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28 Sep 1998

Volume 73, Issue 13, pp. 1757-1915

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Structural and optical properties of pseudomorphic InxGa1−xN alloys

L. T. Romano, B. S. Krusor, M. D. McCluskey, D. P. Bour, and K. Nauka

Appl. Phys. Lett. 73, 1757 (1998); http://dx.doi.org/10.1063/1.122272 (3 pages) | Cited 34 times

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Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x = 0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1−xN/GaN interface. Composition of the overlayers was determined by Rutherford backscattering spectrometry and correlated to both the a and c lattice constants from XRD. It was found that Vegard’s law is applicable at these compositions, if the biaxial strain is included. Biaxial strain must also be considered to accurately determine the bowing parameter as shown by optical transmission measurements. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
78.66.Fd III-V semiconductors
68.60.Bs Mechanical and acoustical properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
78.40.Fy Semiconductors

Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance

P. Wisniewski, W. Knap, J. P. Malzac, J. Camassel, M. D. Bremser, R. F. Davis, and T. Suski

Appl. Phys. Lett. 73, 1760 (1998); http://dx.doi.org/10.1063/1.122273 (3 pages) | Cited 22 times

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We report an investigation, performed in the full composition range x = 0–1, of the change in infrared reflectivity spectra of AlxGa1−xN layers deposited on 6H–SiC substrates. We have found two different transverse E1(TO) phonon frequencies that can be assigned to AlN-like and GaN-like modes. The composition dependences of these frequencies can be well approximated by linear functions and the oscillator strengths scale like the corresponding Al and Ga mole fractions, respectively. On a purely experimental basis, this establishes evidence of a two-mode behavior for this controversial alloy system. The frequencies of the impurity mode of Ga in AlN (622 cm−1) and of the impurity mode of Al in GaN (643 cm−1) were determined. © 1998 American Institute of Physics.
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63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Femtosecond laser-induced three-dimensional bright and long-lasting phosphorescence inside calcium aluminosilicate glasses doped with rare earth ions

Jianrong Qiu, K. Miura, H. Inouye, Y. Kondo, T. Mitsuyu, and K. Hirao

Appl. Phys. Lett. 73, 1763 (1998); http://dx.doi.org/10.1063/1.122274 (3 pages) | Cited 74 times

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We report on a novel phenomenon in calcium aluminosilicate glasses doped with Ce3+, Tb3+, and Pr3+. After irradiation by an 800 nm femtosecond pulsed laser, the focused part of the laser in the glasses emits bright and long-lasting phosphorescence able to be clearly seen with the naked eye in the dark even one hour after the removal of the activating laser. Moreover, by selecting appropriate glass compositions and species of rare earth ions, optional three-dimensional image patterns emitting long-lasting phosphorescence in various colors, including blue, green, and red, can be formed within glass samples by moving the focal point of the laser. Based on absorption spectra, the long-lasting phosphorescence is considered to be due to the thermostimulated recombination of holes and electrons at traps induced by the laser irradiation, which leave holes or electrons in a metastable excited state at room temperature. © 1998 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics
71.55.Jv Disordered structures; amorphous and glassy solids

Using printing and molding techniques to produce distributed feedback and Bragg reflector resonators for plastic lasers

John A. Rogers, Martin Meier, and Ananth Dodabalapur

Appl. Phys. Lett. 73, 1766 (1998); http://dx.doi.org/10.1063/1.122275 (3 pages) | Cited 37 times

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We describe the use of low cost printing and molding techniques to fabricate distributed feedback and Bragg reflector resonators for photoexcited plastic lasers that have narrow emission profiles in the visible range. The good performance of the lasers demonstrates the suitability of these techniques for fabricating certain types of functional optoelectronic devices that require submicron features patterned over macroscopic areas. © 1998 American Institute of Physics.
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42.60.By Design of specific laser systems
42.70.Hj Laser materials
85.40.Hp Lithography, masks and pattern transfer
42.55.Rz Doped-insulator lasers and other solid state lasers

Fluorescence lifetime three-dimensional microscopy with picosecond precision using a multifocal multiphoton microscope

M. Straub and S. W. Hell

Appl. Phys. Lett. 73, 1769 (1998); http://dx.doi.org/10.1063/1.122276 (3 pages) | Cited 42 times

