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9 Feb 1998

Volume 72, Issue 6, pp. 627-747

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Self-ordering and confinement in strained InGaAs/AlGaAs V-groove quantum wires grown by low-pressure organometallic chemical vapor deposition

E. Martinet, F. Reinhardt, A. Gustafsson, G. Biasiol, and E. Kapon

Appl. Phys. Lett. 72, 701 (1998); http://dx.doi.org/10.1063/1.120850 (3 pages) | Cited 15 times

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The structure and low temperature luminescence properties of compressively strained InGaAs/AlGaAs quantum wire (QWR) arrays grown by low-pressure organometallic chemical vapor deposition on V-grooved substrates are reported. The strain gives rise to quasi-periodic undulations of the wire facets along the wire axis, resulting in ordered chains of quantum dotlike structures. Low-temperature photoluminescence shows efficient emission from the wires with narrow (as low as 9.8 meV) linewidths and relatively high intensities. At high excitation densities, several quasi-one-dimensional QWR subbands appear as a result of bandfilling, presenting virtually no energy shifts (<2 meV), even when several ( ≥ 3) subbands are filled. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

Tetsu Kachi, Kazuyoshi Tomita, Kenji Itoh, and Hiroshi Tadano

Appl. Phys. Lett. 72, 704 (1998); http://dx.doi.org/10.1063/1.120851 (3 pages) | Cited 28 times

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A new buffer layer to grow high-quality GaN films was proposed. The new buffer layer consisted of a thin (20–30 nm) InN layer deposited at low temperature ( ∼ 600 °C). GaN films were grown on (1120)-oriented (A-face) sapphire substrates using a conventional GaN buffer layer and an InN buffer layer by atmospheric pressure metalorganic vapor phase epitaxy. Dislocations in the GaN films were observed by cross-sectional transmission electron microscopy (TEM). The dislocation densities were measured from the TEM observation and were ∼ 4×109 and ∼ 6×108 cm−2 for epilayers with the GaN and the InN buffer, respectively. The low dislocation density by the InN buffer was attributed to relaxation of the stress in the GaN epilayers due to the low melting point of InN. GaN epilayers using the InN buffer also showed good electrical properties. © 1998 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaska, J. W. Yang, A. Osinsky, Q. Chen, M. Asif Khan, A. O. Orlov, G. L. Snider, and M. S. Shur

Appl. Phys. Lett. 72, 707 (1998); http://dx.doi.org/10.1063/1.120852 (3 pages) | Cited 84 times

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We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns ≈ 1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T = 0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH = 2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH = 10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Pit formation in GaInN quantum wells

Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang

Appl. Phys. Lett. 72, 710 (1998); http://dx.doi.org/10.1063/1.120853 (3 pages) | Cited 45 times

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The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈1101〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.05.Ea III-V semiconductors

Low frequency noise in β-FeSi2/n-Si heterojunctions

D. H. Tassis, C. A. Dimitriadis, J. Brini, G. Kamarinos, M. Angelakeris, and N. Flevaris

Appl. Phys. Lett. 72, 713 (1998); http://dx.doi.org/10.1063/1.120854 (3 pages) | Cited 2 times

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Low frequency noise of β-FeSi2/n-Si heterojunctions has been systematically studied with the silicide layer formed by conventional furnace and rapid thermal annealing processes. The noise was found to exhibit 1/f behavior attributed to fluctuations of the generation-recombination current at the interface states. It is shown that noise measurements provide a means of calculating the density and energy distribution of the interface states. The results show that the interface state density is significantly reduced when the silicide is formed by rapid thermal annealing process. © 1998 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.70.+m Noise processes and phenomena
61.72.Cc Kinetics of defect formation and annealing
72.80.Jc Other crystalline inorganic semiconductors
72.80.Cw Elemental semiconductors

Atomic force microscope lithography on carbonaceous films deposited by electron-beam irradiation

Adrian Avramescu, Akio Ueta, Katsuhiro Uesugi, and Ikuo Suemune

Appl. Phys. Lett. 72, 716 (1998); http://dx.doi.org/10.1063/1.120855 (3 pages) | Cited 8 times

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A nanometer-scale mask that can be used for selective growth or selective etching was obtained by two-stage patterning. In the first step, a microscopic patterning was performed using a scanning electron microscope (SEM). In the SEM the mask was deposited by decomposition of residual oil molecules in the vicinity of the semiconductor surface. In the second stage, patterning of the carbonaceous film was made using an atomic force microscope (AFM). Use of the AFM assures not only a precise alignment with the previous marks but also a better resolution. Applying an electric bias between the conductive tip and the substrate surface previously covered with the carbonaceous film gave the local modification of the film composition. Further etching resulted in the pattern formation on the semiconductor surface with a minimum linewidth of ∼ 22 nm. © 1998 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration

