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19 Oct 1998

Volume 73, Issue 16, pp. 2233-2380

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Strain-induced large low-field magnetoresistance in Pr0.67Sr0.33MnO3 ultrathin films

H. S. Wang and Qi Li

Appl. Phys. Lett. 73, 2360 (1998); http://dx.doi.org/10.1063/1.122461 (3 pages) | Cited 70 times

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We report magnetoresistance (MR) measurements in very thin Pr0.67Sr0.33MnO3 films (5–15 nm) grown on LaAlO3 (001) substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)−R0]/R0 is ∼92% at H = 800 Oe and T = 70 K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries. © 1998 American Institute of Physics.
Show PACS
73.61.-r Electrical properties of specific thin films
75.70.Ak Magnetic properties of monolayers and thin films
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.47.De Giant magnetoresistance
68.60.Bs Mechanical and acoustical properties
75.30.Gw Magnetic anisotropy

Dielectric breakdown of ferromagnetic tunnel junctions

W. Oepts, H. J. Verhagen, W. J. M. de Jonge, and R. Coehoorn

Appl. Phys. Lett. 73, 2363 (1998); http://dx.doi.org/10.1063/1.122462 (3 pages) | Cited 44 times

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The time-dependent dielectric breakdown of Co/Al2O3/Co(-Fe) magnetic tunnel junctions is investigated. At voltages larger than 1.2 V, almost immediate breakdown of the junction is observed, leading to a decreased (magneto)resistance. The shorts, which are local hot spots, were visualized by making use of a liquid crystal film on top of the junction. The breakdown voltages of a series of nominally identical tunnel junctions measured in a voltage-ramp experiment are shown to increase with increasing ramp speed. The results are analyzed in the framework of several models for the voltage dependent breakdown probability. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.De Giant magnetoresistance
73.40.Rw Metal-insulator-metal structures
77.22.Jp Dielectric breakdown and space-charge effects
75.50.Cc Other ferromagnetic metals and alloys
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
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