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16 Feb 1998

Volume 72, Issue 7, pp. 753-867

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Frequency upconversion in Er3+/Yb3+-codoped chalcogenide glass

A. S. Oliveira, M. T. de Araujo, A. S. Gouveia-Neto, J. A. Medeiros Neto, A. S. B. Sombra, and Y. Messaddeq

Appl. Phys. Lett. 72, 753 (1998); http://dx.doi.org/10.1063/1.120884 (3 pages) | Cited 62 times

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Frequency upconversion of cw infrared radiation at 1.06 μm into the visible in Er3+/Yb3+-codoped Ga2S3:La2O3 chalcogenide glass samples is presented. Intense green and red emission bands around 530, 555, and 670 nm, respectively, are observed in addition to near-infrared 830 and 925 nm less intense signals. Energy transfer processes and nonradiative phonon-assisted decays account for the population of the 2H11/2, 4S3/2, and 4F9/2 emitting levels. The dependence of the red emission with the Yb3+ concentration is also analyzed. The potential application of the Er/Yb-codoped Ga2S3:La2O3 glass for upconversion based optical devices is discussed. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
78.55.Hx Other solid inorganic materials

Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices

Hany Aziz, Zoran Popovic, Shuang Xie, Ah-Mee Hor, Nan-Xing Hu, Carl Tripp, and Gu Xu

Appl. Phys. Lett. 72, 756 (1998); http://dx.doi.org/10.1063/1.120867 (3 pages) | Cited 108 times

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We report electroluminescence degradation studies of tris (8-hydroxyquinoline) aluminum (Alq3) organic light-emitting devices (OLEDs) under ambient conditions. Alq3 films and organic bilayer anode/naphthyl-substituted benzidine derivative/Alq3/cathode devices are studied via electroluminescence, photoluminescence, polarization microscopy and atomic force microscopy, and via microscopic infrared spectroscopy. Results reveal that humidity induces the formation of crystalline Alq3 structures in originally amorphous films. The same phenomenon is found to occur in OLEDs and causes cathode delamination at the Alq3/cathode interface that results in the formation of black (nonemissive) spots in the devices. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
68.55.-a Thin film structure and morphology
85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
64.70.K- Solid-solid transitions

Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

E. Lugagne Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz

Appl. Phys. Lett. 72, 759 (1998); http://dx.doi.org/10.1063/1.120885 (3 pages) | Cited 44 times

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We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. We find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering the excitonic absorption properties, making efficient fast saturable absorbers in the 1.3–1.5 μm wavelength range. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Optical poling and its application in optical storage of a polyimide film with high glass transition temperature

Jinhai Si, Tsuneo Mitsuyu, Peixian Ye, Yequan Shen, and Kazuyuki Hirao

Appl. Phys. Lett. 72, 762 (1998); http://dx.doi.org/10.1063/1.120886 (3 pages) | Cited 11 times

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The temperature dependence of optical poling of a side-chain azobenzene–polyimide film with high glass transition temperature was experimentally investigated. With the increase of the sample temperature the light-induced second-harmonic generation increased first, and then decreased as the temperature was near its glass transition temperature. The light-induced second-order nonlinear optical coefficient d33 for the optimum temperature was determined to be 6.9 pm/V, which was about 2.7 times that obtained at room temperature. Compared with optical poling at room temperature, this thermal-assisted optical poling not only enhanced d33 of the polyimide film, but also improved the polar order stability of molecules. Optical storage based on optical poling was also demonstrated experimentally. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
77.22.Ej Polarization and depolarization
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
78.66.Qn Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
42.79.Vb Optical storage systems, optical disks
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters

Grey scale memory in an optically addressed spatial light modulator with a Lu(Pc)2 doped layer

M. Guéna, Z. Y. Wu, M. L’Her, A. Pondaven, and C. Cadiou

Appl. Phys. Lett. 72, 765 (1998); http://dx.doi.org/10.1063/1.120887 (3 pages) | Cited 4 times

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An optically addressed spatial light modulator with electrolyte bisphtalocyanine of lutetium incorporated in the alignment layer is shown to be capable of memorizing a grey scale image. The relationship between the memorized grey scale and the illumination is shown. The temperature, the concentration of Lu(Pc)2 and the spontaneous polarization of liquid crystals are found to have the effect on the memorization rate. © 1998 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Vb Optical storage systems, optical disks
42.70.Ln Holographic recording materials; optical storage media
42.79.Kr Display devices, liquid-crystal devices
42.70.Jk Polymers and organics

