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2 Feb 1998

Volume 72, Issue 5, pp. 513-622

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Exchange-biased ferromagnetic tunnel junctions via reactive evaporation of nickel oxide films

Chang He Shang, Geetha P. Berera, and Jagadeesh S. Moodera

Appl. Phys. Lett. 72, 605 (1998); http://dx.doi.org/10.1063/1.120825 (3 pages) | Cited 15 times

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Nickel oxide films, prepared by reactive evaporation at room temperature, have shown good properties to be used as an exchange biasing antiferromagnet on ferromagnetic tunnel junctions. For instance, in the case of Co/Al2O3/Co/NiO junction, NiO shows an exchange field of 17 Oe at 295 K, increasing to 174 Oe at 77 K, and the junction magnetoresistances are 17% at 295 K and 22% at 77 K. The temperature dependence of the exchange field and junction magnetoresistance are also investigated between 77 K and 400 K. © 1998 American Institute of Physics.
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75.30.Et Exchange and superexchange interactions
73.40.Gk Tunneling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.70.Gm Exchange interactions
75.50.Cc Other ferromagnetic metals and alloys
75.50.Ee Antiferromagnetics

Effect of external stress on polarization in ferroelectric thin films

Tetsuo Kumazawa, Yukihiro Kumagai, Hideo Miura, Makoto Kitano, and Keiko Kushida

Appl. Phys. Lett. 72, 608 (1998); http://dx.doi.org/10.1063/1.120820 (3 pages) | Cited 74 times

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The polarization changes caused by applying mechanical stresses to a lead zirconate titanate (PZT) thin film were investigated. Both the remnant and spontaneous polarizations decreased when the PZT film was loaded with tensile stress. For compressive stresses, the remnant polarization increased, but spontaneous polarization did not change. In fatigue with tensile stress state, the polarization decreased earlier than when there was no stress, which depend on whether or not the initial polarization value was high. Conversely, in fatigue with compressive stress, the initial higher remnant polarization value was maintained compared with the polarization in the unstress condition. © 1998 American Institute of Physics.  
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
77.80.-e Ferroelectricity and antiferroelectricity

Exchange-biased spin valves combining a high magnetoresistance ratio with soft-magnetic behavior

J. C. S. Kools, S. Lardoux, and F. Roozeboom

Appl. Phys. Lett. 72, 611 (1998); http://dx.doi.org/10.1063/1.120821 (3 pages) | Cited 1 time

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We report on the preparation of bottom spin valves combining a high giant magnetoresistance effect (above 10%) with a soft-magnetic behavior (coercivities of a few hundreds of A/m). By optimization of film composition and preparation conditions, it is possible to obtain materials having magnetoresistance values around 16%, which display minor loop coercivities of 0.2 kA/m, and sensitivities of 11%/kA/m. © 1998 American Institute of Physics.
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75.47.De Giant magnetoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.30.Et Exchange and superexchange interactions

Magnetic expansion readout of 0.2 μm packed domains on a magneto-optical disk with an in-plane magnetized readout layer

Xiao Ying, Kastusuke Shimazaki, Hiroyuki Awano, Masahumi Yoshihiro, Hitoshi Watanabe, Norio Ohta, and K. V. Rao

Appl. Phys. Lett. 72, 614 (1998); http://dx.doi.org/10.1063/1.120822 (3 pages) | Cited 2 times

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We have investigated an in-plane magnetized readout-layer-based magnetic domain expansion phenomenon in a magneto-optical (MO) medium. Very high-density 0.2 μm packed domains are expanded up to three times the readout signal level in comparison with the conventional approach of applying alternative external field in the readout process. This result suggests that more than 10 Gbits/in. MO recording density may be achieved by implementing the domain expansion technique, using even the currently available 680 nm laser and numerical aperture of 0.55. © 1998 American Institute of Physics.
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85.70.Sq Magnetooptical devices
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
75.70.Kw Domain structure (including magnetic bubbles and vortices)
78.20.Ls Magneto-optical effects

Perpendicular coupling at Fe–FeF2 interfaces

T. J. Moran, J. Nogués, D. Lederman, and Ivan K. Schuller

Appl. Phys. Lett. 72, 617 (1998); http://dx.doi.org/10.1063/1.120823 (3 pages) | Cited 94 times

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We have studied the exchange anisotropy of ferromagnetic Fe films grown on antiferromagnetic FeF2 single crystals. The behavior of the hysteresis loops of the Fe above and below the Néel temperature TN of FeF2 indicates a 90° rotation of the ferromagnetic easy axis due to the antiferromagnetic ordering. By examining the Fe hysteresis loops together with the FeF2 susceptibility behavior we infer that below TN the ferromagnetic and antiferromagnetic spins are coupled perpendicular to each other. This behavior can be explained by recent micromagnetic calculations on exchange bias systems, or by magnetoelastic effects. © 1998 American Institute of Physics.
Show PACS
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Bb Fe and its alloys
75.50.Ee Antiferromagnetics
75.30.Et Exchange and superexchange interactions
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