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2 Feb 1998

Volume 72, Issue 5, pp. 513-622

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Kinetics of charge carrier recombination in organic light-emitting diodes

J. Kalinowski, N. Camaioni, P. Di Marco, V. Fattori, and A. Martelli

Appl. Phys. Lett. 72, 513 (1998); http://dx.doi.org/10.1063/1.120805 (3 pages) | Cited 45 times

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The temporal behavior of the electroluminescence (EL) from thin-film indium-tin-oxide (ITO)/aromatic diamine (TPD)/Al(III) 8-hydroxyquinoline (Alq3)/Mg/Ag light-emitting diodes (LEDs) upon the application of a rectangular driving voltage is analyzed in terms of the electron-hole recombination on the TPD/Alq3 interface. From the long-time component of the temporal decay of the EL intensity the electron-hole recombination coefficient γ = (1.1±0.5)×10−10 cm3/s is determined in good agreement with the value expected on the basis of the Langevin theory of recombination with the recombination process controlled by the motion of holes in the hole-transporting TPD layer of the LED. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Optical and photoelectric properties of CdxHg1−xTe solid solutions (0.35<x<0.40)

Alexander I. Belogorokhov, Alexander G. Belov, Vladimir M. Lakeenkov, and Lubov I. Belogorokhova

Appl. Phys. Lett. 72, 516 (1998); http://dx.doi.org/10.1063/1.120806 (3 pages) | Cited 3 times

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This analysis is made of the spectral dependences of the position of the fundamental absorption edge, the photoconductivity, and the optical spectra of CdxHg1−xTe (0.35<x<0.40) alloys at temperatures 5–300 K in the wave number region (30–5000) cm−1. The nonmonotonic dependence on temperature of the parameters considered is investigated. The reflection spectra are analyzed mathematically by means of dispersion analysis and the Kramers–Kroning relations. The results obtained are explained by the influence of polaron effects on the processes of charge transport in the crystal. It is conjectured that the polaron configuration changes at the characteristic temperatures 60, 160, and 225 K. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors

Ink-jet printing of doped polymers for organic light emitting devices

T. R. Hebner, C. C. Wu, D. Marcy, M. H. Lu, and J. C. Sturm

Appl. Phys. Lett. 72, 519 (1998); http://dx.doi.org/10.1063/1.120807 (3 pages) | Cited 303 times

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Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics

A model for photoemission from prepoled ferroelectric ceramics

G. Benedek and I. Boscolo

Appl. Phys. Lett. 72, 522 (1998); http://dx.doi.org/10.1063/1.120808 (3 pages) | Cited 6 times

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The emission of electrons from a prepoled ferroelectric material when shined with a laser light pulse cannot be interpreted as a normal photoemission process, nor due to polarization switching. Another picture is proposed for the emission: in a prepoled ferroelectric disk a very narrow layer of electrons is set at the surface. The high-power laser pulse is absorbed by the electrons and an Auger process occurs. Hence, part of the hot electrons acquire enough energy to tunnel and/or to overcome the potential barrier and exit the crystal. © 1998 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
77.80.-e Ferroelectricity and antiferroelectricity

New phosphor (Gd2−xZnx)O3−δ:Eu3+ with high luminescent efficiency and superior chromaticity

Xiao-Dong Sun and X.-D. Xiang

Appl. Phys. Lett. 72, 525 (1998); http://dx.doi.org/10.1063/1.120809 (3 pages) | Cited 36 times

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A new phosphor, (Gd1.54Zn0.46)O3−δ:Eu0.063+, with a photoluminescent quantum efficiency of ≈ 86% and a superior color chromaticity (x = 0.656, y = 0.344) compared to the state of art red phosphor Y2O3:Eu3+ was identified using the combinatorial thin film synthesis method. This phosphor may replace Y2O3:Eu3+ in display applications where a more saturated red phosphor is preferred. © 1998 American Institute of Physics.
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78.55.Hx Other solid inorganic materials

Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells

Y. C. Cheng, K. Tai, S. T. Chou, K. F. Huang, and S. L. Tu

Appl. Phys. Lett. 72, 528 (1998); http://dx.doi.org/10.1063/1.120810 (3 pages) | Cited 2 times