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The combination of pulsed-mode excitation multifocal multiphoton microscopy with a high-repetition, time-gated intensified CCD camera enables efficient three-dimensional (3D) fluorescence lifetime imaging. With a 200-ps gate opening at 76 MHz repetition rate, fluorescence decay can be traced in a sequence of images with varying delays between pulse and gate. Fluorophore lifetimes are measured with a precision of a few picoseconds. As an application we show that, upon two-photon excitation at 800 nm, certain pollen samples feature a multiexponential fluorescence relaxation. Our results indicate that efficient four-dimensional microscopy with hundreds of nanometer spatial and tens of picoseconds temporal resolution is within reach. © 1998 American Institute of Physics.
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87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.80.-y Biophysical techniques (research methods)
07.60.Pb Conventional optical microscopes
06.60.Jn High-speed techniques (microsecond to femtosecond)

Improved Mg-doped GaN films grown over a multilayered buffer

Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, and Wen Wang

Appl. Phys. Lett. 73, 1772 (1998); http://dx.doi.org/10.1063/1.122277 (3 pages) | Cited 8 times

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Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1−xN (0<x ⩽ 1) superlattice-like layer structures although the material combination as well as the periodicity and uniformity in layer thickness and composition are not essential issues for constituting a MLB. It was found that the p-GaN films grown on MLBs gave much stronger optical emission than those grown on conventional GaN or AlxGa1−xN (0<x ⩽ 1) single-layer buffer or GaN/AlxGa1−xN double-layer buffer under identical reactor configuration. This fact indicates that, by using the newly-developed MLB, the crystalline quality of group-III nitride-based-semiconductor epitaxial layers can be significantly improved. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Local tuning of organic light-emitting diode color by dye droplet application

T. R. Hebner and J. C. Sturm

Appl. Phys. Lett. 73, 1775 (1998); http://dx.doi.org/10.1063/1.122278 (3 pages) | Cited 38 times

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We have demonstrated that fluorescent dyes may be introduced into previously fabricated polymer thin films by local application of a dye-containing droplet. The UV fluorescence spectra of the films and the spectra of organic light-emitting diodes made from these films can be successfully tuned by this method. The technique has been implemented by ink-jet printing of the dye droplet. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics

Absolute frequency stabilization of two diode-pumped Er–Yb:glass lasers to the acetylene P(15) line at 1534 nm

C. Svelto, E. Bava, S. Taccheo, and P. Laporta

Appl. Phys. Lett. 73, 1778 (1998); http://dx.doi.org/10.1063/1.122279 (3 pages) | Cited 3 times

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Two identical diode-pumped bulk Er–Yb:glass lasers, operating at 1534-nm wavelength, have been independently locked to the P(15) rovibrational line of the acetylene molecule by the FM sideband technique. Measurements of the beat note between the two lasers show a long-term frequency stability of 170 kHz over a 1-h period and a short-term laser linewidth below 50 kHz over 1 ms. The Allan standard deviation of the beat frequency was measured yielding values below 10−10 for integration times between 10 ms and 1 s, reaching the 4×10−11 level at 0.1 s. © 1998 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

CdS photoluminescence inhibition by a photonic structure

A. Blanco, C. López, R. Mayoral, H. Míguez, F. Meseguer, A. Mifsud, and J. Herrero

Appl. Phys. Lett. 73, 1781 (1998); http://dx.doi.org/10.1063/1.122280 (3 pages) | Cited 81 times

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Here we present experimental evidence of the strong modification of the CdS photoluminescence when it is embedded in a SiO2 colloidal photonic crystal. When the emitted light matches a forbidden photonic band in the matrix, inhibition of the semiconductor photoluminescence is achieved. In this work we prove the effective control of this effect by means of the photonic lattice parameter of the host. CdS was grown by chemical bath deposition and its quality has been checked employing Raman spectroscopy and x-ray diffraction. Scanning electron microscopy is used to study the morphology of the composite. © 1998 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.70.Dd Colloids

Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

M. K. Zundel, N. Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter

Appl. Phys. Lett. 73, 1784 (1998); http://dx.doi.org/10.1063/1.122281 (3 pages) | Cited 29 times

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Red-light-emitting quantum dot injection lasers have been prepared by solid-source molecular beam epitaxy. The separate confinement heterostructure contains densely stacked layers of self-assembled InP quantum dots embedded in Ga0.51In0.49P waveguide and Si/Be-doped Al0.53In0.47P cladding layers. Edge-emitting laser diodes are processed, which show quantum dot lasing at 90 K. Thereby, the threshold current density is 172 A/cm2. The energy of the laser line is at 1.757 eV, which is very close to the peak energy of subthreshold electroluminescence. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