Probing quantum nanostructures with near-field optical microscopy and vice versa

Garnett W. Bryant

Appl. Phys. Lett. 72, 768 (1998); http://dx.doi.org/10.1063/1.120868 (3 pages) | Cited 29 times

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A theory for using near-field optical microscopy to probe quantum nanostructures is presented. Optical transition rates are determined for dots excited by the near field of a tip. Local-field corrections are neglected. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron–hole pair wave functions. Conversely, dot response can be used to characterize tip near fields.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.66.-w Optical properties of specific thin films

Accurate measurement of phase shift in electron holography

X. F. Duan, M. Gao, and L.-M. Peng

Appl. Phys. Lett. 72, 771 (1998); http://dx.doi.org/10.1063/1.120888 (3 pages) | Cited 2 times

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A method is proposed for the accurate measurement of phase shift in electron holography. The method is based on the use of moiré fringes resulting from the subtraction of a null electron hologram by a real object hologram recorded under slightly different experimental conditions. This method does not require any optical or digital reconstruction of the electron hologram, and is shown to be highly sensitive to the phase shift of the electron wave passing through an object. Using experimental results obtained from a single particle of silicon, we demonstrate that the sensitivity of this method to phase shift may easily be amplified by more than 11 times compared with the conventional method using an ordinary electron hologram. © 1998 American Institute of Physics.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
41.85.-p Beam optics
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Acoustic waves generated by a line source in a viscoelastic anisotropic medium

B. Audoin and S. Guilbaud

Appl. Phys. Lett. 72, 774 (1998); http://dx.doi.org/10.1063/1.120889 (3 pages) | Cited 5 times

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The acoustic signature provided by laser-generated ultrasound in polymer matrix composites is difficult to interpret on account of the dispersive nature of these materials. In order to simulate such wave forms, a double numerical inverse transform is used to calculate the surface displacement generated by a line impact. This calculation method is preferred due to the frequency dependence connected with the viscoelastic rheology. The focusing effects that anisotropy gives rise to are represented. In addition, the spreading of the signals issued from absorption is correlated with the anisotropic changes of the slowness versus frequency. The predicted displacements are in good agreement with the result of experiments performed with a composite plate. © 1998 American Institute of Physics.
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62.65.+k Acoustical properties of solids
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.60.Pt Signal processing techniques for acoustic inverse problems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
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A traveling wave-driven, inductively coupled large area plasma source

Yaoxi Wu and M. A. Lieberman

Appl. Phys. Lett. 72, 777 (1998); http://dx.doi.org/10.1063/1.120890 (3 pages) | Cited 41 times

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Measurements are reported on an inductively coupled large-area (71×61 cm2) plasma source driven by a 13.56 MHz traveling wave. Launching a traveling wave eliminates standing wave effects to obtain a uniformly excited processing plasma. The driving coil consists of a series connection of eight parallel rods, embedded in the plasma inside thin quartz tubes for efficient power delivery. The network required to launch a traveling wave through the driving coil is described. Our measurements confirm that a radio frequency traveling wave is launched and that a high-density plasma is produced. © 1998 American Institute of Physics.
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52.50.Dg Plasma sources
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
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In situ infrared ellipsometry study of hydrogenated amorphous carbon/Si interface formation

T. Heitz, B. Drévillon, J. E. Bourée, and C. Godet

Appl. Phys. Lett. 72, 780 (1998); http://dx.doi.org/10.1063/1.120891 (3 pages) | Cited 8 times

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The early stages of the growth of plasma-deposited hydrogenated amorphous carbon films on c-Si have been studied by in situ infrared ellipsometry. Different types of polymeric films have been obtained under soft plasma conditions. From the evolution of optical properties, a uniform growth is observed for films having the highest sp2 carbon atom content. In contrast, when the film bulk is a highly saturated polymer, where carbon configurations are mostly sp3, an interlayer of about 20 Å is evidenced, correlated with the formation of sp2 CHn bonds. Moreover, infrared data tend to prove that this interlayer formation is incompatible with the presence of SiC at the interface. © 1998 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.43.Er Other amorphous solids
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Nk Insulators

The physical origin of InAs quantum dots on GaAs(001)

D. J. Bottomley

Appl. Phys. Lett. 72, 783 (1998); http://dx.doi.org/10.1063/1.120892 (3 pages) | Cited 31 times

