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6 Jul 1998

Volume 73, Issue 1, pp. 1-131

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Technique for integration of vertical cavity lasers and resonant photodetectors

O. Sjölund, D. A. Louderback, E. R. Hegblom, J. Ko, and L. A. Coldren

Appl. Phys. Lett. 73, 1 (1998); http://dx.doi.org/10.1063/1.122951 (3 pages) | Cited 20 times

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We demonstrate a design that allows fabrication of substrate input/output resonant-cavity photodetectors and vertical cavity lasers (VCLs) on the same substrate without regrowth. By selectively oxidizing a few layers in the bottom mirror the as-grown 80% reflectivity mirror, used as the input mirror for the detector, is converted to a 99.3% reflectivity mirror allowing fabrication of VCLs from the same epitaxial material. Since these two reflectivities are uncorrelated, the detectors and VCLs can be individually designed. Despite the change in refractive index from ∼3 to ∼1.6 in the oxidized layers, the structure can be designed to have nearly the same resonance wavelength for both the detectors and VCLs. Using this design strategy, we have successfully fabricated high-performance resonant photodetectors and VCLs from the same epitaxial material. The photodetectors have an absorption of 56% and an optical bandwidth of 5.9 nm, in good agreement with theory. Small diameter, single-mode VCLs have threshold currents as low as 180 μA with 33% slope efficiencies while multimode devices have slope efficiencies exceeding 60% with less than 500 μA threshold currents. © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.Mq Oxidation
42.79.Bh Lenses, prisms and mirrors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Improved performance of photorefractive polymers based on merocyanine dyes in a polar matrix

Klaus Meerholz, Yessica De Nardin, Reinhard Bittner, Rüdiger Wortmann, and Frank Würthner

Appl. Phys. Lett. 73, 4 (1998); http://dx.doi.org/10.1063/1.122950 (3 pages) | Cited 25 times

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Recently, chromophores with a large figure-of-merit for incorporation into photorefractive polymers with low glass-transition temperature have become available. However, their rather polar nature so far limited their use in typical nonpolar photoconducting matrices due to dye aggregation. By incorporation of an additional polar compound we were able to influence this situation favorably. The material we report here has a factor 4 to 5 (2) improved index modulation amplitude (gain coefficient) compared to the best previously known materials. The material is sufficiently resistant against phase separation and operates in the near infrared at typical wavelengths of commercially available high-power laser diodes. © 1998 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.-e Optical properties of bulk materials and thin films
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Single-molecule spectroscopy with 27 fs pulses: Time-resolved experiments and direct imaging of orientational distributions

M. A. Bopp, Y. Jia, G. Haran, E. A. Morlino, and R. M. Hochstrasser

Appl. Phys. Lett. 73, 7 (1998); http://dx.doi.org/10.1063/1.121730 (3 pages) | Cited 19 times

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Confocal microscopy of single molecules bound on a silica surface is performed with precompressed 27 fs laser pulses. Interferometric autocorrelation using a single molecule is demonstrated. It is also shown that orientational distributions can be directly obtained from one- and two-photon images produced with circularly polarized light. © 1998 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Hx Other solid inorganic materials

Ultrafast optical switching by photoinduced electrochromism in cast films of polymeric 4,4′-bipyridinium salts with di-iodides

Hiroshi Inoue, Hiroshi Sakaguchi, and Toshihiko Nagamura

Appl. Phys. Lett. 73, 10 (1998); http://dx.doi.org/10.1063/1.122952 (3 pages) | Cited 18 times

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Femtosecond dynamics of color changes due to photoinduced electron transfer and reverse reactions in polymeric 4,4′-bipyridinium di-iodides salts were studied with a fs laser pump–probe technique. The characteristic color change was shown to take place in less than 1 ps by fs-laser excitation of an ion-pair charge-transfer band, which may be applied to ultrafast THz all-optical switching devices using visible light. © 1998 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics
61.41.+e Polymers, elastomers, and plastics
82.50.-m Photochemistry

