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26 Oct 1998

Volume 73, Issue 17, pp. 2393-2529

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Diamondlike carbon deposition on silicon using radio-frequency inductive plasma of Ar and C2H2 gas mixture in plasma immersion ion deposition

D. H. Lee, X. M. He, K. C. Walter, M. Nastasi, J. R. Tesmer, M. Tuszewski, and D. R. Tallant

Appl. Phys. Lett. 73, 2423 (1998); http://dx.doi.org/10.1063/1.122469 (3 pages) | Cited 23 times

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Diamondlike carbon (DLC) was deposited on silicon using a plasma immersion ion deposition (PIID) method. Inductive radio-frequency plasma sources were used to generate Ar and C2H2 plasmas at low gas pressures ranging from 0.04 to 0.93 Pa. The film stress and hardness were sharply dependent upon bias voltage at an operating pressure of 0.04 Pa. A maximum hardness of 30 GPa and compressive stress of 9 GPa was observed at a pulsed bias of −150 V bias (carbon energy of 80 eV). The mechanical properties of DLC films are correlated with UV Raman peak positions which infer sp3-bonded carbon contents. © 1998 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Tr Fullerenes and related materials
62.20.Qp Friction, tribology, and hardness

Te substitution in disordered dilute Se1−xTex alloys

A. K. Bhatnagar, Vipin Srivastava, and K. V. Reddy

Appl. Phys. Lett. 73, 2426 (1998); http://dx.doi.org/10.1063/1.122470 (3 pages) | Cited 3 times

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Photoacoustic absorption measurements at room temperature are reported for Se1−xTex alloys in both crystalline and amorphous states for 0<x ⩽ 0.3. The optical energy gap thus measured shows two features: (a) the gap decreases linearly as x increases with a change of slope at x = 0.1 for both crystalline and amorphous alloys; and (b) the difference in the gaps corresponding to the amorphous and crystalline phase remains remarkably constant over the entire range of x(0–0.3) studied here. We attribute the result (a) to the onset of “quantum percolation” at x = 0.1, and deduce from (b) that introduction of Te apparently does not affect the structural disorder. The results are argued to yield vital information about the restrictive nature of Te substitution into host Se. © 1998 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
61.43.Fs Glasses
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
71.55.Jv Disordered structures; amorphous and glassy solids
78.40.Pg Disordered solids
78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

The thickness dependence of the flow stress of capped and uncapped polycrystalline Ag thin films

Mauro J. Kobrinsky and Carl V. Thompson

Appl. Phys. Lett. 73, 2429 (1998); http://dx.doi.org/10.1063/1.122471 (3 pages) | Cited 30 times

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The flow stress of capped and uncapped polycrystalline silver films on oxidized silicon wafers is reported as a function of Ag film thickness (in the range of 0.2–1.2 μm) and temperature (in the range of −50–500 °C). While the flow stress in capped films increases with decreasing film thickness, the flow stress in uncapped films increases when film thickness is decreased from 1.2 to 0.5 μm, but then decreases with further decreases in film thickness. A high temperature regime of purely plastic strain accommodation extends to lower temperatures in thinner uncapped films than in capped films, with a transition temperature to elastoplastic behavior characterized by an apparent activation energy consistent with diffusive mechanisms of strain relief. These results suggest that surface diffusion to, and down, grain boundaries (whose spacing scale with film thickness) mediates strain accommodation in uncapped films. © 1998 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
83.10.Gr Constitutive relations
68.35.Fx Diffusion; interface formation
61.72.Mm Grain and twin boundaries

Characterization of pitting corrosion in aluminum films by light scattering

Y.-P. Zhao, C.-F. Cheng, G.-C. Wang, and T.-M. Lu

Appl. Phys. Lett. 73, 2432 (1998); http://dx.doi.org/10.1063/1.122472 (3 pages) | Cited 7 times

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We report a detailed study of the morphology of pits formed by corrosion of aluminum thin films using an in-plane light scattering technique. We show that the corrosion front of the Al thin film can be treated as a quasi-two-level random rough surface. Based on an elastic diffraction theory, we are able to determine the average depth, the area, and the density of pits, as well as the fractal dimension of the surface. Using the advantages of light scattering, one can quantify the morphological parameters of corroded films in situ and nondestructively. © 1998 American Institute of Physics.
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81.05.Bx Metals, semimetals, and alloys
81.65.Kn Corrosion protection
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Bz Metals and metallic alloys
68.60.Bs Mechanical and acoustical properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Site-selective radiation damage of collapsed carbon nanotubes

Vincent H. Crespi, Nasreen G. Chopra, Marvin L. Cohen, A. Zettl, and Velimir Radmilovíc

Appl. Phys. Lett. 73, 2435 (1998); http://dx.doi.org/10.1063/1.122473 (3 pages) | Cited 8 times

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Carbon nanotubes can flatten into collapsed tubes with bulbs along either edge. The strong anisotropy in the graphitic radiation damage threshold both explains the rapid destruction of face-on flattened nanotubes and can be exploited to selectively modify the structure of edge-on flattened nanotubes, thereby creating one-dimensional sp2 carbon with noncontinuous transverse boundary conditions. © 1998 American Institute of Physics.
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61.82.Rx Nanocrystalline materials
61.80.Fe Electron and positron radiation effects
61.80.Az Theory and models of radiation effects
61.48.-c Structure of fullerenes and related hollow and planar molecular structures

Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces

Jian-hong Zhu, K. Brunner, and G. Abstreiter

Appl. Phys. Lett. 73, 2438 (1998); http://dx.doi.org/10.1063/1.122474 (3 pages) | Cited 7 times

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Step bunching with a bunching unit of a four-atomic step has been observed on vicinal Si(113) surfaces which are misoriented by 0.37° towards a direction about 36° off [math10]. A strong short-range attractive interaction and a long-range repulsive interaction between the four-atomic steps have been revealed. The influence of the repulsive interaction is observed even at about 700 °C. The bunching can be enhanced by optimizing the growth conditions followed by annealing. The experiments confirm the low surface energy of the Si(113) plane. © 1998 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Md Surface thermodynamics, surface energies
61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Octahedral boron nitride fullerenes formed by electron beam irradiation

D. Golberg, Y. Bando, O. Stéphan, and K. Kurashima

Appl. Phys. Lett. 73, 2441 (1998); http://dx.doi.org/10.1063/1.122475 (3 pages) | Cited 111 times

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Here we report on the formation of fullerenes with a reduced number of layers (typically ⩽ 3) in boron nitride (BN) which was subjected to in situ electron irradiation at 20 and 490 °C in a high resolution 300 kV transmission electron microscope (HRTEM). The BN fullerenes exhibited B/N stoichiometry of ∼ 1 as confirmed by electron energy loss spectroscopy using a 1 nm electron probe. The fullerene HRTEM images revealed rectangle-like shapes when viewed in specific projections, unlike the quasispherical carbon fullerene morphology. The octahedral BN fullerene model [O. Stéphan, Y. Bando, A. Loiseau, F. Willaime, N. Shramchenko, T. Tamiya, and T. Sato, Appl. Phys. A 67, 107 (1998)] is verified by the BN fullerene observations at different viewing angles. © 1998 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
61.80.Fe Electron and positron radiation effects
61.82.Rx Nanocrystalline materials
81.05.ub Fullerenes and related materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
79.20.Kz Other electron-impact emission phenomena
61.66.Bi Elemental solids
61.66.Dk Alloys
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