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We propose that large heteroepitaxial stress causes InAs to melt when deposited on GaAs(001) at approximately 770 K. This leads to mixing with the substrate in order to realize a local minimum in the Gibbs free energy of the liquid phase, producing an approximate liquid composition of In0.8Ga0.2As.The liquid phase facilitates mass transport, leading to quantum dot formation. Dot formation occurs after 2.0 monolayers of liquid material accumulate in order to minimize the surface tension but without reducing the net coordination of the liquid phase atoms. Ge quantum dots on Si(001) are also discussed, and the influence of viscosity effects is inferred. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
65.20.-w Thermal properties of liquids
65.40.gd Entropy
68.03.Cd Surface tension and related phenomena
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.35.Rh Phase transitions and critical phenomena
64.70.D- Solid-liquid transitions
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Improvement of dielectric properties of (Ba,Sr)TiO3 thin films deposited by pulse injection chemical vapor deposition

Ho Jin Cho and Hyeong Joon Kim

Appl. Phys. Lett. 72, 786 (1998); http://dx.doi.org/10.1063/1.120893 (3 pages) | Cited 15 times

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(Ba,Sr)TiO3 (BST) thin films were prepared on Pt/SiO2/Si substrates by the pulse injection chemical vapor deposition (CVD) process, in which the vapor of precursors was allowed to flow periodically into the reaction chamber. The dielectric constants of BST thin films, which were deposited by pulse injection CVD, were slightly higher than those of continuous BST thin films. In addition, the leakage currents were lowered by an order of magnitude. 35 nm thick BST thin films, deposited by pulse injection CVD and postannealed at 600 °C under O2 atmosphere for 30 min, showed a SiO2 equivalent thickness of 0.64 nm, a dielectric dissipation factor less than 0.5%, and a leakage current density of 1×10−7 A/cm2 at +1.5 V bias. The improvement in the electrical properties of pulse BST thin films seems to originate from better crystallinity and less carbon contamination during the pulse deposition process.© 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.80.-e Ferroelectricity and antiferroelectricity

Size reduction of gold particles in aqueous solution by pulsed laser irradiation

Hideaki Kurita, Akinori Takami, and Seiichiro Koda

Appl. Phys. Lett. 72, 789 (1998); http://dx.doi.org/10.1063/1.120894 (3 pages) | Cited 85 times

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When the gold particles produced by the chemical reduction of hydrogen chloroaurate solution were irradiated by the second harmonic of a pulsed Nd:Yag laser (532 nm), their diameter was reduced from more than several deca-nm to less than 20 nm. At the same time, the shape of the particles, originally nonspherical, became spherical. This phenomenon was limited to pulsed laser, and is caused by the heating of the particles within the very short time of laser irradiation; the very large absorption cross section of the particles at the plasmon absorption and the thermal insulation of the irradiated particles in water should be responsible. © 1998 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.40.Kc Metals, semimetals, and alloys
82.50.-m Photochemistry
81.05.Bx Metals, semimetals, and alloys
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Single charge carrier type sensing with a parallel strip pseudo-Frisch-grid CdZnTe semiconductor radiation detector

D. S. McGregor, Z. He, H. A. Seifert, D. K. Wehe, and R. A. Rojeski

Appl. Phys. Lett. 72, 792 (1998); http://dx.doi.org/10.1063/1.120895 (3 pages) | Cited 25 times

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An improvement in gamma-ray energy resolution is demonstrated for a room-temperature operated CdZnTe semiconductor detector that incorporates a parallel strip pseudo-Frisch-grid detector design. The device construction allows primarily for the measurement of electron charge carriers and not hole charge carriers. The detector is a three-terminal device that requires signal output to only one preamplifier, and its simplistic design offers an alternative method to single charge carrier type sensing to that of coplanar semiconductor gamma-ray detector designs. © 1998 American Institute of Physics.
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29.40.Wk Solid-state detectors

Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate

T. Sakamoto, H. Kawaura, and T. Baba

Appl. Phys. Lett. 72, 795 (1998); http://dx.doi.org/10.1063/1.120896 (2 pages) | Cited 23 times

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We propose doped-thin-Si-film single-electron transistors (DS-SETs), which are fabricated from a highly doped Si film in a silicon-on-insulator substate by electron-beam lithography with a high-resolution resist (calixarene) and dry etching with CF4 gas. Because the structure can be well controlled, the DS-SET with a 45-nm-diam island shows nearly ideal characteristics of SETs with a charging energy of 1.4 meV. The results demonstrate that single-electron tunneling occurs through a single island without any isolated islands formed in potential fluctuations. We also discuss the discreteness of energy levels in a Si island. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices
85.40.Hp Lithography, masks and pattern transfer
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Cf Surface cleaning, etching, patterning