R. Sasagawa, H. Sugawara, Y. Ohno, H. Nakajima, S. Tsujino, H. Akiyama, and H. Sakaki

Appl. Phys. Lett. 72, 719 (1998); http://dx.doi.org/10.1063/1.120856 (3 pages) | Cited 16 times

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Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Observation of the size-dependent blueshifted electroluminescence from nanocrystalline Si fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiNx:H superlattices

Mingxiang Wang, Xinfan Huang, Jun Xu, Wei Li, Zhiguo Liu, and Kunji Chen

Appl. Phys. Lett. 72, 722 (1998); http://dx.doi.org/10.1063/1.120857 (3 pages) | Cited 29 times

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Nanocrystalline silicon (nc-Si) was fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiNx:H superlattices. A stable and reproducible electroluminescence (EL) based on these structures was observed at room temperature. It was found that the EL peak was significantly blueshifted from 780 to 600 nm with decreasing the a-Si:H sublayer thickness from 4.0 to 1.0 nm, while the intensity was also notably enhanced. The results suggest that the quantum confinement effect may play an essential role in visible light emissions from our present samples. © 1998 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing

Observation of Si cluster formation in SiO2 films through annealing process using x-ray photoelectron spectroscopy and infrared techniques

Katsuhiko Furukawa, Yichun Liu, Hiroshi Nakashima, Dawei Gao, Kiichiro Uchino, Katsunori Muraoka, and Hirohisa Tsuzuki

Appl. Phys. Lett. 72, 725 (1998); http://dx.doi.org/10.1063/1.120865 (3 pages) | Cited 13 times

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SiO2 films having high breakdown characteristics were deposited by a sputtering-type electron cyclotron resonance microwave plasma at room temperature. As-deposited films were annealed in an Ar ambient at temperatures ranging from 450 to 1000 °C. Transmitted infrared (IR) absorption and x-ray photoelectron spectroscopy (XPS) were used to characterize the as-deposited and annealed films. XPS measurements indicated that the as-deposited films had an approximately stoichiometric composition containing a few intermediate SiOx(x ≠ 2) species and Ar atoms around some dangling-bond defects. The dependence of XPS spectra on annealing temperature showed that steep diffusion of the Ar atoms occurs at annealing temperatures of 450–550 °C and the SiOx species separate into SiO2 phase and Si clusters by an annealing process of 750–950 °C. Based on the full width at half-maximum variations of Si 2p XPS spectra and Si–O stretching mode of IR spectra for the annealed films, we discuss the Si cluster formation in SiO2 films through the annealing process. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
81.15.Cd Deposition by sputtering

Local environment of erbium atoms in amorphous hydrogenated silicon

V. F. Masterov, F. S. Nasredinov, P. P. Seregin, V. Kh. Kudoyarova, A. N. Kuznetsov, and E. I. Terukov

Appl. Phys. Lett. 72, 728 (1998); http://dx.doi.org/10.1063/1.120866 (3 pages) | Cited 27 times

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The 169Er(169Tm)emission Mössbauer spectroscopy has evidenced that photoluminescence centers in Er-doped amorphous hydrogenated silicon are [Er–O] clusters. The local environment of the Er3+ ions in the clusters is similar to the Er3+ environment in Er2O3. © 1998 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
76.80.+y Mössbauer effect; other γ-ray spectroscopy
78.55.Ap Elemental semiconductors
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Temperature dependence of the current-phase relation for YBa2Cu3O7−x step-edge Josephson junctions

E. Il’ichev, V. Zakosarenko, V. Schultze, H.-G. Meyer, H. E. Hoenig, V. N. Glyantsev, and A. Golubov

Appl. Phys. Lett. 72, 731 (1998); http://dx.doi.org/10.1063/1.120858 (3 pages) | Cited 15 times

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The current-phase relation (CPR) of YBa2Cu3O7−x step-edge Josephson junctions was investigated experimentally at various temperatures. The investigated junctions were incorporated into a washer-shaped superconducting ring with inductance L ∼ 300 pH. The ring was inductively coupled to a tank circuit with a resonance frequency between 9 MHz and 40 MHz. The CPR was obtained from the measurement of the impedance of the phase-biased junction. At high temperatures and low critical current the experimentally observed CPR is sinusoidal. The same results were obtained at low temperatures when the rms flux noise in the ring is negligible. In the case of larger critical current and finite noise, deviations of the apparent CPR from sinusoidal dependence were found. The deviations can be described by thermal fluctuations of the magnetic flux in the ring. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.50.+r Tunneling phenomena; Josephson effects
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
74.40.-n Fluctuation phenomena
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Magnetoresistance of magnetite

