APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Sep 1998

Volume 73, Issue 13, pp. 1757-1915

Return to All Sections
back to top
RSS Feeds

Structural and optical properties of pseudomorphic InxGa1−xN alloys

L. T. Romano, B. S. Krusor, M. D. McCluskey, D. P. Bour, and K. Nauka

Appl. Phys. Lett. 73, 1757 (1998); http://dx.doi.org/10.1063/1.122272 (3 pages) | Cited 34 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thick (225 nm) InxGa1−xN layers, grown on 5 μm thick GaN, were found by x-ray diffraction (XRD) measurements to be pseudomorphic up to x = 0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1−xN/GaN interface. Composition of the overlayers was determined by Rutherford backscattering spectrometry and correlated to both the a and c lattice constants from XRD. It was found that Vegard’s law is applicable at these compositions, if the biaxial strain is included. Biaxial strain must also be considered to accurately determine the bowing parameter as shown by optical transmission measurements. © 1998 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
78.66.Fd III-V semiconductors
68.60.Bs Mechanical and acoustical properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
78.40.Fy Semiconductors

Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance

P. Wisniewski, W. Knap, J. P. Malzac, J. Camassel, M. D. Bremser, R. F. Davis, and T. Suski

Appl. Phys. Lett. 73, 1760 (1998); http://dx.doi.org/10.1063/1.122273 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report an investigation, performed in the full composition range x = 0–1, of the change in infrared reflectivity spectra of AlxGa1−xN layers deposited on 6H–SiC substrates. We have found two different transverse E1(TO) phonon frequencies that can be assigned to AlN-like and GaN-like modes. The composition dependences of these frequencies can be well approximated by linear functions and the oscillator strengths scale like the corresponding Al and Ga mole fractions, respectively. On a purely experimental basis, this establishes evidence of a two-mode behavior for this controversial alloy system. The frequencies of the impurity mode of Ga in AlN (622 cm−1) and of the impurity mode of Al in GaN (643 cm−1) were determined. © 1998 American Institute of Physics.
Show PACS
63.20.Pw Localized modes
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Femtosecond laser-induced three-dimensional bright and long-lasting phosphorescence inside calcium aluminosilicate glasses doped with rare earth ions

Jianrong Qiu, K. Miura, H. Inouye, Y. Kondo, T. Mitsuyu, and K. Hirao

Appl. Phys. Lett. 73, 1763 (1998); http://dx.doi.org/10.1063/1.122274 (3 pages) | Cited 74 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on a novel phenomenon in calcium aluminosilicate glasses doped with Ce3+, Tb3+, and Pr3+. After irradiation by an 800 nm femtosecond pulsed laser, the focused part of the laser in the glasses emits bright and long-lasting phosphorescence able to be clearly seen with the naked eye in the dark even one hour after the removal of the activating laser. Moreover, by selecting appropriate glass compositions and species of rare earth ions, optional three-dimensional image patterns emitting long-lasting phosphorescence in various colors, including blue, green, and red, can be formed within glass samples by moving the focal point of the laser. Based on absorption spectra, the long-lasting phosphorescence is considered to be due to the thermostimulated recombination of holes and electrons at traps induced by the laser irradiation, which leave holes or electrons in a metastable excited state at room temperature. © 1998 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
78.47.-p Spectroscopy of solid state dynamics
71.55.Jv Disordered structures; amorphous and glassy solids

Using printing and molding techniques to produce distributed feedback and Bragg reflector resonators for plastic lasers

John A. Rogers, Martin Meier, and Ananth Dodabalapur

Appl. Phys. Lett. 73, 1766 (1998); http://dx.doi.org/10.1063/1.122275 (3 pages) | Cited 37 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We describe the use of low cost printing and molding techniques to fabricate distributed feedback and Bragg reflector resonators for photoexcited plastic lasers that have narrow emission profiles in the visible range. The good performance of the lasers demonstrates the suitability of these techniques for fabricating certain types of functional optoelectronic devices that require submicron features patterned over macroscopic areas. © 1998 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.70.Hj Laser materials
85.40.Hp Lithography, masks and pattern transfer
42.55.Rz Doped-insulator lasers and other solid state lasers

Fluorescence lifetime three-dimensional microscopy with picosecond precision using a multifocal multiphoton microscope