Transition from edge to vertical cavity operation of tunnel contact AlGaAs–GaAs–InGaAs quantum well heterostructure lasers

J. J. Wierer, P. W. Evans, and N. Holonyak

Appl. Phys. Lett. 72, 797 (1998); http://dx.doi.org/10.1063/1.120869 (3 pages) | Cited 2 times

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AlxGa1−xAs–GaAs–InyGa1−yAs quantum well heterostructure lasers with thin sharply defined cavities that operate longitudinally or vertically are demonstrated. Longitudinally, the cavity is defined by cleaving (edge emission) while vertical definition is provided by a lower AlxOy/GaAs distributed Bragg reflector (DBR) and an upper SiO2/Si DBR that form a resonant structure. A reverse-biased tunnel contact junction provides lateral electron current to support hole injection through a native-oxide-defined aperture. This ultrathin cavity configuration produces low threshold high efficiency (η ∼ 91%, L = 140 μm) edge emission (longitudinal operation) in the case of long lasers (L≳90 μm), and vertical emission for shorter lasers (L≲65 μm). The transition from longitudinal to vertical laser operation as a function of cavity length, L, is demonstrated. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor deposition

S. Ishida, Y. Arakawa, and K. Wada

Appl. Phys. Lett. 72, 800 (1998); http://dx.doi.org/10.1063/1.120897 (3 pages) | Cited 9 times

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We propose and demonstrate a seeded self-assembling growth technique for the fabrication of quantum dot structures by metal–organic chemical-vapor deposition. GaAs quantum dots were grown at the bottom of two-dimensional V-groove (2DVG) structures, which were composed of (111)A and (111)B facets on a GaAs(100) substrate. The 2DVG was grown by selective growth on a SiO2 patterned substrate. It was found that vertical GaAs quantum wires were also simultaneously formed in the 2DVGs. Using this technique, the stacking of GaAs quantum dots was realized. Photoluminescence and cathodoluminescence from each structure evidenced the formation of both the quantum wires and the quantum dots. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Cr III-V semiconductors

Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon

Hansuk Kim, J. Greg Couillard, and Dieter G. Ast

Appl. Phys. Lett. 72, 803 (1998); http://dx.doi.org/10.1063/1.120898 (3 pages) | Cited 27 times

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Self-aligned, n-channel, polycrystalline silicon thin-film transistors with 15 μm channels were fabricated by recrystallizing amorphous silicon for 6 h at 500 °C. A thin nickel silicide at the source and drain was used to seed the crystallization. The channel mobility was initially 87 cm2/V s, and improved to 170 cm2/V s after hydrogenating the devices. The recrystallization velocity in the channel was measured optically and electrically, and found to be 3.5×10−8 cm/s; this value exceeds by two orders of magnitude the solid-phase epitaxial regrowth rate of amorphous silicon. This observation, together with the low activation energy of 0.3 eV measured for the silicide-assisted regrowth velocity as compared to 2.76 eV for epitaxial regrowth, suggest that the channel recrystallization is assisted by Ni diffusing to the recrystallization front. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Np Solid phase epitaxy; growth from solid phases
81.05.Cy Elemental semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Bohm trajectories for the Monte Carlo simulation of quantum-based devices

X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos, and D. Pardo

Appl. Phys. Lett. 72, 806 (1998); http://dx.doi.org/10.1063/1.120899 (3 pages) | Cited 9 times

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A generalization of the classical ensemble Monte Carlo (MC) device simulation technique is proposed to simultaneously deal with quantum-mechanical phase-coherence effects and scattering interactions in quantum-based devices. The proposed method restricts the quantum treatment of transport to the regions of the device where the potential profile significantly changes in distances of the order of the de Broglie wavelength of the carriers (the quantum window). Bohm trajectories associated to time-dependent Gaussian wave packets are used to simulate the electron transport in the quantum window. Outside this window, the classical ensemble MC simulation technique is used. Classical and quantum trajectories are smoothly matched at the boundaries of the quantum window according to a criterium of total-energy conservation. A self-consistent one-dimensional simulator for resonant tunneling diodes has been developed to demonstrate the feasibility of our proposal. © 1998 American Institute of Physics.
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85.35.Ds Quantum interference devices
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
02.50.Ng Distribution theory and Monte Carlo studies
02.70.Rr General statistical methods

On the environment of optically active Er in Si-electroluminescence devices

S. Lanzerstorfer, L. Palmetshofer, W. Jantsch, and J. Stimmer

Appl. Phys. Lett. 72, 809 (1998); http://dx.doi.org/10.1063/1.120900 (3 pages) | Cited 18 times

