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19 Oct 1998

Volume 73, Issue 16, pp. 2233-2380

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Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

P. De Padova, P. Perfetti, R. Pizzoferrato, and M. Casalboni

Appl. Phys. Lett. 73, 2378 (1998); http://dx.doi.org/10.1063/1.122466 (2 pages) | Cited 4 times

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81.15.Hi	Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy	Elemental semiconductors
78.55.Ap	Elemental semiconductors
78.66.Db	Elemental semiconductors and insulators

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19 Oct 1998

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