A photonic switch based on a gigantic, reversible optical nonlinearity of liquefying gallium

P. J. Bennett, S. Dhanjal, P. Petropoulos, D. J. Richardson, N. I. Zheludev, and V. I. Emelyanov

Appl. Phys. Lett. 73, 1787 (1998); http://dx.doi.org/10.1063/1.122282 (3 pages) | Cited 16 times

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Liquefying gallium shows a huge reversible optical nonlinearity which is compatible with waveguide technology and promises to be a breakthrough in broadband, light-by-light modulation at milliwatt operating power levels and frequency band spanning up to several hundred kilohertz. © 1998 American Institute of Physics.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism

Jia-Yu Zhang, Xi-Mao Bao, Yong-Hong Ye, and Xi-Lin Tan

Appl. Phys. Lett. 73, 1790 (1998); http://dx.doi.org/10.1063/1.122283 (3 pages) | Cited 26 times

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Under violet excitation, a strong blue band and a broad red band are emitted simultaneously from the Ge nanocrystal embedded SiO2 films fabricated by Ge+ implantation and annealing. The blue band exhibits a complex annealing behavior, and the photoluminescence excitation spectral analysis indicates that it results from a combination of several implantation-induced deficient centers. The peak position of the red band shifts from 600 to 640 nm when the mean size of Ge nanocrystals increases from 4.3 to 6.7 nm, suggesting that the red band comes from the radiative recombination of excitons confined in Ge nanocrystals. © 1998 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

D. Sun, D. W. Treat, K. Beernink, R. D. Bringans, and G. J. Kovacs

Appl. Phys. Lett. 73, 1793 (1998); http://dx.doi.org/10.1063/1.122284 (3 pages) | Cited 5 times

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We report red and infrared quantum well (QW) semiconductor lasers integrated on a GaAs substrate by etching and regrowth. A separate confinement heterostructure infrared laser containing an In0.15Al0.15Ga0.7As/Al0.4Ga0.6As QW with AlInP cladding layers was grown on a GaAs substrate. The wafer was then patterned with stripes of etch masks and was etched back to the substrate. A Ga0.4In0.6P/(AlGa)0.5In0.5P QW separate confinement heterostructure laser was subsequently grown side by side with the infrared laser structure. Independently addressable dual-wavelength lasers of 50 μm spacing were fabricated by forming 4 μm wide buried ridge waveguides. The dual-wavelength lasers operated in threshold currents of 10 mA at a peak wavelength of 835 nm and 20 mA at a peak wavelength of 670 nm.© 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.65.Cf Surface cleaning, etching, patterning
42.82.Et Waveguides, couplers, and arrays

The physics of negative differential resistance of an intracavity voltage-controlled absorber in a vertical-cavity surface-emitting laser

Janice A. Hudgings, Robert J. Stone, Sui F. Lim, Gabriel S. Li, Wupen Yuen, Kam Y. Lau, and Connie J. Chang-Hasnain

Appl. Phys. Lett. 73, 1796 (1998); http://dx.doi.org/10.1063/1.122285 (3 pages) | Cited 10 times

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We have constructed a vertical-cavity, surface-emitting laser with a voltage-controlled quantum well absorber in the upper mirror stack. If the lasing wavelength of this device is designed to be slightly longer than the absorber band edge, sharp negative differential resistance can be obtained in the absorber under lasing conditions. We present strong experimental evidence that this behavior arises from redshifting of the absorption excitonic peak due to the quantum confined Stark effect. Design criteria are proposed for applications including high speed modulation and self-pulsation. © 1998 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Bq Design and performance testing of integrated-optical systems
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
73.50.Fq High-field and nonlinear effects
71.35.-y Excitons and related phenomena
42.79.Hp Optical processors, correlators, and modulators
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
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Behavior of negative ions and aggregation process of particle growth in silane plasma

K. Satake, Y. Inoue, O. Ukai, and Y. Takeuchi

Appl. Phys. Lett. 73, 1799 (1998); http://dx.doi.org/10.1063/1.122286 (3 pages)

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Particle formation processes in silane plasma have been studied by means of ab initio molecular orbital method and the Derjaguin–Landau–Verway–Overbeek (DLVO) theory. The results from a quantitative comparison between the Si–H bonding energy of negative species and that of neutral ones suggested the presence of the polymerization pathways via negative species. The DLVO theory has been applied to calculate the interaction potential energy between the charged particles. It was found that the heterogeneous aggregation accelerates the particle growth. © 1998 American Institute of Physics.
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52.25.Vy Impurities in plasmas
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
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Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope

