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7 Sep 1998

Volume 73, Issue 10, pp. 1311-1448

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“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong-Hoon Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars

Appl. Phys. Lett. 73, 1370 (1998); http://dx.doi.org/10.1063/1.122164 (3 pages) | Cited 244 times

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We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped (decrease–increase–decrease) temperature dependence of the peak energy (Ep) for InGaN-related PL with increasing temperature: Ep redshifts in the temperature range of 10–70 K, blueshifts for 70–150 K, and redshifts again for 150–300 K with increasing temperature. In addition, when Ep redshifts, the spectral width is observed to narrow, while when Ep blueshifts, it broadens. From a study of the integrated PL intensity as a function of temperature, it is found that thermionic emission of photocarriers out of local potential minima into higher energy states within the wells is the dominant mechanism leading to the thermal quenching of the InGaN-related PL. We demonstrate that the temperature-induced S-shaped PL shift is caused by a change in the carrier dynamics with increasing temperature due to inhomogeneity and carrier localization in the InGaN/GaN MQWs. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
79.40.+z Thermionic emission
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Open-volume defect tails in Ge-implanted Si probed by slow positrons

A. P. Knights, A. Nejim, P. G. Coleman, H. Kheyrandish, and S. Romani

Appl. Phys. Lett. 73, 1373 (1998); http://dx.doi.org/10.1063/1.122165 (3 pages) | Cited 3 times

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Positron annihilation spectroscopy has been used in conjunction with anodic oxidation and etching to profile the distribution of open-volume defects beyond the range of 120 keV Ge ions implanted into (100) Si at a dose of 1×1014 cm−2. For a time-averaged dose rate (Jt) of 0.02 μA/cm−2 and incident angle of 7°, open-volume defects are found to exist at concentrations exceeding 1016 cm−3 at depths up to 600 nm, whereas the peak of the depth distribution of the implanted Ge ions (Rp) is 76 nm, measured using secondary ion mass spectroscopy. An increase in the depth of the defects observed when the implant is intentionally channeled on the 〈100〉 axis is thought to be simply correlated with a corresponding increase in Rp to 79 nm. When the time-averaged current is increased by a factor of 10 (incident angle=7°), defects persist at concentrations in excess of 1017 cm−3 beyond 1 μm and the Rp increases to 101 nm; this extended tail is attributed primarily to increased defect diffusion. © 1998 American Institute of Physics.
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78.70.Bj Positron annihilation
61.72.uf Ge and Si
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation
61.72.-y Defects and impurities in crystals; microstructure
61.80.Jh Ion radiation effects

Spectra analysis of annealed Hg1−xCdxTe molecular beam epitaxial films

Biao Li, Yan Wu, Yongsheng Gui, Hongjuan Ye, Yong Chang, Li He, and Junhao Chu

Appl. Phys. Lett. 73, 1376 (1998); http://dx.doi.org/10.1063/1.122377 (3 pages) | Cited 2 times

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This letter discusses the analysis of infrared and visible spectra of Hg1−xCdxTe thin films deposited by molecular beam epitaxy (MBE) onto a CdTe buffer layer on a GaAs substrate. The spectra were obtained by infrared transmission and spectroscopic ellipsometry. Two mathematical techniques, fast Fourier transform (FFT) of the multiple reflectance spectrum associated with a multilayer system and fractional-derivatives spectra (FDS) were employed. Compared to the conventional fitting procedure, the FFT method directly offers the thickness of individual layers. It can also provide insight into the interfaces. The FDS method, however, gives information of composition and lattice perfection, which is useful in in situ real-time monitoring during the MBE run. The results show that annealing increases the compositional grading of Hg1−xCdxTe MBE films. Furthermore, the crystal microstructure deteriorates due to the irregular arrangement of diffusing atoms in the lattice sites. © 1998 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors

Modulation-doped Cd1−xMnxTe/Cd1−yMgyTe quantum well structures with spatial in-plane profiling of the well width and the doping intensity

T. Wojtowicz, M. Kutrowski, G. Karczewski, and J. Kossut

Appl. Phys. Lett. 73, 1379 (1998); http://dx.doi.org/10.1063/1.122166 (3 pages) | Cited 38 times

