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28 Sep 1998

Volume 73, Issue 13, pp. 1757-1915

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Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope

Facundo Ruiz, W. D. Sun, Fred H. Pollak, and Chandra Venkatraman

Appl. Phys. Lett. 73, 1802 (1998); http://dx.doi.org/10.1063/1.122287 (3 pages) | Cited 38 times

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Amorphous “diamond-like/quartz-like” composites a-(C:H/Si:O) constitute a novel class of diamond-related materials with a number of unique bulk and surface properties. Using a thermal imaging microscope we have determined the thermal conductivity (κs) of a-(C:H/Si:O) films deposited on Si(001) substrates. We have developed a calibration procedure which makes it possible to use this method for the evaluation of not only topographical variations in κs but also absolute values. © 1998 American Institute of Physics.
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61.43.Er Other amorphous solids
61.46.-w Structure of nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.60.Dv Thermal stability; thermal effects

Temperature dependence of deformation-assisted crystallization in amorphous Fe78B13Si9

J. Xu and M. Atzmon

Appl. Phys. Lett. 73, 1805 (1998); http://dx.doi.org/10.1063/1.122288 (3 pages) | Cited 21 times

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Low-energy ball milling of amorphous Fe78B13Si9 has been performed at temperatures between 25 and 250 °C. Primary crystallization is observed after milling at elevated temperatures, but not after annealing at the same temperatures. Although milling at room temperature creates nucleation sites for primary crystallization, subsequent annealing at elevated temperature does not result in significant crystallization. Heating by ball impact and contamination by the milling tools during milling are ruled out as the causes for crystallization. The observed behavior is interpreted to be caused by diffusivity enhancement due to milling-produced defects. © 1998 American Institute of Physics.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
61.43.Fs Glasses
81.20.Wk Machining, milling
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Field emission properties of GaN films on Si(111)

I. Berishev, A. Bensaoula, I. Rusakova, A. Karabutov, M. Ugarov, and V. P. Ageev

Appl. Phys. Lett. 73, 1808 (1998); http://dx.doi.org/10.1063/1.122289 (3 pages) | Cited 27 times

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GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was determined to be close to 100 nm in diameter. Despite the large defect density, a strong room temperature photoluminescence signal with a full width at half maximum of 138 meV was observed from these samples. The surface exhibited random array of sharp tips at the microscopic level with about 5×109 tips/cm2 density. The field emission characteristics of the as-grown thin films were measured, and a threshold electric field as low as 30–40 V/μm and an emission current density of more than 100 mA/cm2 were obtained. © 1998 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Surface morphological structures in ultra-high-dose self-implanted silicon

Xianfang Zhu, J. S. Williams, and J. C. McCallum

Appl. Phys. Lett. 73, 1811 (1998); http://dx.doi.org/10.1063/1.122290 (3 pages) | Cited 1 time

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In this letter, we report the observation of intriguing, implantation-induced surface morphological structures in Si. Experimental evidence indicates that an extremely rough surface can occur when ultra-high-dose ( ∼ 1018 cm−2) self-implantation is performed on a partially preamorphized Si wafer within a temperature range from 175 to 250 °C. However, the same implantation into crystalline or completely amorphized Si does not produce such surface structures. Characteristics of the structures and their temperature dependence suggest a possible mechanism for their evolution. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.43.Dq Amorphous semiconductors, metals, and alloys
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.72.J- Point defects and defect clusters

Second-harmonic imaging of ferroelectric domain walls

Sergey I. Bozhevolnyi, Jørn M. Hvam, Kjeld Pedersen, Fredrik Laurell, Håkan Karlsson, Torben Skettrup, and Michele Belmonte

Appl. Phys. Lett. 73, 1814 (1998); http://dx.doi.org/10.1063/1.122291 (3 pages) | Cited 26 times

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Domain walls in periodically poled ferroelectric KTiOPO4 and LiNbO3 crystals are observed by making use of second-harmonic (SH) generation enhancement in the transition regions between neighboring domains. SH images of domain walls obtained with various samples for different polarization configurations are presented. The SH generation enhancement is found especially pronounced for the polarization of the SH radiation being perpendicular to the domain walls. The origin and selection rules for the contrast in SH images of domain walls are discussed. The results obtained suggest that the domain walls produce a deteriorating effect on SH generation by quasiphase matching. © 1998 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.22.Ej Polarization and depolarization

