The formation of CoSi2
spike in the Co/Si3N4/Si(100)
system and its crystallographic structure have been investigated. An annealing at 1050 °C caused not only agglomeration of Co film but penetration of Co agglomerates through the Si3N4
layer. The CoSi2
spike of B type epitaxial and twinned orientation of CoSi2∥Si, Si(11)∥CoSi2(1)
was formed in the Si substrate by the penetrated Co source. The formation of the epitaxial CoSi2
spike can be explained by the fast diffusion of Co atoms along defects in Si such as dislocations resulting from stress between the Si3N4
layer and the Si substrate. © 1998 American Institute of Physics.