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2 Mar 1998

Volume 72, Issue 9, pp. 1001-1123

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Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

C. L. Chua, R. L. Thornton, D. W. Treat, M. Kneissl, and C. Dunnrowicz

Appl. Phys. Lett. 72, 1001 (1998); http://dx.doi.org/10.1063/1.120947 (3 pages) | Cited 3 times

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We present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium–tin–oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 μA. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes

D. Korakakis, K. F. Ludwig, and T. D. Moustakas

Appl. Phys. Lett. 72, 1004 (1998); http://dx.doi.org/10.1063/1.120976 (3 pages) | Cited 10 times

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GaN/Al0.20Ga0.80N (50 Å/50 Å) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the bottom contact layer and n-Al0.25Ga0.75N as the corresponding cladding layer. The crystal structure of this system was investigated by studying the reciprocal lattice map of off-axis diffraction peaks as well as the θ–2θ pattern around the (0002) reflection. The MQW was found to be coherent and has the a-lattice parameter of the underlying Al0.25Ga0.75N. The good agreement between experimental and theoretical data in the relative intensity of up to third-order satellite peaks supports that the interfaces of the MQW are abrupt, and thus, interdiffusion of Ga and Al atoms at the growth temperature was negligible. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Efficient frequency doubling of 1.5 μm femtosecond laser pulses in quasi-phase-matched optical fibers

V. Pruneri, G. Bonfrate, P. G. Kazansky, C. Simonneau, P. Vidakovic, and J. A. Levenson

Appl. Phys. Lett. 72, 1007 (1998); http://dx.doi.org/10.1063/1.120948 (3 pages) | Cited 7 times

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Second-order nonlinear gratings in optical fibers have been produced for efficient quasi-phase-matched frequency conversion around 1.5 μm. Periodic poling was achieved by defining a patterned electrode on a D-shape fiber via standard lithography and applying high voltage (4–5 kV) at elevated temperature (270–280 °C). This fabrication technique has allowed us to produce gratings uniform over 7.5 cm, as indicated by the shape and the bandwidth of the phase-matching curve. By frequency doubling ∼100 fs pulses in a grating ∼4 cm long and with a period of 57.15 μm, ∼1.05 mW average power at 768 nm has been generated, with an average conversion efficiency ∼1.2%. © 1998 American Institute of Physics.
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42.81.Bm Fabrication, cladding, and splicing
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Dj Gratings

Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance

Der-Feng Guo

Appl. Phys. Lett. 72, 1010 (1998); http://dx.doi.org/10.1063/1.120949 (3 pages) | Cited 3 times

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A heterostructure optoelectronic switch, grown by molecular beam epitaxy, has been fabricated. Owing to the carrier confinement and avalanche multiplication in the transport mechanism, S-shaped negative-differential-resistance performances are observed in the current–voltage (I–V) characteristics. The device shows a flexible optical function related to the potential barrier height and breakdown voltage controllable by incident light. The dependence of the I–V characteristics on illumination is attributed to the carrier confinement effect in the device operation. © 1998 American Institute of Physics.
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85.60.-q Optoelectronic devices
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors

Tayloring of the optical properties by symmetry modification of substituted quaterthiophene single crystals

G. Gigli, R. Rinaldi, M. Lomascolo, R. Cingolani, G. Barbarella, and M. Zambianchi

Appl. Phys. Lett. 72, 1013 (1998); http://dx.doi.org/10.1063/1.120950 (2 pages) | Cited 8 times

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We report an optical study of polymorphic single crystals of a polysubstituted α-conjugated quaterthiophene. The crystals exhibit two crystalline symmetries (monoclinic and triclinic) with different energy gaps and lifetimes of the elementary excitations. Their optical properties are correlated to the molecular structure, showing that the functionalization process determines an intrinsic tuning of the crystal properties. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
61.41.+e Polymers, elastomers, and plastics
71.23.-k Electronic structure of disordered solids
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling

On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islands

C. A. C. Mendonça, E. Laureto, M. J. S. P. Brasil, M. A. Cotta, M. M. G. Carvalho, and E. A. Meneses

Appl. Phys. Lett. 72, 1015 (1998); http://dx.doi.org/10.1063/1.120951 (3 pages) | Cited 5 times

