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5 Oct 1998

Volume 73, Issue 14, pp. 1925-2058

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Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study

N. Liu, C. K. Shih, J. Geisz, A. Mascarenhas, and J. M. Olson

Appl. Phys. Lett. 73, 1979 (1998); http://dx.doi.org/10.1063/1.122341 (3 pages) | Cited 20 times

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We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like (math11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (math11) planes and one GaP-like (math11) plane that we call (InP)2(GaP)1-type ordering. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Single-electron effects in slim semiconductor superlattices

T. Schmidt, R. J. Haug, K. v. Klitzing, and K. Eberl

Appl. Phys. Lett. 73, 1982 (1998); http://dx.doi.org/10.1063/1.122342 (3 pages) | Cited 2 times

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We fabricated laterally confined GaAs–AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current–voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.23.Hk Coulomb blockade; single-electron tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides

Koji Eriguchi and Masaaki Niwa

Appl. Phys. Lett. 73, 1985 (1998); http://dx.doi.org/10.1063/1.122343 (3 pages) | Cited 12 times

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Temperature and stress polarity-dependent dielectric breakdown in thin silicon dioxides has been carefully investigated. The experimental data show that the time to breakdown under a constant-current injection has two kinks around 330 and 230 K for 4- and 10-nm-thick oxides under both stress polarities. It has been found that thinner oxides have a stronger temperature dependence (a larger activation energy) even if the field dependence of the activation energy is taken into consideration, and also that, from the gate voltage shift during the constant-current injection, the postbreakdown characteristics strongly depends on the stress polarity for thinner oxides. © 1998 American Institute of Physics.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Jp Dielectric breakdown and space-charge effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Characterization of a semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave applications

N. E. Islam, E. Schamiloglu, and C. B. Fleddermann

Appl. Phys. Lett. 73, 1988 (1998); http://dx.doi.org/10.1063/1.122344 (3 pages) | Cited 20 times

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Simulation results depicting physical conditions in a photoconductive semiconductor switch in the pulse charging state, prior to high power switching, are analyzed. Results show that surface conditions and EL2 traps in semi-insulating GaAs influence the conduction process, specifically at high bias. Formation of trap-filled regions renders the device inhomogeneous for stable conduction and premature breakdown occurs, due to a large extent on unstable current filamentation within the device. Unlike insulators, the breakdown of desorbed gas from the surface (surface flashover) does not contribute to premature breakdown. © 1998 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
85.30.De Semiconductor-device characterization, design, and modeling
84.32.Dd Connectors, relays, and switches
84.40.-x Radiowave and microwave (including millimeter wave) technology

19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cells

Jianhua Zhao, Aihua Wang, Martin A. Green, and Francesca Ferrazza

Appl. Phys. Lett. 73, 1991 (1998); http://dx.doi.org/10.1063/1.122345 (3 pages) | Cited 203 times

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Multicrystalline silicon wafers, widely used in commercial photovoltaic cell production, traditionally give much poorer cell performance than monocrystalline wafers (the previously highest performance laboratory devices have solar energy conversion efficiencies of 18.6% and 24.0%, respectively). A substantially improved efficiency for a multicrystalline silicon solar cell of 19.8% is reported together with an incremental improvement in monocrystalline cell efficiency to 24.4%. The improved multicrystalline cell performance results from enshrouding cell surfaces in thermally grown oxide to reduce their detrimental electronic activity and from isotropic etching to form an hexagonally symmetric “honeycomb” surface texture. This texture reduces reflection loss as well as substantially increasing the cell’s effective optical thickness by causing light to be trapped within the cell by total internal reflection. © 1998 American Institute of Physics.
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84.60.Jt Photoelectric conversion

Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amano, and I. Akasaki

Appl. Phys. Lett. 73, 1994 (1998); http://dx.doi.org/10.1063/1.122346 (3 pages) | Cited 104 times

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The optical band gap in 40 nm Ga1−xInxN/GaN single heterostructures is investigated in the composition range 0<x<0.2 by photoreflection spectroscopy (PR) at room temperature and compared with photoluminescence (PL) data. Clear PR oscillations at the GaInN band gap are observed as originating in the large piezoelectric field. Effective band gap bowing parameters b are derived for pseudomorphically stressed GaInN on GaN: b = 2.6 eV (PR) and b = 3.2 eV (PL in localized states). Using experimental deformation potentials of GaN, b = 3.8 eV is extrapolated for the optical band gap in relaxed GaInN material. Previously reported smaller values are discussed. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.-e Optical properties of bulk materials and thin films

Polarization dependence of intraband absorption in self-organized quantum dots

S. J. Chua, S. J. Xu, X. H. Zhang, X. C. Wang, T. Mei, W. J. Fan, C. H. Wang, J. Jiang, and X. G. Xie

Appl. Phys. Lett. 73, 1997 (1998); http://dx.doi.org/10.1063/1.122347 (3 pages) | Cited 13 times

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Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In0.35Ga0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Electronic properties in p-type GaN studied by Raman scattering

