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7 Sep 1998

Volume 73, Issue 10, pp. 1311-1448

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Changes in the electronic structure of CuInS2 thin films by Na incorporation

Koichi Fukuzaki, Shigemi Kohiki, Hideki Yoshikawa, Sei Fukushima, Takayuki Watanabe, and Isao Kojima

Appl. Phys. Lett. 73, 1385 (1998); http://dx.doi.org/10.1063/1.122168 (3 pages) | Cited 11 times

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For Na-free and Cu-deficient CuInS2 thin films with chalcopyrite structure, electron spectra of core levels and valence band were similar to each other in spite of a difference in Cu deficiency. Incorporation of Na with the CuInS2 films caused peak shifts by −0.5 eV for the core levels without changes in both linewidth and shape. The electron density of states, deeper by 1–5 eV than that from Cu d–S p hybridization centered at around 2.5 eV, increased by the Na incorporation, and increments in the electron density of states were larger for the films with larger the Cu deficiency. The Na incorporation yielded a surface layer expressed as (Na,Cu)InS2 on the Cu deficient CuInS2 films. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface

Hyun-Chul Ko, Doo-Cheol Park, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, and Yang-Soo Kim

Appl. Phys. Lett. 73, 1388 (1998); http://dx.doi.org/10.1063/1.121953 (3 pages) | Cited 6 times

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Anomalous optical properties of Zn1−xCdxSe/ZnSe strained-layer single quantum wells (SQWs) fabricated on cleaved GaAs(110) surfaces in ultrahigh vacuum by molecular beam epitaxy have been investigated. From the temperature-dependent photoluminescence measurement, the origins of localized excitonic emissions of two kinds of SQW structures with different Cd compositions are suggested. Localization centers of SQWs with low Cd composition (14%) are mainly originated by the well thickness fluctuation. However, SQWs with high Cd composition (27%) showed localized excitonic emissions at low temperature due to the Cd composition fluctuations rather than the lack of thickness uniformity of the well layer. Estimated averaged depths of localization of excitons by model calculations are 9 and 14 meV for the wells with 14% and 27% Cd compositions, respectively. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.20.At Surface states, band structure, electron density of states
78.66.Hf II-VI semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.Fz Weak or Anderson localization
78.55.Et II-VI semiconductors

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong, S. J. Cai, R. Li, Kang Wang, H. W. Jiang, and Mary Chen

Appl. Phys. Lett. 73, 1391 (1998); http://dx.doi.org/10.1063/1.121954 (3 pages) | Cited 39 times

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We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov–de Hass oscillations, a carrier effective mass of m∗ = 0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012 cm−2, only the lowest subband in the quantum well is occupied. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.43.-f Quantum Hall effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2

P. R. Willmott and F. Antoni

Appl. Phys. Lett. 73, 1394 (1998); http://dx.doi.org/10.1063/1.121955 (3 pages) | Cited 12 times

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Wurtzitic GaN films were grown by reactive crossed-beam pulsed laser deposition at 248 nm (KrF) using a liquid Ga target and a synchronous N2 pulse on atomically flat, initially two domain 2×1 reconstructed Si(001) substrates. The films were (0001) single phase for substrate temperatures between 200 and 700 °C, and also grew in a twinned epitaxial manner with the crystallites oriented parallel to the [110] and [110] in-plane directions of the Si(001) substrate between 550 and 700 °C. Above 700 °C, no GaN could be detected and only Ga liquid films were produced. The films were subsequently investigated ex situ by x-ray diffraction, reflection high-energy electron diffraction, and photoluminescence. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors

Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

Wen-Chau Liu, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, and Yung-Hsin Shie

Appl. Phys. Lett. 73, 1397 (1998); http://dx.doi.org/10.1063/1.121956 (3 pages) | Cited 8 times

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An In0.5Ga0.5P/GaAs double heterojunction bipolar transistor with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter–base and base–collector heterojunctions. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications. © 1998 American Institute of Physics.
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85.30.Pq Bipolar transistors
77.22.Jp Dielectric breakdown and space-charge effects
73.61.Ey III-V semiconductors

Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals

R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks

Appl. Phys. Lett. 73, 1400 (1998); http://dx.doi.org/10.1063/1.122169 (3 pages) | Cited 13 times