Facundo Ruiz, W. D. Sun, Fred H. Pollak, and Chandra Venkatraman

Appl. Phys. Lett. 73, 1802 (1998); http://dx.doi.org/10.1063/1.122287 (3 pages) | Cited 38 times

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Amorphous “diamond-like/quartz-like” composites a-(C:H/Si:O) constitute a novel class of diamond-related materials with a number of unique bulk and surface properties. Using a thermal imaging microscope we have determined the thermal conductivity (κs) of a-(C:H/Si:O) films deposited on Si(001) substrates. We have developed a calibration procedure which makes it possible to use this method for the evaluation of not only topographical variations in κs but also absolute values. © 1998 American Institute of Physics.
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61.43.Er Other amorphous solids
61.46.-w Structure of nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.60.Dv Thermal stability; thermal effects

Temperature dependence of deformation-assisted crystallization in amorphous Fe78B13Si9

J. Xu and M. Atzmon

Appl. Phys. Lett. 73, 1805 (1998); http://dx.doi.org/10.1063/1.122288 (3 pages) | Cited 21 times

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Low-energy ball milling of amorphous Fe78B13Si9 has been performed at temperatures between 25 and 250 °C. Primary crystallization is observed after milling at elevated temperatures, but not after annealing at the same temperatures. Although milling at room temperature creates nucleation sites for primary crystallization, subsequent annealing at elevated temperature does not result in significant crystallization. Heating by ball impact and contamination by the milling tools during milling are ruled out as the causes for crystallization. The observed behavior is interpreted to be caused by diffusivity enhancement due to milling-produced defects. © 1998 American Institute of Physics.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
61.43.Fs Glasses
81.20.Wk Machining, milling
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Field emission properties of GaN films on Si(111)

I. Berishev, A. Bensaoula, I. Rusakova, A. Karabutov, M. Ugarov, and V. P. Ageev

Appl. Phys. Lett. 73, 1808 (1998); http://dx.doi.org/10.1063/1.122289 (3 pages) | Cited 27 times

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GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was determined to be close to 100 nm in diameter. Despite the large defect density, a strong room temperature photoluminescence signal with a full width at half maximum of 138 meV was observed from these samples. The surface exhibited random array of sharp tips at the microscopic level with about 5×109 tips/cm2 density. The field emission characteristics of the as-grown thin films were measured, and a threshold electric field as low as 30–40 V/μm and an emission current density of more than 100 mA/cm2 were obtained. © 1998 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Surface morphological structures in ultra-high-dose self-implanted silicon

Xianfang Zhu, J. S. Williams, and J. C. McCallum

Appl. Phys. Lett. 73, 1811 (1998); http://dx.doi.org/10.1063/1.122290 (3 pages) | Cited 1 time

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In this letter, we report the observation of intriguing, implantation-induced surface morphological structures in Si. Experimental evidence indicates that an extremely rough surface can occur when ultra-high-dose ( ∼ 1018 cm−2) self-implantation is performed on a partially preamorphized Si wafer within a temperature range from 175 to 250 °C. However, the same implantation into crystalline or completely amorphized Si does not produce such surface structures. Characteristics of the structures and their temperature dependence suggest a possible mechanism for their evolution. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters

Second-harmonic imaging of ferroelectric domain walls

Sergey I. Bozhevolnyi, Jørn M. Hvam, Kjeld Pedersen, Fredrik Laurell, Håkan Karlsson, Torben Skettrup, and Michele Belmonte

Appl. Phys. Lett. 73, 1814 (1998); http://dx.doi.org/10.1063/1.122291 (3 pages) | Cited 26 times

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Domain walls in periodically poled ferroelectric KTiOPO4 and LiNbO3 crystals are observed by making use of second-harmonic (SH) generation enhancement in the transition regions between neighboring domains. SH images of domain walls obtained with various samples for different polarization configurations are presented. The SH generation enhancement is found especially pronounced for the polarization of the SH radiation being perpendicular to the domain walls. The origin and selection rules for the contrast in SH images of domain walls are discussed. The results obtained suggest that the domain walls produce a deteriorating effect on SH generation by quasiphase matching. © 1998 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.22.Ej Polarization and depolarization