Heterodyning scheme employing quantum interference

Jacob B. Khurgin, Babak Saif, and Bernard Seery

Appl. Phys. Lett. 73, 13 (1998); http://dx.doi.org/10.1063/1.121707 (3 pages) | Cited 4 times

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We propose a method of heterodyne detection of far-infrared signals using quantum interference between one- and two-photon absorption. We suggest different implementations of the scheme using multiple quantum well detectors and evaluate its sensitivity. © 1998 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Ds Quantum interference devices

Two-dimensional photorefractive spatial solitons in centrosymmetric paraelectric potassium–lithium–tantalate–niobate

Eugenio DelRe, Mario Tamburrini, Mordechai Segev, Eli Refaeli, and Aharon J. Agranat

Appl. Phys. Lett. 73, 16 (1998); http://dx.doi.org/10.1063/1.121708 (3 pages) | Cited 28 times

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We report the observation of steady-state two-dimensional photorefractive self-trapping and screening spatial soliton formation in a sample of potassium–lithium–tantalate–niobate in the centrosymmetric paraelectric phase. © 1998 American Institute of Physics.
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42.65.Tg Optical solitons; nonlinear guided waves
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.-e Optical properties of bulk materials and thin films

Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels

Aaron E. Bond and P. Daniel Dapkus

Appl. Phys. Lett. 73, 19 (1998); http://dx.doi.org/10.1063/1.121709 (3 pages) | Cited 8 times

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The authors present a way to monolithically integrate surface—and substrate—emitting vertical cavity surface emitting lasers (VCSELs) on a single substrate for use in smart pixel applications. Spatially selective oxidation is used to adjust the reflectivity of distributed Bragg reflectors to fabricate surface and substrate emitting VCSELs with threshold currents of 65–70 μA, far field FWHMs of 9°–16°, and slope efficiencies of 16%–18%. Threshold currents and far field angles for various aperture dimensions are measured and discussed. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.-q Optoelectronic devices

Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

G. Y. Zhao, H. Ishikawa, G. Yu, T. Egawa, J. Watanabe, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 73, 22 (1998); http://dx.doi.org/10.1063/1.121710 (3 pages) | Cited 7 times

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A study of thermo-optical coefficient (dn/dT) of GaN using spectroscopic ellipsometry is made, and a large thermo-optical nonlinearity near band edge, which increases with increasing temperature, has been observed. Kramers–Kronig transformation has been used to verify our results and a qualitative consistency has been obtained. © 1998 American Institute of Physics.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
78.66.Fd III-V semiconductors
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Experimental study of spontaneous electric field generated by a laser plasma

A. V. Kabashin, P. I. Nikitin, W. Marine, and M. Sentis

Appl. Phys. Lett. 73, 25 (1998); http://dx.doi.org/10.1063/1.121711 (3 pages) | Cited 17 times

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We report investigations of a space-time structure of the electric field of laser plasma from a solid target. An ArF excimer laser with an intensity of I ≅ 108 W/cm2 was used to produce the plasma on various targets placed in air at atmospheric pressure. A strong difference in both the amplitude (by more than 1–2 orders of magnitude) and the structure of the electric field for conductive and dielectric targets has been observed. The field distribution for a conductive target was found to correspond to a dipole configuration of charges in the laser plasma, while for the dielectric target a quadrupole configuration was revealed. Possible explanations and applications of the observed effect are discussed. © 1998 American Institute of Physics.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.-b Plasma properties
52.70.Ds Electric and magnetic measurements

Spectroscopic evidence of the formation of N–H and N–D complexes in plasma hydrogenated and deuterated ZnTe:N layers

H. Pelletier, A. Lusson, B. Theys, J. Chevallier, and N. Magnéa

Appl. Phys. Lett. 73, 28 (1998); http://dx.doi.org/10.1063/1.121712 (3 pages) | Cited 2 times

