APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Feb 1998

Volume 72, Issue 5, pp. 513-622

Return to All Sections
back to top
RSS Feeds

Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors

J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell

Appl. Phys. Lett. 72, 542 (1998); http://dx.doi.org/10.1063/1.120752 (3 pages) | Cited 25 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the current transport mechanisms dominant at the Schottky interface of metal–semiconductor–metal photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 μm thickness. We have modeled transport in the 1.5 μm devices using thermionic emission theory, and in the 4.0 μm devices using thermionic field emission theory. We have obtained a good fit to the experimental data. We hypothesize that traps in the GaN are related to a combination of surface defects (possibly threading dislocations), and deep-level bulk states that are within a tunneling distance of the interface. A simple qualitative model is presented. © 1998 American Institute of Physics.
Show PACS
73.40.Sx Metal-semiconductor-metal structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ey III-V and II-VI semiconductors
79.40.+z Thermionic emission
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close