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26 Jan 1998

Volume 72, Issue 4, pp. 395-509

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All-optical inverter operating over a temperature range of 15–1400 K in erbium-doped lutetium aluminum garnet

Yoshinobu Maeda

Appl. Phys. Lett. 72, 395 (1998); http://dx.doi.org/10.1063/1.120768 (3 pages) | Cited 11 times

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An all-optical inverter, which operates over a range of 15–1400 K, was demonstrated in an erbium-doped lutetium aluminum garnet crystal with 787.3, 787.9 and 790 nm laser diodes. In the case of 787.3 nm, the reversed-phase wave forms were obtained in a temperature range of 15–1100 K. In the case of 787.9 and 790 nm, they were observed up to 1400 K. It has been confirmed that the negative nonlinear absorption effect can be explained by considering an enhanced absorption model for a five-level system of the Er3+ ion. The effect has a characteristic, which is almost independent of the ambient temperature because it is formed by optical transitions of the inner shell of the erbium atom. © 1998 American Institute of Physics.
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42.65.-k Nonlinear optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Optical mixing to 211 GHz using 50 nm gate pseudomorphic high electron mobility transistors

M. E. Ali, D. Bhattacharya, H. R. Fetterman, and M. Matloubian

Appl. Phys. Lett. 72, 398 (1998); http://dx.doi.org/10.1063/1.120769 (3 pages) | Cited 1 time

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We report optical mixing with difference frequencies to 211 GHz in 50 nm gate pseudomorphic InP-based high electron mobility transistors (HEMTs). To our knowledge, this is the highest frequency optical mixing signal obtained in three terminal devices. To detect the signals at these frequencies, a novel three-wave-mixing configuration was employed. To demonstrate the wide tunability of this setup, a sweep of frequencies from 160 to 190 GHz was performed. The optically generated millimeter wave signals were downconverted to 97 GHz and radiated. For the radiation experiments, tunable baseband signals were also added by injection into the gate terminal of our HEMTs, thereby providing a method to transmit information. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Raman effect based modulator for high power fiber lasers

I. Torres, A. N. Starodumov, Yu. O. Barmenkov, L. A. Zenteno, and P. Gavrilovic

Appl. Phys. Lett. 72, 401 (1998); http://dx.doi.org/10.1063/1.120770 (3 pages) | Cited 3 times

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We demonstrate experimentally an all-fiber nonlinear optical modulator which can find application for high power (greater than 20 W) single-mode fiber lasers. Stimulated Raman scattering is used to transfer the amplitude modulation from a low-power signal beam at the Stokes frequency onto a high-power beam. Efficient modulation of 1064 nm pump radiation by 100 ps Stokes pulses is demonstrated in a highly Ge-doped fiber. © 1998 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
42.55.Wd Fiber lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.55.Ye Raman lasers

Loss measurements on semiconductor lasers by Fourier analysis of the emission spectra

Daniel Hofstetter and Robert L. Thornton

Appl. Phys. Lett. 72, 404 (1998); http://dx.doi.org/10.1063/1.120771 (3 pages) | Cited 10 times

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We present a study on a novel method for the determination of the cavity losses in semiconductor lasers. The method we use involves Fourier analysis of the Fabry–Pérot mode spectrum when operating the device below lasing threshold. The observation of the decay rate of higher order harmonics in the Fourier analysis of the spectra allows us to determine the amount of cavity propagation loss/gain. A comparison between experimental and calculated data for an AlGaInP laser at 670 nm showed good agreement up to an injection current of 0.93×Ith. This method therefore provides a generalization of the Fabry–Pérot contrast measurement method for extracting cavity losses from spectral information. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.40.Fy Semiconductors

Amplified spontaneous emission of an Nd3+-doped poly(methyl methacrylate) optical fiber at ambient temperature

Q. J. Zhang, P. Wang, X. F. Sun, Y. Zhai, P. Dai, B. Yang, M. Hai, and J. P. Xie

Appl. Phys. Lett. 72, 407 (1998); http://dx.doi.org/10.1063/1.120772 (3 pages) | Cited 29 times

