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7 Sep 1998

Volume 73, Issue 10, pp. 1311-1448

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Absolute quantum photoyield of diamond thin films: Dependence on surface preparation and stability under ambient conditions

A. Laikhtman, A. Hoffman, R. Kalish, Y. Avigal, A. Breskin, R. Chechik, E. Shefer, and Y. Lifshitz

Appl. Phys. Lett. 73, 1433 (1998); http://dx.doi.org/10.1063/1.121967 (3 pages) | Cited 36 times

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Absolute quantum photoyield (QPY) measurements (140–210 nm) of chemical vapor deposited (CVD) diamond films are reported. The dependence of the QPY on hydrogenation by exposure to a hydrogen microwave (MW) plasma and oxidation by a mixture of acids or on exposure to air under ambient conditions have been studied. Films deposited by MWCVD display a higher QPY than those grown by hot filament (HF) CVD. The QPY values are found to depend on the state of the surface. Hydrogen-terminated films exhibit values above 12% at 140 nm, whereas even small amounts of oxygen strongly degrade the QPY. B-doping, at the level of 1500 ppm, has no apparent effect on the photoemission properties. Exposure of the hydrogenated films to ambient conditions results in oxygen adsorption, leading to degradation of the photoemission properties. Analysis of the data within the three-step model of photoemission clearly shows that the state of the surface is a dominant factor determining the QPY. © 1998 American Institute of Physics.
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72.80.Cw Elemental semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.ub Fullerenes and related materials
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Structural and magneto-transport properties of electrodeposited bismuth nanowires

Kai Liu, C. L. Chien, P. C. Searson, and Kui Yu-Zhang

Appl. Phys. Lett. 73, 1436 (1998); http://dx.doi.org/10.1063/1.122378 (3 pages) | Cited 97 times

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Arrays of semimetallic Bi nanowires have been successfully fabricated by electrodeposition. Each nanowire consists of elongated Bi grains along the wire direction. Very large positive magnetoresistance of 300% at low temperatures and 70% at room temperature with quasilinear field dependence has been observed. These features are desirable for wide-range field sensing applications. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
72.20.My Galvanomagnetic and other magnetotransport effects
81.07.-b Nanoscale materials and structures: fabrication and characterization

Forward-transfer laser implantation of pyrene molecules in a solid polymer

D. M. Karnakis, M. Goto, N. Ichinose, S. Kawanishi, and H. Fukumura

Appl. Phys. Lett. 73, 1439 (1998); http://dx.doi.org/10.1063/1.121968 (3 pages) | Cited 4 times

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Excimer laser- (248 nm) induced pyrene implantation in a solid polymer has been investigated in the forward-transfer configuration. Atomic force microscopy provides detailed topological images of the implanted surface, the geometry of which remains mostly unaltered following low-intensity laser radiation in contrast to a laser ablation transfer case. The dopant host polymer thickness appears to strongly influence the efficiency of the process. The experimental results are interpreted on the basis of a thermally activated ejection and implantation mechanism. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
42.62.-b Laser applications

Two distinct dielectric relaxation mechanisms in the low-frequency range in (K0.50Na0.50)2(Sr0.75Ba0.25)4Nb10O30 ceramics

Sangdon Bu, Eunjoo Shin, and Gwangseo Park

Appl. Phys. Lett. 73, 1442 (1998); http://dx.doi.org/10.1063/1.122379 (3 pages) | Cited 1 time

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The effects of space charges on the ferroelectric properties of (K0.50Na0.50)2(Sr0.75Ba0.25)4Nb10O30 ceramics were studied using the ac complex impedance technique. Using our sample, which was aged at room temperature in order to induce a motion of space charges, we observed two dielectric relaxation mechanisms, each having different physical characters in the low-frequency range at temperatures above the Curie point (Tc ∼ 208 °C). One mechanism may be attributed to the hopping process of the space charges bound inside grains, while the other seems to be associated with the space charges at the grain boundary layers. The dielectric measurements were analyzed using equivalent circuits composed of a capacitor (1) connected in series and (2) connected in parallel with a parallelRC circuit. These results were also examined within the framework of a model based on space-charge migration, which was suggested as an essential process for aging. This leads to the conclusion that the two mechanisms are distinct. © 1998 American Institute of Physics.  
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
77.80.B- Phase transitions and Curie point
61.72.Mm Grain and twin boundaries

Effect of surface roughness on the secondary ion yield in ion sputtering

Maxim A. Makeev and Albert-László Barabási

Appl. Phys. Lett. 73, 1445 (1998); http://dx.doi.org/10.1063/1.122170 (3 pages) | Cited 6 times

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There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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