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28 Sep 1998

Volume 73, Issue 13, pp. 1757-1915

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Site-selective diamond growth using a platinum film and a silicon oxide mask

Yukihiro Sakamoto, Matsufumi Takaya, Hiroyuki Sugimura, Osamu Takai, and Nobuyuki Nakagiri

Appl. Phys. Lett. 73, 1913 (1998); http://dx.doi.org/10.1063/1.122314 (3 pages) | Cited 4 times

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In order to fabricate diamond microstructures, we have developed a site-selective microwave plasma chemical vapor deposition (MW-PCVD) method, which is based on the great difference, in the 106order, between the nucleation densities of diamond on Pt and SiO2 surfaces. First, we prepared a substrate consisting of a Pt film covered with a SiO2 layer on which holes of a 2 μm×2 μm square were fabricated by photolithography. Next, diamond was synthesized onto this substrate by MW-PCVD using a mixture of CH4 and H2 as a reaction gas. Under appropriate conditions, diamond crystals selectively nucleated in the holes where the Pt film surface was exposed, while the surrounding SiO2 surface remained undeposited. A microdiamond array was successfully fabricated by this method. Diamond crystals of ∼2 μm are precisely arranged at vertical and lateral intervals of 20 μm. © 1998 American Institute of Physics.
Show PACS
81.05.ub Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
85.40.Hp Lithography, masks and pattern transfer
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