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We report on the design and growth by molecular beam epitaxy of two types of graded Cd1−xMnxTe/Cd1−yMgyTe quantum well structures having a precisely controlled spatial profile of either the quantum well width and/or of the number of donors in one of the directions perpendicular to the growth axis. The existence of a spatially varying quantum well width was demonstrated by different wavelengths of the photoluminesce emitted from different regions of the sample. The presence of two-dimensional electron gas with a spatially varying concentration produced by graded modulation doping was evidenced by magneto-optical studies which revealed signatures of either excitons, or negatively charged exciton–electron complexes (X−), or Fermi-edge singularity, all in a single sample grown in one molecular beam epitaxy process. Such structures may be very useful for tunable wavelength radiation sources as well as in detailed studies of various physical characteristics of the quantum wells. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
71.35.-y Excitons and related phenomena
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of the phase inversion in photoreflectance spectra from ZnSe/GaAs(001) heterostructures

J. H. Song, E. D. Sim, S. H. Lee, and S. K. Chang

Appl. Phys. Lett. 73, 1382 (1998); http://dx.doi.org/10.1063/1.122167 (3 pages) | Cited 6 times

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The pump photon energy dependence of photoreflectance (PR) of a ZnSe/GaAs heterostructure has been measured at 77 K. The phase inversion in the PR signal is observed for the pump photon energy when it decreases from above to below the excitonic absorption edge of ZnSe. The observation of the phase inversion in PR is explained in terms of the modulation of the built-in electric field at the interface of the ZnSe/GaAs heterojunction, not at the ZnSe surface. It provides evidence of a built-in triangular-well potential and of hole traps at the ZnSe/GaAs interface. This argument is confirmed by photoreflectance excitation spectroscopy. © 1998 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
71.55.Eq III-V semiconductors
71.55.Gs II-VI semiconductors
78.66.Fd III-V semiconductors

Changes in the electronic structure of CuInS2 thin films by Na incorporation

Koichi Fukuzaki, Shigemi Kohiki, Hideki Yoshikawa, Sei Fukushima, Takayuki Watanabe, and Isao Kojima

Appl. Phys. Lett. 73, 1385 (1998); http://dx.doi.org/10.1063/1.122168 (3 pages) | Cited 11 times

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For Na-free and Cu-deficient CuInS2 thin films with chalcopyrite structure, electron spectra of core levels and valence band were similar to each other in spite of a difference in Cu deficiency. Incorporation of Na with the CuInS2 films caused peak shifts by −0.5 eV for the core levels without changes in both linewidth and shape. The electron density of states, deeper by 1–5 eV than that from Cu d–S p hybridization centered at around 2.5 eV, increased by the Na incorporation, and increments in the electron density of states were larger for the films with larger the Cu deficiency. The Na incorporation yielded a surface layer expressed as (Na,Cu)InS2 on the Cu deficient CuInS2 films. © 1998 American Institute of Physics.
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71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Localized excitonic emissions of ZnCdSe/ZnSe quantum wells grown on a GaAs(110) cleaved surface

Hyun-Chul Ko, Doo-Cheol Park, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, and Yang-Soo Kim

Appl. Phys. Lett. 73, 1388 (1998); http://dx.doi.org/10.1063/1.121953 (3 pages) | Cited 6 times

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Anomalous optical properties of Zn1−xCdxSe/ZnSe strained-layer single quantum wells (SQWs) fabricated on cleaved GaAs(110) surfaces in ultrahigh vacuum by molecular beam epitaxy have been investigated. From the temperature-dependent photoluminescence measurement, the origins of localized excitonic emissions of two kinds of SQW structures with different Cd compositions are suggested. Localization centers of SQWs with low Cd composition (14%) are mainly originated by the well thickness fluctuation. However, SQWs with high Cd composition (27%) showed localized excitonic emissions at low temperature due to the Cd composition fluctuations rather than the lack of thickness uniformity of the well layer. Estimated averaged depths of localization of excitons by model calculations are 9 and 14 meV for the wells with 14% and 27% Cd compositions, respectively. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.20.At Surface states, band structure, electron density of states
78.66.Hf II-VI semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.Fz Weak or Anderson localization
78.55.Et II-VI semiconductors

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong, S. J. Cai, R. Li, Kang Wang, H. W. Jiang, and Mary Chen

Appl. Phys. Lett. 73, 1391 (1998); http://dx.doi.org/10.1063/1.121954 (3 pages) | Cited 39 times

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We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov–de Hass oscillations, a carrier effective mass of m∗ = 0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012 cm−2, only the lowest subband in the quantum well is occupied. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.43.-f Quantum Hall effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2

P. R. Willmott and F. Antoni

Appl. Phys. Lett. 73, 1394 (1998); http://dx.doi.org/10.1063/1.121955 (3 pages) | Cited 12 times