Single laser beam-induced surface deformation on azobenzene polymer films

S. Bian, L. Li, J. Kumar, D. Y. Kim, J. Williams, and S. K. Tripathy

Appl. Phys. Lett. 73, 1817 (1998); http://dx.doi.org/10.1063/1.122292 (3 pages) | Cited 57 times

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The surface deformation induced by a Gaussian laser beam on azobenzene polymer film reveals strong polarization dependence and establishes that an optical field component in the direction of the intensity gradient is essential for the deformation process. The experimental results allow us to infer the phase relationship between the surface relief gratings and the writing interference pattern. © 1998 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.70.Jk Polymers and organics

Synchrotron x-ray microbeam diagnostics of combinatorial synthesis

E. D. Isaacs, M. Marcus, G. Aeppli, X.-D. Xiang, X.-D. Sun, P. Schultz, H.-K. Kao, G. S. Cargill, and R. Haushalter

Appl. Phys. Lett. 73, 1820 (1998); http://dx.doi.org/10.1063/1.122293 (3 pages) | Cited 28 times

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X-ray microbeam techniques (spot size=3×20 μm2) have been applied to characterize the composition and structure of rare earth activated Gd(La, Sr)AlO3 phosphor thin films grown by combinatorial synthesis. Using x-ray fluorescence, x-ray diffraction and near-edge x-ray absorption spectroscopy, we have measured the chemical composition, crystallographic structure, and valence state of the rare earth activator atom Eu. These measurements represent the direct application of x-ray techniques to solid-state materials prepared by combinatorial synthesis and demonstrate the power of x-ray microbeam analysis to nondestructively characterize as-grown combinatorial libraries. © 1998 American Institute of Physics.
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82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
78.70.Dm X-ray absorption spectra
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
78.66.Nk Insulators
61.66.Fn Inorganic compounds

Electric fatigue in sol–gel prepared Pb(Zr,Sn,Ti)NbO3 thin films

Jae Hyuk Jang, Ki Hyun Yoon, and Hyun Jung Shin

Appl. Phys. Lett. 73, 1823 (1998); http://dx.doi.org/10.1063/1.122294 (3 pages) | Cited 19 times

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The fatigue properties of the sol–gel derived Pb0.99[(Zr0.6Sn0.4)1−XTiX]0.98Nb0.02O3 (40/100X/2) thin films deposited on platinized silicon substrates were investigated as a function of Ti content (0.03 ⩽ X ⩽ 0.15). With an increase of Ti content X, the antiferroelectric phase was transformed to the ferroelectric phase and the degradation of polarization under the repetitive switching was increased. This behavior should be closely related to the fact that the antiferroelectric phase contains mainly 180° domains, which have smaller internal stresses during switching than those of 90° domains. The difference of nanoscale domain structure between the antiferroelectric and ferroelectric thin films was confirmed by scanning force microscopy. © 1998 American Institute of Physics.  
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Optical switches of gadolinium–magnesium multilayers

P. van der Sluis

Appl. Phys. Lett. 73, 1826 (1998); http://dx.doi.org/10.1063/1.122295 (3 pages) | Cited 17 times

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It is shown that Pd-coated multilayers built from alternating Gd and Mg layers go through an optical transition by variation of the hydrogen concentration. The multilayer structure is preserved during switching. The optical properties of these stacks are comparable to those of the Pd-coated GdMg alloys. By selecting appropriate multilayer periods, faster switches can be built when compared to alloys with a comparable Mg content. © 1998 American Institute of Physics.
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78.66.Bz Metals and metallic alloys
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices

Shinji Okamoto, Yoshihiko Kanemitsu, Kyu Sung Min, and Harry A. Atwater

Appl. Phys. Lett. 73, 1829 (1998); http://dx.doi.org/10.1063/1.122296 (3 pages) | Cited 22 times

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We have fabricated GaAs nanocrystals by means of Ga+ and As+ co-implantation into SiO2 matrices and applied selective excitation spectroscopy to clarify the origin of photoluminescence (PL) from GaAs nanocrystals in SiO2 matrices. Under blue laser excitation, broad PL spectra with multipeaks are observed in the visible spectral region. Under selective excitation at energies within a certain band, fine structures are observed at low temperatures and the size-dependent PL structures are attributed to quantum confinement states in GaAs nanocrystals. The origin of visible PL from GaAs/SiO2 nanocomposites is discussed. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
61.46.-w Structure of nanoscale materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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