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19 Oct 1998

Volume 73, Issue 16, pp. 2233-2380

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Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

T. Kurobe, Y. Sekiguchi, J. Suda, M. Yoshimoto, and H. Matsunami

Appl. Phys. Lett. 73, 2305 (1998); http://dx.doi.org/10.1063/1.121805 (3 pages) | Cited 20 times

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Preferential growth of high-quality cubic GaN on sapphire (0001) substrates was realized at 800 °C under a Ga-rich condition by metal organic molecular beam epitaxy. Hexagonal GaN was grown under a N-rich condition. On the contrary, under the Ga-rich condition, the growing layer changed from a hexagonal phase to a cubic phase as the growth proceeds, which was verified by in situ reflection high-energy electron diffraction. The low-temperature photoluminescence (PL) of this layer was dominated by a sharp and intense excitonic emission of cubic GaN, indicating high crystal quality. The results of PL and x-ray diffraction indicate that the polytype of GaN can be intentionally controlled by changing V/III ratios without serious degradation of crystal quality. In addition, enhancement of cubic phase growth by using a low-temperature grown buffer layer is also discussed. © 1998 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.66.Fn Inorganic compounds

Ultraviolet cathodoluminescence from diamond layers after doping by means of boron-ion implantation

Johan F. Prins

Appl. Phys. Lett. 73, 2308 (1998); http://dx.doi.org/10.1063/1.121806 (3 pages) | Cited 2 times

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Boron-doped diamond layers have been generated in insulating (type IIa) diamonds by means of ion implantation. Cathodoluminescence measurements were used to monitor the layers during this process. It was found that the activation of the boron acceptors, followed by suitable annealing, gave rise to the appearance of two ultraviolet luminescence bands around 3.5 and 4.6 eV. These same bands had been observed previously in natural, as well as synthetically grown, boron-doped, type IIb diamonds. The results reported in this study, support the conclusion that these bands are related to the presence of boron acceptors and show, in addition, that the acceptor density NA need not be more than the density of the compensating donors ND, as had been postulated. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.up Other materials
61.80.Jh Ion radiation effects
81.05.ub Fullerenes and related materials
81.05.Cy Elemental semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Db Elemental semiconductors and insulators
61.72.Cc Kinetics of defect formation and annealing
71.55.Cn Elemental semiconductors
73.61.Cw Elemental semiconductors

Void-like defects in annealed Czochralski silicon

M. Gao, X. F. Duan, L.-M. Peng, and J. Li

Appl. Phys. Lett. 73, 2311 (1998); http://dx.doi.org/10.1063/1.121807 (2 pages) | Cited 1 time

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Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. © 1998 American Institute of Physics.
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61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.05.Cy Elemental semiconductors
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing
79.20.Kz Other electron-impact emission phenomena

Refractive index and absorption of GaAs quantum wells across excitonic resonances

M. V. Marquezini, J. Tignon, T. Hasche, and D. S. Chemla

Appl. Phys. Lett. 73, 2313 (1998); http://dx.doi.org/10.1063/1.121808 (3 pages) | Cited 6 times

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We present simultaneous measurement of the refractive index and absorption coefficient in a AlGaAs/GaAs multiple quantum well structure near the band gap by Fourier transform spectral interferometry. Both quantities were measured across heavy- and light-hole excitons for temperatures ranging from liquid helium to room temperature. The experimental results are analyzed using an analytical expression for the complex dielectric function of Wannier excitons in fractional dimension. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Observation of a leaky wave guide resonance mode in polycrystalline silicon structures using infrared spectroscopic ellipsometry

F. Ferrieu

Appl. Phys. Lett. 73, 2316 (1998); http://dx.doi.org/10.1063/1.122506 (3 pages)

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Optical constants of polycrystalline silicon, used as the gate electrode material in semiconductor technology, have been analyzed by infrared spectroscopic ellipsometry. In the optical refractive indices n, k of the polycrystalline silicon material, we observed an unexpected absorption resonance at 1280 cm−1. The same effect is seen with different layer thicknesses and different polycrystalline texture. The absorption peak is not seen with an additional capping silicon oxide layer on top of the stack. This effect does not arise from an intrinsic absorption of the polysilicon but rather because of a longitudinal mode excitation present in the underlying silicon oxide layer. In the oxide infrared reststrahlen band, the incident electromagnetic radiation is totally reflected at the polysilicon/oxide interface. Further evidence for the mechanism is obtained from observation of a polysilicon/nitride/silicon sample. © 1998 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Ty Semiconductor-insulator-semiconductor structures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
42.79.Gn Optical waveguides and couplers

