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12 Oct 1998

Volume 73, Issue 15, pp. 2069-2222

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Effect of surface roughness on the secondary ion yield in ion sputtering

Maxim A. Makeev and Albert-László Barabási

Appl. Phys. Lett. 73, 2209 (1998); http://dx.doi.org/10.1063/1.122425 (3 pages)

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There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Operation of a single column focused ion/electron beam system based on a dual ion/electron source

L. W. Chen and Y. L. Wang

Appl. Phys. Lett. 73, 2212 (1998); http://dx.doi.org/10.1063/1.122426 (3 pages) | Cited 3 times

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A focused ion/electron beam system has been constructed by introducing a dual ion/electron point source into an optical column of electrostatic lenses. Ions are extracted from a W needle covered by liquid In while electrons are from the same source after the In has been in situ solidified. The switching between ion and electron beam is achieved by exchanging the polarity of the potentials applied to the electrodes. In comparison to the ion emission, the electron emission appears to exhibit narrower angular distribution but larger intensity fluctuation and emission point migration. Despite the undesirable features in the electron source, the first operation of the focused ion/electron beam system has demonstrated the potential of a dual-beam single-column system. © 1998 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
41.75.Ak Positive-ion beams
07.77.Ka Charged-particle beam sources and detectors
41.85.Ne Electrostatic lenses, septa

In situ ultrasonic monitoring of photoresist development

Susan L. Morton, F. Levent Degertekin, and B. T. Khuri-Yakub

Appl. Phys. Lett. 73, 2215 (1998); http://dx.doi.org/10.1063/1.122427 (3 pages) | Cited 1 time

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We have developed an in situ method to measure the change in thickness of photoresist during development. The phase of a high frequency ultrasound signal is monitored as it is reflected from the silicon/photoresist interface during resist development. The method was tested using a 1.5 μm film of Shipley 1811 resist. The total phase change during development of 19° was consistent with theoretical calculations at 280 MHz, and this change was used to obtain the resist thickness during development. The method was used to find the development rate of this positive-tone resist as a function of exposure dose in the 20–68 mJ/cm2 range. As expected, there was an increase in development rate as the exposure time increased; this continued up to about 40 s of exposure, beyond which the rates were essentially unchanged. Measurements on a wafer with microelectronic devices ranging in topography from 0.10 to 1.0 μm show that the method is applicable to wafers with typical circuit topography. © 1998 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
43.35.Yb Ultrasonic instrumentation and measurement techniques
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