H. Harima, T. Inoue, S. Nakashima, K. Furukawa, and M. Taneya

Appl. Phys. Lett. 73, 2000 (1998); http://dx.doi.org/10.1063/1.122348 (3 pages) | Cited 19 times

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Raman spectra from p-type GaN have been systematically studied in the hole density range of 5×1016–1×1018 cm−3. Contrary to the case of n-type samples, spectral profiles of the LO-phonon-plasmon coupled mode in p-type show no remarkable change with the hole density. Thus, precise evaluation of electrical transport parameters such as carrier density and mobility from the coupled mode profile is difficult. However, a continuum band has been observed in the low-frequency range of the spectra, becoming intense with the increase of the hole density. This band has been attributed to the inter-valence-band transition of holes, and the intensity can be used as a good measure of the hole density. © 1998 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
63.20.kk Phonon interactions with other quasiparticles
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
72.20.Fr Low-field transport and mobility; piezoresistance

Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

S. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, and P. M. Petroff

Appl. Phys. Lett. 73, 2003 (1998); http://dx.doi.org/10.1063/1.122349 (3 pages) | Cited 143 times

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Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate. © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota

Appl. Phys. Lett. 73, 2006 (1998); http://dx.doi.org/10.1063/1.122350 (3 pages) | Cited 175 times

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The emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ, and L exceed the valence band discontinuity, ΔEV. In this case, holes are confined in the triangular potential well formed at one side of the well producing the apparent Stokes-like shift. Under the condition that FPZ×L exceeds the conduction band discontinuity ΔEC, the electron-hole pair is confined at opposite sides of the well. The QCFK further modulated the emission energy for the wells with L greater than the three dimensional free exciton Bohr radius aB. On the other hand, effective in-plane localization of carriers in quantum disk size potential minima, which are produced by nonrandom alloy compositional fluctuation enhanced by the large bowing parameter and FPZ, produces a confined electron-hole pair whose wave functions are still overlapped (quantized excitons) provided that L<aB. © 1998 American Institute of Physics.  
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
71.20.Nr Semiconductor compounds
77.65.Ly Strain-induced piezoelectric fields
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.20.Fz Weak or Anderson localization

Si/Pt Ohmic contacts to p-type 4H–SiC

N. A. Papanicolaou, A. Edwards, M. V. Rao, and W. T. Anderson

Appl. Phys. Lett. 73, 2009 (1998); http://dx.doi.org/10.1063/1.122351 (3 pages) | Cited 6 times

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In this letter, we report on the investigation of Si/Pt Ohmic contacts to p-type 4H–SiC. The contacts were formed by a vacuum annealing method at 1100 °C for 3 min, which resulted in specific contact resistivities in the low 10−4 Ω cm2 range. Auger analysis has shown that, at this anneal temperature, there was a uniform intermixing of the Si and Pt, migration of Pt into the SiC, and out-diffusion of C into the metallization layers. Overlayers of Au or Ni/Au on Si/Pt had the effect of decreasing the specific contact resistance and improving the surface morphology of the annealed contacts. © 1998 American Institute of Physics.
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73.40.Cg Contact resistance, contact potential
81.40.Gh Other heat and thermomechanical treatments
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
07.50.-e Electrical and electronic instruments and components
61.72.Cc Kinetics of defect formation and annealing
79.20.Fv Electron impact: Auger emission
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy

Jun-ichi Kasai and Masahiko Kawata

Appl. Phys. Lett. 73, 2012 (1998); http://dx.doi.org/10.1063/1.122352 (3 pages) | Cited 2 times

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Using a low-temperature microphotoluminescence method, we have investigated the optical properties of oval defects in a GaAs layer grown by molecular beam epitaxy. The photoluminescence (PL) spectra of oval defects exhibited new distinct peaks, which had a narrow width (0.5 meV) and a strong intensity comparable to the exciton luminescence from a defect-free region of the epilayer. The excitation-power dependence and our PL image measurements suggest that the peaks are due to the recombination of excitons bound to the defects. The PL image of the free-exciton luminescence clearly revealed the features of a pair of asymmetric oval defects, each of which had a pyramidal structure consisting of stacking fault planes. The clear features indicate effective carrier confinement within the pyramid, where the stacking fault planes functioned as a potential barrier. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
71.55.Eq III-V semiconductors

Transient enhanced diffusion from decaborane molecular ion implantation

Aditya Agarwal, H.-J. Gossmann, D. C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada, J. Matsuo, and T. E. Haynes

Appl. Phys. Lett. 73, 2015 (1998); http://dx.doi.org/10.1063/1.122353 (3 pages) | Cited 16 times

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Transient enhanced diffusion (TED) from implantation of 5 keV B10H14 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 1014 and 1015 cm−2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 1015 cm−2 B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become substitutional in the silicon lattice. Accordingly, no contribution to TED is expected from the hydrogen in the B10H14 ions and none is observed. Furthermore, there is no detectable effect in the diffusion profiles which can be attributed to a difference in the ion damage produced by the decaborane molecule and the boron atom. In both cases the reduction in diffusivity enhancement is due only to proximity of the implantation-induced excess interstitials to the wafer surface. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.-d Chemical analysis and related physical methods of analysis
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Enhanced GaN decomposition in H2 near atmospheric pressures