M. Straub and S. W. Hell

Appl. Phys. Lett. 73, 1769 (1998); http://dx.doi.org/10.1063/1.122276 (3 pages) | Cited 42 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The combination of pulsed-mode excitation multifocal multiphoton microscopy with a high-repetition, time-gated intensified CCD camera enables efficient three-dimensional (3D) fluorescence lifetime imaging. With a 200-ps gate opening at 76 MHz repetition rate, fluorescence decay can be traced in a sequence of images with varying delays between pulse and gate. Fluorophore lifetimes are measured with a precision of a few picoseconds. As an application we show that, upon two-photon excitation at 800 nm, certain pollen samples feature a multiexponential fluorescence relaxation. Our results indicate that efficient four-dimensional microscopy with hundreds of nanometer spatial and tens of picoseconds temporal resolution is within reach. © 1998 American Institute of Physics.
Show PACS
87.64.-t Spectroscopic and microscopic techniques in biophysics and medical physics
87.80.-y Biophysical techniques (research methods)
07.60.Pb Conventional optical microscopes
06.60.Jn High-speed techniques (microsecond to femtosecond)

Improved Mg-doped GaN films grown over a multilayered buffer

Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, and Wen Wang

Appl. Phys. Lett. 73, 1772 (1998); http://dx.doi.org/10.1063/1.122277 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Mg-doped p-GaN films have been grown on sapphire substrate with a multilayered buffer (MLB) by metalorganic chemical vapor deposition and characterized by photoluminescence spectroscopy. The MLB consists of GaN/AlxGa1−xN (0<x ⩽ 1) superlattice-like layer structures although the material combination as well as the periodicity and uniformity in layer thickness and composition are not essential issues for constituting a MLB. It was found that the p-GaN films grown on MLBs gave much stronger optical emission than those grown on conventional GaN or AlxGa1−xN (0<x ⩽ 1) single-layer buffer or GaN/AlxGa1−xN double-layer buffer under identical reactor configuration. This fact indicates that, by using the newly-developed MLB, the crystalline quality of group-III nitride-based-semiconductor epitaxial layers can be significantly improved. © 1998 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

Local tuning of organic light-emitting diode color by dye droplet application

T. R. Hebner and J. C. Sturm

Appl. Phys. Lett. 73, 1775 (1998); http://dx.doi.org/10.1063/1.122278 (3 pages) | Cited 38 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have demonstrated that fluorescent dyes may be introduced into previously fabricated polymer thin films by local application of a dye-containing droplet. The UV fluorescence spectra of the films and the spectra of organic light-emitting diodes made from these films can be successfully tuned by this method. The technique has been implemented by ink-jet printing of the dye droplet. © 1998 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics

Absolute frequency stabilization of two diode-pumped Er–Yb:glass lasers to the acetylene P(15) line at 1534 nm

C. Svelto, E. Bava, S. Taccheo, and P. Laporta

Appl. Phys. Lett. 73, 1778 (1998); http://dx.doi.org/10.1063/1.122279 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two identical diode-pumped bulk Er–Yb:glass lasers, operating at 1534-nm wavelength, have been independently locked to the P(15) rovibrational line of the acetylene molecule by the FM sideband technique. Measurements of the beat note between the two lasers show a long-term frequency stability of 170 kHz over a 1-h period and a short-term laser linewidth below 50 kHz over 1 ms. The Allan standard deviation of the beat frequency was measured yielding values below 10−10 for integration times between 10 ms and 1 s, reaching the 4×10−11 level at 0.1 s. © 1998 American Institute of Physics.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

CdS photoluminescence inhibition by a photonic structure

A. Blanco, C. López, R. Mayoral, H. Míguez, F. Meseguer, A. Mifsud, and J. Herrero

Appl. Phys. Lett. 73, 1781 (1998); http://dx.doi.org/10.1063/1.122280 (3 pages) | Cited 82 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Here we present experimental evidence of the strong modification of the CdS photoluminescence when it is embedded in a SiO2 colloidal photonic crystal. When the emitted light matches a forbidden photonic band in the matrix, inhibition of the semiconductor photoluminescence is achieved. In this work we prove the effective control of this effect by means of the photonic lattice parameter of the host. CdS was grown by chemical bath deposition and its quality has been checked employing Raman spectroscopy and x-ray diffraction. Scanning electron microscopy is used to study the morphology of the composite. © 1998 American Institute of Physics.
Show PACS
78.55.Et II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.70.Dd Colloids

Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

M. K. Zundel, N. Y. Jin-Phillipp, F. Phillipp, K. Eberl, T. Riedl, E. Fehrenbacher, and A. Hangleiter

Appl. Phys. Lett. 73, 1784 (1998); http://dx.doi.org/10.1063/1.122281 (3 pages) | Cited 29 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Red-light-emitting quantum dot injection lasers have been prepared by solid-source molecular beam epitaxy. The separate confinement heterostructure contains densely stacked layers of self-assembled InP quantum dots embedded in Ga0.51In0.49P waveguide and Si/Be-doped Al0.53In0.47P cladding layers. Edge-emitting laser diodes are processed, which show quantum dot lasing at 90 K. Thereby, the threshold current density is 172 A/cm2. The energy of the laser line is at 1.757 eV, which is very close to the peak energy of subthreshold electroluminescence. © 1998 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

A photonic switch based on a gigantic, reversible optical nonlinearity of liquefying gallium

P. J. Bennett, S. Dhanjal, P. Petropoulos, D. J. Richardson, N. I. Zheludev, and V. I. Emelyanov

Appl. Phys. Lett. 73, 1787 (1998); http://dx.doi.org/10.1063/1.122282 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Liquefying gallium shows a huge reversible optical nonlinearity which is compatible with waveguide technology and promises to be a breakthrough in broadband, light-by-light modulation at milliwatt operating power levels and frequency band spanning up to several hundred kilohertz. © 1998 American Institute of Physics.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
84.40.Ua Telecommunications: signal transmission and processing; communication satellites
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism

Jia-Yu Zhang, Xi-Mao Bao, Yong-Hong Ye, and Xi-Lin Tan

Appl. Phys. Lett. 73, 1790 (1998); http://dx.doi.org/10.1063/1.122283 (3 pages) | Cited 26 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Under violet excitation, a strong blue band and a broad red band are emitted simultaneously from the Ge nanocrystal embedded SiO2 films fabricated by Ge+ implantation and annealing. The blue band exhibits a complex annealing behavior, and the photoluminescence excitation spectral analysis indicates that it results from a combination of several implantation-induced deficient centers. The peak position of the red band shifts from 600 to 640 nm when the mean size of Ge nanocrystals increases from 4.3 to 6.7 nm, suggesting that the red band comes from the radiative recombination of excitons confined in Ge nanocrystals. © 1998 American Institute of Physics.
Show PACS
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

D. Sun, D. W. Treat, K. Beernink, R. D. Bringans, and G. J. Kovacs

Appl. Phys. Lett. 73, 1793 (1998); http://dx.doi.org/10.1063/1.122284 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report red and infrared quantum well (QW) semiconductor lasers integrated on a GaAs substrate by etching and regrowth. A separate confinement heterostructure infrared laser containing an In0.15Al0.15Ga0.7As/Al0.4Ga0.6As QW with AlInP cladding layers was grown on a GaAs substrate. The wafer was then patterned with stripes of etch masks and was etched back to the substrate. A Ga0.4In0.6P/(AlGa)0.5In0.5P QW separate confinement heterostructure laser was subsequently grown side by side with the infrared laser structure. Independently addressable dual-wavelength lasers of 50 μm spacing were fabricated by forming 4 μm wide buried ridge waveguides. The dual-wavelength lasers operated in threshold currents of 10 mA at a peak wavelength of 835 nm and 20 mA at a peak wavelength of 670 nm.© 1998 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
81.65.Cf Surface cleaning, etching, patterning
42.82.Et Waveguides, couplers, and arrays

The physics of negative differential resistance of an intracavity voltage-controlled absorber in a vertical-cavity surface-emitting laser

Janice A. Hudgings, Robert J. Stone, Sui F. Lim, Gabriel S. Li, Wupen Yuen, Kam Y. Lau, and Connie J. Chang-Hasnain

Appl. Phys. Lett. 73, 1796 (1998); http://dx.doi.org/10.1063/1.122285 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have constructed a vertical-cavity, surface-emitting laser with a voltage-controlled quantum well absorber in the upper mirror stack. If the lasing wavelength of this device is designed to be slightly longer than the absorber band edge, sharp negative differential resistance can be obtained in the absorber under lasing conditions. We present strong experimental evidence that this behavior arises from redshifting of the absorption excitonic peak due to the quantum confined Stark effect. Design criteria are proposed for applications including high speed modulation and self-pulsation. © 1998 American Institute of Physics.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Bq Design and performance testing of integrated-optical systems
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
73.50.Fq High-field and nonlinear effects
71.35.-y Excitons and related phenomena
42.79.Hp Optical processors, correlators, and modulators
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close