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2 Mar 1998

Volume 72, Issue 9, pp. 1001-1123

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Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy

D. Vignaud, X. Wallart, and F. Mollot

Appl. Phys. Lett. 72, 1075 (1998); http://dx.doi.org/10.1063/1.120969 (3 pages) | Cited 5 times

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InAlAs–InP type II heterostructures grown by gas-source molecular beam epitaxy have been studied by photoluminescence. The interface recombination energy is found around 1.27–1.28 eV in the low injection limit and shifts towards higher energy when increasing the incident power. Similar results are obtained for direct (InAlAs grown on InP) and inverse (InP on InAlAs) structures. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Real time control of InxGa1−xN molecular beam epitaxy growth

N. Grandjean and J. Massies

Appl. Phys. Lett. 72, 1078 (1998); http://dx.doi.org/10.1063/1.120970 (3 pages) | Cited 39 times

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The growth of GaN and InxGa1−xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. In situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intensity were observed during both GaN and InxGa1−xN deposition. This allows determining in real time the composition of InxGa1−xN alloys. The effects of the growth temperature and the Ga flux on the In incorporation rate were investigated. The critical thickness for InGaN islanding as a function of In mole fraction is also easily deduced from RHEED experiments. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification

Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature

N. C. Chen, P. Y. Wang, and J. F. Chen

Appl. Phys. Lett. 72, 1081 (1998); http://dx.doi.org/10.1063/1.120971 (3 pages) | Cited 14 times

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The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 °C and annealed at 620 °C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging–discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Two-way switching based on turnstile operation

Kazuhito Tsukagoshi and Kazuo Nakazato

Appl. Phys. Lett. 72, 1084 (1998); http://dx.doi.org/10.1063/1.120972 (2 pages) | Cited 9 times

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Two-way switching based on a turnstile operation was investigated. A clocking modulation carries a turnstile current through an input and one of two output multiple-tunnel junctions (MTJs). By changing side-gate voltages to the output MTJs, the output turnstile current is switched between the two output branches. The switching current consists of electron packets containing as few as 100 electrons. © 1998 American Institute of Physics.
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85.35.Gv Single electron devices
84.32.Dd Connectors, relays, and switches

Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

Aditya Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham

Appl. Phys. Lett. 72, 1086 (1998); http://dx.doi.org/10.1063/1.120945 (3 pages) | Cited 61 times

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We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on which the technique is based. We show that when H and He gas implants are combined they produce a synergistic effect which enables thin-film separation at a much lower total implantation dose than that required for either H or He alone. By varying the H and He implantation doses we have been able to isolate the physical and chemical contributions of the gases to the blistering processes. We find that the essential role of H is to interact chemically with the implantation damage and create H-stabilized platelet-like defects, or microvoids. The efficiency of H in this action is linked to its effective lowering of the silicon internal surface energy. The second key component of the process is physical; it consists of diffusion of gas into the microvoids and gas expansion during annealing, which drives growth and the eventual intersection of the microvoids to form two continuous separable surfaces. He is more efficient than H for this process since He does not become chemically trapped at broken bonds and thus segregates into microvoids more readily. In particular, we have demonstrated that a 1×1016 cm−2 He dose in combination with a 7.5×1015 cm−2 H dose are sufficient to shear and transfer a thin silicon film onto a handle wafer after bonding the two wafers together. © 1998 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Observation of the single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy

Masanori Otobe, Hiroshi Yajima, and Shunri Oda

Appl. Phys. Lett. 72, 1089 (1998); http://dx.doi.org/10.1063/1.120973 (3 pages) | Cited 12 times

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We have measured current–voltage (I–V) characteristics of individual surface oxidized nanocrystalline silicon (nc-Si) particles, which were grown in the gas phase of a plasma and which had well-defined grain sizes of less than 10 nm and a regular octahedron shape. The I–V characteristics were measured at room temperature using atomic force microscopy with conductive tips, which allows the grain size of nc-Si particles to also be measured directly. The measured I–V characteristics show staircaselike features. The period of the staircase increases with decreasing grain size, which is consistent with the single electron charging effect in nc-Si. © 1998 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
72.80.Cw Elemental semiconductors

Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Jung H. Shin, Mun-Jun Kim, Se-young Seo, and Choochon Lee

Appl. Phys. Lett. 72, 1092 (1998); http://dx.doi.org/10.1063/1.120974 (3 pages) | Cited 54 times

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The composition dependence of room temperature 1.54 μm Er3+ photoluminescence of erbium-doped silicon:oxygen thin films produced by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with a Si:O ratio of 1:1.2 after a 900 °C anneal and the formation of silicon nanoclusters embedded in the SiO2 matrix. The high active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to the high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence. © 1998 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors

Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum

K. D. Hobart, M. E. Twigg, F. J. Kub, and C. A. Desmond

Appl. Phys. Lett. 72, 1095 (1998); http://dx.doi.org/10.1063/1.120975 (3 pages) | Cited 14 times

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The electrical characteristics of pn junctions formed by direct bonding of silicon wafers in ultra-high vacuum have been quantified. The bonding process produces low reverse leakage <1 μA/cm2 and near-ideal forward current. The observation of bulk-like bonded interfaces is supported by transmission electron microscopy and infra-red transmission imaging. © 1998 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Cy Elemental semiconductors

Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements

S. L. Lai, J. R. A. Carlsson, and L. H. Allen

Appl. Phys. Lett. 72, 1098 (1998); http://dx.doi.org/10.1063/1.120946 (3 pages) | Cited 49 times

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This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines. © 1998 American Institute of Physics.
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68.60.Wm Other nonelectronic physical properties
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
64.70.D- Solid-liquid transitions
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
81.07.-b Nanoscale materials and structures: fabrication and characterization
85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

The activation of Mg in GaN by annealing with minority-carrier injection

Mamoru Miyachi, Toshiyuki Tanaka, Yoshinori Kimura, and Hiroyuki Ota

Appl. Phys. Lett. 72, 1101 (1998); http://dx.doi.org/10.1063/1.120936 (3 pages) | Cited 32 times

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The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.55.Eq III-V semiconductors

Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes

M. Godlewski, T. Wojtowicz, G. Karczewski, J. Kossut, J. P. Bergman, and B. Monemar

Appl. Phys. Lett. 72, 1104 (1998); http://dx.doi.org/10.1063/1.120937 (3 pages) | Cited 2 times

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Photoluminescence studies of CdTe/CdMnTe heterostructures grown either by the atomic layer epitaxy or by a standard molecular beam epitaxy are presented. Morphology of CdTe/CdMnTe interfaces is compared for heterostructures grown by these two methods. The inter-island exciton migration, reported until recently only for high quality GaAs/AlGaAs structures, is observed in our structures with the quantum well grown by the atomic layer epitaxy. This indicates that relatively large and flat quantum well islands with a width differing by one monolayer exist in these samples. The present study, thus, demonstrates an improved quality of interfaces in structures grown by the atomic layer epitaxy. © 1998 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.20.At Surface states, band structure, electron density of states
81.05.Dz II-VI semiconductors
71.35.Gg Exciton-mediated interactions
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
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Effect of cross-type bias in a two-dimensional array of short Josephson junctions

G. Filatrella, N. F. Pedersen, and K. Wiesenfeld

Appl. Phys. Lett. 72, 1107 (1998); http://dx.doi.org/10.1063/1.120938 (3 pages) | Cited 9 times

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We investigate numerically the effect of cross-type bias on two-dimensional arrays of short Josephson junctions. We have demonstrated that, for the simplest circuit, this type of bias is able to phase lock the junctions yielding a substantial improvement over ordinary biasing schemes. © 1998 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices
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Microstructure and hard magnetic properties of nanocomposite Sm2Fe15Ga2Cx permanent magnets with an excess of Fe prepared directly by melt spinning

Zhao-hua Cheng, Jun-xian Zhang, Hui-qun Guo, J. van Lier, H. Kronmüller, and Bao-gen Shen

Appl. Phys. Lett. 72, 1110 (1998); http://dx.doi.org/10.1063/1.120939 (3 pages) | Cited 13 times

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The nanocomposites Sm–Fe–Ga–C with low Sm contents have been prepared directly by melt spinning without a subsequent heat treatment. A highly isotropic remanence to saturation magnetization ratio of 0.6–0.7 and a relatively high coercivity of 5.5 kOe were achieved from the as-quenched ribbons. X-ray diffraction and thermomagnetic analyses show that the as-quenched ribbons consist of a magnetically hard phase Sm2Fe15Ga2Cx and a magnetically soft phase α-Fe. Transmission electron microscopy observation demonstrates that the major 2:17-type phase has larger crystallites and the crystallites of the minor phase α-Fe are smaller and located separately at the grain boundaries of the major phase. The remanence enhancement is attributed to the exchange coupling between the intergrains. Both microstructure and magnetic properties are found to depend sensitively on the substrate velocity. The effect of the microstructure on hard magnetic properties has been discussed. © 1998 American Institute of Physics.
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75.50.Bb Fe and its alloys
75.50.Ww Permanent magnets
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Vv High coercivity materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.40.Gh Other heat and thermomechanical treatments
72.15.Jf Thermoelectric and thermomagnetic effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
75.30.Cr Saturation moments and magnetic susceptibilities

