APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Mar 1998

Volume 72, Issue 9, pp. 1001-1123

Return to All Sections
back to top
RSS Feeds

Accurate extraction of the diffusion current in silicon p-n junction diodes

E. Simoen, C. Claeys, A. Czerwinski, and J. Katcki

Appl. Phys. Lett. 72, 1054 (1998); http://dx.doi.org/10.1063/1.120962 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An accurate method for the extraction of the reverse diffusion current component in a silicon p-n junction diode is proposed. It combines capacitance–voltage and current–voltage measurements on an array of diodes with different geometry in order to separate the peripheral and the volume leakage current components. The corrected volume capacitance is then used to calculate the depletion width as a function of the reverse bias. Extrapolation of the reverse current to zero depletion width results in the diffusion current part, both for the volume and for the peripheral component. From the temperature dependence, a thermal activation energy of 1.12 eV is obtained. The volume diffusion current density of the p-type Czochralski wafers studied, shows a pronounced substrate dependence, while the peripheral diffusion current density is constant. Finally, the implications for the extraction of the effective bulk recombination lifetime are discussed. © 1998 American Institute of Physics.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Kk Junction diodes

An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements

L. Jiao, I. Chen, R. W. Collins, C. R. Wronski, and N. Hata

Appl. Phys. Lett. 72, 1057 (1998); http://dx.doi.org/10.1063/1.120963 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The uncertainties inherent in the normalization of subgap photoconductivity spectra to the optical absorption spectra α(hv) in a-Si:H based films have been addressed. An analysis is presented which is based on optical transitions of constant dipole matrix element between parabolic distributions of extended states and exponential distributions of localized tail states. This analysis has been used to normalize the two sets of results accurately, as verified by photothermal deflection spectroscopy measurements, and is shown to be useful in the commonly encountered cases, in which the two spectra do not overlap over an extended region. Improved quantitative fits of α(hv), for photon energy from ∼ 1.5 to 2.4 eV, obtained on different a-Si:H based films indicate that the localized exponential band tail regions extend ∼ 60–70 meV above the optical gap. © 1998 American Institute of Physics.
Show PACS
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.61.Jc Amorphous semiconductors; glasses
73.61.Cw Elemental semiconductors
73.50.Pz Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
71.55.Jv Disordered structures; amorphous and glassy solids

Polarized electroabsorption spectra and light soaking of solar cells based on hydrogenated amorphous silicon

Lin Jiang, Qi Wang, E. A. Schiff, S. Guha, and J. Yang

Appl. Phys. Lett. 72, 1060 (1998); http://dx.doi.org/10.1063/1.120964 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present grazing-incidence measurements of polarized electroabsorption spectra in p–i–n solar cells based on hydrogenated amorphous silicon (a-Si:H). We find a significantly stronger polarization dependence in the present measurements compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We do not find any significant dependence of the polarized electroabsorption upon light soaking, although this effect was found in previous work with coplanar electrodes. © 1998 American Institute of Physics.
Show PACS
84.60.Jt Photoelectric conversion
78.66.Jg Amorphous semiconductors; glasses
73.61.Jc Amorphous semiconductors; glasses
78.20.Jq Electro-optical effects
73.50.Pz Photoconduction and photovoltaic effects

Junction devices based on sulfonated polyaniline

M. Narasimhan, M. Hagler, V. Cammarata, and M. Thakur

Appl. Phys. Lett. 72, 1063 (1998); http://dx.doi.org/10.1063/1.120965 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Schottky diodes were fabricated using aluminum/neutralized-sulfonated-polyaniline (SPAN) junctions. I–V and C–V measurements were made, and the barrier height (ΦB) and the background concentration (NB) were determined to be 0.8 V and 4×1017/cm3, respectively. Using these diodes as gate control, depletion-mode thin-film transistors were fabricated with a source and drain made of gold Ohmic contacts. The transistors were characterized by I–V measurements, and the carrier mobility determined from devices operating in the ∣VG∣>∣VDS∣ “linear” regime was about 0.01 cm2/V s. This high value of mobility could be attributed to the spherulitic (partially ordered) structures observed in the SPAN thin films. Field-effect transistors were also fabricated on SPAN films deposited on an n-doped silicon substrate acting as the gate electrode with a thermally grown oxide layer. A reasonably high on/off ratio ( ∼ 4×103) was measured in these devices. © 1998 American Institute of Physics.
Show PACS
73.40.Ns Metal-nonmetal contacts
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence

M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, and S. P. Denbaars

Appl. Phys. Lett. 72, 1066 (1998); http://dx.doi.org/10.1063/1.120966 (3 pages) | Cited 41 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime (0.06 ns) for a single quantum well structure, while an increasingly long decay lifetime is measured for multiquantum wells as more quantum wells are incorporated into the structure. Temperature-dependent lifetime measurements show that a nonradiative recombination mechanism activates above 45 K in the single quantum well but is less important in the multiquantum wells. © 1998 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes

M. Mamor, F. D. Auret, S. A. Goodman, and G. Myburg

Appl. Phys. Lett. 72, 1069 (1998); http://dx.doi.org/10.1063/1.120967 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Scandium (Sc) Schottky barrier diodes were fabricated by electron-beam (EB) deposition on epitaxially grown p-Si1−xGex strained films with x = 0.0–0.2. The EB deposition was performed either with or without shielding the Si1−xGex samples. The barrier height and the defects introduced during EB deposition have been investigated as a function of Ge composition. Our results showed that the barrier height decreased as the band gap changed with increasing Ge content. The defect properties were studied with deep-level transient spectroscopy. The most prominent defect observed in p-Si was a hole trap H(0.53) at Eν+0.53 eV. Increasing the Ge content led to a decrease in the activation energy of this defect and this decrease followed the same trend as the band-gap variation, suggesting that the main defect detected in p-Si1−xGex is the same as that observed in p-Si. © 1998 American Institute of Physics.
Show PACS
73.40.Ns Metal-nonmetal contacts
85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
71.55.Ht Other nonmetals
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Bx Metals, semimetals, and alloys

A novel tool for mapping composition distributions in semiconductor microstructures—application to InxGa1−xP quantum wires

P. Dua, S. L. Cooper, and K. Y. Cheng

Appl. Phys. Lett. 72, 1072 (1998); http://dx.doi.org/10.1063/1.120968 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow ( ∼ 150 Å) InxGa1−xP multiquantum wire array grown via a strain-induced laterally ordered process. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors

Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy

D. Vignaud, X. Wallart, and F. Mollot

Appl. Phys. Lett. 72, 1075 (1998); http://dx.doi.org/10.1063/1.120969 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
InAlAs–InP type II heterostructures grown by gas-source molecular beam epitaxy have been studied by photoluminescence. The interface recombination energy is found around 1.27–1.28 eV in the low injection limit and shifts towards higher energy when increasing the incident power. Similar results are obtained for direct (InAlAs grown on InP) and inverse (InP on InAlAs) structures. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Real time control of InxGa1−xN molecular beam epitaxy growth

N. Grandjean and J. Massies

Appl. Phys. Lett. 72, 1078 (1998); http://dx.doi.org/10.1063/1.120970 (3 pages) | Cited 39 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The growth of GaN and InxGa1−xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. In situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intensity were observed during both GaN and InxGa1−xN deposition. This allows determining in real time the composition of InxGa1−xN alloys. The effects of the growth temperature and the Ga flux on the In incorporation rate were investigated. The critical thickness for InGaN islanding as a function of In mole fraction is also easily deduced from RHEED experiments. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification

Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature

N. C. Chen, P. Y. Wang, and J. F. Chen

Appl. Phys. Lett. 72, 1081 (1998); http://dx.doi.org/10.1063/1.120971 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 °C and annealed at 620 °C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging–discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. © 1998 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Two-way switching based on turnstile operation

Kazuhito Tsukagoshi and Kazuo Nakazato

Appl. Phys. Lett. 72, 1084 (1998); http://dx.doi.org/10.1063/1.120972 (2 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two-way switching based on a turnstile operation was investigated. A clocking modulation carries a turnstile current through an input and one of two output multiple-tunnel junctions (MTJs). By changing side-gate voltages to the output MTJs, the output turnstile current is switched between the two output branches. The switching current consists of electron packets containing as few as 100 electrons. © 1998 American Institute of Physics.
Show PACS
85.35.Gv Single electron devices
84.32.Dd Connectors, relays, and switches

Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

Aditya Agarwal, T. E. Haynes, V. C. Venezia, O. W. Holland, and D. J. Eaglesham

Appl. Phys. Lett. 72, 1086 (1998); http://dx.doi.org/10.1063/1.120945 (3 pages) | Cited 61 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well as the more basic phenomenon of blistering, on which the technique is based. We show that when H and He gas implants are combined they produce a synergistic effect which enables thin-film separation at a much lower total implantation dose than that required for either H or He alone. By varying the H and He implantation doses we have been able to isolate the physical and chemical contributions of the gases to the blistering processes. We find that the essential role of H is to interact chemically with the implantation damage and create H-stabilized platelet-like defects, or microvoids. The efficiency of H in this action is linked to its effective lowering of the silicon internal surface energy. The second key component of the process is physical; it consists of diffusion of gas into the microvoids and gas expansion during annealing, which drives growth and the eventual intersection of the microvoids to form two continuous separable surfaces. He is more efficient than H for this process since He does not become chemically trapped at broken bonds and thus segregates into microvoids more readily. In particular, we have demonstrated that a 1×1016 cm−2 He dose in combination with a 7.5×1015 cm−2 H dose are sufficient to shear and transfer a thin silicon film onto a handle wafer after bonding the two wafers together. © 1998 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
61.72.Qq Microscopic defects (voids, inclusions, etc.)