Photoinduced and thermal stress in silicon microcantilevers

Panos G. Datskos, Slobodan Rajic, and Irene Datskou

Appl. Phys. Lett. 73, 2319 (1998); http://dx.doi.org/10.1063/1.121809 (3 pages) | Cited 26 times

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The photogeneration of free charge carriers in a semiconductor gives rise to mechanical strain. We measured the deflection of silicon microcantilevers resulting from photoinduced stress. The excess charge carriers responsible for the photoinduced stress, were produced via photon irradiation from a diode laser with wavelength λ = 780 nm. For Si microcantilevers, the photoinduced stress is of opposite direction and about four times larger than the stress resulting from only thermal excitation. In this letter we report on our study of the photoinduced stress in silicon microcantilevers and discuss their temporal and photometric response. © 1998 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
72.40.+w Photoconduction and photovoltaic effects
81.05.Cy Elemental semiconductors
62.20.F- Deformation and plasticity
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Structure and photoluminescence of single AlGaAs/GaAs quantum dots grown in inverted tetrahedral pyramids

Arno Hartmann, Yann Ducommun, Laurent Loubies, Klaus Leifer, and Eli Kapon

Appl. Phys. Lett. 73, 2322 (1998); http://dx.doi.org/10.1063/1.121810 (3 pages) | Cited 20 times

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Arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition in inverted tetrahedral pyramids on {111}B GaAs substrates are investigated. Cross-sectional atomic force microscopy images evidence a pronounced thickening of the GaAs quantum well layer at the tip of the pyramid, giving rise to a lens-like QD structure. Low-temperature photoluminescence and cathodoluminescence spectra show distinct luminescence from the dots, exhibiting filling of QD states separated by 33 meV at increased carrier densities. Luminescence linewidths of 15 meV and line energy variations of less than 5 meV are obtained across mm2 sample areas. © 1998 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors

Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal

M. Nakamura, S. Ishiwari, and A. Tanaka

Appl. Phys. Lett. 73, 2325 (1998); http://dx.doi.org/10.1063/1.121811 (3 pages) | Cited 21 times

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Number of Cu atom(s) in the 1.014 eV copper center in silicon crystal was determined from an accurately measured relationship between the photoluminescence (PL) intensity of the center and Cu concentration in the crystal. For Cu concentrations lower than about 1×1014 atom/cm3, the PL intensity increased linearly with increasing Cu concentration. From this result and the law of mass action, it was concluded that the Cu center had only one Cu atom in it, contradicting the long-believed pair Cu model. Based on already published data and the present result, a structural model in which the Cu atom was bonded at the center of the Si–Si bond was presented for the Cu center. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
71.55.Cn Elemental semiconductors

Effect of curvature and stress on reaction rates at solid interfaces

J. Tersoff, Yuhai Tu, and G. Grinstein

Appl. Phys. Lett. 73, 2328 (1998); http://dx.doi.org/10.1063/1.121812 (3 pages) | Cited 11 times

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We analyze the effect of interface curvature and stress on reaction rates at solid–solid or solid–fluid interfaces. Curvature affects the forward and reverse reactions differently, and cannot be related simply to an interface energy. To describe the effect of stress requires at least two parameters each for forward and reverse reactions. The distribution of local configurations may be ignored to linear order; but beyond the linear regime, this effect can cause large deviations from the expected exponential dependence. © 1998 American Institute of Physics.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.20.-w Chemical kinetics and dynamics
68.35.Ct Interface structure and roughness
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Md Surface thermodynamics, surface energies

Energy levels of Zn in Si1−XGeX alloys

S. Voß, H. Bracht, N. A. Stolwijk, P. Kringhøj, and A. Nylandsted Larsen

Appl. Phys. Lett. 73, 2331 (1998); http://dx.doi.org/10.1063/1.121813 (3 pages) | Cited 4 times