In-plane grain boundary effects on the magnetotransport properties of La0.7Sr0.3MnO3−δ

J. Y. Gu, S. B. Ogale, M. Rajeswari, T. Venkatesan, R. Ramesh, V. Radmilovic, U. Dahmen, G. Thomas, and T. W. Noh

Appl. Phys. Lett. 72, 1113 (1998); http://dx.doi.org/10.1063/1.120940 (3 pages) | Cited 47 times

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C-axis oriented La0.7Sr0.3MnO3−δ (LSMO) films were fabricated on the top of SrTiO3/YBa2Cu3O7 grown on MgO (001) substrates. From x-ray ϕ-scan and planar transmission electron microscopy measurements, the LSMO layer in the LSMO/SrTiO3/YBa2Cu3O7/MgO heterostructure is found to have coherent in-plane grain boundaries with a predominance of 45° rotations (between [100] and [110] grains) in addition to the cube-on-cube epitaxial relationship. Also, epitaxial LSMO/Bi4Ti3O12/LaAlO3 (001) and c-axis textured LSMO/Bi4Ti3O12/SiO2/Si (001) with random in-plane grain boundaries are introduced as the counterparts for comparison. The resistivity and magnetoresistance (MR) of LSMO layer were measured and compared. The low field MR at low temperature shows a dramatic dependence on the nature of the grain boundary. An attempt is made to interpret these results on the basis of correlation between the magnetic properties and grain structures. © 1998 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
75.47.De Giant magnetoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
61.72.Mm Grain and twin boundaries

Magnetization reversal in submicron magnetic wire studied by using giant magnetoresistance effect

T. Ono, H. Miyajima, K. Shigeto, and T. Shinjo

Appl. Phys. Lett. 72, 1116 (1998); http://dx.doi.org/10.1063/1.120941 (2 pages) | Cited 43 times

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The magnetization reversal phenomenon in a submicron magnetic wire with a trilayer structure consisting of NiFe(200 Å)/Cu(100 Å)/NiFe(50 Å) was investigated by measuring the electric resistance in an external magnetic field. A giant magnetoresistance (GMR) effect of about 0.8% was observed when the magnetizations in two NiFe layers are oriented antiparallel. It is demonstrated that magnetization reversal phenomena can be very sensitively investigated by utilizing the GMR effect. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.De Giant magnetoresistance
73.61.At Metal and metallic alloys

Nanoparticle morphology in a granular Cu–Co alloy with giant magnetoresistance

Wendong Wang, Fengwu Zhu, Jun Weng, Jimei Xiao, and Wuyan Lai

Appl. Phys. Lett. 72, 1118 (1998); http://dx.doi.org/10.1063/1.120942 (3 pages) | Cited 25 times

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The morphology of nanometer-sized cobalt granules in a granular Cu88Co12 alloy was directly determined utilizing an atom probe-field ion microscope. The granules are spherical in shape, and exhibit a size distribution. Giant magnetoresistance (GMR) was observed in alloys with an average granule size ranging from 1.5 to 6 nm in diameter. A well-known theoretical model of general GMR behavior in magnetic granular systems was confirmed based on measurement of size distribution of the granules. © 1998 American Institute of Physics.
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75.50.Cc Other ferromagnetic metals and alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.47.De Giant magnetoresistance
61.46.-w Structure of nanoscale materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
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Unconventional hysteresis behavior in compositionally graded Pb(Zr,Ti)O3 thin films

Mark Brazier, M. McElfresh, and Said Mansour

Appl. Phys. Lett. 72, 1121 (1998); http://dx.doi.org/10.1063/1.120943 (3 pages) | Cited 65 times

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Thin-film lead–zirconate–titanate (PZT) capacitors with composition gradients normal to the substrate were fabricated via a novel technique using pulsed laser deposition. These capacitors exhibited large polarization offsets when driven by an alternating electric field. The direction of the offsets depended on the direction of the gradient with respect to the substrate. The largest offset, greater than 400 μC/cm2 when driven with a 50 V/μm field, was nearly an order of magnitude greater than any reported for other graded ferroelectric films. This difference is attributed to both the high spontaneous polarization of PZT and the high-quality films obtained by pulsed laser deposition. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
81.15.Fg Pulsed laser ablation deposition
85.40.Sz Deposition technology
77.22.Ej Polarization and depolarization
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