D. D. Koleske, A. E. Wickenden, R. L. Henry, M. E. Twigg, J. C. Culbertson, and R. J. Gorman

Appl. Phys. Lett. 73, 2018 (1998); http://dx.doi.org/10.1063/1.122354 (3 pages) | Cited 29 times

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GaN decomposition is studied at metallorganic vapor phase epitaxy pressures (i.e., 10–700 Torr) in flowing H2. For temperatures ranging from 850 to 1050 °C, the GaN decomposition rate is accelerated when the H2 pressure is increased above 100 Torr. The Ga desorption rate is found to be independent of pressure, and therefore, does not account for the enhanced GaN decomposition rate. Instead, the excess Ga from the decomposed GaN forms droplets on the surface which, for identical annealing conditions, increase in size as the pressure is increased. Possible connections between the enhanced GaN decomposition rate, the coarsening of the nucleation layer during the ramp to high temperature, and increased GaN grain size at high temperature are discussed. © 1998 American Institute of Physics.
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81.65.-b Surface treatments
81.05.Ea III-V semiconductors
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation

B. Gelloz, T. Nakagawa, and N. Koshida

Appl. Phys. Lett. 73, 2021 (1998); http://dx.doi.org/10.1063/1.122355 (3 pages) | Cited 46 times

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The use of anodic oxidation as a post-treatment of porous silicon has been investigated to enhance the external quantum efficiency of electroluminescence from a device based on a thin transparent indium tin oxide contact on porosified n+-type silicon. Enhancement in external quantum efficiency of three orders of magnitude has been obtained. We report here an external quantum efficiency of 0.21%. The treatment also greatly improves the stability of the device. Results can be explained by the fact that anodic oxidation considerably reduces leakage current flowing via nonconfined silicon. © 1998 American Institute of Physics.
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81.65.Mq Oxidation
81.65.Rv Passivation
81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
82.45.-h Electrochemistry and electrophoresis

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

H. Nagai, Q. S. Zhu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki

Appl. Phys. Lett. 73, 2024 (1998); http://dx.doi.org/10.1063/1.122356 (3 pages) | Cited 14 times

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Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8×1019 cm−3, but the hole concentration was as low as 1.3×1017 cm−3 at room temperature. The DLTS spectrum has a dominant peak D1 with activation energy of 0.41±0.05 eV, accompanied by two additional peaks with activation energies of 0.49±0.09 eV(D2) and 0.59±0.05 eV(D3). It was found that the dominant peak D1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg–N–H complexes. © 1998 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

A. M. Lam, Y.-J. Zheng, and J. R. Engstrom

Appl. Phys. Lett. 73, 2027 (1998); http://dx.doi.org/10.1063/1.122357 (3 pages) | Cited 9 times

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Low-energy ion scattering spectrometry (LEISS) and x-ray photoelectron spectroscopy (XPS) have been employed to quantify in situ the near-surface composition of strained Si1−xGex epitaxial thin films grown on Si(100) substrates using GeH4 and Si2H6 as sources. The use of LEISS reveals the Ge concentration in essentially the first monolayer, whereas XPS is sensitive to several monolayers. We find that the extent of Ge surface segregation implied by each technique follows the trend: LEISS-Ge%≫XPS-Ge%≫bulk-Ge%. A two-site model (involving surface and bulk states) cannot account for both the XPS and LEISS results, rather a model invoking Ge enrichment in the subsurface layers is required to explain the data. © 1998 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Nq Composition and phase identification

Microfabrication of nanoscale cluster chains on a patterned Si surface

Jian Liu, John C. Barnard, Katrin Seeger, and Richard E. Palmer

Appl. Phys. Lett. 73, 2030 (1998); http://dx.doi.org/10.1063/1.122358 (3 pages) | Cited 12 times

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We have studied the formation of Cu clusters from Cu atoms deposited onto a Si (111) surface patterned with (2–5 μm width) lines of photoresist. In addition to a thin Cu layer on the exposed Si surface, large (∼150 nm) clusters nucleate at the boundary between the Si and the resist strips, which remain after removal of the resist by dissolution. The results show how it is possible, using the resist to collect deposited atoms, to assemble nanoscale cluster structures with a precision (∼150 nm feature size) which is much better than the resolution of conventional optical lithography (∼μm linewidth). © 1998 American Institute of Physics.  
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61.46.-w Structure of nanoscale materials
85.40.Ls Metallization, contacts, interconnects; device isolation
81.05.Bx Metals, semimetals, and alloys

Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions

C. Cai, M. I. Nathan, S. Rubini, L. Sorba, B. Mueller, E. Pelucchi, and A. Franciosi

Appl. Phys. Lett. 73, 2033 (1998); http://dx.doi.org/10.1063/1.122560 (3 pages)

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Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J–V) and capacitance versus voltage (C–V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10–0.12 eV. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.20.At Surface states, band structure, electron density of states
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