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Homoepitaxially grown nitrogen-doped ZnTe layers have been exposed to a hydrogen (deuterium) plasma. After hydrogen (deuterium) diffusion, an infrared absorption band appears at 3346 cm−1 (2489 cm−1). It is assigned to the vibrational stretching mode of the N–H (N–D) bond. It is also shown that the absence of such detectable bands in heteroepitaxially grown ZnTe/CdZnTe layers can be explained by thermal strains originating from the difference between the ZnTe and the CdZnTe thermal expansion coefficients. © 1998 American Institute of Physics.
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78.66.Hf II-VI semiconductors

Determination of the absolute CH3 radical flux emanating from a methane electron cyclotron resonance plasma

P. Pecher and W. Jacob

Appl. Phys. Lett. 73, 31 (1998); http://dx.doi.org/10.1063/1.121713 (3 pages) | Cited 27 times

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Methyl radicals from a methane electron cyclotron resonance plasma are measured quantitatively at the sample position by ionization-threshold mass spectrometry (ITMS). The absolute fluxes are determined by calibrating the CH3 ITMS results with those of methane, taking into account the published energy-dependent cross sections for the ionization of CH3 and CH4, respectively. The measured CH3 radical fluxes are on the order of some 1015 cm−2 s−1, which is in accordance with recent modeling results. © 1998 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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Phonon density of states of bulk gallium nitride

J. C. Nipko, C.-K. Loong, C. M. Balkas, and R. F. Davis

Appl. Phys. Lett. 73, 34 (1998); http://dx.doi.org/10.1063/1.121714 (3 pages) | Cited 55 times

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We report the measured phonon density of states of a bulk GaN powder by time-of-flight neutron spectroscopy. The observed one-phonon excitation spectrum consists of two broad bands centered at about 23 and 39 meV corresponding to the acoustic and the first group of optical phonons; two sharp bands of upper optic modes at about 75 and 86 meV; and a gap of 45–65 meV. The phonon dispersion curves, lattice specific heat, and Debye temperature are calculated from fitting the data with a rigid-ion model. © 1998 American Institute of Physics.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
65.40.-b Thermal properties of crystalline solids
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions

Experimental evidence of the size effect in thin ferroelectric films

Orest G. Vendik, Svetlana P. Zubko, and Leon T. Ter-Martirosayn

Appl. Phys. Lett. 73, 37 (1998); http://dx.doi.org/10.1063/1.121715 (3 pages) | Cited 48 times

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The phenomenological model based on the Ginsburg–Devonshire equation has been applied to investigate the size effect in thin SrTiO3 and BaxSr1−xTiO3 films. The size effect is caused by two phenomena: spatial correlation of the polarization and boundary conditions for the ferroelectric polarization on electrodes. The experimental data obtained by different groups were used to investigate the boundary conditions. The most remarkable result was found for the SrRuO3/BaxSr1−xTiO3/SrRuO3 structure which is characterized by free boundary conditions for the ferroelectric polarization. Such boundary conditions provide the highest value of the effective dielectric constant of a dielectric layer in the sandwich structure. The strain dependence of the dielectric permittivity of SrTiO3 at finite temperatures was taken into account as well. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope—Si(100) at 80 K

K. Hata, M. Ishida, K. Miyake, and H. Shigekawa

Appl. Phys. Lett. 73, 40 (1998); http://dx.doi.org/10.1063/1.121716 (3 pages) | Cited 10 times

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We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric⇔buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects. © 1998 American Institute of Physics.
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68.35.Ja Surface and interface dynamics and vibrations
68.35.B- Structure of clean surfaces (and surface reconstruction)

Stress evolution in Mo/Si multilayers for high-reflectivity extreme ultraviolet mirrors

J. M. Freitag and B. M. Clemens

Appl. Phys. Lett. 73, 43 (1998); http://dx.doi.org/10.1063/1.121717 (3 pages) | Cited 20 times