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We present a study of time-resolved photoluminescence (TRPL) measurements of n-type CdTe single crystals doped by a novel procedure. The measurements show that the surface recombination velocity of low doped n-type (n0 = 1.5×1016 cm−3) samples was below 200 cm/s and the nonradiative bulk recombination time was around 180 ns. By conducting the TRPL measurements under different carrier injection levels, it was found that radiative bulk recombination was the dominant mechanism in the low doped crystals. This enabled us to obtain the bulk radiative recombination rate constant, B, which was found to be 3±0.5×10−9 cm3 s−1. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
78.55.Et II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures

Q. Chen, M. Blasingame, and C. Faber

Appl. Phys. Lett. 73, 1403 (1998); http://dx.doi.org/10.1063/1.121957 (3 pages)

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The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Lattice location of Si in ion implanted GaN

H. Kobayashi and W. M. Gibson

Appl. Phys. Lett. 73, 1406 (1998); http://dx.doi.org/10.1063/1.121958 (3 pages) | Cited 24 times

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The lattice location of Si in GaN has been investigated by ion channeling in combination with Rutherford backscattering spectrometry, particle induced x-ray emission, and nuclear reaction analysis. Metalorganic chemical vapor deposition grown GaN on c-plane sapphire substrates and implanted with 28Si at a dose of 7×1014 cm−2 with postimplant annealing were investigated. It was found that almost 100% of Si goes into the Ga site at 1100 °C. Our results directly indicate that the electrical activation of Si implanted GaN with postimplant annealing is due to the formation of substitutional Si at this temperature. © 1998 American Institute of Physics.
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61.72.S- Impurities in crystals
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin

Appl. Phys. Lett. 73, 1409 (1998); http://dx.doi.org/10.1063/1.121959 (3 pages) | Cited 66 times

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We report direct-backscattering Raman studies of GaAs1−xNx alloys, for x ⩽ 0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm−1 is found to red shift at a rate of −136±10 cm−1/x. This is well described by the combined effects of strain and alloying. The GaN-like phonon near 470 cm−1 is observed to increase in intensity in direct proportion to x, and to systematically blue shift at a rate of 197±10 cm−1/x. This blue shift is likewise attributed to strain and alloying. The GaAs-like second-order features are also seen to broaden slightly and diminish in intensity with increasing nitrogen concentration. These results are attributed to a weak breakdown in the zincblende-crystal long-range order, possibly related to the presence of ordered domains within the random alloy. © 1998 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors

Large periodic potential under lateral surface superlattices fabricated from heteroepitaxial stressor layers

C. J. Emeleus, B. Milton, A. R. Long, J. H. Davies, D. E. Petticrew, and M. C. Holland

Appl. Phys. Lett. 73, 1412 (1998); http://dx.doi.org/10.1063/1.121960 (3 pages) | Cited 7 times

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We have fabricated lateral surface superlattices by etching a strained layer of In0.2Ga0.8As near the surface of a heterostructure. This provides strong modulation of the electron gas while retaining a high electron mobility. The potential arises mainly from strain and the piezoelectric effect, which depends on orientation, and from the change in the surface profile. The fundamental components of these two contributions cancel in one orientation to leave a dominant second harmonic. This effectively halves the period of the superlattice from its lithographic value and provides a promising technique for creating potentials with a period comparable to the Fermi wavelength. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Cf Surface cleaning, etching, patterning
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors

Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

A. Polimeni, M. Henini, A. Patanè, L. Eaves, P. C. Main, and G. Hill

Appl. Phys. Lett. 73, 1415 (1998); http://dx.doi.org/10.1063/1.121961 (3 pages) | Cited 23 times

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We have studied the optical properties of (InGa)As self-assembled quantum dots grown on (311)B-oriented GaAs substrates. The luminescence linewidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in (311)B. In order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (100) to the (311)B devices. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors

Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing

I. E. Tyschenko, L. Rebohle, R. A. Yankov, W. Skorupa, and A. Misiuk

Appl. Phys. Lett. 73, 1418 (1998); http://dx.doi.org/10.1063/1.121962 (3 pages) | Cited 9 times