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Deep level transient spectroscopy measurements were performed on Zn-doped Si1−XGeX with X between 0 and 0.34. Our investigations reveal two deep hole traps which are attributed to the acceptor states Zn0/− and Zn−/2− of substitutional Zn. Taking into account band-offset data for Si1−XGeX, we have found that the energy level related to Zn0/− is horizontally aligned across the composition-dependent band gap which gives evidence for a highly localized defect state. The defect level related to the second hole trap decreases with increasing Ge content. © 1998 American Institute of Physics.
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71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoluminescence decay dynamics of ion-irradiated porous silicon: Evidence for the absence of carrier migration

Satoshi Tanaka, Hideki Koyama, and Nobuyoshi Koshida

Appl. Phys. Lett. 73, 2334 (1998); http://dx.doi.org/10.1063/1.122453 (3 pages) | Cited 4 times

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We have measured the photoluminescence (PL) decay properties of porous silicon (PS) samples subjected to ion irradiation up to a dose of 1015 cm−2 at 30 kV. It is found that while the PL intensity decreases down to 1/100 of the initial value due to induced nonradiative recombination centers, its decay constant is unchanged. This observation is inconsistent with the hypothesis that photoexcited carriers migrate among the Si nanocrystallites in PS. The results are compared with those of PS samples subjected to thermal annealing instead of ion irradiation, where the PL quenching in this case is accompanied by a large reduction in the decay constant. Infrared absorption spectra of ion-irradiated samples show essentially no chemical bonding change. In contrast, those of the annealed samples show loss of hydrogen bonding and increase of surface oxidation. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
81.05.Cy Elemental semiconductors
61.43.Gt Powders, porous materials
81.05.Rm Porous materials; granular materials
61.50.Lt Crystal binding; cohesive energy
78.30.Am Elemental semiconductors and insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization

Electrical properties of wafer-bonded GaAs/Si heterojunctions

Y. C. Zhou, Z. H. Zhu, D. Crouse, and Y. H. Lo

Appl. Phys. Lett. 73, 2337 (1998); http://dx.doi.org/10.1063/1.122454 (3 pages) | Cited 15 times

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This letter reports on the fabrication and electrical characterization of wafer-fused GaAs/Si heterojunctions. A detailed study of the effect of surface preparation on bonding GaAs to Si was performed. The current–voltage (I–V) characteristics of both n-GaAs/n-Si and p-GaAs/p-Si were measured from 77 K to room temperature. The forward I–V characteristics were analyzed using a numerical model that includes thermionic emission across the heterojunction. Specifically, a p-GaAs/p-Si heterointerface of high electrical quality was obtained by direct hydrophobic bonding. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
81.65.-b Surface treatments
68.35.Gy Mechanical properties; surface strains

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

Sergei Koveshnikov and Oleg Kononchuk

Appl. Phys. Lett. 73, 2340 (1998); http://dx.doi.org/10.1063/1.122455 (3 pages) | Cited 14 times

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Gettering of Cu and Ni by 2.3 MeV Si ion-implantation-induced defects has been investigated in epitaxial silicon as a function of annealing temperature, time, and cooling rate. Secondary ion mass spectrometry revealed two distinct gettering regions, the position of which correlated with the ion projected range Rp and approximately half of Rp. Gettering experiments performed on samples with low metal impurity concentration have shown that capture of Cu and Ni in the two gettering regions occurred during high-temperature annealing, indicating a segregation-induced gettering mechanism. The binding energies of Cu and Ni are higher in the shallow Rp/2 region than in the Rp region. © 1998 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Cy Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
71.55.Cn Elemental semiconductors
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing
81.65.Tx Gettering

Origin of the charge to breakdown distributions in thin silicon dioxide films

S. Okhonin and P. Fazan

Appl. Phys. Lett. 73, 2343 (1998); http://dx.doi.org/10.1063/1.121686 (2 pages) | Cited 2 times

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This letter shows that in thin silicon dioxide films the charge to breakdown distribution can have two origins. It can be related to the oxide thickness variation across the wafer or to the statistical nature of the breakdown event. The oxide nonuniformity is a major factor in the case of stress-induced-bulk-charge enhanced breakdown. © 1998 American Institute of Physics.  
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77.22.Jp Dielectric breakdown and space-charge effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.61.Ng Insulators
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