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23 Feb 1998

Volume 72, Issue 8, pp. 873-995

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Regular step arrays on silicon

J. Viernow, J.-L. Lin, D. Y. Petrovykh, F. M. Leibsle, F. K. Men, and F. J. Himpsel

Appl. Phys. Lett. 72, 948 (1998); http://dx.doi.org/10.1063/1.120882 (3 pages) | Cited 82 times

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Highly regular arrays of steps are produced on vicinal Si(111)7×7. The step edges are atomically straight for up to 2×104 lattice sites. The terraces are single domain, which produces a minimum kink width of 2.3 nm (half a 7×7 unit cell) and thus a high barrier for creating kinks. Criteria for obtaining optimum step arrays are established, such as the miscut [≈1° towards (112)] and an annealing sequence which passes through step bunching regions quickly. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments

The reaction of carbon tetrachloride with gallium arsenide (001)

L. Li, S. Gan, B.-K. Han, H. Qi, and R. F. Hicks

Appl. Phys. Lett. 72, 951 (1998); http://dx.doi.org/10.1063/1.120620 (3 pages) | Cited 5 times

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Carbon tetrachloride dissociatively adsorbs on the Ga-rich (4×2) reconstruction of GaAs (001) at 200 °C. Upon heating to 440 °C, the chlorine desorbs as GaCl, which etches the surface. Scanning tunneling micrographs reveal that this reaction transforms the (4×2) into a Ga-rich (3×2) structure that is interlaced with As-rich (2×4) phases. The (3×2) is well ordered, while the (2×4) phases exhibit a high degree of disorder. This work establishes the surface reaction pathway for carbon doping of GaAs with CCl4.© 1998 American Institute of Physics.  
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81.65.Cf Surface cleaning, etching, patterning
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
81.05.Ea III-V semiconductors
72.80.Ey III-V and II-VI semiconductors

A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP

B. Junno, T. Junno, M. S. Miller, and L. Samuelson

Appl. Phys. Lett. 72, 954 (1998); http://dx.doi.org/10.1063/1.120883 (3 pages) | Cited 17 times

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We have studied the formation of strained InAs and InP island structures on GaP surfaces grown by chemical beam epitaxy. InP grows pseudomorphically for 3 ML before island crystallization is observed by reflection high-energy electron diffraction, following a typical Stranski–Krastanov growth mode. For the growth of InAs on GaP, three-dimensional diffraction peaks are observed after 0.9 ML of InAs have been deposited, indicating a Volmer–Weber growth mode. Atomic force microscopy studies of these structures are presented and the optical properties are discussed. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Addition energies in semiconductor quantum dots: Role of electron–electron interaction

Massimo Rontani, Fausto Rossi, Franca Manghi, and Elisa Molinari

Appl. Phys. Lett. 72, 957 (1998); http://dx.doi.org/10.1063/1.120933 (3 pages) | Cited 27 times

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We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field can be studied through a theoretical scheme that allows an accurate and practical treatment of the single-particle states and electron–electron interaction up to large numbers of electrons. The calculated addition spectra exhibit the typical structures of Hund-like shell filling, and account for recent experimental findings. A full three-dimensional description of Coulomb interaction is found to be essential for predicting the conductance characteristics of few-electron semiconductor structures. © 1998 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.23.Hk Coulomb blockade; single-electron tunneling
78.20.Ls Magneto-optical effects
78.66.-w Optical properties of specific thin films
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Realization and optical characterization of etched mirror facets in GaN cavities

F. Binet, J. Y. Duboz, N. Laurent, C. Bonnat, P. Collot, F. Hanauer, O. Briot, and R. L. Aulombard

Appl. Phys. Lett. 72, 960 (1998); http://dx.doi.org/10.1063/1.120934 (3 pages) | Cited 15 times

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We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air–GaN interface. This demonstrates the high quality of the etched mirror facets. © 1998 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Ea III-V semiconductors

Efficient all-optical light modulation in a piezoelectric heterostructure at room temperature

V. Ortiz, N. T. Pelekanos, and Guido Mula

Appl. Phys. Lett. 72, 963 (1998); http://dx.doi.org/10.1063/1.120935 (3 pages) | Cited 3 times

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We demonstrate a novel piezoelectric-barrier heterostructure designed for efficient all-optical light modulation. The modulation mechanism relies upon drastic photocarrier separation by the piezoelectric field in the barrier layers. We present room temperature results showing that an optical “control” power of 70 W/cm2 creates in the heart of the structure a space-charge field of about 30 kV/cm, which induces large spectral shifts (≈100 nm) in the photoluminescence spectra of a CdHgTe quantum well in the 1.5 μm range. © 1998 American Institute of Physics.
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78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
77.65.-j Piezoelectricity and electromechanical effects
78.55.Et II-VI semiconductors
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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Hot electron tunable supercurrent

A. F. Morpurgo, T. M. Klapwijk, and B. J. van Wees

Appl. Phys. Lett. 72, 966 (1998); http://dx.doi.org/10.1063/1.120612 (3 pages) | Cited 64 times