Observation of the single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy

Masanori Otobe, Hiroshi Yajima, and Shunri Oda

Appl. Phys. Lett. 72, 1089 (1998); http://dx.doi.org/10.1063/1.120973 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have measured current–voltage (I–V) characteristics of individual surface oxidized nanocrystalline silicon (nc-Si) particles, which were grown in the gas phase of a plasma and which had well-defined grain sizes of less than 10 nm and a regular octahedron shape. The I–V characteristics were measured at room temperature using atomic force microscopy with conductive tips, which allows the grain size of nc-Si particles to also be measured directly. The measured I–V characteristics show staircaselike features. The period of the staircase increases with decreasing grain size, which is consistent with the single electron charging effect in nc-Si. © 1998 American Institute of Physics.
Show PACS
73.23.Hk Coulomb blockade; single-electron tunneling
72.80.Cw Elemental semiconductors

Composition dependence of room temperature 1.54 μm Er3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Jung H. Shin, Mun-Jun Kim, Se-young Seo, and Choochon Lee

Appl. Phys. Lett. 72, 1092 (1998); http://dx.doi.org/10.1063/1.120974 (3 pages) | Cited 54 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The composition dependence of room temperature 1.54 μm Er3+ photoluminescence of erbium-doped silicon:oxygen thin films produced by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with a Si:O ratio of 1:1.2 after a 900 °C anneal and the formation of silicon nanoclusters embedded in the SiO2 matrix. The high active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to the high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence. © 1998 American Institute of Physics.
Show PACS
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors

Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum

K. D. Hobart, M. E. Twigg, F. J. Kub, and C. A. Desmond

Appl. Phys. Lett. 72, 1095 (1998); http://dx.doi.org/10.1063/1.120975 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electrical characteristics of pn junctions formed by direct bonding of silicon wafers in ultra-high vacuum have been quantified. The bonding process produces low reverse leakage <1 μA/cm2 and near-ideal forward current. The observation of bulk-like bonded interfaces is supported by transmission electron microscopy and infra-red transmission imaging. © 1998 American Institute of Physics.
Show PACS
73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Cy Elemental semiconductors

Melting point depression of Al clusters generated during the early stages of film growth: Nanocalorimetry measurements

S. L. Lai, J. R. A. Carlsson, and L. H. Allen

Appl. Phys. Lett. 72, 1098 (1998); http://dx.doi.org/10.1063/1.120946 (3 pages) | Cited 49 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This work investigates the thermodynamic properties of small structures of Al using an ultrasensitive thin-film differential scanning calorimeter. Al thin films were deposited onto a Si3N4 surface via thermal evaporation over a range of thicknesses from 6 to 50 Å. The Al films were discontinuous and formed nanometer-sized clusters. Calorimetry measurements demonstrated that the melting point of the clusters is lower than the value for bulk Al. We show that the melting point of the clusters is size dependent, decreasing by as much as 140 °C for 2 nm clusters. The results have relevance in several key areas for Al metallization in micro-electronics including the early stages of film growth and texture formation, the Al reflow process, and the dimensional stability of high aspect ratio Al lines. © 1998 American Institute of Physics.
Show PACS
68.60.Wm Other nonelectronic physical properties
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
64.70.D- Solid-liquid transitions
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
81.07.-b Nanoscale materials and structures: fabrication and characterization
85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

The activation of Mg in GaN by annealing with minority-carrier injection

Mamoru Miyachi, Toshiyuki Tanaka, Yoshinori Kimura, and Hiroyuki Ota

Appl. Phys. Lett. 72, 1101 (1998); http://dx.doi.org/10.1063/1.120936 (3 pages) | Cited 32 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The activation of a Mg acceptor in GaN, by means of annealing under minority-carrier injection, is observed at a temperature above 300 °C. This activation is carried on with hydrogen left in the layer. The p-type GaN layers activated by this treatment are repassivated by additional annealing in an open-circuit configuration even in inert gas, and then reactivated by annealing under minority-carrier injection. Hydrogen remaining in the layer seems to play a major role in this reversible phenomenon. © 1998 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.55.Eq III-V semiconductors

Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes

M. Godlewski, T. Wojtowicz, G. Karczewski, J. Kossut, J. P. Bergman, and B. Monemar

Appl. Phys. Lett. 72, 1104 (1998); http://dx.doi.org/10.1063/1.120937 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoluminescence studies of CdTe/CdMnTe heterostructures grown either by the atomic layer epitaxy or by a standard molecular beam epitaxy are presented. Morphology of CdTe/CdMnTe interfaces is compared for heterostructures grown by these two methods. The inter-island exciton migration, reported until recently only for high quality GaAs/AlGaAs structures, is observed in our structures with the quantum well grown by the atomic layer epitaxy. This indicates that relatively large and flat quantum well islands with a width differing by one monolayer exist in these samples. The present study, thus, demonstrates an improved quality of interfaces in structures grown by the atomic layer epitaxy. © 1998 American Institute of Physics.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.20.At Surface states, band structure, electron density of states
81.05.Dz II-VI semiconductors
71.35.Gg Exciton-mediated interactions
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close