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12 Jan 1998

Volume 72, Issue 2, pp. 135-266

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Defect annealing in a II–VI laser diode structure under intense optical excitation

C. Jordan, D. T. Fewer, J. F. Donegan, E. M. McCabe, A. Huynh, F. P. Logue, S. Taniguchi, T. Hino, K. Nakano, and A. Ishibashi

Appl. Phys. Lett. 72, 194 (1998); http://dx.doi.org/10.1063/1.120682 (3 pages) | Cited 4 times

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Defect annealing under intense pulsed optical excitation has been observed in a II–VI laser diode structure at room temperature. More than one order of magnitude increase in photoluminescence intensity has been obtained when the annealed area is probed at low excitation intensity. High-resolution confocal photoluminescence images of the annealed region do not show any sign of degradation. Together, these results suggest that an initial density of intrinsic point defects present within the active region can be removed by the optical annealing. Recombination-enhanced defect reactions in the vicinity of the point defects are responsible for this nonthermal annealing effect. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Homoepitaxy of 6H and 4H SiC on nonplanar substrates

N. Nordell, S. Karlsson, and A. O. Konstantinov

Appl. Phys. Lett. 72, 197 (1998); http://dx.doi.org/10.1063/1.120683 (3 pages) | Cited 4 times

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Growth by vapor phase epitaxy around stripe mesas and in trenches formed by reactive ion etch on 6H and 4H SiC substrates has been investigated. The mesas were aligned with the low index 〈1120〉 and 〈1100〉 directions, as well as with the high index 〈1,1+√,math,0〉 directions, in order to reveal and study the growth habit. It was found that a low C:Si ratio gave a smooth growth and small differences in growth rate between lattice planes. A larger C:Si ratio gave more faceted growth, both limited by surface kinetics and surface diffusion, and the growth rate was 10% lower in the [1100] direction and 10% higher in the [1120] direction, than on the substrate. Growth on mesas oriented parallel to the substrate off-orientation shows clear step-flow growth, while growth on mesas oriented perpendicular to the off-orientation reveals the singular (0001) plane, where islands are observed, which might indicate Stranski–Krastanov growth. © 1998 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Carbon-induced undersaturation of silicon self-interstitials

R. Scholz, U. Gösele, J.-Y. Huh, and T. Y. Tan

Appl. Phys. Lett. 72, 200 (1998); http://dx.doi.org/10.1063/1.120684 (3 pages) | Cited 39 times

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Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles. © 1998 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
64.75.-g Phase equilibria

Low-noise YBa2Cu3O7−x single layer dc superconducting quantum interference device (SQUID) magnetometer based on bicrystal junctions with 30° misorientation angle

J. Beyer, D. Drung, F. Ludwig, T. Minotani, and K. Enpuku

Appl. Phys. Lett. 72, 203 (1998); http://dx.doi.org/10.1063/1.120685 (3 pages) | Cited 35 times

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We have fabricated and characterized a low-noise direct-coupled magnetometer based on a 100 pH YBa2Cu3O7−x dc superconducting quantum interference device (SQUID) on a 10 mm×10 mm SrTiO3 bicrystal substrate with 30° misorientation angle. The thin films were deposited by hollow cathode discharge sputtering and patterned using conventional photolithography and Ar ion beam etching. The SQUID magnetometer was operated using direct-coupled flux-locked-loop electronics with bias reversal. The sensor had a usable voltage swing of 39 μV and a white magnetic field noise of 32 fTHz−1/2 with a 1/f corner at 2 Hz, including electronics and environmental noise. The voltage versus flux (V−Φ) characteristic showed a pronounced distortion on the negative slope. Numerical simulations were performed to explain the distorted V−Φ characteristic. Measurements of magnetocardiograms demonstrate the suitability of this sensor for biomagnetic applications. © 1998 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.72.-h Cuprate superconductors
87.50.C- Static and low-frequency electric and magnetic fields effects
74.78.-w Superconducting films and low-dimensional structures
07.50.Hp Electrical noise and shielding equipment
81.15.Cd Deposition by sputtering
81.65.Cf Surface cleaning, etching, patterning
87.63.Hg Thermography

Channels of Cd diffusion and stoichiometry in CdTe grown by molecular beam epitaxy

A. Barcz, G. Karczewski, T. Wojtowicz, M. Sadlo, and J. Kossut

Appl. Phys. Lett. 72, 206 (1998); http://dx.doi.org/10.1063/1.120686 (3 pages) | Cited 5 times

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By studying the diffusion of specially incorporated thin Mn markers in molecular beam epitaxy-grown CdTe, we can investigate quantitatively deviations from stoichiometry as well as the details of Cd diffusion in the crystal. In CdTe layers deficient in Cd, the diffusion proceeds through VCd vacancies, with the activation energy of 2.1 eV, characteristic for bulk CdTe. In CdTe grown in excess Cd flux, the evaluated activation energy of 1.4 eV for Cd self-diffusion is characteristic to Te self-diffusion in bulk CdTe, which implies that the flow of Cd atoms is mediated by VTe vacancies with formation of a virtual CdTe antisite defect. A striking correlation of the occurrence of the minimum of electrical resistivity in In-doped CdTe with nearly perfect stoichiometry with the minimum of the diffusivity of Mn provides further support of this interpretation. © 1998 American Institute of Physics.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
66.30.J- Diffusion of impurities
61.66.Bi Elemental solids
61.66.Dk Alloys
61.72.J- Point defects and defect clusters
73.61.Ga II-VI semiconductors
68.60.Wm Other nonelectronic physical properties

