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16 Feb 1998

Volume 72, Issue 7, pp. 753-867

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Frequency upconversion in Er3+/Yb3+-codoped chalcogenide glass

A. S. Oliveira, M. T. de Araujo, A. S. Gouveia-Neto, J. A. Medeiros Neto, A. S. B. Sombra, and Y. Messaddeq

Appl. Phys. Lett. 72, 753 (1998); http://dx.doi.org/10.1063/1.120884 (3 pages) | Cited 62 times

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Frequency upconversion of cw infrared radiation at 1.06 μm into the visible in Er3+/Yb3+-codoped Ga2S3:La2O3 chalcogenide glass samples is presented. Intense green and red emission bands around 530, 555, and 670 nm, respectively, are observed in addition to near-infrared 830 and 925 nm less intense signals. Energy transfer processes and nonradiative phonon-assisted decays account for the population of the 2H11/2, 4S3/2, and 4F9/2 emitting levels. The dependence of the red emission with the Yb3+ concentration is also analyzed. The potential application of the Er/Yb-codoped Ga2S3:La2O3 glass for upconversion based optical devices is discussed. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
78.55.Hx Other solid inorganic materials

Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices

Hany Aziz, Zoran Popovic, Shuang Xie, Ah-Mee Hor, Nan-Xing Hu, Carl Tripp, and Gu Xu

Appl. Phys. Lett. 72, 756 (1998); http://dx.doi.org/10.1063/1.120867 (3 pages) | Cited 108 times

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We report electroluminescence degradation studies of tris (8-hydroxyquinoline) aluminum (Alq3) organic light-emitting devices (OLEDs) under ambient conditions. Alq3 films and organic bilayer anode/naphthyl-substituted benzidine derivative/Alq3/cathode devices are studied via electroluminescence, photoluminescence, polarization microscopy and atomic force microscopy, and via microscopic infrared spectroscopy. Results reveal that humidity induces the formation of crystalline Alq3 structures in originally amorphous films. The same phenomenon is found to occur in OLEDs and causes cathode delamination at the Alq3/cathode interface that results in the formation of black (nonemissive) spots in the devices. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
68.55.-a Thin film structure and morphology
85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
64.70.K- Solid-solid transitions

Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

E. Lugagne Delpon, J. L. Oudar, N. Bouché, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz

Appl. Phys. Lett. 72, 759 (1998); http://dx.doi.org/10.1063/1.120885 (3 pages) | Cited 44 times

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We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. We find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering the excitonic absorption properties, making efficient fast saturable absorbers in the 1.3–1.5 μm wavelength range. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Optical poling and its application in optical storage of a polyimide film with high glass transition temperature

Jinhai Si, Tsuneo Mitsuyu, Peixian Ye, Yequan Shen, and Kazuyuki Hirao

Appl. Phys. Lett. 72, 762 (1998); http://dx.doi.org/10.1063/1.120886 (3 pages) | Cited 11 times

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The temperature dependence of optical poling of a side-chain azobenzene–polyimide film with high glass transition temperature was experimentally investigated. With the increase of the sample temperature the light-induced second-harmonic generation increased first, and then decreased as the temperature was near its glass transition temperature. The light-induced second-order nonlinear optical coefficient d33 for the optimum temperature was determined to be 6.9 pm/V, which was about 2.7 times that obtained at room temperature. Compared with optical poling at room temperature, this thermal-assisted optical poling not only enhanced d33 of the polyimide film, but also improved the polar order stability of molecules. Optical storage based on optical poling was also demonstrated experimentally. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
77.22.Ej Polarization and depolarization
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
78.66.Qn Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
42.79.Vb Optical storage systems, optical disks
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters

Grey scale memory in an optically addressed spatial light modulator with a Lu(Pc)2 doped layer

M. Guéna, Z. Y. Wu, M. L’Her, A. Pondaven, and C. Cadiou

Appl. Phys. Lett. 72, 765 (1998); http://dx.doi.org/10.1063/1.120887 (3 pages) | Cited 4 times

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An optically addressed spatial light modulator with electrolyte bisphtalocyanine of lutetium incorporated in the alignment layer is shown to be capable of memorizing a grey scale image. The relationship between the memorized grey scale and the illumination is shown. The temperature, the concentration of Lu(Pc)2 and the spontaneous polarization of liquid crystals are found to have the effect on the memorization rate. © 1998 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Vb Optical storage systems, optical disks
42.70.Ln Holographic recording materials; optical storage media
42.79.Kr Display devices, liquid-crystal devices
42.70.Jk Polymers and organics

Probing quantum nanostructures with near-field optical microscopy and vice versa

Garnett W. Bryant

Appl. Phys. Lett. 72, 768 (1998); http://dx.doi.org/10.1063/1.120868 (3 pages) | Cited 29 times

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A theory for using near-field optical microscopy to probe quantum nanostructures is presented. Optical transition rates are determined for dots excited by the near field of a tip. Local-field corrections are neglected. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron–hole pair wave functions. Conversely, dot response can be used to characterize tip near fields.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
78.66.-w Optical properties of specific thin films

Accurate measurement of phase shift in electron holography

X. F. Duan, M. Gao, and L.-M. Peng

Appl. Phys. Lett. 72, 771 (1998); http://dx.doi.org/10.1063/1.120888 (3 pages) | Cited 2 times

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A method is proposed for the accurate measurement of phase shift in electron holography. The method is based on the use of moiré fringes resulting from the subtraction of a null electron hologram by a real object hologram recorded under slightly different experimental conditions. This method does not require any optical or digital reconstruction of the electron hologram, and is shown to be highly sensitive to the phase shift of the electron wave passing through an object. Using experimental results obtained from a single particle of silicon, we demonstrate that the sensitivity of this method to phase shift may easily be amplified by more than 11 times compared with the conventional method using an ordinary electron hologram. © 1998 American Institute of Physics.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
41.85.-p Beam optics
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