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A Josephson junction has been realized in which the supercurrent flow is regulated by a “normal” control current traversing the normal metal in between the superconducting electrodes. The principle of operation of the devices is based on the existing relation between the magnitude of the supercurrent and the electronic distribution function in the junction. This method for controlling the supercurrent has clear advantages over other known methods and is relevant for superconducting electronics applications. © 1998 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects

Radio frequency SQUIDs operating at 77 K with 1 GHz lumped-element tank circuits

D. F. He, X. H. Zeng, H.-J. Krause, H. Soltner, F. Rüders, and Y. Zhang

Appl. Phys. Lett. 72, 969 (1998); http://dx.doi.org/10.1063/1.120611 (3 pages) | Cited 17 times

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We have developed a matching scheme for the operation of a rf superconducting quantum interference device (SQUID) with a lumped-element tank circuit at pumping frequencies up to 1 GHz. This conventional LC resonant circuit is inductively coupled to a matching coil, which is connected to the 50 Ω transmission line. We characterized the flux noise of high-temperature rf SQUIDs at resonant frequencies between 221 and 950 MHz. At about 900 MHz, we obtained the white flux noise of about 14.6 μϕ0/math with a SQUID inductance LS = 150 pH and 20 μϕ0/math with LS = 260 pH. Several of such tank circuits can be driven in parallel or in series with only one cable. © 1998 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.-r Electronic circuits

Orientation control of ex situ (Hg1−xRex)Ba2CaCu2Oy (x ≈ 0.1) thin films on LaAlO3

C. Gasser, Y. Moriwaki, T. Sugano, K. Nakanishi, X.-J. Wu, S. Adachi, and K. Tanabe

Appl. Phys. Lett. 72, 972 (1998); http://dx.doi.org/10.1063/1.120613 (3 pages) | Cited 12 times

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(Hg1−xRex)Ba2CaCu2Oy (x ≈ 0.1) thin films have been prepared ex situ on LaAlO3 substrates by a two-step process in which an HgO/Re0.1Ba2CaCu2Oy multilayer precursor film is annealed in a quartz tube using an unreacted monoxide pellet containing HgO as an Hg vapor source. By varying the composition of the monoxide pellet, the film orientation can be changed from c-axis to the predominantly a-axis one. The a-axis growth of the grains directly on the substrate is confirmed by x-ray diffraction and transmission electron microscopic observation, although the grains are twinned with 90° orientation. The a-axis films exhibit a Tc onset and Tc zero of approximately 110–127 and 55 K, respectively, suggesting substantial influence of weak links at the grain boundaries on their transport properties. © 1998 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.10.+v Occurrence, potential candidates
74.25.Sv Critical currents
81.15.Fg Pulsed laser ablation deposition
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Mapping of the magnetic leakage fields from nanoparticles by Fresnel projection microscopy

Vu Thien Binh, S. T. Purcell, V. Semet, and F. Feschet

Appl. Phys. Lett. 72, 975 (1998); http://dx.doi.org/10.1063/1.120614 (3 pages) | Cited 9 times

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The magnetic leakage fields from the poles of magnetic nanoparticles down to 105–106 spins, isolated or situated at the edges of clusters, are observed with Fresnel projection microscopy by the presence of interference fringes generated by the magnetic phase shifts in the imaging electron beam. The particle shapes and localization of fringes are imaged simultaneously with nanometer spatial resolution at ∼ 200 V. © 1998 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
61.46.-w Structure of nanoscale materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Direct measurement of strain effects on magnetic and electrical properties of epitaxial SrRuO3 thin films

Q. Gan, R. A. Rao, C. B. Eom, J. L. Garrett, and Mark Lee

Appl. Phys. Lett. 72, 978 (1998); http://dx.doi.org/10.1063/1.120603 (3 pages) | Cited 87 times

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By lifting an epitaxial thin film off its growth substrate, we directly and quantitatively demonstrate how elastic strain can alter the magnetic and electrical properties of single-domain epitaxial SrRuO3 thin films (1000 Å thick) on vicinal (001) SrTiO3 substrates. Free-standing films were then obtained by selective chemical etching of the SrTiO3. X-ray diffraction analysis shows that the free-standing films are strain free, whereas the original as-grown films on SrTiO3 substrates are strained due to the lattice mismatch at the growth interface. Relaxation of the lattice strain resulted in a 10 K increase in the Curie temperature to 160 K, and a 20% increase in the saturation magnetic moment to 1.45 μB/Ru atom. Both values for the free-standing films are the same as that of the bulk single crystals. Our results provide direct evidence of the crucial role of the strain effect in determining the properties of the technologically important perovskite epitaxial thin films. © 1998 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.15.Cd Deposition by sputtering
81.65.Cf Surface cleaning, etching, patterning
75.40.-s Critical-point effects, specific heats, short-range order
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.60.Bs Mechanical and acoustical properties
75.80.+q Magnetomechanical effects, magnetostriction
73.50.Dn Low-field transport and mobility; piezoresistance

Growth of single-phase PrBa0.7Sr1.3Cu3O7 thin films and the role of lattice strain on the transport properties

