due to electronic state filling, even for the lowest current densities studied. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates

E. Tournié, C. Ongaretto, M. Laügt, and J.-P. Faurie

Appl. Phys. Lett. 72, 217 (1998); http://dx.doi.org/10.1063/1.120690 (3 pages) | Cited 1 time

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We study through high-resolution x-ray diffraction (HRXRD) and photoluminescence spectroscopy a series of Zn1−xCdxSe/ZnSe multi-quantum-well heterostructures grown by molecular-beam epitaxy on relaxed ZnSe buffer layers, themselves grown on bare GaAs substrates. We show that HRXRD experiments combined with simulations allow one to accurately assess the strain state of the heterostructures which appear to follow closely the Matthews and Blakeslee model [J. Cryst. Growth 27, 118 (1974)]. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

A. Konkar, A. Madhukar, and P. Chen

Appl. Phys. Lett. 72, 220 (1998); http://dx.doi.org/10.1063/1.120691 (3 pages) | Cited 66 times

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The lattice-mismatch stress-induced two-dimensional-to-three-dimensional morphology change is combined with interfacet adatom migration to selectively assemble parallel chains of InAs islands on top of [110] oriented stripe mesas of sub-100-nm widths on GaAs(001) substrates. On such mesa stripes, prepared in situ via size-reducing epitaxy, deposition of InAs amounts subcritical for island formation on planar GaAs (001) is shown to allow self-assembly of three, two, and single chains of InAs three-dimensional island quantum dots selectively on the stripe mesa tops for widths decreasing from 100 nm down to 30 nm. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

G. Kissinger, G. Morgenstern, J. Vanhellemont, D. Gräf, U. Lambert, and H. Richter

Appl. Phys. Lett. 72, 223 (1998); http://dx.doi.org/10.1063/1.120692 (3 pages) | Cited 2 times

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Fast pulled Czochralski silicon crystals usually contain large octahedral vacancy agglomerates. These voids are known as D defects, which degrade the integrity of thin gate oxides by causing time zero dielectric breakdown. After annealing the wafers at temperatures above 1100 °C, the gate oxide integrity is clearly improved. We show by theoretical estimation, light-scattering tomography and transmission electron microscopy studies that the vacancy agglomerates can be filled with silicon oxide by internal oxidation. This is brought about by diffusion of interstitial oxygen to the voids, which can be regarded as internal surfaces. In this way they become less detrimental for thin gate oxides, because now they consist of silicon oxide itself. However, they are still present in an octahedral-like geometry and can be observed by Brewster angle infrared light-scattering tomography. © 1998 American Institute of Physics.  
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
81.10.Fq Growth from melts; zone melting and refining
66.30.J- Diffusion of impurities

Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing

S. Ruvimov, Ch. Dicker, J. Washburn, and Z. Liliental-Weber

Appl. Phys. Lett. 72, 226 (1998); http://dx.doi.org/10.1063/1.120693 (3 pages) | Cited 5 times

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High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.Mm Grain and twin boundaries
61.72.Qq Microscopic defects (voids, inclusions, etc.)
64.70.K- Solid-solid transitions
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells

J. T. Olesberg, S. A. Anson, S. W. McCahon, Michael E. Flatté, Thomas F. Boggess, D. H. Chow, and T. C. Hasenberg

Appl. Phys. Lett. 72, 229 (1998); http://dx.doi.org/10.1063/1.120694 (3 pages) | Cited 12 times

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A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap (GaInSb/InAs)/AlGaSb superlattice multiple quantum well structure. Similar structures have been implemented recently as the active region in midinfrared diode lasers. The measured spectra are compared with calculated spectra computed using a semiempirical eight-band superlattice K⋅p model. The model provides good agreement with the experimentally observed spectral and density dependence of the absorption. These results provide confirmation that the model may be used for band structure engineering of optimized midinfrared laser active regions. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes

D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson, and G. M. Dunn

Appl. Phys. Lett. 72, 232 (1998); http://dx.doi.org/10.1063/1.120695 (3 pages) | Cited 9 times

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We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p+-i-n+ GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 μm, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
02.70.Rr General statistical methods
02.50.Ng Distribution theory and Monte Carlo studies

Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering

K. Yamaya, Y. Yamaki, H. Nakanishi, and S. Chichibu

Appl. Phys. Lett. 72, 235 (1998); http://dx.doi.org/10.1063/1.120707 (3 pages) | Cited 30 times

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Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300 °C showed a resistivity of 5×10−4 Ω cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
73.61.Ga II-VI semiconductors
78.40.Fy Semiconductors
78.66.Hf II-VI semiconductors

Coupled maximum entropy: Monte Carlo Estimation of microwave, millimeter-wave and submillimeter-wave spectrum of velocity fluctuations in GaAs

Jose Miguel Miranda Pantoja, Jose Luis Sebastián Franco, and Sagrario Muñoz San Martin

