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12 Jan 1998

Volume 72, Issue 2, pp. 135-266

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Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications

H. Gebretsadik, K. Kamath, W.-D. Zhou, P. Bhattacharya, C. Caneau, and R. Bhat

Appl. Phys. Lett. 72, 135 (1998); http://dx.doi.org/10.1063/1.121443 (3 pages) | Cited 18 times

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We have studied the wet thermal oxidation of In0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers (VCSELs). Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of In0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Ea III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays

A. Bhattacharya and D. Botez

Appl. Phys. Lett. 72, 138 (1998); http://dx.doi.org/10.1063/1.120667 (3 pages) | Cited 8 times

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We present high peak-pulsed coherent power results from large-aperture, 1.55 μm antiguided laser arrays. The InP-based devices have a compressively strained InGaAsP double-quantum-well active region and are fabricated by two-step self-aligned metalorganic chemical vapor deposition. We have obtained 2.5 W front-facet peak power in a 2.6° wide beam [6×diffraction limit (D.L.)], with 1.2 W in the central lobe, from 40-element, 250 μm aperture devices. The width of the central lobe remains constant from 4 to 15×threshold. Devices with improved temperature characteristics and of geometry closer to the resonance condition provide 1 W peak power in a beam 1.2° wide (2.7×D.L.), with 61% of the energy in the central lobe; and 1.75 W peak power in a 1.5° wide beam (3.5×D.L.) at heatsink temperatures between 15 and 45 °C. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Whispering-gallery-mode microring laser using a conjugated polymer

Y. Kawabe, Ch. Spiegelberg, A. Schülzgen, M. F. Nabor, B. Kippelen, E. A. Mash, P. M. Allemand, M. Kuwata-Gonokami, K. Takeda, and N. Peyghambarian

Appl. Phys. Lett. 72, 141 (1998); http://dx.doi.org/10.1063/1.120668 (3 pages) | Cited 39 times

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We observed laser emission in whispering gallery modes using a microring composed of a semiconducting polymer poly[2,5-bis-(2′-ethylhexyloxy)-p-phenylenevinylene coated on an etched fiber under transient and quasisteady-state pumping conditions. The threshold for laser oscillation was 1 mJ/cm2 (0.1 MW/cm2) and 30 μJ/cm2 (300 MW/cm2) for nanosecond and femtosecond excitation, respectively. The laser output showed superlinear dependence on the excitation energy above the threshold. The demonstration of lasing under quasisteady-state pumping shows the possibility to develop electrically pumped polymer lasers. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Wd Fiber lasers

Optically pumped blue organic semiconductor lasers

V. G. Kozlov, G. Parthasarathy, P. E. Burrows, S. R. Forrest, Y. You, and M. E. Thompson

Appl. Phys. Lett. 72, 144 (1998); http://dx.doi.org/10.1063/1.120669 (3 pages) | Cited 43 times

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Lasing at 460, 485, and 510 nm is demonstrated in optically pumped, vacuum-deposited amorphous thin films of a carbazole derivative doped with Coumarin 47, perylene, and Coumarin 30, respectively. Efficient, nonradiative Förster energy transfer between host and dopant organic molecules results in low lasing thresholds (5 μJ/cm2), high differential quantum efficiencies (15%), high peak output powers (20 W), and long operational lifetimes (>105 pulses at 100 times the threshold power). © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Noncollinearly phase-matched femtosecond optical parametric amplification with a 2000 cm−1 bandwidth

Akira Shirakawa and Takayoshi Kobayashi

Appl. Phys. Lett. 72, 147 (1998); http://dx.doi.org/10.1063/1.120670 (3 pages) | Cited 59 times

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An optical parametric amplifier generating as short as 14 fs pulses in a visible region has been constructed in a noncollinear phase-matching configuration. The group-velocity matching between the signal and idler enormously broadens the gain bandwidth up to 2000 cm−1, which is mainly limited by the chirp of the seed pulses. Pulses shorter than 20 fs are tunable from 550 to 690 nm by scanning the delay-line of the pump beam. © 1998 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking

Failure of phase-matching concept in large-signal parametric frequency conversion

