APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Oct 1998

Volume 73, Issue 16, pp. 2233-2380

Return to All Sections
back to top
RSS Feeds

Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films

Z. Kighelman, D. Damjanovic, A. Seifert, L. Sagalowicz, and N. Setter

Appl. Phys. Lett. 73, 2281 (1998); http://dx.doi.org/10.1063/1.121702 (3 pages) | Cited 47 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Pb(Mg1/3Nb2/3)O3 (PMN) alkoxide precursor solutions were synthesized and used to prepare thin films by spin coating on TiO2/Pt/TiO2/SiO2/Si substrates. Many parameters like the use of homogeneous and stable precursor solutions and appropriate processing were used to greatly reduce the presence of the nonferroelectric pyrochlore phase. Transmission electron microscopy investigations, dielectric, electrostrictive, and direct current field induced piezoelectric measurements were carried out and have shown that PMN thin films exhibit a relaxor-like behavior. © 1998 American Institute of Physics.  
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Nq Composition and phase identification

Formation of epitaxial CoSi2 spike in Co/Si3N4/Si(100) system and its crystallographic structure

Ji-Soo Park, Dong Kyun Sohn, Yeongcheol Kim, Jong-Uk Bae, Byung Hak Lee, Jeong Soo Byun, and Jae Jeong Kim

Appl. Phys. Lett. 73, 2284 (1998); http://dx.doi.org/10.1063/1.121703 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The formation of CoSi2 spike in the Co/Si3N4/Si(100) system and its crystallographic structure have been investigated. An annealing at 1050 °C caused not only agglomeration of Co film but penetration of Co agglomerates through the Si3N4 layer. The CoSi2 spike of B type epitaxial and twinned orientation of CoSi2[110]∥Si[110], Si(11math)∥CoSi2(math1math) and Si(mathmath1)∥CoSi2(1math1) was formed in the Si substrate by the penetrated Co source. The formation of the epitaxial CoSi2 spike can be explained by the fast diffusion of Co atoms along defects in Si such as dislocations resulting from stress between the Si3N4 layer and the Si substrate. © 1998 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Mono-sized single-wall carbon nanotubes formed in channels of AlPO4-5 single crystal

Z. K. Tang, H. D. Sun, J. Wang, J. Chen, and G. Li

Appl. Phys. Lett. 73, 2287 (1998); http://dx.doi.org/10.1063/1.121704 (3 pages) | Cited 84 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An alternative approach to the synthesis of mono-sized and parallel-aligned single-wall carbon nanotubes (SWCNs) is reported. The SWCNs are formed in 0.73 nm sized channels of microporous aluminophosphate crystallites by pyrolysis of tripropylamine molecules in the channels. They are characterized through transmission electron microscopy, polarized Raman scattering, and electrical transport measurements. Our results would open a door to further detailed studies on the intrinsic properties of carbon nanotubes now in progress. © 1998 American Institute of Physics.
Show PACS
61.46.-w Structure of nanoscale materials
78.30.Hv Other nonmetallic inorganics

Significantly enhanced creep resistance in low-melting-point solders through nanoscale oxide dispersions

H. Mavoori and S. Jin

Appl. Phys. Lett. 73, 2290 (1998); http://dx.doi.org/10.1063/1.121800 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanosized, nonreacting, and noncoarsening oxide dispersoids have been incorporated into solder alloys to create an improved solder structure with an ultrafine grain size of ∼2000–5000 Å and significantly enhanced mechanical properties. As much as three orders of magnitude reduction in the steady-state creep rate has been achieved. These solders also exhibit improved (4–5 times higher) tensile strength at low strain rates and improved ductility under high strain rate deformation. It is demonstrated that with a dispersion of TiO2 particles, the Pb–Sn eutectic solder with a low melting point of 183 °C can be made more creep resistant than the 80Au–20Sn eutectic solder with a much higher melting point of 278 °C.
Show PACS
62.20.Hg Creep
81.40.Lm Deformation, plasticity, and creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
82.70.-y Disperse systems; complex fluids
62.20.F- Deformation and plasticity
64.70.D- Solid-liquid transitions
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization

