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12 Jan 1998

Volume 72, Issue 2, pp. 135-266

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Growth of b-axis rare earths on sapphire by molecular beam epitaxy

K. A. Ritley and C. P. Flynn

Appl. Phys. Lett. 72, 170 (1998); http://dx.doi.org/10.1063/1.120675 (3 pages) | Cited 2 times

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A process is described whereby hcp rare-earth metals can be grown heteroepitaxially as high-quality single-crystal films with the b axis normal to the growth plane. The growth employs molecular beam epitaxy, starting from available sapphire substrates. The results of characterization by several techniques are described. © 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Elastic behavior of nanoparticle chain aggregates

Sheldon K. Friedlander, Hee Dong Jang, and Kevin H. Ryu

Appl. Phys. Lett. 72, 173 (1998); http://dx.doi.org/10.1063/1.120676 (3 pages) | Cited 27 times

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Nanoparticle chain aggregates (NCA) possess elastomeric properties including stretch under tension, and contraction when the tension is relaxed. Individual chain aggregates of 7 nm titania particles a few hundred nm long were observed in the electron microscope. The NCA were stretched across expanding holes in the carbon film on an electron micrograph grid. After stretching up to 90%, the NCA broke loose at one end and contracted to a tightly folded chain. This pattern was observed in repeated tests. Mechanisms for this behavior and reasons for its generality are proposed. Implications are discussed for the ductility of nanoparticle ceramics, and the increased tensile strength and elastic modulus of rubber due to nanoparticle additives. © 1998 American Institute of Physics.
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62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Manipulation of passivated gold clusters on graphite with the scanning tunneling microscope

P. J. Durston, R. E. Palmer, and J. P. Wilcoxon

Appl. Phys. Lett. 72, 176 (1998); http://dx.doi.org/10.1063/1.120677 (3 pages) | Cited 20 times

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Chemically passivated gold nanoclusters deposited on the surface of graphite have been manipulated with the scanning tunneling microscope (STM) in ultrahigh vacuum. The controlled clearing of a definite shape in a cluster layer is demonstrated. Clusters embedded in a close-packed array could not be removed from the surface, apparently because of the attractive interaction between neighboring ligand chains. A minority channel of cluster fragmentation has been identified and leads to the creation of platelets which can be further manipulated by the STM tip. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Rv Passivation

Strain-induced island scaling during Si1−xGex heteroepitaxy

W. Dorsch, H. P. Strunk, H. Wawra, G. Wagner, J. Groenen, and R. Carles

Appl. Phys. Lett. 72, 179 (1998); http://dx.doi.org/10.1063/1.120622 (3 pages) | Cited 51 times

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We investigated the composition-dependent size of pseudomorphic Si1−xGex islands on Si(001). Si1−xGex layers with 0.05 ⩽ x ⩽ 0.54 were deposited from metallic solution. The island growth occurs near thermodynamic equilibrium and facilitates a comparison of the results with predictions based on energetics. We find pseudomorphic islands with base widths ranging from several μm to a few nm. We show that it is possible to adjust the island size by simply choosing the appropriate layer composition. Varying deposition temperatures and growth velocities do not affect the scaling behavior. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Hd Other semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Internal distortion in ZrO2–CeO2 solid solutions: Neutron and high-resolution synchrotron x-ray diffraction study

Masatomo Yashima, Satoshi Sasaki, Yasuo Yamaguchi, Masato Kakihana, Masahiro Yoshimura, and Takeharu Mori

Appl. Phys. Lett. 72, 182 (1998); http://dx.doi.org/10.1063/1.120678 (3 pages) | Cited 42 times

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Neutron and high-resolution synchrotron x-ray diffraction measurements have indicated a tetragonal zirconia phase with both an axial ratio of unity and internal shear deformation: The oxygen displacements from ideal fluorite positions of 0.088 and 0.078 Å are observed for 65 and 70 mol % CeO2–ZrO2 samples, respectively, although both c/a values are 1.000±0.001. The c/a ratio decreases with increasing of CeO2 content and decreases discontinuously to unity around a 60 mol % CeO2 composition, while the oxygen displacement decreases continuously up to about 90 mol % CeO2. © 1998 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Superior two-dimensional electron gas on (511)A GaAs

Hadas Shtrikman, A. Soibel, and U. Meirav

Appl. Phys. Lett. 72, 185 (1998); http://dx.doi.org/10.1063/1.120679 (3 pages) | Cited 1 time

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We present a comparative study of two-dimensional electron gas structures, which were grown on (511)A GaAs substrates and on conventional (100) GaAs substrates. The study included both normal interface and inverted interface structures. The (511)A presents consistently and substantially improved transport properties, whose origin can be traced to the growth dynamics of these surfaces. We conclude that (511)A GaAs promises to serve as an alternative and superior platform for realizing various n-type GaAs structures. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.80.Ey III-V and II-VI semiconductors

Stress-induced fragmentation of multiwall carbon nanotubes in a polymer matrix

H. D. Wagner, O. Lourie, Y. Feldman, and R. Tenne

Appl. Phys. Lett. 72, 188 (1998); http://dx.doi.org/10.1063/1.120680 (3 pages) | Cited 316 times

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We report the observation of single nanotube fragmentation, under tensile stresses, using nanotube-containing thin polymeric films. Similar fragmentation tests with single fibers instead of nanotubes are routinely performed to study the fiber-matrix stress transfer ability in fiber composite materials, and thus the efficiency and quality of composite interfaces. The multiwall nanotube-matrix stress transfer efficiency is estimated to be at least one order of magnitude larger than in conventional fiber-based composites. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
83.80.Ab Solids: e.g., composites, glasses, semicrystalline polymers

Six-fold coordinated silicon at grain boundaries in sintered α-Al2O3

Kenji Kaneko, Isao Tanaka, and Masato Yoshiya

Appl. Phys. Lett. 72, 191 (1998); http://dx.doi.org/10.1063/1.120681 (3 pages) | Cited 4 times

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High-resolution transmission electron microscopy (HRTEM) and analytical electron microscopy (AEM) have been carried out on Si-doped sintered α-Al2O3. HRTEM shows that there is no amorphous phase at grain boundaries. The Si-segregated boundary is found to be much more sensitive to irradiation damage than undoped Al2O3 grain boundaries. AEM with energy dispersive x-ray spectroscopy (EDS) shows the significant segregation of Si at grain boundaries, and AEM with electron energy-loss spectroscopy (EELS) reveals the existence of six-fold coordinated Si at the grain boundaries. The theoretical calculations obtained by the molecular orbital method support the data obtained by EELS. © 1998 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
79.20.Kz Other electron-impact emission phenomena
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