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Alterable temperature-dependent emission wavelength shifts were observed from (InP)2/(GaP)2 short-period superlattices (SPSs) quantum wells grown with different interruption periods. Photoluminescence spectra showed that the peak energy of the SPS samples is inversely proportional to the interruption time conducted between the two consecutive binary growth sequences in the SPS regions. It is believed that a lateral composition modulation occurred during the interruption period which resulted in periodic In-rich and Ga-rich regions in the SPS quantum wells along the growth plane. With the lateral compositional variation, temperature variation can induce a multiaxial strain effect which can either amplify or reduce the temperature-dependent wavelength shift of the SPS quantum wells with different interruption periods. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Continuous wave laser radiation at 524 nm from a self-frequency-doubled laser of LaBGeO5:Nd3+

J. Capmany, D. Jaque, J. García Solé, and A. A. Kaminskii

Appl. Phys. Lett. 72, 531 (1998); http://dx.doi.org/10.1063/1.120811 (3 pages) | Cited 22 times

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This letter reports continuous wave laser emission at 524 nm from a self-frequency-doubled infrared laser of LaBGeO5:Nd3+ operating at a fundamental wavelength of 1048 nm. Resonant pumping in the spectral region around 800 nm for laser diode pumping is investigated and optical losses are estimated. © 1998 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Observation of an anomalously large blueshift of apparent donor–acceptor pair transition peak in compensation-doped quantum wells

Y. J. Ding, R. Korotkov, J. B. Khurgin, W. S. Rabinovich, and D. S. Katzer

Appl. Phys. Lett. 72, 534 (1998); http://dx.doi.org/10.1063/1.120812 (3 pages) | Cited 4 times

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We have observed an anomalously large blueshift of the apparent donor–acceptor pair transition peak as the laser intensity increases in compensation-doped coupled quantum wells. The mechanism for the blueshift is the change of the Coulomb interaction energy between the recombined donors and acceptors due to the decrease in their separation as the laser intensity increases. The blueshift is accompanied by the saturation of the relative donor–acceptor pair transition peak intensity due to filling of the impurity states. © 1998 American Institute of Physics.
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78.55.-m Photoluminescence, properties and materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Nonlinear contradirectional coupler

D. Campi, C. Coriasso, A. Stano, L. Faustini, C. Cacciatore, C. Rigo, and G. Meneghini

Appl. Phys. Lett. 72, 537 (1998); http://dx.doi.org/10.1063/1.120750 (3 pages) | Cited 5 times

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Results of room-temperature experiments with a multiple-quantum-well, nonlinear, contradirectional coupler are reported. A power-dependent, contradirectional coupling condition is demonstrated, inducing an optically controlled switching of optical signals, with a switching energy of 1 pJ. © 1998 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Gn Optical waveguides and couplers
42.65.Wi Nonlinear waveguides
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Long term stability of a poled side-chain nonlinear optical polymer

Hong-Tai Man and Hyun Nam Yoon

Appl. Phys. Lett. 72, 540 (1998); http://dx.doi.org/10.1063/1.120751 (2 pages) | Cited 5 times

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A side-chain nonlinear optical polymer consisting of copolymers of 4-methylamino-4′-nitrostilbene and methacrylate was poled and shown to be orientationally stable for almost 8 yrs. At approximately 110 °C below its glass transition, its electrooptic coefficient was reduced by less than 25% of its initial value. In addition, adding an annealing step during the poling process further improved its orientational stability. These behaviors are consistent with existing empirical models describing poling relaxation of nonlinear optical polymers, and demonstrate that with appropriate molecular design, they can become viable nonlinear optical materials for commercial devices. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
77.22.Ej Polarization and depolarization
78.20.Jq Electro-optical effects
42.65.-k Nonlinear optics
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
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Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors

J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell

Appl. Phys. Lett. 72, 542 (1998); http://dx.doi.org/10.1063/1.120752 (3 pages) | Cited 25 times