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Wurtzitic GaN films were grown by reactive crossed-beam pulsed laser deposition at 248 nm (KrF) using a liquid Ga target and a synchronous N2 pulse on atomically flat, initially two domain 2×1 reconstructed Si(001) substrates. The films were (0001) single phase for substrate temperatures between 200 and 700 °C, and also grew in a twinned epitaxial manner with the crystallites oriented parallel to the [110] and [110] in-plane directions of the Si(001) substrate between 550 and 700 °C. Above 700 °C, no GaN could be detected and only Ga liquid films were produced. The films were subsequently investigated ex situ by x-ray diffraction, reflection high-energy electron diffraction, and photoluminescence. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors

Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

Wen-Chau Liu, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, and Yung-Hsin Shie

Appl. Phys. Lett. 73, 1397 (1998); http://dx.doi.org/10.1063/1.121956 (3 pages) | Cited 8 times

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An In0.5Ga0.5P/GaAs double heterojunction bipolar transistor with a δ-doped wide-gap collector structure has been fabricated and studied. Experimental results show that this device exhibits the advantages of a small offset voltage of 50 mV, a small saturation voltage of 1 V, and a large breakdown voltage of 20 V with a current gain of 20. These good characteristics are mainly due to the complete elimination of potential spike at emitter–base and base–collector heterojunctions. Consequently, the studied device shows a good promise for high-speed, high-power, lower-power consumption and large input signal circuit applications. © 1998 American Institute of Physics.
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85.30.Pq Bipolar transistors
77.22.Jp Dielectric breakdown and space-charge effects
73.61.Ey III-V semiconductors

Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals

R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks

Appl. Phys. Lett. 73, 1400 (1998); http://dx.doi.org/10.1063/1.122169 (3 pages) | Cited 13 times

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We present a study of time-resolved photoluminescence (TRPL) measurements of n-type CdTe single crystals doped by a novel procedure. The measurements show that the surface recombination velocity of low doped n-type (n0 = 1.5×1016 cm−3) samples was below 200 cm/s and the nonradiative bulk recombination time was around 180 ns. By conducting the TRPL measurements under different carrier injection levels, it was found that radiative bulk recombination was the dominant mechanism in the low doped crystals. This enabled us to obtain the bulk radiative recombination rate constant, B, which was found to be 3±0.5×10−9 cm3 s−1. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
78.55.Et II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures

Q. Chen, M. Blasingame, and C. Faber

Appl. Phys. Lett. 73, 1403 (1998); http://dx.doi.org/10.1063/1.121957 (3 pages)

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The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices

Lattice location of Si in ion implanted GaN

H. Kobayashi and W. M. Gibson

Appl. Phys. Lett. 73, 1406 (1998); http://dx.doi.org/10.1063/1.121958 (3 pages) | Cited 24 times

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The lattice location of Si in GaN has been investigated by ion channeling in combination with Rutherford backscattering spectrometry, particle induced x-ray emission, and nuclear reaction analysis. Metalorganic chemical vapor deposition grown GaN on c-plane sapphire substrates and implanted with 28Si at a dose of 7×1014 cm−2 with postimplant annealing were investigated. It was found that almost 100% of Si goes into the Ga site at 1100 °C. Our results directly indicate that the electrical activation of Si implanted GaN with postimplant annealing is due to the formation of substitutional Si at this temperature. © 1998 American Institute of Physics.
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61.72.S- Impurities in crystals
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin

Appl. Phys. Lett. 73, 1409 (1998); http://dx.doi.org/10.1063/1.121959 (3 pages) | Cited 66 times

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We report direct-backscattering Raman studies of GaAs1−xNx alloys, for x ⩽ 0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm−1 is found to red shift at a rate of −136±10 cm−1/x. This is well described by the combined effects of strain and alloying. The GaN-like phonon near 470 cm−1 is observed to increase in intensity in direct proportion to x, and to systematically blue shift at a rate of 197±10 cm−1/x. This blue shift is likewise attributed to strain and alloying. The GaAs-like second-order features are also seen to broaden slightly and diminish in intensity with increasing nitrogen concentration. These results are attributed to a weak breakdown in the zincblende-crystal long-range order, possibly related to the presence of ordered domains within the random alloy. © 1998 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors

Large periodic potential under lateral surface superlattices fabricated from heteroepitaxial stressor layers

C. J. Emeleus, B. Milton, A. R. Long, J. H. Davies, D. E. Petticrew, and M. C. Holland

Appl. Phys. Lett. 73, 1412 (1998); http://dx.doi.org/10.1063/1.121960 (3 pages) | Cited 7 times

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We have fabricated lateral surface superlattices by etching a strained layer of In0.2Ga0.8As near the surface of a heterostructure. This provides strong modulation of the electron gas while retaining a high electron mobility. The potential arises mainly from strain and the piezoelectric effect, which depends on orientation, and from the change in the surface profile. The fundamental components of these two contributions cancel in one orientation to leave a dominant second harmonic. This effectively halves the period of the superlattice from its lithographic value and provides a promising technique for creating potentials with a period comparable to the Fermi wavelength. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Cf Surface cleaning, etching, patterning
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors

Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substrates

A. Polimeni, M. Henini, A. Patanè, L. Eaves, P. C. Main, and G. Hill

Appl. Phys. Lett. 73, 1415 (1998); http://dx.doi.org/10.1063/1.121961 (3 pages) | Cited 23 times

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We have studied the optical properties of (InGa)As self-assembled quantum dots grown on (311)B-oriented GaAs substrates. The luminescence linewidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in (311)B. In order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (100) to the (311)B devices. © 1998 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors

Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing

I. E. Tyschenko, L. Rebohle, R. A. Yankov, W. Skorupa, and A. Misiuk

Appl. Phys. Lett. 73, 1418 (1998); http://dx.doi.org/10.1063/1.121962 (3 pages) | Cited 9 times

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We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO2 films irradiated with Si+ ions using double-energy implants at 100 and 200 keV and ion doses ranging from 1.2×1016 to 6.3×1016 cm−2. Postimplantation anneals have been carried out in an Ar ambient at temperatures Ta of 400 and 450 °C for 10 h at both atmospheric pressure and hydrostatic pressures of 0.1, 10, 12, and 15 kbar. It has been found that the intensity of the ultraviolet (∼360 nm), blue (∼460 nm), and red (∼600 nm) PL emission bands increases with raising hydrostatic pressure whereby the PL peaks retain their wavelength positions. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centers and small Si clusters within metastable regions of the ion-implanted SiO2. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Cc Kinetics of defect formation and annealing
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model

Lourdes Pelaz, G. H. Gilmer, M. Jaraiz, S. B. Herner, H.-J. Gossmann, D. J. Eaglesham, G. Hobler, C. S. Rafferty, and J. Barbolla

Appl. Phys. Lett. 73, 1421 (1998); http://dx.doi.org/10.1063/1.121963 (3 pages) | Cited 32 times

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The influence of ion mass on transient enhanced diffusion (TED) and defect evolution after ion implantation in Si has been studied by atomistic simulation and compared with experiments. We have analyzed the TED induced by B, P, and As implants with equal range and energy: TED increases with ion mass for equal range implants, and species of different mass but equal energy cause approximately the same amount of TED. Heavier ions produce a larger redistribution of the Si atoms in the crystal, leading to a larger excess of interstitials deeper in the bulk and an excess of vacancies closer to the surface. For high-mass ions more interstitials escape recombination with vacancies, are stored in clusters, and then contribute to TED. TED can be described in terms of an effective “+n” or “plus factor” that increases with the implanted ion mass. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
66.30.J- Diffusion of impurities
72.80.Cw Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters

Iron solubility in highly boron-doped silicon

S. A. McHugo, R. J. McDonald, A. R. Smith, D. L. Hurley, and E. R. Weber

Appl. Phys. Lett. 73, 1424 (1998); http://dx.doi.org/10.1063/1.121964 (3 pages) | Cited 26 times

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We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100 °C in silicon doped with either 1.5×1019 or 6.5×1014 boron atoms/cm3. We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800 °C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. © 1998 American Institute of Physics.
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64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals
81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors

Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC

Hisayoshi Itoh, Thomas Troffer, Christian Peppermuller, and Gerhard Pensl

Appl. Phys. Lett. 73, 1427 (1998); http://dx.doi.org/10.1063/1.121965 (3 pages) | Cited 14 times

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The influence of co-implantation of C or Si ions on the electrical activation of B acceptors in 4H–SiC was studied by using Hall effect and photoluminescence (PL) investigations. The free hole concentration in B-implanted layers is found to increase due to co-implantation of C and to decrease owing to Si co-implantation. Hot co-implantation of C at 800 °C gives rise to a further increase of the free hole concentration. It is found that the intensity of the PL peak at a wavelength 383.9 nm, which arises from shallow B acceptors [Sridhara et al., Mater. Sci. Forum 264–268, 461 (1998)], is enhanced by the coimplantation of C. These results demonstrate that the electrical properties of B-implanted p-type layers are improved by C co-implantation. The mechanisms, which alter the electrical activation of implanted B atoms due to co-implantation of C or Si, are discussed. © 1998 American Institute of Physics.
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61.72.up Other materials
61.80.Jh Ion radiation effects
71.55.Ht Other nonmetals
72.20.My Galvanomagnetic and other magnetotransport effects
78.55.Hx Other solid inorganic materials
72.80.Jc Other crystalline inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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