S. Trillo, G. Millot, E. Seve, and S. Wabnitz

Appl. Phys. Lett. 72, 150 (1998); http://dx.doi.org/10.1063/1.120671 (3 pages) | Cited 3 times

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Four-wave mixing experiments in a low-birefringence optical fiber reveal an unexpected sudden increase of the conversion efficiency as the signal power crosses a threshold value. In this regime, peak frequency conversion is achieved outside the small-signal parametric gain spectrum. A nonlinear model of wave mixing fits the measured data well. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.81.Gs Birefringence, polarization

Electro-optic modulation using an organic single crystal film in a Fabry–Perot cavity

Jianjun Xu, Ligui Zhou, and M. Thakur

Appl. Phys. Lett. 72, 153 (1998); http://dx.doi.org/10.1063/1.120672 (2 pages) | Cited 12 times

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Electro-optic modulation has been demonstrated using single crystal film of an organic electro-optic material, [N-(4-nitrophenyl)-L-prolinol] (NPP), placed in a Fabry–Perot cavity. The transverse geometry was used for electro-optic modulation. The cavity used had a finesse of about 50. The modulation depth achieved was about 0.7% for a low ac field of 0.5 V/μm applied along the charge-transfer (polar) axis on the film. The results are promising for applications of such films in high speed optical signal processing. © 1998 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
07.60.Ly Interferometers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Spectral characteristics of an InP/InGaAs distributed absorbing Bragg reflector

Kensuke Ogawa, Yasuhiro Matsui, Taro Itatani, and Kiyoshi Ouchi

Appl. Phys. Lett. 72, 155 (1998); http://dx.doi.org/10.1063/1.120673 (3 pages) | Cited 3 times

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An InP/In0.53Ga0.47As distributed absorbing Bragg reflector is investigated by reflectance and group-delay-time spectroscopy. The measured reflectance is suppressed and shows a minimum at the low-wavelength side of the high-reflectance band. This suppression of reflectance is due to an enhancement of optical absorption. The enhancement of optical absorption originates from an increase in the overlap of the optical field with the absorbing InGaAs layers since an intense optical field is confined near the surface in the spectral range of the enhancement. © 1998 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
42.79.Fm Reflectors, beam splitters, and deflectors
78.20.-e Optical properties of bulk materials and thin films

Green phosphor for low-voltage cathodoluminescent applications: SrGa2S4:Eu2+

S. Yang, C. Stoffers, F. Zhang, S. M. Jacobsen, B. K. Wagner, C. J. Summers, and Neil Yocom

Appl. Phys. Lett. 72, 158 (1998); http://dx.doi.org/10.1063/1.120674 (3 pages) | Cited 49 times

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The optical and physical properties of a low-voltage phosphor, SrGa2S4:Eu2+, are reviewed. This phosphor has excellent chromaticity and high luminous efficiency at excitation voltages <3 kV and at high drive current ( ∼ 100 μA/cm2). At high current densities this phosphor was found to have superior saturation properties compared to current phosphors. This is attributed to the fast decay time of this phosphor, which is expected to enhance its resistance to saturation. Recent studies show that this phosphor has good maintenance properties. © 1998 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence

Photoinduced surface deposition of Ag on Ag-rich Ag–Ge–S films: Optimal Ag content and film thickness for applications in optical recording devices

Takeshi Kawaguchi

Appl. Phys. Lett. 72, 161 (1998); http://dx.doi.org/10.1063/1.120706 (3 pages) | Cited 3 times

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The photosensitivity of the photosurface deposition (PSD) effect and the durability in air of Agx(Ge0.3S0.7)100−x films (40 ⩽ x ⩽ 83) with thicknesses of 50–700 nm have been studied. Films of 60–65 at. % Ag and 200–300 nm thick were found to be optimal for applications in optical recording devices. Crystallized samples have been examined to obtain structural information on the Ag-rich films. It is suggested that excess Ag+ ions, which contribute to the PSD, exist in a disordered Ag8GeS6 phase of the Ag-rich films. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
42.79.Vb Optical storage systems, optical disks
42.79.Wc Optical coatings
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