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Polymer optical fibers have received much attention in recent years as they can replace silica glass fibers in local area nets in the future. A neodymium ion (Nd3+)-doped poly(methyl methacrylate) (PMMA) fiber has been made from Nd3+ containing PMMA as a core and silica resin as claddings. Fluorescence of the fiber results from the transition of 4G5/2 to 4I9/2 in a three energy level system. Amplified spontaneous emission (ASE) at 575 nm has also been observed and the critical power at a pump wavelength of 514.5 nm for the onset of ASE has been found to be 85 mW. © 1998 American Institute of Physics.
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42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
42.70.Jk Polymers and organics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.81.Bm Fabrication, cladding, and splicing
78.45.+h Stimulated emission
78.55.Kz Solid organic materials

Organic solid-state lasers with imprinted gratings on plastic substrates

M. Berggren, A. Dodabalapur, R. E. Slusher, A. Timko, and O. Nalamasu

Appl. Phys. Lett. 72, 410 (1998); http://dx.doi.org/10.1063/1.120773 (2 pages) | Cited 77 times

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Optically pumped laser emission has been observed from thin films of 8-hydroxyquinolinato aluminum (Alq) doped with a DCM dye deposited on a diffraction grating formed by imprinting a film of BCB with a mold. The BCB film, which is 4 μm thick, is deposited on a silicon or a flexible plastic substrate. Laser emission occurs at a wavelength near 655 nm which corresponds to the third order of the grating, which has a periodicity of ∼ 0.6 μm. © 1998 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.79.Dj Gratings
42.86.+b Optical workshop techniques

Generation of programmable multi-wavelength picosecond pulses using an optical-loop-mirror multiplexer

K. S. Lee and C. Shu

Appl. Phys. Lett. 72, 412 (1998); http://dx.doi.org/10.1063/1.120774 (3 pages) | Cited 1 time

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An all fiberoptic configuration to generate multi-wavelength picosecond optical pulses by self-seeding of a gain-switched 1.53 μm semiconductor laser has been proposed and experimentally demonstrated. The configuration consists of a 600 m highly dispersive fiber and an optical loop mirror multiplexer. Four-wavelength optical pulses with a spectral separation of 2.6 nm, a side-mode-suppression ratio of 16 to 20 dB, and a pulse width of 75 ps have been generated. The repetition rate of these pulses has been multiplied to 3.4 GHz, and totally 13.6 Gb/s (4×3.4 Gb/s) pulse signals have been produced. With the optical bit patterns generated from the multiplexer, output pulses with one, two, or four wavelengths at different combinations can be obtained. © 1998 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Bh Lenses, prisms and mirrors
42.81.Qb Fiber waveguides, couplers, and arrays
42.55.Px Semiconductor lasers; laser diodes
42.81.Dp Propagation, scattering, and losses; solitons

Ultraviolet and violet GaN light emitting diodes on silicon

Supratik Guha and Nestor A. Bojarczuk

Appl. Phys. Lett. 72, 415 (1998); http://dx.doi.org/10.1063/1.120775 (3 pages) | Cited 55 times

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We report the fabrication and characterization of GaN-based double heterostructure light emitting diodes grown by molecular beam epitaxy on Si(111) substrates. Light emitting diode operation is achieved by using the conducting Si(111) substrate as a backside n contact and a standard transparent Ni/Au p contact. We observe electroluminescence peaked in the ultraviolet ∼ 360 nm, with a full width at half maximum of ∼ 17 nm and in the violet at ∼420 nm. Electron microscopy studies indicate a high density of threading and planar defects. Consequences of these are discussed. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Image storage based on biphotonic holography in azo/polymer system

Pengfei Wu, Xiaochun Wu, Li Wang, Jiren Xu, Bingsuo Zou, Xiong Gong, and Wei Huang

Appl. Phys. Lett. 72, 418 (1998); http://dx.doi.org/10.1063/1.120776 (3 pages) | Cited 9 times

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Image storage has been investigated with the biphotonic holographic method in an azo/polymer film. Experimental results show that this biphotonic holographic storage has high spatial resolution and exhibits an image enhancement effect after blocking the noncoherent light. The mechanism of biphotonic holographic storage is attributed to the redistribution of cis form azo molecules induced by both coherent light and noncoherent light. © 1998 American Institute of Physics.
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42.70.Ln Holographic recording materials; optical storage media
42.79.Vb Optical storage systems, optical disks
42.40.Ht Hologram recording and readout methods
42.30.Va Image forming and processing
42.70.Jk Polymers and organics
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