APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Jan 1998

Volume 72, Issue 4, pp. 395-509

Return to All Sections
back to top
RSS Feeds

Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, P. R. Duncombe, D. A. Neumayer, D. E. Kotecki, H. Shen, and Q. Y. Ma

Appl. Phys. Lett. 72, 498 (1998); http://dx.doi.org/10.1063/1.120796 (3 pages) | Cited 94 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie–von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band. © 1998 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Two-step process for improved diamond deposition on titanium alloys at moderate temperature

L. Vandenbulcke, D. Rats, M. I. De Barros, R. Benoît, R. Erre, and P. Andreazza

Appl. Phys. Lett. 72, 501 (1998); http://dx.doi.org/10.1063/1.120797 (3 pages) | Cited 26 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple two-step process is reported here to deposit diamond coatings on titanium alloys at temperatures equal to or lower than 600 °C. The first step allows us to increase the carbon nucleation rate and to deposit a sacrificial layer which contains more than about 25% sp2 carbon. Its thickness is selected both to limit the interaction of titanium element with the plasmas used for diamond growth during all the second step, even when an oxygen-containing mixture is used, and to diffuse completely at the end of the process. After the first step, the formation of titanium carbide is observed by x-ray diffraction and x-ray photoelectron spectroscopy, which does not reveal any oxygen incorporation in the coating-substrate interfacial region. These results are related to the final strong diamond adherence. © 1998 American Institute of Physics.
Show PACS
81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.Gy Mechanical properties; surface strains

Nanometer-scale imaging with an ultrafast scanning tunneling microscope

G. M. Steeves, A. Y. Elezzabi, and M. R. Freeman

Appl. Phys. Lett. 72, 504 (1998); http://dx.doi.org/10.1063/1.120798 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present experimental data demonstrating the spatial resolution of an ultrafast junction mixing scanning tunneling microscope (JM-STM). The experiment uses a patterned metal-on-metal (Ti/Au) surface to establish electronic structure contrast on a short length scale. Our measurements achieve a spatio-temporal resolution of 20 nm–20 ps, limited only by the sample properties. The fine spatial resolution proves that the time-resolved signal is generated in the tunnel junction, indicating that atomic resolution should be possible in the JM-STM mode of operation. © 1998 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Cz Scanning tunneling microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Ct Interface structure and roughness

Improved low frequency and microwave dielectric response in strontium titanate thin films grown by pulsed laser ablation

M. J. Dalberth, R. E. Stauber, J. C. Price, C. T. Rogers, and David Galt

Appl. Phys. Lett. 72, 507 (1998); http://dx.doi.org/10.1063/1.120799 (3 pages) | Cited 72 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures. The complex dielectric function was measured as a function of temperature and electric field bias using a microwave ring resonator and a flip-chip technique. The films having the highest dielectric constant were grown with an oxygen pressure of 600 mTorr and showed large grains in the plane of the film. The small-signal dielectric constant of these films could be changed by a factor of 4 by applying an electric field. The films with the highest dielectric constant showed increased losses, but an improved figure of merit for application to tunable circuits. © 1998 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close