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We report on the current transport mechanisms dominant at the Schottky interface of metal–semiconductor–metal photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled transport in the 1.5 μm devices using thermionic emission theory, and in the 4.0 μm devices using thermionic field emission theory. We have obtained a good fit to the experimental data. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented. © 1998 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ey III-V and II-VI semiconductors
79.40.+z Thermionic emission
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Homogeneous alignment of nematic liquid crystal induced by polyimide exposed to linearly polarized light

Yinghan Wang, Akihiko Kanazawa, Takeshi Shiono, Tomiki Ikeda, Yasuo Matsuki, and Yasumasa Takeuchi

Appl. Phys. Lett. 72, 545 (1998); http://dx.doi.org/10.1063/1.120753 (3 pages) | Cited 19 times

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Homogeneous alignment of a nematic liquid crystal (LC) was induced by a polyimide (PI) film containing diphenyl ether component exposed to linearly polarized light at 366 nm. Ultraviolet-visible absorption spectra showed that the change in the absorption of the PI was very small after exposure; the preliminary result indicated that the homogeneous alignment of a LC could be induced without significant change in the PI structure. © 1998 American Institute of Physics.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
61.41.+e Polymers, elastomers, and plastics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.40.Me Organic compounds and polymers
61.82.Pv Polymers, organic compounds

Fabrication of quantum devices by Ångström-level manipulation of nanoparticles with an atomic force microscope

T. Junno, S.-B. Carlsson, Hongqi Xu, L. Montelius, and L. Samuelson

Appl. Phys. Lett. 72, 548 (1998); http://dx.doi.org/10.1063/1.120754 (3 pages) | Cited 39 times

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We describe a technique for the fabrication of lateral nanometer-scale devices, in which individual metallic nanoparticles are imaged, selected and manipulated into a gap between two electrical leads with the tip of an atomic force microscope. In situ, real-time monitoring of the device characteristics is used to control the positions of the particles down to atomic accuracy and to tune the electrical properties of the device during fabrication. Using this technique we demonstrate a nanomechanical switch as well as atomic-scale contacts that are stable at quantized conductance levels on the time scale of hours at room temperature. © 1998 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.35.Ds Quantum interference devices
61.46.-w Structure of nanoscale materials
07.79.Lh Atomic force microscopes
07.10.Cm Micromechanical devices and systems
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Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas

Appl. Phys. Lett. 72, 551 (1998); http://dx.doi.org/10.1063/1.120755 (3 pages) | Cited 65 times

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We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼ 0.05 A/W at 0 V, and ∼ 0.1 A/W with a −4 V bias. The dark current is ∼ 60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
07.60.-j Optical instruments and equipment
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
73.40.Ns Metal-nonmetal contacts

Hydrogen-related photoluminescence in CdTe

J. Hamann, D. Blass, C. Casimir, T. Filz, V. Ostheimer, C. Schmitz, H. Wolf, Th. Wichert, A. Burchard, M. Deicher, and R. Magerle

Appl. Phys. Lett. 72, 554 (1998); http://dx.doi.org/10.1063/1.120756 (3 pages) | Cited 3 times

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CdTe, nominally undoped, was exposed to a hydrogen plasma and to low energy H+ implantation. Under both conditions, seven typical photoluminescence lines are observed in the excitonic region. They are assigned to the presence of hydrogen in CdTe. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
78.55.Et II-VI semiconductors

Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

S. Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan, and C. J. Sun

Appl. Phys. Lett. 72, 557 (1998); http://dx.doi.org/10.1063/1.120757 (3 pages) | Cited 12 times

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The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
63.20.kk Phonon interactions with other quasiparticles
71.35.Gg Exciton-mediated interactions
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
73.50.-h Electronic transport phenomena in thin films

Smooth n-type GaN surfaces by photoenhanced wet etching

C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman

Appl. Phys. Lett. 72, 560 (1998); http://dx.doi.org/10.1063/1.120758 (3 pages) | Cited 62 times