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We report sharp, atomlike electroluminescence spectra close to 1.54 μm from a low-dose (3.5×1018 cm−3) erbium-implanted silicon light-emitting diode operating under forward bias. The well-resolved Stark splitting identifies the isolated interstitial Er with cubic site symmetry as the source. The full width at half maximum of the most intense line is 0.5 nm. A comparison with a highly Er (5×1019 cm−3) and O (1×1020 cm−3) doped diode with a high doping gradient grown by molecular beam epitaxy and with Er-implanted silica is given with respect to fine structure and thermal quenching. The room-temperature emission of the highly Er and O doped diode is ascribed to Er containing silica precipitates within the c-Si matrix. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction

Hao Lee, Roger Lowe-Webb, Weidong Yang, and Peter C. Sercel

Appl. Phys. Lett. 72, 812 (1998); http://dx.doi.org/10.1063/1.120901 (3 pages) | Cited 90 times

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We report a reflection high energy electron diffraction study of InAs self-organized quantum dots grown on GaAs (001). We observe facet reflections along the [3math0] and [1math0] azimuths, which indicate that the quantum dot shape is pyramidal with bounding facets corresponding to a family of four {136} planes. The determined structure, which possesses C2v symmetry, is quite different both from square-base pyramidal geometries which have been assumed in recent electronic structure calculations, and from previously proposed structures which have been based upon incomplete reflection high energy electron diffraction data. © 1998 American Institute of Physics.
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68.35.Ct Interface structure and roughness
73.61.Ey III-V semiconductors
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

M. Hammar, E. Rodríguez Messmer, M. Luzuy, S. Anand, S. Lourdudoss, and G. Landgren

Appl. Phys. Lett. 72, 815 (1998); http://dx.doi.org/10.1063/1.120902 (3 pages) | Cited 10 times

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We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
72.80.Ey III-V and II-VI semiconductors
61.72.uj III-V and II-VI semiconductors

A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

Pablo O. Vaccaro, Hajime Ohnishi, and Kazuhisa Fujita

Appl. Phys. Lett. 72, 818 (1998); http://dx.doi.org/10.1063/1.120903 (3 pages) | Cited 12 times

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A lateral p–n junction allows direct injection of electrons and holes in the active layer of devices such as laser diodes and can reduce carrier relaxation time and increase modulation bandwidth. Light-emitting diodes were made on patterned GaAs (311)A-oriented substrates by using a lateral p–n junction formed in GaAs–silicon-doped epilayers grown by molecular beam epitaxy. Good electroluminescence at room temperature was obtained for both GaAs single layers and GaAs/AlGaAs multiple quantum well structures. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Stimulated emission from localized states in partially ordered (AlxGa1−x)0.52In0.48P

U. Dörr, H. Kalt, D. J. Mowbray, and C. C. Button

Appl. Phys. Lett. 72, 821 (1998); http://dx.doi.org/10.1063/1.120904 (3 pages) | Cited 5 times

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We have investigated the optical properties of metalorganic vapor phase epitaxy grown (Al0.5Ga0.5)0.52In0.48P samples with different degrees of CuPtB-type ordering. With increasing excitation intensity, the photoluminescence (PL) exhibits a blueshift (moving emission) which is typical for ordered material. At high excitation intensities, this blueshift is shown to result from filling of localized tail states. Further evidence for the existence of an exponential tail of localized states is provided by the form of the PL line shape for high, quasistationary excitation and by the carrier hopping relaxation demonstrated by time-resolved PL. Applying the variable stripe-length method, we have determined the spectra of the optical gain. Stimulated emission is shown to occur from localized states. © 1998 American Institute of Physics.
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78.45.+h Stimulated emission
71.55.Jv Disordered structures; amorphous and glassy solids
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy

T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma

Appl. Phys. Lett. 72, 824 (1998); http://dx.doi.org/10.1063/1.120905 (3 pages) | Cited 79 times

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We have identified the surface polar structure of wurtzite-type ZnO films by coaxial impact-collision ion scattering spectroscopy. High-quality ZnO epitaxial films were prepared on sapphire (α-Al2O3) (0001) substrates by laser molecular beam epitaxy using a ZnO ceramic target. The (0001) crystallographic plane (the O face) was found to terminate the top surface of the ZnO film by comparing spectra of the films with those of well-defined (0001) and (0001) surfaces of bulk single crystals. The preferential [0001] growth direction of ZnO films is discussed from the viewpoints of the chemical interaction at the interface and surface stability against sublimation. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
64.70.Hz Solid-vapor transitions
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