Hydrogenated amorphous silicon transverse junction solar cell

M. A. Kroon, R. A. C. M. M. van Swaaij, M. Zeman, V. I. Kuznetsov, and J. W. Metselaar

Appl. Phys. Lett. 72, 209 (1998); http://dx.doi.org/10.1063/1.120687 (2 pages) | Cited 4 times

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In this letter, we introduce a new thin film solar cell design on amorphous silicon, called the transverse junction solar cell. In this concept, the p-i-n junction is formed perpendicular to the surface. With conventional deposition and silicon device processing techniques test cells have been made with a conversion efficiency up to 5.2%±1.4% under standard AM1.5 illumination. © 1998 American Institute of Physics.
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73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
84.60.Jt Photoelectric conversion

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, and Kazuyuki Chocho

Appl. Phys. Lett. 72, 211 (1998); http://dx.doi.org/10.1063/1.120688 (3 pages) | Cited 313 times

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InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 μm etching of the ELOG substrate, the etch pit density was about 2×108 cm2 in the region of the 4-μm-wide stripe window, but almost zero in the region of the 7-μm-wide SiO2 stripe. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots

D. L. Huffaker, L. A. Graham, and D. G. Deppe

Appl. Phys. Lett. 72, 214 (1998); http://dx.doi.org/10.1063/1.120689 (3 pages) | Cited 14 times

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Data are presented on the electroluminescence from an ensemble of self-organized quantum dots excited at low current densities. The ensemble contains ∼ 105 dots, which produce a ground state spectral emission with a 14 K linewidth of ∼1 meV at low current density ( ∼ 5×10−2 A/cm2). While the spectra show clearly discrete energy levels, we suggest that obtaining a single ground state emission from the ensemble may be due to interdot electronic coupling. Spectral broadening decreases for decreasing current density due to electronic state filling, even for the lowest current densities studied. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Critical thickness of Zn1−xCdxSe/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates

E. Tournié, C. Ongaretto, M. Laügt, and J.-P. Faurie

Appl. Phys. Lett. 72, 217 (1998); http://dx.doi.org/10.1063/1.120690 (3 pages) | Cited 1 time

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We study through high-resolution x-ray diffraction (HRXRD) and photoluminescence spectroscopy a series of Zn1−xCdxSe/ZnSe multi-quantum-well heterostructures grown by molecular-beam epitaxy on relaxed ZnSe buffer layers, themselves grown on bare GaAs substrates. We show that HRXRD experiments combined with simulations allow one to accurately assess the strain state of the heterostructures which appear to follow closely the Matthews and Blakeslee model [J. Cryst. Growth 27, 118 (1974)]. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates

A. Konkar, A. Madhukar, and P. Chen

Appl. Phys. Lett. 72, 220 (1998); http://dx.doi.org/10.1063/1.120691 (3 pages) | Cited 66 times

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The lattice-mismatch stress-induced two-dimensional-to-three-dimensional morphology change is combined with interfacet adatom migration to selectively assemble parallel chains of InAs islands on top of [110] oriented stripe mesas of sub-100-nm widths on GaAs(001) substrates. On such mesa stripes, prepared in situ via size-reducing epitaxy, deposition of InAs amounts subcritical for island formation on planar GaAs (001) is shown to allow self-assembly of three, two, and single chains of InAs three-dimensional island quantum dots selectively on the stripe mesa tops for widths decreasing from 100 nm down to 30 nm. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

G. Kissinger, G. Morgenstern, J. Vanhellemont, D. Gräf, U. Lambert, and H. Richter

Appl. Phys. Lett. 72, 223 (1998); http://dx.doi.org/10.1063/1.120692 (3 pages) | Cited 2 times

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Fast pulled Czochralski silicon crystals usually contain large octahedral vacancy agglomerates. These voids are known as D defects, which degrade the integrity of thin gate oxides by causing time zero dielectric breakdown. After annealing the wafers at temperatures above 1100 °C, the gate oxide integrity is clearly improved. We show by theoretical estimation, light-scattering tomography and transmission electron microscopy studies that the vacancy agglomerates can be filled with silicon oxide by internal oxidation. This is brought about by diffusion of interstitial oxygen to the voids, which can be regarded as internal surfaces. In this way they become less detrimental for thin gate oxides, because now they consist of silicon oxide itself. However, they are still present in an octahedral-like geometry and can be observed by Brewster angle infrared light-scattering tomography. © 1998 American Institute of Physics.  
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
81.10.Fq Growth from melts; zone melting and refining
66.30.J- Diffusion of impurities

Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing

S. Ruvimov, Ch. Dicker, J. Washburn, and Z. Liliental-Weber

Appl. Phys. Lett. 72, 226 (1998); http://dx.doi.org/10.1063/1.120693 (3 pages) | Cited 5 times

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High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950 °C were found to be twinned with a {1104} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {111}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.Mm Grain and twin boundaries
61.72.Qq Microscopic defects (voids, inclusions, etc.)
64.70.K- Solid-solid transitions
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells

J. T. Olesberg, S. A. Anson, S. W. McCahon, Michael E. Flatté, Thomas F. Boggess, D. H. Chow, and T. C. Hasenberg

Appl. Phys. Lett. 72, 229 (1998); http://dx.doi.org/10.1063/1.120694 (3 pages) | Cited 12 times

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A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap (GaInSb/InAs)/AlGaSb superlattice multiple quantum well structure. Similar structures have been implemented recently as the active region in midinfrared diode lasers. The measured spectra are compared with calculated spectra computed using a semiempirical eight-band superlattice K⋅p model. The model provides good agreement with the experimentally observed spectral and density dependence of the absorption. These results provide confirmation that the model may be used for band structure engineering of optimized midinfrared laser active regions. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes

D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson, and G. M. Dunn

Appl. Phys. Lett. 72, 232 (1998); http://dx.doi.org/10.1063/1.120695 (3 pages) | Cited 9 times

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We use a Monte Carlo model to investigate the improvement of avalanche noise performance in thin p+-i-n+ GaAs diodes. The model predicts a decrease in avalanche noise as the multiplication length decreases from 1.0 to 0.05 μm, in good agreement with recent experimental measurements. Our simulations suggest that electron initiated multiplication in short devices has inherently reduced noise despite higher feedback from hole ionization, as compared to long devices. This low noise behavior results from the narrower ionization probability distribution and larger dead space effect as a higher operating electric field needed in short devices. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
02.70.Rr General statistical methods
02.50.Ng Distribution theory and Monte Carlo studies

Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering

K. Yamaya, Y. Yamaki, H. Nakanishi, and S. Chichibu

Appl. Phys. Lett. 72, 235 (1998); http://dx.doi.org/10.1063/1.120707 (3 pages) | Cited 30 times

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Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300 °C showed a resistivity of 5×10−4 Ω cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
73.61.Ga II-VI semiconductors
78.40.Fy Semiconductors
78.66.Hf II-VI semiconductors

Coupled maximum entropy: Monte Carlo Estimation of microwave, millimeter-wave and submillimeter-wave spectrum of velocity fluctuations in GaAs

Jose Miguel Miranda Pantoja, Jose Luis Sebastián Franco, and Sagrario Muñoz San Martin

Appl. Phys. Lett. 72, 238 (1998); http://dx.doi.org/10.1063/1.120696 (3 pages) | Cited 1 time

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The maximum entropy method is presented in this letter as a highly interesting procedure for the investigation of high frequency noise properties of bulk semiconductors and electron devices at microscopic level. A Monte Carlo simulation of the hot electron velocity fluctuations in bulk GaAs has been performed to illustrate the efficiency and usefulness of this procedure. Comparisons with the most popular techniques presently used in Monte Carlo simulations of noise have also been performed. © 1998 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.70.+m Noise processes and phenomena
73.50.Fq High-field and nonlinear effects
73.50.Td Noise processes and phenomena
73.61.Ey III-V semiconductors
78.70.Gq Microwave and radio-frequency interactions

Characterization of nonradiative traps by hot electron–hole plasma luminescence dynamics in polar semiconductors

S. Juršėnas, G. Tamulaitis, G. Kurilčik, and A. Žukauskas

Appl. Phys. Lett. 72, 241 (1998); http://dx.doi.org/10.1063/1.120697 (3 pages) | Cited 4 times

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Luminescence intensity dependence on excitation intensity has been studied at quasi-steady-state conditions in CdS and CdSe crystals at T = 294 K and interpreted, with heating of photoelectrons taken into account. The shape of the dependence indicates a reduction of carrier density due to increased effective temperature. A method for estimating the height of the barrier for centers governing the thermally activated nonradiative capture by multiphonon emission is proposed. The barrier heights of 140 and 170 meV in CdS and CdSe, respectively, have been estimated. © 1998 American Institute of Physics.
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78.55.Et II-VI semiconductors
63.20.K- Phonon interactions

Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy

John T. Torvik, Jacques I. Pankove, Eleftherios Iliopoulos, Hock M. Ng, and Theodore D. Moustakas

Appl. Phys. Lett. 72, 244 (1998); http://dx.doi.org/10.1063/1.120698 (2 pages) | Cited 9 times

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We investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence was observed at 3.40 eV from the GaN on both SiO2/SiC and on SiC. No defect-related yellow luminescence was observed. The refractive index of GaN at 1.96 eV (632.8 nm) was measured at 2.22 and 2.24 for GaN/SiO2/SiC and GaN/SiC, respectively. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Cr III-V semiconductors
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