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We investigate the effects of the interface morphology on the electronic properties of InAs/In systems using in-air atomic force microscopy and low temperature photoluminescence. Atomic force microscopy results show that the distribution of InAs strained film into three-dimensional islands and the two-dimensional wetting layer—typical of the Stranski–Krastanov growth mode—is strongly affected by the characteristics of the substrate and by the morphology of the InP buffer layer. The differences in the optical data are correlated to the different interface characteristics observed by atomic force microscopy. We discuss the origin of emission peaks taking into account the diffusion process of adsorbed atoms on the different types of surface. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.35.Ct Interface structure and roughness
73.61.Ey III-V semiconductors

Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene

M. Nagel, C. Meyer, H.-M. Heiliger, T. Dekorsy, H. Kurz, R. Hey, and K. Ploog

Appl. Phys. Lett. 72, 1018 (1998); http://dx.doi.org/10.1063/1.120952 (3 pages) | Cited 12 times

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We report the application of electric field-induced second-harmonic (EFISH) generation for time-resolved measurement of ultra-fast electrical pulses propagating on thin-film microstrip lines fabricated with a polymer based on benzocyclobutene as a dielectric layer on a silicon substrate. This contactless field detection enables the characterization of electric pulses on the transmission line up to 1.95 THz. In comparison to external electro-optic sampling the EFISH technique provides a better characterization tool concerning time-resolution and noninvasiveness. © 1998 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
84.40.Az Waveguides, transmission lines, striplines
78.47.-p Spectroscopy of solid state dynamics

Large near-resonance third-order nonlinearity in an azobenzene-functionalized polymer film

R. Rangel-Rojo, S. Yamada, H. Matsuda, and D. Yankelevich

Appl. Phys. Lett. 72, 1021 (1998); http://dx.doi.org/10.1063/1.120977 (3 pages) | Cited 32 times

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The third-order nonlinear optical response of a thin film containing the azobenzene dye Disperse Red 1 was studied using the z-scan technique with tunable picosecond pulses. A nonlinear refractive index of −5.0 cm2/GW, corresponding to a Re χ(3) = −3.0×10−15 m2/V2 (2.1×10−7 esu), has been measured at 570 nm. The observed nonlinearity is attributed to the change in refractive index induced by the trans-cis transition in the dye molecule. © 1998 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
78.66.Qn Polymers; organic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics
78.47.-p Spectroscopy of solid state dynamics

All-optical wavelength switching in a semiconductor laser using self-seeding and external injection-seeding

S. P. Yam and C. Shu

Appl. Phys. Lett. 72, 1024 (1998); http://dx.doi.org/10.1063/1.120953 (3 pages) | Cited 2 times

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We developed an approach for efficient optical switching by employing the mechanism of gain competition between two different wavelengths. The lasing wavelengths are obtained by self-seeding and external injection-seeding of the same gain-switched Fabry–Pérot laser diode. A direct comparison shows that the latter yields a faster switching response owing to the injection of continuous oscillations. Optical switching has been demonstrated over a 20 nm tuning range with an injection power as small as 10 μW. An operating bandwidth in the tens of MHz frequency range can be expected using the switching scheme. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Optical absorption of composites of nanocrystalline silver prepared by electrodeposition

S. Banerjee and D. Chakravorty

Appl. Phys. Lett. 72, 1027 (1998); http://dx.doi.org/10.1063/1.120954 (3 pages) | Cited 18 times

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Silver particles of average diameters in the range 10.3–25.7 nm have been grown within a gel medium by an electrodeposition technique. Detailed optical absorption characteristics in the wavelength range 250–600 nm have been investigated for nanocomposites comprising these particles dispersed in a polystyrene matrix. Absorption maximum occurs at a wavelength around 350 nm, which increases as the metal particle size is increased. Mie theory with the incorporation of a distribution of particle size gives remarkable agreement with the experimental data. The electrical conductivity as extracted from the theoretical analysis for particles with diameters ∼ 3 nm is found to be less than Mott’s minimum metallic conductivity. This indicates the possibility of a metal insulator transition in this system, which appears to be consistent with earlier electrical conductivity measurements. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
78.40.Kc Metals, semimetals, and alloys
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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