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12 Jan 1998

Volume 72, Issue 2, pp. 135-266

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Poly(tetraflouro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer

Jay J. Senkevich and Seshu B. Desu

Appl. Phys. Lett. 72, 258 (1998); http://dx.doi.org/10.1063/1.120703 (3 pages) | Cited 19 times

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A low dielectric constant polymer, poly(tetrafluoro-p-xylylene) (VT-4) was synthesized by a chemical vapor polymerization process using 4,5,7,8,12,13,15,16-octafluoro-[2.2]-paracyclophane as a precursor. The VT-4 polymer has a dielectric constant of 2.42 and a dielectric loss of 0.008 at 1 MHz, perpendicular to the plane of the film. Thermal stability of VT-4 satisfied the SEMATECH criteria, exhibiting an onset of degradation at 460 °C, and 1% weight loss at 480 °C in an argon environment. The x-ray diffraction data suggest a disordered semicrystalline polymer as-deposited (at ∼12 °C). The crystalline phase became more ordered due to a decrease in the d spacing from 4.850 to 4.594 Å and an increase in the percent crystallinity from 39% as-deposited to 66% after successive postdeposition anneals to 300 °C. Optical measurements showed a highly anisotropic thin film with ne @630 nm=1.601 and n0 @630 nm=1.471, progressively becoming more negatively birefringent after postdeposition anneals, reaching a plateau at ∼250 °C, due to the polymer chain becoming more conformationally ordered. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
77.22.Ch Permittivity (dielectric function)
82.35.-x Polymers: properties; reactions; polymerization
77.22.Gm Dielectric loss and relaxation
68.60.Dv Thermal stability; thermal effects
78.20.Fm Birefringence
77.84.Jd Polymers; organic compounds

High-frequency properties of SrTiO3 thin-film capacitors fabricated on polymer-coated alloy substrates

Nobuyuki Sugii, Hiroji Yamada, Osamu Kagaya, Matsuo Yamasaki, Kenji Sekine, Kiichi Yamashita, Mitsuhiro Watanabe, and Shirou Murakami

Appl. Phys. Lett. 72, 261 (1998); http://dx.doi.org/10.1063/1.120704 (3 pages) | Cited 9 times

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Low-temperature (200 °C) sputter deposition of SrTiO3 (STO) thin films by using ultrahigh-density ceramic target enabled us to fabricate capacitors on polyimide-isoindroquinazoline dione (PIQ)- or benzocyclobutene (BCB)-coated alloy substrates. Complex impedances of the capacitors were analyzed. Capacitances of the 0.01 mm2 area capacitors with 200-nm-thick STO films were around 22 pF and were not dependent on frequency up to 8 GHz. Leakage-current densities of the films were lower than 10−6 A/cm2 at an applied voltage of 10 V and dielectric loss tangents were lower than 10−6. © 1998 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Electrofreezing effect and nucleation of ice crystals in free growth experiments

I. Braslavsky and S. G. Lipson

Appl. Phys. Lett. 72, 264 (1998); http://dx.doi.org/10.1063/1.120705 (3 pages) | Cited 11 times

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Electrofreezing is an effect where an electrostatically charged surface in contact with a supercooled liquid or an externally applied electric field significantly enhances nucleation of the solid phase. The electrofreezing effect has been used as a tool to nucleate ice and heavy ice crystals in free-growth experiments at supercooling greater than 1.5 °C. In order to nucleate ice crystals at smaller supercooling, we describe a device which uses a combination of a thermoelectric cooler and the electrofreezing effect. This system has been used to nucleate crystals at a supercooling down to 0.1 °C, but this figure is only limited by the temperature stability of the growth medium. © 1998 American Institute of Physics.
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64.70.D- Solid-liquid transitions
64.60.Q- Nucleation
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