J. M. D. Coey, A. E. Berkowitz, Ll. Balcells, F. F. Putris, and F. T. Parker

Appl. Phys. Lett. 72, 734 (1998); http://dx.doi.org/10.1063/1.120859 (3 pages) | Cited 180 times

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The magnetoresistance behavior of Fe3O4 in polycrystalline thin film, powder compact, and single-crystal form are compared. Negative magnetoresistance with peaks at the coercive field, observed in thin films and powder compacts but not in the single crystal, is due to field-induced alignment of the magnetization of contiguous grains. The effect is associated with intergranular transport of spin-polarized electrons. © 1998 American Institute of Physics.
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72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Oscillatory perpendicular magnetic anisotropy and lattice plane spacing in Fe/Au superlattices

K. Takanashi, S. Mitani, K. Himi, and H. Fujimori

Appl. Phys. Lett. 72, 737 (1998); http://dx.doi.org/10.1063/1.120860 (3 pages) | Cited 29 times

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Perpendicular magnetic anisotropy has been investigated for Fe(x ML)/Au(x ML) superlattices (ML: monatomic layer thickness) with x ranging from 1 to 4. The x-ray diffraction analyses indicate the formation of coherent layered structures both for x = integers and nonintegers. However, the perpendicular magnetic anisotropy for x = nonintegers shows different behavior from that for x = integers, and consequently, it oscillates as a function of x with a period of 1 ML. Furthermore, the out-of-plane lattice spacing also oscillates in the same manner. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Bb Fe and its alloys
75.30.Gw Magnetic anisotropy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Anisotropic transport properties of single-crystal (La,Ca)MnOδ thin films

X. T. Zeng and H. K. Wong

Appl. Phys. Lett. 72, 740 (1998); http://dx.doi.org/10.1063/1.120861 (2 pages) | Cited 7 times

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We report on the observation of anisotropic transport properties in La2/3Ca1/3MnOδ that has a nearly cubic perovskite structure. We prepared single-crystal La2/3Ca1/3MnOδ thin films with a-axis orientation. It is found that the resistivity and magnetoresistance of the samples annealed in oxygen at 920 °C for 1 h are higher along the c-axis direction than along the a-axis direction by about 34%–37% near the metal–semiconductor transition temperature. Further post-annealing in oxygen at 950 °C for 6 h increased the anisotropy ratio of magnetoresistance to 1.9. This indicates that the anisotropic transport properties result from additional magnetic scattering along the c-axis direction of the films. © 1998 American Institute of Physics.
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73.61.At Metal and metallic alloys
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.60.+g Mixed conductivity and conductivity transitions
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Schottky barrier photodetectors based on AlGaN

A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov, and H. Temkin

Appl. Phys. Lett. 72, 742 (1998); http://dx.doi.org/10.1063/1.120862 (3 pages) | Cited 59 times

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We report solar-blind AlxGa1−xN photovoltaic detectors with cutoff wavelengths as short as 290 nm. Mesa geometry devices of different active areas are fabricated and characterized for spectral responsitivity, speed, and noise performance. The responsivity of the devices near the cutoff wavelength is 0.07 A/W. The detector noise is found to be 1/f limited, with a noise equivalent power of 6.6×10−9 W over the total response bandwidth of 100 kHz. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
72.70.+m Noise processes and phenomena

Millimeter-wave phase conjugation using artificial nonlinear surfaces

Yian Chang, Harold R. Fetterman, Irwin L. Newberg, and Steve K. Panaretos

Appl. Phys. Lett. 72, 745 (1998); http://dx.doi.org/10.1063/1.120863 (3 pages) | Cited 5 times

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An artificial nonlinear surface has been developed using antenna-coupled mixers with optical interconnects for microwave and millimeter-wave phase conjugation. Prototype one-dimensional arrays have been constructed and have been used to demonstrate two-dimensional free-space phase conjugation at 10.24 GHz. The phase conjugation properties have been observed and verified by directly measuring the electric-field distribution of the conjugate wave under various conditions. Furthermore, the experiments have shown amplified conjugate wave power up to ten times of that of the incoming wave. This amplifying ability demonstrates the potential of such surfaces to be used in novel communications applications. © 1998 American Institute of Physics.
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84.40.Ba Antennas: theory, components and accessories
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Ds Interconnects, including holographic interconnects
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
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