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19 Jan 1998

Volume 72, Issue 3, pp. 269-391

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Modal and threshold analysis of dielectric-apertured vertical cavity surface emitting lasers

K. Y. Chang, J. Woodhead, and P. N. Robson

Appl. Phys. Lett. 72, 335 (1998); http://dx.doi.org/10.1063/1.120728 (3 pages) | Cited 8 times

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The resonant wavelengths and mode radii of the dominant and certain higher order TEMmp modes supported by an oxide apertured vertical cavity surface emitting lasers are determined using a scalar variational formula. The reflectivity of the Bragg mirrors and the photon lifetime are calculated for each mode and both are found to decrease with decreasing oxide aperture diameter and increasing mode number. The aperture diameter, thickness, and axial position in the cavity, together with the refractive index contrast ratio used in the Bragg mirrors, are shown to be important in controlling the suppression of higher order modes. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

W. C. H. Choy, P. J. Hughes, B. L. Weiss, E. H. Li, K. Hong, and D. Pavlidis

Appl. Phys. Lett. 72, 338 (1998); http://dx.doi.org/10.1063/1.120729 (3 pages) | Cited 3 times

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The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
78.20.-e Optical properties of bulk materials and thin films
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Factors affecting resolution in scanning electron beam induced patterning of surface adsorption layers

Frank Y. C. Hui, Gyula Eres, and David C. Joy

Appl. Phys. Lett. 72, 341 (1998); http://dx.doi.org/10.1063/1.120730 (3 pages) | Cited 8 times

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The monoatomic hydride layer on silicon was used as a prototype for resistless electron beam lithography. Arbitrary patterns with linewidths below 60 nm have been achieved. The variation of the linewidth with electron energy, electron dose, and substrate thickness was studied to determine the mechanisms that govern surface hydrogen desorption and subsequent pattern formation. Unlike in resist based lithography, no resolution enhancement was observed with decreasing substrate thickness. The experimental data in combination with Monte Carlo simulations of the backscattered and transmitted electrons suggest that surface hydrogen desorption and pattern formation are not strongly related to the backscattered electrons and the secondary electrons (energies <50 eV) associated with the backscattered electrons. © 1998 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.20.La Photon- and electron-stimulated desorption
85.40.Hp Lithography, masks and pattern transfer
79.20.Hx Electron impact: secondary emission
72.80.Cw Elemental semiconductors

The formation of GaN dots on AlxGa1−xN surfaces using Si in gas-source molecular beam epitaxy

Xu-Qiang Shen, Satoru Tanaka, Sohachi Iwai, and Yoshinobu Aoyagi

Appl. Phys. Lett. 72, 344 (1998); http://dx.doi.org/10.1063/1.120731 (3 pages) | Cited 27 times

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Nanoscale GaN dots were successfully formed on AlxGa1−xN/6H-SiC(0001) surfaces by gas-source molecular beam epitaxy. It was found that the growth mode can be changed by introducing Si before GaN growth, where the Si is believed to play an important role in the change of the AlxGa1−xN surface free energy. Without introducing Si, the GaN growth mode was two dimensional and (1×3) reconstruction was observed. The growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1−xN surface. In situ reflection high-energy electron diffraction and atomic force microscopy observations were used to monitor and characterize the growth processes and surface morphology. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.35.Md Surface thermodynamics, surface energies

Bistable electroluminescence in p-i-n light-emitting tunnel-diodes enhanced by aperiodic-superlattice injectors

S. M. Cao, M. Willander, A. A. Toropov, T. V. Shubina, B. Ya. Mel’tser, P. S. Kop’ev, T. Lundström, P. O. Holtz, J. P. Bergman, and B. Monemar

Appl. Phys. Lett. 72, 347 (1998); http://dx.doi.org/10.1063/1.120732 (3 pages) | Cited 1 time