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The stress evolution of sputter deposited Mo/Si multilayers of possible application as extreme ultraviolet light mirrors has been investigated by in situ substrate curvature measurements using a multiple parallel laser beam technique. Our preliminary results show well-defined stress modulation concurrent with the deposition of Mo and Si layers in the multilayer structure. Large changes in substrate curvature were measured during the early stages of deposition of the individual layers, with Mo exhibiting apparent tension and Si exhibiting apparent compression. The magnitudes of these curvature changes partially offset each other, resulting in an average compressive stress of −350 MPa in the multilayer. Possible stress generating mechanisms during growth of these multilayers as well as single layer films of Mo and Si will be discussed. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.43.Dq Amorphous semiconductors, metals, and alloys
78.66.Jg Amorphous semiconductors; glasses
42.79.Bh Lenses, prisms and mirrors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Ion-induced electron emission from diamond

R. Kalish, V. Richter, E. Cheifetz, A. Zalman, and P. Yona

Appl. Phys. Lett. 73, 46 (1998); http://dx.doi.org/10.1063/1.121718 (3 pages) | Cited 10 times

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The electron emission yields (γ) from conductive (B doped) and undoped chemical vapor deposited diamond caused by light (protons) and heavy (argon) ion impact were measured as functions of ion dose and energy (40–300 keV). Very large values of γ are obtained for the case of B doped diamond for both ions. Whereas the emission due to Ar is found to decay very rapidly towards the low γ value measured for graphite, it remains persistently very high (γ ∼ 25) for the case of protons, indicating possible application of diamond as a sensitive detector for light ions. © 1998 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.05.Cy Elemental semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
72.80.Cw Elemental semiconductors
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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Modification of InAs quantum dot structure by the growth of the capping layer

G. D. Lian, J. Yuan, L. M. Brown, G. H. Kim, and D. A. Ritchie

Appl. Phys. Lett. 73, 49 (1998); http://dx.doi.org/10.1063/1.121719 (3 pages) | Cited 55 times

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InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors

Zinc and phosphorus co-implantation in indium phosphide

Kin Man Yu and M. C. Ridgway

Appl. Phys. Lett. 73, 52 (1998); http://dx.doi.org/10.1063/1.121720 (3 pages) | Cited 4 times

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Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼ 4×1019 cm−3, only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950 °C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion—only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ⩽ 6×1018 cm−3 and >50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
61.66.Bi Elemental solids
61.66.Dk Alloys

Investigation of solid phase reaction of Ni with GaAs/Si(001)

T. C. Zhou, S. Jiang, W. P. Kirk, P. H. Hao, L. C. Wang, and P. J. Chen

Appl. Phys. Lett. 73, 55 (1998); http://dx.doi.org/10.1063/1.121721 (3 pages)

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A Ni/GaAs/Si(001) structure was used to investigate solid-phase reactions of Ni with GaAs and Si. Cross-sectional transmission electron microscopy and secondary-ion-mass-spectrometry depth profile data reveal that a Ni/GaAs/Si(001) structure converts to a crystalline GaAs/amorphous NiSi/Si(001) after low temperature (⩽350 °C) annealing. We demonstrate that the reaction is driven by the decomposition of a NixGaAs intermediate which is induced by the proximity of the Si substrate. Two models are suggested to explain the mechanism of a crystalline GaAs layer nucleated from NixGaAs on the amorphous NiSi layer. © 1998 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Gh Other heat and thermomechanical treatments

Imaging and identification of atomic planes of cleaved Bi2Sr2CaCu2O8+δ by high resolution scanning tunneling microscopy

S. H. Pan, E. W. Hudson, J. Ma, and J. C. Davis

Appl. Phys. Lett. 73, 58 (1998); http://dx.doi.org/10.1063/1.121722 (3 pages) | Cited 9 times

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Imaging of the surface of a cleaved Bi2Sr2CaCu2O8+δ (BSCCO) single crystal with a scanning tunneling microscope reveals a series of repeating terraces, whose separations are then used to identify the atomic planes which are exposed. On each of the exposed planes, the incommensurate modulation is also clearly resolved with atomic resolution. The measured separations between the terraces lead to the deduction that any atomic layer can be exposed by mechanical cleavage of BSCCO. We, therefore, suggest that the identity of atomic planes, and the direction of tunneling, should always be taken into consideration when interpreting tunneling spectra obtained on such cleaved BSCCO crystals. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs coupled double quantum wells