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A room-temperature photoelectrochemical wet etching process is described that produces smoothly etched GaN surfaces using KOH solution and Hg arc lamp illumination. Atomic force microscope measurements indicate a root-mean-square etched surface roughness of 1.5 nm, which compares favorably to the unetched surface roughness of approximately 0.3 nm. Etch rates of 50 nm/min were obtained using a KOH solution concentration of 0.02 M and an illumination intensity of 40 mW/cm2. It is shown that the smooth etching occurs under conditions of low KOH solution concentration and high light intensities, which result in a diffusion-limited etch process. © 1998 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
82.45.-h Electrochemistry and electrophoresis
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Ea III-V semiconductors

Interband transition studies on CdxZn1−xTe/ZnTe step quantum wells under applied electric fields

T. W. Kim, K. H. Lee, and H. L. Park

Appl. Phys. Lett. 72, 563 (1998); http://dx.doi.org/10.1063/1.120760 (3 pages) | Cited 10 times

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Photoluminescence (PL) measurements were carried out to investigate the interband transitions in CdxZn1−xTe/ZnTe asymmetric step quantum wells with and without an applied electric field. Transmission electron microscopy showed that the CdxZn1−xTe/ZnTe step quantum wells consisted of a shallow Cd0.1Zn0.9Te well and a deep Cd0.18Zn0.82Te well bound by two thick ZnTe barriers. The results for the PL data at 300 K for several applied electric fields showed that the excitonic transition from the first electronic state to the first heavy-hole state shifted to the larger energy side as the applied electric field increased. The electronic subband energies and the wave functions in the step quantum wells were calculated by an envelope-function approximation method, taking into account the strain effects, and the calculated values of the interband transitions were in qualitative agreement with those obtained from the PL measurements. The Stark shift of the step quantum well was much more sensitive to the applied electric field than that of the single quantum well. These results indicate that CdxZn1−xTe/ZnTe step quantum wells hold promise for potential applications such as new types of modulators and quantum-well infrared photodetectors in the blue–green region of the spectrum. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.20.Jq Electro-optical effects

Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates

Hans-Peter Schönherr, Jörg Fricke, Zhichuan Niu, Klaus-Jürgen Friedland, Richard Nötzel, and Klaus H. Ploog

Appl. Phys. Lett. 72, 566 (1998); http://dx.doi.org/10.1063/1.120761 (3 pages) | Cited 19 times

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Coherently aligned multi-atomic step arrays are naturally formed during molecular beam epitaxy (MBE) of GaAs/(AlGa)As heterostructures on GaAs (331) substrates. The step height systematically increases with the substrate temperature while the lateral periodicity remains almost unchanged. With atomic hydrogen irradiation the step height is larger by more than a factor of 2 compared to that in conventional MBE which is attributed to a larger surface migration length of adatoms. The higher uniformity in atomic hydrogen assisted MBE allows the formation of step arrays, 12–13 nm high with a lateral periodicity around 250 nm, and straight step edges over 10 μm length. The step arrays reveal a strong influence on the electron transport of Si-modulation-doped GaAs/(AlGa)As heterostructures with the conductivity parallel to the step edges at cryogenic temperatures more than one order of magnitude larger than that perpendicular to the steps. © 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors

Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects

D. Stiévenard, B. Grandidier, J. P. Nys, X. de la Broise, C. Delerue, and M. Lannoo

Appl. Phys. Lett. 72, 569 (1998); http://dx.doi.org/10.1063/1.120762 (3 pages) | Cited 4 times

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Scanning tunneling spectroscopy allows the determination of the density of states of the involved electrodes as well as the associated barrier height. We have measured the barrier height between tungsten tip and the GaAs (110) surface with a scanning tunneling microscope (STM) in ultrahigh vacuum. When the tunneling junction exhibited a low barrier height, we observed and explained an apparent widening of the GaAs gap which can mislead the real doping concentration of the sample. A theoretical model based on the self-consistent Keldysh–Green functions formalism is used to calculate the STM current. It shows a possible lowering of the barrier height according to the adsorption of As or Ga atoms on the apex of the tungsten tip. © 1998 American Institute of Physics.
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07.79.Cz Scanning tunneling microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.20.At Surface states, band structure, electron density of states

Hall magnetometer in the ballistic regime

F. M. Peeters and X. Q. Li

Appl. Phys. Lett. 72, 572 (1998); http://dx.doi.org/10.1063/1.120759 (3 pages) | Cited 68 times