Appl. Phys. Lett. 72, 238 (1998); http://dx.doi.org/10.1063/1.120696 (3 pages) | Cited 1 time

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The maximum entropy method is presented in this letter as a highly interesting procedure for the investigation of high frequency noise properties of bulk semiconductors and electron devices at microscopic level. A Monte Carlo simulation of the hot electron velocity fluctuations in bulk GaAs has been performed to illustrate the efficiency and usefulness of this procedure. Comparisons with the most popular techniques presently used in Monte Carlo simulations of noise have also been performed. © 1998 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.70.+m Noise processes and phenomena
73.50.Fq High-field and nonlinear effects
73.50.Td Noise processes and phenomena
73.61.Ey III-V semiconductors
78.70.Gq Microwave and radio-frequency interactions

Characterization of nonradiative traps by hot electron–hole plasma luminescence dynamics in polar semiconductors

S. Juršėnas, G. Tamulaitis, G. Kurilčik, and A. Žukauskas

Appl. Phys. Lett. 72, 241 (1998); http://dx.doi.org/10.1063/1.120697 (3 pages) | Cited 4 times

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Luminescence intensity dependence on excitation intensity has been studied at quasi-steady-state conditions in CdS and CdSe crystals at T = 294 K and interpreted, with heating of photoelectrons taken into account. The shape of the dependence indicates a reduction of carrier density due to increased effective temperature. A method for estimating the height of the barrier for centers governing the thermally activated nonradiative capture by multiphonon emission is proposed. The barrier heights of 140 and 170 meV in CdS and CdSe, respectively, have been estimated. © 1998 American Institute of Physics.
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78.55.Et II-VI semiconductors
63.20.K- Phonon interactions

Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy

John T. Torvik, Jacques I. Pankove, Eleftherios Iliopoulos, Hock M. Ng, and Theodore D. Moustakas

Appl. Phys. Lett. 72, 244 (1998); http://dx.doi.org/10.1063/1.120698 (2 pages) | Cited 9 times

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We investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence was observed at 3.40 eV from the GaN on both SiO2/SiC and on SiC. No defect-related yellow luminescence was observed. The refractive index of GaN at 1.96 eV (632.8 nm) was measured at 2.22 and 2.24 for GaN/SiO2/SiC and GaN/SiC, respectively. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Cr III-V semiconductors
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Smoothing of YBa2Cu3O7−δ films by ion cluster beam bombardment

W. K. Chu, Y. P. Li, J. R. Liu, J. Z. Wu, S. C. Tidrow, N. Toyoda, J. Matsuo, and I. Yamada

Appl. Phys. Lett. 72, 246 (1998); http://dx.doi.org/10.1063/1.120699 (3 pages) | Cited 17 times

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Smoothing high-temperature superconductor (HTS) surfaces, especially HTS thin-film surfaces, is crucial for HTS thin-film device processing. In this letter, we describe a method to planarize the surface of a YBa2Cu3O7−δ HTS film down to a smoothness with a standard deviation of 1 nm or better. The method includes first smoothing the HTS surface by ion cluster beam bombardment, followed by annealing in oxygen ambient to regrow the damaged surface layer. Additional YBCO layers can be grown epitaxially on the treated surface, even without removing the top surface layer, which contained some residual damage after annealing. This method can be integrated into HTS circuit fabrication as a key step of planarization. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Jh Ion radiation effects

Transport and structural properties of the top and bottom grain boundaries in YBa2Cu3O7−δ step-edge Josephson junctions

Filomena Lombardi, Z. G. Ivanov, G. M. Fischer, E. Olsson, and T. Claeson

Appl. Phys. Lett. 72, 249 (1998); http://dx.doi.org/10.1063/1.120700 (3 pages) | Cited 4 times

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We present a method to study separately the electrical transport properties of the grain boundaries (GBs) formed at the top and at the bottom edges of YBa2Cu3O7−δ(YBCO) step-edge Josephson junctions. The step-edge junctions were fabricated on (100) LaAlO3 steps using tilted Ar ion milling to define the electrodes and the microbridges. Due to the shadowing effect of the step, a continuous YBCO stripe remains along and at the bottom of the step on both sides of a microbridge. We found that the top GB is responsible for the weak link behavior of our step-edge junctions. The transport properties were correlated with the different microstructural properties of the two GBs formed at the edges of the step. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
74.25.F- Transport properties
61.72.Mm Grain and twin boundaries

How to achieve in-phase locking in small-inductance Josephson junction ladder arrays

M. Basler, W. Krech, and K. Yu. Platov

Appl. Phys. Lett. 72, 252 (1998); http://dx.doi.org/10.1063/1.120701 (3 pages) | Cited 4 times

