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Applied Physics Letters / Volume 73 / Issue 17 / SEMICONDUCTORS
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Appl. Phys. Lett. 73, 2447 (1998); http://dx.doi.org/10.1063/1.122477 (3 pages)

Single- and multi-wall carbon nanotube field-effect transistors

R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

(Received 1 July 1998; accepted 24 August 1998)

We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors. © 1998 American Institute of Physics.

© 1998 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon, nanostructured materials, field effect transistors, molecular electronics, electric admittance, hole mobility

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.122477

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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  16. The position of the sharp drop in the I–VG curve was found to depend on the sweep direction, but the voltage range over which the drop occurs showed no hysteresis.

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