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5 Oct 1998

Volume 73, Issue 14, pp. 1925-2058

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Poisson’s ratio measurement in tungsten thin films combining an x-ray diffractometer with in situ tensile tester

P.-O. Renault, K. F. Badawi, L. Bimbault, Ph. Goudeau, E. Elkaïm, and J. P. Lauriat

Appl. Phys. Lett. 73, 1952 (1998); http://dx.doi.org/10.1063/1.122332 (3 pages) | Cited 24 times

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A direct determination of the Poisson’s ratio in 150 nm polycrystalline tungsten thin films deposited by ion-beam sputtering on Duralumin substrates has been performed by combining x-ray diffraction measurements with in situ traction on the sample. X-ray diffraction experiments using the sin2 ψ method have been done at LURE, the French synchrotron facility (Orsay, France) on a four-circle diffractometer. The method described in this letter allows us to extract in a simple way and with a good precision the Poisson’s ratio of thin films on substrates from the evolution of the sin2 ψ curves as a function of applied strains. In the case of tungsten thin film, the value obtained is close to the bulk material one. © 1998 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.20.D- Elasticity

Analytical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr, Ti)O3 on a Pt electrode

Nobuyuki Ikarashi

Appl. Phys. Lett. 73, 1955 (1998); http://dx.doi.org/10.1063/1.122333 (3 pages) | Cited 31 times

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Changes in the crystal structure of Pb(Zr, Ti)O3 (PZT) on a Pt electrode caused by annealing in hydrogen-containing ambient have been studied using analytical transmission electron microscopy. A decrease in Pb composition and distortion in Ti–O coordination occur at the PZT/Pt interface. These findings indicate that preferential reduction of Pb and sequential diffusion of Pb from the PZT to the Pt electrode play an important role in the changes of the PZT crystal. Thus, changes in crystal structure due to annealing in a hydrogen-containing ambient can be avoided by using electrode materials that prevent Pb diffusion. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.Cc Kinetics of defect formation and annealing

Laser-assisted low temperature processing of Pb(Zr, Ti)O3 thin film

Yongfei Zhu, Jinsong Zhu, Yoon J. Song, and S. B. Desu

Appl. Phys. Lett. 73, 1958 (1998); http://dx.doi.org/10.1063/1.122334 (3 pages) | Cited 24 times

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A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing

Reversible bending of carbon nanotubes using a transmission electron microscope

Walter H. Knechtel, Georg S. Düsberg, Werner J. Blau, Eduardo Hernández, and Angel Rubio

Appl. Phys. Lett. 73, 1961 (1998); http://dx.doi.org/10.1063/1.122335 (3 pages) | Cited 17 times

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Multiwall carbon nanotubes can be bent by changing the current density of the electron beam in a transmission electron microscope. The effect could be observed in a small fraction of nanotubes in the investigated samples. The bending can be varied continuously, is reversible, and highly reproducible. On removing the force which makes them bend, they relax to their originally straight shape without any damage, thus exhibiting spring-like behavior. Possible mechanisms for this effect are discussed. © 1998 American Institute of Physics.  
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61.46.-w Structure of nanoscale materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
62.20.F- Deformation and plasticity
36.40.-c Atomic and molecular clusters
81.05.ub Fullerenes and related materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Electronic origin of the stability trend in TiSi2 phases with Al or Mo layers

F. Bònoli, M. Iannuzzi, Leo Miglio, and V. Meregalli

Appl. Phys. Lett. 73, 1964 (1998); http://dx.doi.org/10.1063/1.122336 (3 pages) | Cited 24 times

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Through a tight-binding rigid-band approach we show that changes in the relative stability of the C54, C49, and C40 phases of TiSi2, with electrons per atom ratio, are produced by the corresponding differences in the electronic density of states at the Fermi level. In particular, by increasing this ratio the stable phase evolves from C49 to C54, and then to C40. Our microscopic model provides a straightforward interpretation of very recent experimental findings concerning the sizeable variations in the transition temperature between C49 and C54 TiSi2 in the presence of Al or Mo layers. © 1998 American Institute of Physics.
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61.66.Fn Inorganic compounds
68.60.Dv Thermal stability; thermal effects
71.20.Lp Intermetallic compounds

Growth of CaF2 on Si(111): Imaging of the CaF interface by friction force microscopy

Andreas Klust, Holger Pietsch, and Joachim Wollschläger

Appl. Phys. Lett. 73, 1967 (1998); http://dx.doi.org/10.1063/1.122337 (3 pages) | Cited 5 times

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The initial growth state of CaF2/Si(111) has been investigated in the high-temperature regime (700 °C). At these growth temperatures the interface between CaF2 and Si consists of CaF with the Ca atoms bound to the Si. Using friction force microscopy it is possible to distinguish between the interfacial CaF layer and the overgrowing CaF2 with high lateral resolution: the CaF layer has a higher friction coefficient than the bulklike CaF2. This material contrast has been used to investigate the CaF2 nucleation on the interfacial CaF layer. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films

I. J. R. Baumvol, T. D. M. Salgado, C. Radtke, C. Krug, and J. de Andrade

Appl. Phys. Lett. 73, 1970 (1998); http://dx.doi.org/10.1063/1.122338 (3 pages) | Cited 3 times

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The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films (ONO) was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrations of N in the near-surface and near-interface regions, and a high N concentration in the bulk. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.65.Mq Oxidation
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors

S. Aggarwal, S. R. Perusse, C. W. Tipton, R. Ramesh, H. D. Drew, T. Venkatesan, D. B. Romero, V. B. Podobedov, and A. Weber

Appl. Phys. Lett. 73, 1973 (1998); http://dx.doi.org/10.1063/1.122339 (3 pages) | Cited 98 times

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The properties of ferroelectric films are known to degrade when subjected to hydrogen in forming gas anneals. Earlier studies have attributed this degradation to the loss of oxygen from these films during these anneals. In this study, we show that though oxygen is lost during forming gas annealing, hydrogen incorporation is the primary mechanism for the degradation of ferroelectric properties. Raman spectra obtained from the forming gas-annealed films show evidence of polar hydroxil [OH−] bonds in the films. The most probable site for hydrogen ions is discussed based on ionic radii, crystal structure, electrical properties, and Raman spectra. We propose that the hydrogen ion is bonded with one of the apical oxygen ions and prevents the Ti ion from switching. Pyroelectric measurements on forming gas-annealed capacitors confirm that the capacitors no longer possess spontaneous polarization. © 1998 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
78.30.Hv Other nonmetallic inorganics
77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.70.+a Pyroelectric and electrocaloric effects

Nanometer-scale patterning of self-assembled monolayer films on native silicon oxide

A. Inoue, T. Ishida, N. Choi, W. Mizutani, and H. Tokumoto

Appl. Phys. Lett. 73, 1976 (1998); http://dx.doi.org/10.1063/1.122340 (3 pages) | Cited 12 times

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A nanoscale-patterning method on silicon oxide using a self-assembled monolayer (SAM) was developed. The silicon surface with native oxide was additionally oxidized locally in dry nitrogen atmosphere by the field-induced oxidation (FIO) technique using an atomic force microscope with a conductive cantilever, and then immersed in octadecyltrichlorosilane (OTS) solution. The contact angle and topography image revealed that the OTS layer was formed only on the native oxide. In contrast, when FIO was performed under the humidity of 88%, OTS SAM was formed on both FIO and native oxide. These results indicate that SAM formation on silicon oxides can be locally suppressed by FIO in a dry environment. By using this technique, we could fabricate a line structure of OTS SAM as narrow as 22 nm. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties
81.65.Cf Surface cleaning, etching, patterning
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