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A Monte Carlo simulation of the ballistic motion of electrons in a mesoscopic Hall bar containing a local inhomogeneous magnetic field profile is presented. We find that in the regime of low magnetic fields, the Hall resistance is determined by the average magnetic field in the cross junction and is independent of the shape and position of this profile in the junction. Information on the size of the local magnetic field profile can also be obtained from the Hall measurement. The bend resistance, on the other hand, is much more precise on the exact details of the local magnetic field in the cross junction. © 1998 American Institute of Physics.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
07.55.Ge Magnetometers for magnetic field measurements
72.20.Ht High-field and nonlinear effects

Lateral confinement in ZnSe/ZnCdSe quantum wells grown on patterned substrates

W. Heiß, D. Stifter, G. Prechtl, A. Bonanni, H. Sitter, J. Liu, L. Tóth, and Á. Barna

Appl. Phys. Lett. 72, 575 (1998); http://dx.doi.org/10.1063/1.120763 (3 pages) | Cited 2 times

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ZnSe/Zn0.75Cd0.25Se quantum wells have been grown on GaAs submicron gratings. In these quantum structures, we observe an optical anisotropy induced by lateral confinement. Photoluminescence (PL) energy-shifts and the PL temperature dependence indicate a moderate modulation of the two-dimensional electron gas in the quantum well. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors

Atomistic simulation of SiH interactions with silicon surfaces during deposition from silane containing plasmas

Shyam Ramalingam, Dimitrios Maroudas, and Eray S. Aydil

Appl. Phys. Lett. 72, 578 (1998); http://dx.doi.org/10.1063/1.120764 (3 pages) | Cited 12 times

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A systematic atomic-scale analysis is presented of the interactions of SiH radicals from a silane plasma with amorphous hydrogenated silicon (a-Si:H) film surfaces based on molecular dynamics and Monte Carlo simulations. The coordination of the silicon surface atoms and the hydrogen surface concentration determine the mechanisms by which the SiH radical interacts with the surface and attaches itself to the film, as well as the “sticking” probability of the radical. On a-Si:H surfaces with low hydrogen concentration, SiH radicals remain on the surface and attach to silicon dangling bonds. In contrast, on a-Si:H surfaces with high hydrogen concentration and lower density of dangling bonds, radicals penetrate into the bulk film and attach to subsurface silicon atoms. An average reaction probability of 95% is predicted, which is in excellent agreement with recent experimental data. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Gc Amorphous semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

A universal damage induced technique for quantum well intermixing

O. P. Kowalski, C. J. Hamilton, S. D. McDougall, J. H. Marsh, A. C. Bryce, R. M. De La Rue, B. Vögele, C. R. Stanley, C. C. Button, and J. S. Roberts

Appl. Phys. Lett. 72, 581 (1998); http://dx.doi.org/10.1063/1.120765 (3 pages) | Cited 42 times

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We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor

H. J. Kim, D. M. Kim, D. H. Woo, S.-I. Kim, S. H. Kim, J. I. Lee, K. N. Kang, and K. Cho

Appl. Phys. Lett. 72, 584 (1998); http://dx.doi.org/10.1063/1.120813 (3 pages) | Cited 5 times

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In this letter, we report the electrical and optical characteristics of p-channel In0.13Ga0.87As double heterojunction pseudomorphic modulation-doped field effect transistor (MODFET) structure grown by gas source molecular beam epitaxy. The Hall mobility and the density of 2-DHGs (two-dimensional hole gases) in the pseudomorphic In0.13Ga0.87As channel were measured to be 250 cm2/V s and 1.9×1012 cm−2 at 300 K, and 5800 cm2/V s and 1.5×1012 cm−2 at 23 K, respectively. The fabricated p-channel MODFET shows a good mobility property which is due to high valence band discontinuity of InGaP/GaAs/InGaAs double barriers. The peak energy in the photoluminescence spectrum from the p-channel pseudomorphic MODFET structure was found to be 1.4 eV (λ=881 nm). The photoresponsivity with this modified pseudomorphic MODFET structure shows outstandingly better than that of a pin photodiode, particularly at low incident optical power. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
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