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We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO2 films irradiated with Si+ ions using double-energy implants at 100 and 200 keV and ion doses ranging from 1.2×1016 to 6.3×1016 cm−2. Postimplantation anneals have been carried out in an Ar ambient at temperatures Ta of 400 and 450 °C for 10 h at both atmospheric pressure and hydrostatic pressures of 0.1, 10, 12, and 15 kbar. It has been found that the intensity of the ultraviolet (∼360 nm), blue (∼460 nm), and red (∼600 nm) PL emission bands increases with raising hydrostatic pressure whereby the PL peaks retain their wavelength positions. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centers and small Si clusters within metastable regions of the ion-implanted SiO2. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model

Lourdes Pelaz, G. H. Gilmer, M. Jaraiz, S. B. Herner, H.-J. Gossmann, D. J. Eaglesham, G. Hobler, C. S. Rafferty, and J. Barbolla

Appl. Phys. Lett. 73, 1421 (1998); http://dx.doi.org/10.1063/1.121963 (3 pages) | Cited 32 times

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The influence of ion mass on transient enhanced diffusion (TED) and defect evolution after ion implantation in Si has been studied by atomistic simulation and compared with experiments. We have analyzed the TED induced by B, P, and As implants with equal range and energy: TED increases with ion mass for equal range implants, and species of different mass but equal energy cause approximately the same amount of TED. Heavier ions produce a larger redistribution of the Si atoms in the crystal, leading to a larger excess of interstitials deeper in the bulk and an excess of vacancies closer to the surface. For high-mass ions more interstitials escape recombination with vacancies, are stored in clusters, and then contribute to TED. TED can be described in terms of an effective “+n” or “plus factor” that increases with the implanted ion mass. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
66.30.J- Diffusion of impurities
72.80.Cw Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters

Iron solubility in highly boron-doped silicon

S. A. McHugo, R. J. McDonald, A. R. Smith, D. L. Hurley, and E. R. Weber

Appl. Phys. Lett. 73, 1424 (1998); http://dx.doi.org/10.1063/1.121964 (3 pages) | Cited 26 times

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We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100 °C in silicon doped with either 1.5×1019 or 6.5×1014 boron atoms/cm3. We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800 °C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. © 1998 American Institute of Physics.
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64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals
81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors

Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC

Hisayoshi Itoh, Thomas Troffer, Christian Peppermuller, and Gerhard Pensl

Appl. Phys. Lett. 73, 1427 (1998); http://dx.doi.org/10.1063/1.121965 (3 pages) | Cited 14 times

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The influence of co-implantation of C or Si ions on the electrical activation of B acceptors in 4H–SiC was studied by using Hall effect and photoluminescence (PL) investigations. The free hole concentration in B-implanted layers is found to increase due to co-implantation of C and to decrease owing to Si co-implantation. Hot co-implantation of C at 800 °C gives rise to a further increase of the free hole concentration. It is found that the intensity of the PL peak at a wavelength 383.9 nm, which arises from shallow B acceptors [Sridhara et al., Mater. Sci. Forum 264–268, 461 (1998)], is enhanced by the coimplantation of C. These results demonstrate that the electrical properties of B-implanted p-type layers are improved by C co-implantation. The mechanisms, which alter the electrical activation of implanted B atoms due to co-implantation of C or Si, are discussed. © 1998 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
71.55.Ht Other nonmetals
72.20.My Galvanomagnetic and other magnetotransport effects
78.55.Hx Other solid inorganic materials
72.80.Jc Other crystalline inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus

Appl. Phys. Lett. 73, 1430 (1998); http://dx.doi.org/10.1063/1.121966 (3 pages) | Cited 21 times

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Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics
68.35.Fx Diffusion; interface formation
71.35.-y Excitons and related phenomena
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Absolute quantum photoyield of diamond thin films: Dependence on surface preparation and stability under ambient conditions

A. Laikhtman, A. Hoffman, R. Kalish, Y. Avigal, A. Breskin, R. Chechik, E. Shefer, and Y. Lifshitz

Appl. Phys. Lett. 73, 1433 (1998); http://dx.doi.org/10.1063/1.121967 (3 pages) | Cited 36 times

