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7 Sep 1998

Volume 73, Issue 10, pp. 1311-1448

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Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, and P. D. Dapkus

Appl. Phys. Lett. 73, 1430 (1998); http://dx.doi.org/10.1063/1.121966 (3 pages) | Cited 21 times

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Show Abstract
Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination. © 1998 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics
68.35.Fx Diffusion; interface formation
71.35.-y Excitons and related phenomena
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