T. W. Kim, M. Jung, D. U. Lee, Y. S. Lim, and J. Y. Lee

Appl. Phys. Lett. 73, 61 (1998); http://dx.doi.org/10.1063/1.121723 (3 pages) | Cited 1 time

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Transmission electron microscopy (TEM) and Raman scattering spectroscopy measurements were performed to investigate strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs modulation-doped coupled double quantum wells. The high-resolution TEM images showed that a 100-Å In0.8Ga0.2As deep quantum well and a 100-Å In0.53Ga0.47As shallow quantum well were separated by a 30-Å In0.25Ga0.75As embedded potential barrier. The selected-area electron-diffraction pattern obtained from TEM measurements on the InxGa1−xAs/InyAl1−yAs double quantum well showed that the InxGa1−xAs active layers were grown pseudomorphologically on the InP buffer layer. The values of the strain and the stress of the InxGa1−xAs layers were determined from the electron-diffraction pattern. Based on the TEM results, a possible crystal structure for the InxGa1−xAs/InyAl1−yAs coupled double quantum well is presented. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Fs III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy

F. Ganikhanov, K. C. Burr, and C. L. Tang

Appl. Phys. Lett. 73, 64 (1998); http://dx.doi.org/10.1063/1.121724 (3 pages) | Cited 11 times

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Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.30.Fs III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.38.-k Polarons and electron-phonon interactions

Ion implantation enhanced intermixing of Al-free 980 nm laser structures

P. G. Piva, S. Charbonneau, R. D. Goldberg, I. V. Mitchell, G. Hillier, and C. Miner

Appl. Phys. Lett. 73, 67 (1998); http://dx.doi.org/10.1063/1.121725 (3 pages) | Cited 2 times

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An investigation of the intermixing enhancement in an InGaAs/InGaAsP/InGaP partial laser structure following phosphorous implantation at 30, 80, and 7000 keV was carried out. We find that for the 30 and 80 keV implant energies, band gap shifts in excess of 80 meV could be imparted to a single embedded 8.5 nm InGaAs quantum well (QW) lying several thousand angstroms beyond the maximum ion range. As both the 30 and 80 keV implants kept the end of range damage spatially separate from optical mode region, the optical quality (inferred from photoluminescence intensity measurements) of the QW material was preserved to a greater extent than that resulting from the 7000 keV implants (where implant damage was directly created in the QW during ion bombardment). This result suggests that device structures containing InGaP cladding layers are well suited for monolithic integration as the masking of low energy ions with high lateral resolution can be achieved using routinely available masking techniques. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Zahia Bougrioua, Roman Maciejko, Ke Wu, K. Wu, R. Maciejko, and Z. Bougrioua

Appl. Phys. Lett. 73, 70 (1998); http://dx.doi.org/10.1063/1.121726 (3 pages) | Cited 1 time

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We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in the free and the confined states, depending on the initial carrier energy and on the component of the total wave vector parallel to the dislocations. We demonstrated that this new scattering process could affect the electron mean velocity by more than 30% from the ideal case treated commonly by the Monte Carlo simulators. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms

Wave form reconstruction of photoconductive switch using minimum phase retrieval algorithm

Woopoung Kim, Jongjoo Lee, Jaehoon Lee, Heeseok Lee, and Joungho Kim

Appl. Phys. Lett. 73, 73 (1998); http://dx.doi.org/10.1063/1.121727 (3 pages)

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An ideal delta function or a Gaussian function has been assumed for the photoconductive switching response of a photoconductive sampling experiment. In this letter, an effective wave form reconstruction method, called minimum phase retrieval algorithm, is presented to find the correct response function of the photoconductive sampling gate. In addition, the method is applied to the retrieval of a picosecond guided pulse wave form obtained from an on-wafer photoconductive sampling experiment. The reconstruction method should be used for the terahertz wave form detection measurement, where the pulse width is comparable to the switching time of the sampling gate. © 1998 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
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