Y. G. Zhao, Z. W. Dong, M. Rajeswari, R. P. Sharma, and T. Venkatesan

Appl. Phys. Lett. 72, 981 (1998); http://dx.doi.org/10.1063/1.120615 (3 pages) | Cited 1 time

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Single-phase PrBa0.7Sr1.3Cu3O7 thin films with the Sr dopant concentration exceeding the solid solubility limit were epitaxially grown on (001) SrTiO3 and (001) LaAlO3 substrates by pulsed laser deposition (PLD) method. The resistivity of the doped films grown on LaAlO3 was significantly lower than that of PrBa2Cu3O7. For most of the films grown on SrTiO3, the resistivity was higher than that of PrBa2Cu3O7. The results were explained by considering the Sr-doping effect and lattice-mismatch-induced strain effect. This work shows the potential of PLD to grow single-phase films with the dopant concentration exceeding the solid solubility limit. © 1998 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
73.50.Dn Low-field transport and mobility; piezoresistance
64.75.-g Phase equilibria
72.20.Fr Low-field transport and mobility; piezoresistance

Extrinsic giant magnetoresistance in chromium (IV) oxide, CrO2

S. Sundar Manoharan, D. Elefant, G. Reiss, and J. B. Goodenough

Appl. Phys. Lett. 72, 984 (1998); http://dx.doi.org/10.1063/1.120616 (3 pages) | Cited 66 times

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Polycrystalline CrO2 is shown to exhibit a giant magnetoresistance (GMR) at low temperatures. A rapid decrease in the GMR with increasing temperature is correlated with a decrease in the intergranular resistance. Single-crystal CrO2 is a half-metallic ferromagnet, as the data are interpreted to reflect two types of charge carriers, crossing a grain boundary: those that tunnel between conduction bands of adjacent grains and those that hop after residing at a localized state for a time long compared to a spin relaxation time. © 1998 American Institute of Physics.
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75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
72.20.My Galvanomagnetic and other magnetotransport effects
61.72.Mm Grain and twin boundaries
72.20.Fr Low-field transport and mobility; piezoresistance
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Stabilization of cubic CrN0.6 in CrN0.6/TiN superlattices

P. Yashar, X. Chu, S. A. Barnett, J. Rechner, Y. Y. Wang, M. S. Wong, and W. D. Sproul

Appl. Phys. Lett. 72, 987 (1998); http://dx.doi.org/10.1063/1.120621 (3 pages) | Cited 28 times

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A transmission electron microscopy study of CrN0.6/TiN superlattices deposited by reactive magnetron sputtering is described. The stable structure of CrN0.60 is hexagonal, but high resolution transmission electron microscopy images of the superlattices showed that CrN0.6 layers ⩽10 nm thick were cubic, while 50 nm thick layers were hexagonal. That is, the cubic CrN structure was “epitaxially stabilized” by the cubic TiN, with which there is a 2.4% lattice mismatch. The superlattices with hexagonal CrN0.6 showed high strains and defect densities within ≈5 nm of each interface, presumably due to the 5.4% volume decrease associated with the cubic-to-hexagonal transformation. The effect of this strain on the transformation is discussed. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
64.70.K- Solid-solid transitions
81.15.Cd Deposition by sputtering

Amino acid synthesis from an amorphous substance composed of carbon, nitrogen, and oxygen

Shin Miyakawa, Hideki Tamura, Akira B. Sawaoka, and Kensei Kobayashi

Appl. Phys. Lett. 72, 990 (1998); http://dx.doi.org/10.1063/1.120617 (3 pages) | Cited 7 times

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Hydrogen cyanide, formaldehyde, and ammonia are considered important intermediates in amino acid synthesis by electric discharge. In this study, however, amino acid precursors were synthesized from a CO–N2 mixture free of hydrogen atoms. An amorphous film composed of carbon, nitrogen, and oxygen was given from a highly activated plasma. When exposed to atmospheric moisture, this film incorporated hydrogen atoms to yield amino acid. This is a mechanism for amino acid synthesis without involving hydrogen cyanide, formaldehyde, and ammonia. © 1998 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
87.80.-y Biophysical techniques (research methods)
87.15.-v Biomolecules: structure and physical properties
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)

Ultralow-temperature atomic force microscopy for the investigation of mesoscopic systems

D. V. Pelekhov, J. B. Becker, and G. Nunes

Appl. Phys. Lett. 72, 993 (1998); http://dx.doi.org/10.1063/1.120618 (3 pages) | Cited 9 times

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We have developed an atomic force microscope for the study of mesoscopic samples. The microscope operates at milliKelvin temperatures and in high magnetic fields. Sample images are presented showing atomic steps at 4.2 K and a mesoscopic ring at 30 mK in a 9 T field. Deflection of the force-sensing cantilever is detected via an optical fiber interferometer operating at very low power levels. The microscope is well suited to surface imaging simultaneous with transport measurements at ultralow temperatures, and to the in situ manipulation of sample properties. © 1998 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
73.23.-b Electronic transport in mesoscopic systems
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
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