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2 Feb 1998

Volume 72, Issue 5, pp. 513-622

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Kinetics of charge carrier recombination in organic light-emitting diodes

J. Kalinowski, N. Camaioni, P. Di Marco, V. Fattori, and A. Martelli

Appl. Phys. Lett. 72, 513 (1998); http://dx.doi.org/10.1063/1.120805 (3 pages) | Cited 45 times

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The temporal behavior of the electroluminescence (EL) from thin-film indium-tin-oxide (ITO)/aromatic diamine (TPD)/Al(III) 8-hydroxyquinoline (Alq3)/Mg/Ag light-emitting diodes (LEDs) upon the application of a rectangular driving voltage is analyzed in terms of the electron-hole recombination on the TPD/Alq3 interface. From the long-time component of the temporal decay of the EL intensity the electron-hole recombination coefficient γ = (1.1±0.5)×10−10 cm3/s is determined in good agreement with the value expected on the basis of the Langevin theory of recombination with the recombination process controlled by the motion of holes in the hole-transporting TPD layer of the LED. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Optical and photoelectric properties of CdxHg1−xTe solid solutions (0.35<x<0.40)

Alexander I. Belogorokhov, Alexander G. Belov, Vladimir M. Lakeenkov, and Lubov I. Belogorokhova

Appl. Phys. Lett. 72, 516 (1998); http://dx.doi.org/10.1063/1.120806 (3 pages) | Cited 3 times

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This analysis is made of the spectral dependences of the position of the fundamental absorption edge, the photoconductivity, and the optical spectra of CdxHg1−xTe (0.35<x<0.40) alloys at temperatures 5–300 K in the wave number region (30–5000) cm−1. The nonmonotonic dependence on temperature of the parameters considered is investigated. The reflection spectra are analyzed mathematically by means of dispersion analysis and the Kramers–Kroning relations. The results obtained are explained by the influence of polaron effects on the processes of charge transport in the crystal. It is conjectured that the polaron configuration changes at the characteristic temperatures 60, 160, and 225 K. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors

Ink-jet printing of doped polymers for organic light emitting devices

T. R. Hebner, C. C. Wu, D. Marcy, M. H. Lu, and J. C. Sturm

Appl. Phys. Lett. 72, 519 (1998); http://dx.doi.org/10.1063/1.120807 (3 pages) | Cited 302 times

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Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics

A model for photoemission from prepoled ferroelectric ceramics

G. Benedek and I. Boscolo

Appl. Phys. Lett. 72, 522 (1998); http://dx.doi.org/10.1063/1.120808 (3 pages) | Cited 6 times

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The emission of electrons from a prepoled ferroelectric material when shined with a laser light pulse cannot be interpreted as a normal photoemission process, nor due to polarization switching. Another picture is proposed for the emission: in a prepoled ferroelectric disk a very narrow layer of electrons is set at the surface. The high-power laser pulse is absorbed by the electrons and an Auger process occurs. Hence, part of the hot electrons acquire enough energy to tunnel and/or to overcome the potential barrier and exit the crystal. © 1998 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
77.80.-e Ferroelectricity and antiferroelectricity

New phosphor (Gd2−xZnx)O3−δ:Eu3+ with high luminescent efficiency and superior chromaticity

Xiao-Dong Sun and X.-D. Xiang

Appl. Phys. Lett. 72, 525 (1998); http://dx.doi.org/10.1063/1.120809 (3 pages) | Cited 35 times

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A new phosphor, (Gd1.54Zn0.46)O3−δ:Eu0.063+, with a photoluminescent quantum efficiency of ≈ 86% and a superior color chromaticity (x = 0.656, y = 0.344) compared to the state of art red phosphor Y2O3:Eu3+ was identified using the combinatorial thin film synthesis method. This phosphor may replace Y2O3:Eu3+ in display applications where a more saturated red phosphor is preferred. © 1998 American Institute of Physics.
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78.55.Hx Other solid inorganic materials