Fabrication of single-crystal lithium niobate films by crystal ion slicing

M. Levy, R. M. Osgood, R. Liu, L. E. Cross, G. S. Cargill, A. Kumar, and H. Bakhru

Appl. Phys. Lett. 73, 2293 (1998); http://dx.doi.org/10.1063/1.121801 (3 pages) | Cited 70 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-μm-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films. © 1998 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.70.+a Pyroelectric and electrocaloric effects
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
77.55.-g Dielectric thin films
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.Cf Surface cleaning, etching, patterning
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Picojoule and submillisecond calorimetry with micromechanical probes

Y. Nakagawa, R. Schäfer, and H.-J. Güntherodt

Appl. Phys. Lett. 73, 2296 (1998); http://dx.doi.org/10.1063/1.121802 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The experimental limits of micromechanical calorimetry at ambient conditions are demonstrated. In the investigation of rotator phase transitions of n alkanes we have obtained a heat sensitivity of 500 pJ for a sample mass of about 7 pg with a time resolution of 0.5 ms. The time resolution is restricted by the thermal response of the bimetallic cantilever. A problem in the precise quantification of the transition enthalpies is heat transport through the atmospheric environment. A calibration of the apparatus constant is proposed to overcome this problem. © 1998 American Institute of Physics.
Show PACS
07.20.Fw Calorimeters
07.10.Cm Micromechanical devices and systems
61.50.-f Structure of bulk crystals
64.70.K- Solid-solid transitions
82.60.Fa Heat capacities and heats of phase transitions
06.20.F- Units and standards

Characteristics of high quality tantalum oxide films deposited by photoinduced chemical vapor deposition

Jun-Ying Zhang, Boon Lim, Ian W. Boyd, and Vincent Dusastre

Appl. Phys. Lett. 73, 2299 (1998); http://dx.doi.org/10.1063/1.121803 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method is presented for the photodeposition of tantalum oxide films from tantalum ethoxide and nitrous oxide using 172 nm radiation. The composition of the tantalum oxides deposited by this technique was determined by x-ray photoelectron spectroscopy while the optical and electrical properties were characterized using ellipsometry, capacitance–voltage, and current–voltage techniques. A leakage current density as low as 3.2×10−7 A cm−2 at a voltage of 10 V is obtained for the as-grown films. This is several orders of magnitude better than for any other Ta2O5 films deposited using either conventional or plasma-chemical vapor deposition techniques. © 1998 American Institute of Physics.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
77.55.-g Dielectric thin films

Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system

Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Jong-Uk Bae, Jeong Soo Byun, and Jae Jeong Kim

Appl. Phys. Lett. 73, 2302 (1998); http://dx.doi.org/10.1063/1.121804 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated the formation of CoSi2 for Ti capped Co on (100) Si substrate with emphasis on the Co–Ti interaction and its effect on thermal stability. A 15 nm thick Ti capping layer is shown to improve the interfacial roughness and thermal stability of CoSi2 film grown on Si substrate compared with TiN capping. The increased uniformity of silicide/Si(100) interface is speculated to result from retarded Co–Si reaction by the formation of CoTi binary phase. And the high thermal stability can be explained by the fact that the amount of Ti atoms in CoSi2 film for Ti capping is much higher than what is in TiN capping. It is likely that the surface Ti diffuses rapidly into CoSi2 grain boundaries and slows down the agglomeration process, thereby increasing thermal stability while Ti in TiN capping did not. © 1998 American Institute of Physics.
Show PACS
68.60.Dv Thermal stability; thermal effects
68.35.Fx Diffusion; interface formation
61.72.Mm Grain and twin boundaries
73.40.Ns Metal-nonmetal contacts
68.35.Ct Interface structure and roughness
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close