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A p-i-n resonant tunnel diode is designed and investigated using photoluminescence (PL) spectroscopy. The device is based on an Al0.4Ga0.6As/GaAs graded-index waveguide heterostructure enhanced by aperiodic-superlattice injectors for simultaneous resonant injection of electrons and heavy holes. The bias-dependent study of photocurrent, electroluminescence (EL) and PL show strong resonance behavior in the optical intensity confirming the field-dependent resonant injection of the excited states in the emission layers. Pronounced voltage-current bistability due to injection efficiency leads to multiple-wavelength EL and lasing action. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Dw Photodiodes; phototransistors; photoresistors
42.55.Px Semiconductor lasers; laser diodes
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
78.60.Fi Electroluminescence
78.55.Cr III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.40.+w Photoconduction and photovoltaic effects
42.79.Ry Gradient-index (GRIN) devices
42.79.Gn Optical waveguides and couplers

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

M. Mesrine, N. Grandjean, and J. Massies

Appl. Phys. Lett. 72, 350 (1998); http://dx.doi.org/10.1063/1.120733 (3 pages) | Cited 42 times

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We show that optical reflectivity measurements can be used to evaluate the part of a NH3 flux which reacts with a Ga-terminated GaN surface or with a Ga-flux simultaneously impinging on the surface, as in standard molecular beam epitaxy situation. At least for temperatures not exceeding 700 °C, the ratio of the reacted part of the NH3 flux to the incident flux can be assimilated to the NH3 cracking efficiency. Being nearly zero below a threshold temperature of 450 °C, it increases with temperature but remains low ( ∼ 4%) explaining why an exceptionally high V/III flux ratio is necessary to grow GaN using NH3. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.20.Hf Product distribution
78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High carrier mobility in polycrystalline thin film diamond

Hui Jin Looi, Richard B. Jackman, and John S. Foord

Appl. Phys. Lett. 72, 353 (1998); http://dx.doi.org/10.1063/1.120734 (3 pages) | Cited 63 times

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Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 1017–1019 cm−3 have been measured; control over the carrier concentration can be achieved by annealing the “as-grown” films in air. For a given annealing temperature a stable carrier concentration arises. The Hall carrier mobility has been explored and a value of >70 cm2/Vs has been measured for a film with a carrier concentration of ∼ 5×1017 cm−3, the highest reported for polycrystalline thin film diamond and equivalent to boron doped single crystal diamond. © 1998 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.25.+i Surface conductivity and carrier phenomena

Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering

H. Z. Song, X. M. Bao, N. S. Li, and X. L. Wu

Appl. Phys. Lett. 72, 356 (1998); http://dx.doi.org/10.1063/1.120735 (3 pages) | Cited 56 times

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Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. © 1998 American Institute of Physics.
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81.15.Cd Deposition by sputtering
78.66.Nk Insulators
78.55.Hx Other solid inorganic materials

Self-organized growth of ZnTe nanoscale islands on (001)GaAs

M. Longo, N. Lovergine, A. M. Mancini, A. Passaseo, G. Leo, M. Mazzer, M. Berti, and A. V. Drigo

Appl. Phys. Lett. 72, 359 (1998); http://dx.doi.org/10.1063/1.120736 (3 pages) | Cited 6 times

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The Stransky–Krastanow metalorganic vapor phase epitaxy growth of self-organized ZnTe islands on homoepitaxial (001)GaAs is demonstrated. The −7.4% lattice mismatch of the ZnTe/GaAs heterostructure leads to a strain-driven distribution of nanoscale ZnTe islands on top of a two-dimensionally (2D) grown wetting layer. Atomic force microscopy and Rutherford backscattering spectrometry are used to determine the island dimensions and the thickness of the wetting layer. The density of the islands, their average diameter, and aspect ratio turn out to be about 520 μm−2, 13.6 nm, and 0.20, respectively, for a 1.2 ML thick 2D layer. Furthermore, the average aspect ratio of the islands decreases by increasing the thickness of the wetting layer, as expected by the progressive extinction of the strain-driven island nucleation. © 1998 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Effect of matrix on InAs self-organized quantum dots on InP substrate