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We present the results of an analytical study of phase locking in externally loaded two-dimensional Josephson junction ladder arrays with small, but non-vanishing ring inductances. A Lyapunov stability based condition is found controlling realization of the radiating in-phase oscillation regime. © 1998 American Institute of Physics.
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85.25.Cp Josephson devices
84.30.Ng Oscillators, pulse generators, and function generators
84.40.Dc Microwave circuits
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Magnetization reversal in long chains of submicrometric Co dots

J. I. Martín, J. Nogués, Ivan K. Schuller, M. J. Van Bael, K. Temst, C. Van Haesendonck, V. V. Moshchalkov, and Y. Bruynseraede

Appl. Phys. Lett. 72, 255 (1998); http://dx.doi.org/10.1063/1.120702 (3 pages) | Cited 26 times

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Long chains of 400 nm diam Co dots prepared by combined electron-beam lithography exhibit interesting magnetotransport properties. The magnetoresistance of the chains of dots is markedly different from single Co films, indicating a strongly modified magnetization reversal process. Magnetic force microscopy (MFM) shows that, after magnetic saturation, in the remanent state the single-domain dots are all oriented with their magnetic moment along the chain. A comparison of the magnetoresistance and the MFM reveals that the magnetization reversal occurs by coherent rotation of the magnetic moment in the single-domain dots forming the chain. © 1998 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure
07.79.Pk Magnetic force microscopes
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Poly(tetraflouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer

Jay J. Senkevich and Seshu B. Desu

Appl. Phys. Lett. 72, 258 (1998); http://dx.doi.org/10.1063/1.120703 (3 pages) | Cited 19 times

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A low dielectric constant polymer, poly(tetrafluoro-p-xylylene) (VT-4) was synthesized by a chemical vapor polymerization process using 4,5,7,8,12,13,15,16-octafluoro-[2.2]-paracyclophane as a precursor. The VT-4 polymer has a dielectric constant of 2.42 and a dielectric loss of 0.008 at 1 MHz, perpendicular to the plane of the film. Thermal stability of VT-4 satisfied the SEMATECH criteria, exhibiting an onset of degradation at 460 °C, and 1% weight loss at 480 °C in an argon environment. The x-ray diffraction data suggest a disordered semicrystalline polymer as-deposited (at ∼12 °C). The crystalline phase became more ordered due to a decrease in the d spacing from 4.850 to 4.594 Å and an increase in the percent crystallinity from 39% as-deposited to 66% after successive postdeposition anneals to 300 °C. Optical measurements showed a highly anisotropic thin film with ne @630 nm=1.601 and n0 @630 nm=1.471, progressively becoming more negatively birefringent after postdeposition anneals, reaching a plateau at ∼250 °C, due to the polymer chain becoming more conformationally ordered. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
77.22.Ch Permittivity (dielectric function)
82.35.-x Polymers: properties; reactions; polymerization
77.22.Gm Dielectric loss and relaxation
68.60.Dv Thermal stability; thermal effects
78.20.Fm Birefringence
77.84.Jd Polymers; organic compounds

High-frequency properties of SrTiO3 thin-film capacitors fabricated on polymer-coated alloy substrates

Nobuyuki Sugii, Hiroji Yamada, Osamu Kagaya, Matsuo Yamasaki, Kenji Sekine, Kiichi Yamashita, Mitsuhiro Watanabe, and Shirou Murakami

Appl. Phys. Lett. 72, 261 (1998); http://dx.doi.org/10.1063/1.120704 (3 pages) | Cited 9 times

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Low-temperature (200 °C) sputter deposition of SrTiO3 (STO) thin films by using ultrahigh-density ceramic target enabled us to fabricate capacitors on polyimide-isoindroquinazoline dione (PIQ)- or benzocyclobutene (BCB)-coated alloy substrates. Complex impedances of the capacitors were analyzed. Capacitances of the 0.01 mm2 area capacitors with 200-nm-thick STO films were around 22 pF and were not dependent on frequency up to 8 GHz. Leakage-current densities of the films were lower than 10−6 A/cm2 at an applied voltage of 10 V and dielectric loss tangents were lower than 10−6. © 1998 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Electrofreezing effect and nucleation of ice crystals in free growth experiments

I. Braslavsky and S. G. Lipson

Appl. Phys. Lett. 72, 264 (1998); http://dx.doi.org/10.1063/1.120705 (3 pages) | Cited 11 times

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Electrofreezing is an effect where an electrostatically charged surface in contact with a supercooled liquid or an externally applied electric field significantly enhances nucleation of the solid phase. The electrofreezing effect has been used as a tool to nucleate ice and heavy ice crystals in free-growth experiments at supercooling greater than 1.5 °C. In order to nucleate ice crystals at smaller supercooling, we describe a device which uses a combination of a thermoelectric cooler and the electrofreezing effect. This system has been used to nucleate crystals at a supercooling down to 0.1 °C, but this figure is only limited by the temperature stability of the growth medium. © 1998 American Institute of Physics.
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64.70.D- Solid-liquid transitions
64.60.Q- Nucleation
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