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Absolute quantum photoyield (QPY) measurements (140–210 nm) of chemical vapor deposited (CVD) diamond films are reported. The dependence of the QPY on hydrogenation by exposure to a hydrogen microwave (MW) plasma and oxidation by a mixture of acids or on exposure to air under ambient conditions have been studied. Films deposited by MWCVD display a higher QPY than those grown by hot filament (HF) CVD. The QPY values are found to depend on the state of the surface. Hydrogen-terminated films exhibit values above 12% at 140 nm, whereas even small amounts of oxygen strongly degrade the QPY. B-doping, at the level of 1500 ppm, has no apparent effect on the photoemission properties. Exposure of the hydrogenated films to ambient conditions results in oxygen adsorption, leading to degradation of the photoemission properties. Analysis of the data within the three-step model of photoemission clearly shows that the state of the surface is a dominant factor determining the QPY. © 1998 American Institute of Physics.
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72.80.Cw Elemental semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Structural and magneto-transport properties of electrodeposited bismuth nanowires

Kai Liu, C. L. Chien, P. C. Searson, and Kui Yu-Zhang

Appl. Phys. Lett. 73, 1436 (1998); http://dx.doi.org/10.1063/1.122378 (3 pages) | Cited 97 times

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Arrays of semimetallic Bi nanowires have been successfully fabricated by electrodeposition. Each nanowire consists of elongated Bi grains along the wire direction. Very large positive magnetoresistance of 300% at low temperatures and 70% at room temperature with quasilinear field dependence has been observed. These features are desirable for wide-range field sensing applications. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
72.20.My Galvanomagnetic and other magnetotransport effects
81.07.-b Nanoscale materials and structures: fabrication and characterization

Forward-transfer laser implantation of pyrene molecules in a solid polymer

D. M. Karnakis, M. Goto, N. Ichinose, S. Kawanishi, and H. Fukumura

Appl. Phys. Lett. 73, 1439 (1998); http://dx.doi.org/10.1063/1.121968 (3 pages) | Cited 4 times

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Excimer laser- (248 nm) induced pyrene implantation in a solid polymer has been investigated in the forward-transfer configuration. Atomic force microscopy provides detailed topological images of the implanted surface, the geometry of which remains mostly unaltered following low-intensity laser radiation in contrast to a laser ablation transfer case. The dopant host polymer thickness appears to strongly influence the efficiency of the process. The experimental results are interpreted on the basis of a thermally activated ejection and implantation mechanism. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
42.62.-b Laser applications

Two distinct dielectric relaxation mechanisms in the low-frequency range in (K0.50Na0.50)2(Sr0.75Ba0.25)4Nb10O30 ceramics

Sangdon Bu, Eunjoo Shin, and Gwangseo Park

Appl. Phys. Lett. 73, 1442 (1998); http://dx.doi.org/10.1063/1.122379 (3 pages) | Cited 1 time

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The effects of space charges on the ferroelectric properties of (K0.50Na0.50)2(Sr0.75Ba0.25)4Nb10O30 ceramics were studied using the ac complex impedance technique. Using our sample, which was aged at room temperature in order to induce a motion of space charges, we observed two dielectric relaxation mechanisms, each having different physical characters in the low-frequency range at temperatures above the Curie point (Tc ∼ 208 °C). One mechanism may be attributed to the hopping process of the space charges bound inside grains, while the other seems to be associated with the space charges at the grain boundary layers. The dielectric measurements were analyzed using equivalent circuits composed of a capacitor (1) connected in series and (2) connected in parallel with a parallelRC circuit. These results were also examined within the framework of a model based on space-charge migration, which was suggested as an essential process for aging. This leads to the conclusion that the two mechanisms are distinct. © 1998 American Institute of Physics.  
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
77.80.B- Phase transitions and Curie point
61.72.Mm Grain and twin boundaries

Effect of surface roughness on the secondary ion yield in ion sputtering

Maxim A. Makeev and Albert-László Barabási

Appl. Phys. Lett. 73, 1445 (1998); http://dx.doi.org/10.1063/1.122170 (3 pages) | Cited 6 times

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There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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Erratum: “Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors” [Appl. Phys. Lett. 73, 529 (1998)]

G. Nagy, M. Levy, R. Scarmozzino, R. M. Osgood, H. Dai, R. E. Smalley, C. A. Michaels, E. T. Sevy, G. W. Flynn, and G. F. McLane

Appl. Phys. Lett. 73, 1448 (1998); http://dx.doi.org/10.1063/1.122171 (1 page)

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Abstract Unavailable
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99.10.Cd Errata
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.05.Ea III-V semiconductors
85.40.Hp Lithography, masks and pattern transfer
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
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