V. M. Ustinov, E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul’nikov, and P. S. Kop’ev

Appl. Phys. Lett. 72, 362 (1998); http://dx.doi.org/10.1063/1.120737 (3 pages) | Cited 48 times

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InAs self-organized quantum dots in In0.53Ga0.47As and In0.52Al0.48As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3–4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

De-Sheng Jiang, M. Ramsteiner, K. H. Ploog, H. Tews, A. Graber, R. Averbeck, and H. Riechert

Appl. Phys. Lett. 72, 365 (1998); http://dx.doi.org/10.1063/1.120738 (3 pages) | Cited 9 times

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Strong defect-specific low-frequency peaks are detected in low-temperature Raman spectra of hexagonal GaN grown by molecular beam epitaxy on sapphire substrate. The intensity of these peaks is found to be enhanced by excitation in resonance with yellow luminescence transitions. The validity of the assignment to electronic Raman scattering (ERS), as proposed before for their counterparts in cubic GaN on GaAs [M. Ramsteiner, J. Menniger, O. Brandt, H. Yang, and K. H. Ploog, Appl. Phys. Lett. 69, 1276 (1996)], is confirmed. Our results imply that the observed ERS peaks are related to shallow donors which are not necessarily hydrogenic. One Raman peak at very low frequency (11.7 meV) is alternatively explained by a pseudo-localized vibrational mode. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
63.20.Pw Localized modes
78.55.Cr III-V semiconductors

Nearly noise-free transistor operated in the 2–18 GHz range

J. A. Fendrich and M. Feng

Appl. Phys. Lett. 72, 368 (1998); http://dx.doi.org/10.1063/1.120739 (3 pages) | Cited 3 times

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Temperature dependent measurements of the noise parameters of a pseudomorphic high electron mobility transistor show the minimum noise figure vanishes at low temperatures for frequencies from 2 GHz up to 18 GHz and for most currents. We propose that the exponential decrease seen in the noise figure with temperature is due to a reduction of thermally activated noise sources with an activation energy of ∼95 meV. Other noise-parameter data suggest a flattening of the noise figure paraboloid as temperature is decreased. These results demonstrate the feasibility of designing a near 0.1 dB noise figure amplifier for high-frequency operation over a wide range of currents. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena
73.61.Ey III-V semiconductors

Microscopic nature of Staebler-Wronski defect formation in amorphous silicon

R. Biswas and B. C. Pan

Appl. Phys. Lett. 72, 371 (1998); http://dx.doi.org/10.1063/1.120740 (3 pages) | Cited 29 times

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Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2∗ defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics.
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71.55.Cn Elemental semiconductors
71.55.Jv Disordered structures; amorphous and glassy solids
72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors
61.72.Yx Interaction between different crystal defects; gettering effect

Measurement of the zero-bias electron transmittance as a function of energy for half- and quarter-electron-wavelength semiconductor quantum-interference filters

D. K. Guthrie, P. N. First, T. K. Gaylord, E. N. Glytsis, and R. E. Leibenguth

Appl. Phys. Lett. 72, 374 (1998); http://dx.doi.org/10.1063/1.120741 (3 pages) | Cited 3 times

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Ballistic electron emission spectroscopy has been used to measure the electron transmittance function of both half- and quarter-electron-wavelength (using optics terminology) quantum-interference filters under zero applied voltage bias. At the design energy, these devices exhibit constructive and destructive interference, respectively. Second-derivative spectra from current versus voltage measurements clearly show both tunneling and above-barrier quasibound energy states. The spectra accurately reproduce the transmittance functions of the designed structures, attaining nearly the temperature-limited resolution at 77 K and 300 K. The presence of the above-barrier resonances has been confirmed conclusively by measurements on these complementary half- and quarter-wavelength device structures. © 1998 American Institute of Physics.
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85.35.Ds Quantum interference devices
42.79.Ci Filters, zone plates, and polarizers
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