Single laser beam-induced surface deformation on azobenzene polymer films

S. Bian, L. Li, J. Kumar, D. Y. Kim, J. Williams, and S. K. Tripathy

Appl. Phys. Lett. 73, 1817 (1998); http://dx.doi.org/10.1063/1.122292 (3 pages) | Cited 56 times

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The surface deformation induced by a Gaussian laser beam on azobenzene polymer film reveals strong polarization dependence and establishes that an optical field component in the direction of the intensity gradient is essential for the deformation process. The experimental results allow us to infer the phase relationship between the surface relief gratings and the writing interference pattern. © 1998 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.70.Jk Polymers and organics

Synchrotron x-ray microbeam diagnostics of combinatorial synthesis

E. D. Isaacs, M. Marcus, G. Aeppli, X.-D. Xiang, X.-D. Sun, P. Schultz, H.-K. Kao, G. S. Cargill, and R. Haushalter

Appl. Phys. Lett. 73, 1820 (1998); http://dx.doi.org/10.1063/1.122293 (3 pages) | Cited 28 times

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X-ray microbeam techniques (spot size=3×20 μm2) have been applied to characterize the composition and structure of rare earth activated Gd(La, Sr)AlO3 phosphor thin films grown by combinatorial synthesis. Using x-ray fluorescence, x-ray diffraction and near-edge x-ray absorption spectroscopy, we have measured the chemical composition, crystallographic structure, and valence state of the rare earth activator atom Eu. These measurements represent the direct application of x-ray techniques to solid-state materials prepared by combinatorial synthesis and demonstrate the power of x-ray microbeam analysis to nondestructively characterize as-grown combinatorial libraries. © 1998 American Institute of Physics.
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82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
78.70.Dm X-ray absorption spectra
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
78.66.Nk Insulators
61.66.Fn Inorganic compounds

Electric fatigue in sol–gel prepared Pb(Zr,Sn,Ti)NbO3 thin films

Jae Hyuk Jang, Ki Hyun Yoon, and Hyun Jung Shin

Appl. Phys. Lett. 73, 1823 (1998); http://dx.doi.org/10.1063/1.122294 (3 pages) | Cited 19 times

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The fatigue properties of the sol–gel derived Pb0.99[(Zr0.6Sn0.4)1−XTiX]0.98Nb0.02O3 (40/100X/2) thin films deposited on platinized silicon substrates were investigated as a function of Ti content (0.03 ⩽ X ⩽ 0.15). With an increase of Ti content X, the antiferroelectric phase was transformed to the ferroelectric phase and the degradation of polarization under the repetitive switching was increased. This behavior should be closely related to the fact that the antiferroelectric phase contains mainly 180° domains, which have smaller internal stresses during switching than those of 90° domains. The difference of nanoscale domain structure between the antiferroelectric and ferroelectric thin films was confirmed by scanning force microscopy. © 1998 American Institute of Physics.  
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Optical switches of gadolinium–magnesium multilayers

P. van der Sluis

Appl. Phys. Lett. 73, 1826 (1998); http://dx.doi.org/10.1063/1.122295 (3 pages) | Cited 17 times

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It is shown that Pd-coated multilayers built from alternating Gd and Mg layers go through an optical transition by variation of the hydrogen concentration. The multilayer structure is preserved during switching. The optical properties of these stacks are comparable to those of the Pd-coated GdMg alloys. By selecting appropriate multilayer periods, faster switches can be built when compared to alloys with a comparable Mg content. © 1998 American Institute of Physics.
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78.66.Bz Metals and metallic alloys
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Photoluminescence from GaAs nanocrystals fabricated by Ga+ and As+ co-implantation into SiO2 matrices

Shinji Okamoto, Yoshihiko Kanemitsu, Kyu Sung Min, and Harry A. Atwater

Appl. Phys. Lett. 73, 1829 (1998); http://dx.doi.org/10.1063/1.122296 (3 pages) | Cited 22 times

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We have fabricated GaAs nanocrystals by means of Ga+ and As+ co-implantation into SiO2 matrices and applied selective excitation spectroscopy to clarify the origin of photoluminescence (PL) from GaAs nanocrystals in SiO2 matrices. Under blue laser excitation, broad PL spectra with multipeaks are observed in the visible spectral region. Under selective excitation at energies within a certain band, fine structures are observed at low temperatures and the size-dependent PL structures are attributed to quantum confinement states in GaAs nanocrystals. The origin of visible PL from GaAs/SiO2 nanocomposites is discussed. © 1998 American Institute of Physics.
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78.55.Cr III-V semiconductors
61.46.-w Structure of nanoscale materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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