Alterable temperature-dependent wavelength shifts in (InP)2/(GaP)2 quantum wells

Y. C. Cheng, K. Tai, S. T. Chou, K. F. Huang, and S. L. Tu

Appl. Phys. Lett. 72, 528 (1998); http://dx.doi.org/10.1063/1.120810 (3 pages) | Cited 2 times

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Alterable temperature-dependent emission wavelength shifts were observed from (InP)2/(GaP)2 short-period superlattices (SPSs) quantum wells grown with different interruption periods. Photoluminescence spectra showed that the peak energy of the SPS samples is inversely proportional to the interruption time conducted between the two consecutive binary growth sequences in the SPS regions. It is believed that a lateral composition modulation occurred during the interruption period which resulted in periodic In-rich and Ga-rich regions in the SPS quantum wells along the growth plane. With the lateral compositional variation, temperature variation can induce a multiaxial strain effect which can either amplify or reduce the temperature-dependent wavelength shift of the SPS quantum wells with different interruption periods. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Continuous wave laser radiation at 524 nm from a self-frequency-doubled laser of LaBGeO5:Nd3+

J. Capmany, D. Jaque, J. García Solé, and A. A. Kaminskii

Appl. Phys. Lett. 72, 531 (1998); http://dx.doi.org/10.1063/1.120811 (3 pages) | Cited 22 times

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This letter reports continuous wave laser emission at 524 nm from a self-frequency-doubled infrared laser of LaBGeO5:Nd3+ operating at a fundamental wavelength of 1048 nm. Resonant pumping in the spectral region around 800 nm for laser diode pumping is investigated and optical losses are estimated. © 1998 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Observation of an anomalously large blueshift of apparent donor–acceptor pair transition peak in compensation-doped quantum wells

Y. J. Ding, R. Korotkov, J. B. Khurgin, W. S. Rabinovich, and D. S. Katzer

Appl. Phys. Lett. 72, 534 (1998); http://dx.doi.org/10.1063/1.120812 (3 pages) | Cited 4 times

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We have observed an anomalously large blueshift of the apparent donor–acceptor pair transition peak as the laser intensity increases in compensation-doped coupled quantum wells. The mechanism for the blueshift is the change of the Coulomb interaction energy between the recombined donors and acceptors due to the decrease in their separation as the laser intensity increases. The blueshift is accompanied by the saturation of the relative donor–acceptor pair transition peak intensity due to filling of the impurity states. © 1998 American Institute of Physics.
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78.55.-m Photoluminescence, properties and materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Nonlinear contradirectional coupler

D. Campi, C. Coriasso, A. Stano, L. Faustini, C. Cacciatore, C. Rigo, and G. Meneghini

Appl. Phys. Lett. 72, 537 (1998); http://dx.doi.org/10.1063/1.120750 (3 pages) | Cited 5 times

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Results of room-temperature experiments with a multiple-quantum-well, nonlinear, contradirectional coupler are reported. A power-dependent, contradirectional coupling condition is demonstrated, inducing an optically controlled switching of optical signals, with a switching energy of 1 pJ. © 1998 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Gn Optical waveguides and couplers
42.65.Wi Nonlinear waveguides
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Long term stability of a poled side-chain nonlinear optical polymer

Hong-Tai Man and Hyun Nam Yoon

Appl. Phys. Lett. 72, 540 (1998); http://dx.doi.org/10.1063/1.120751 (2 pages) | Cited 5 times

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A side-chain nonlinear optical polymer consisting of copolymers of 4-methylamino-4′-nitrostilbene and methacrylate was poled and shown to be orientationally stable for almost 8 yrs. At approximately 110 °C below its glass transition, its electrooptic coefficient was reduced by less than 25% of its initial value. In addition, adding an annealing step during the poling process further improved its orientational stability. These behaviors are consistent with existing empirical models describing poling relaxation of nonlinear optical polymers, and demonstrate that with appropriate molecular design, they can become viable nonlinear optical materials for commercial devices. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
77.22.Ej Polarization and depolarization
78.20.Jq Electro-optical effects
42.65.-k Nonlinear optics
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
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