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26 Oct 1998

Volume 73, Issue 17, pp. 2393-2529

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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, E. Simoen, and C. Claeys

Appl. Phys. Lett. 73, 2444 (1998); http://dx.doi.org/10.1063/1.122476 (3 pages) | Cited 7 times

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In this letter, the role of the free electron distribution on the capture kinetics of repulsive random telegraph signals in deep submicron n-channel metal–oxide–semiconductor field-effect transistors is studied. The inversion layer density and profile is varied by changing simultaneously the substrate and the gate bias of the transistor which is in linear operation at a constant drain current I. Detailed results are obtained for a class of repulsive trap centers when charged by an electron, which show a I−m variation of the capture time constant, with m>1. Such a nonstandard behavior can be understood in the framework of the Coulomb blockade model, whereby the image charge of the trapped carrier is stored on the gate electrode and in the inversion and depletion layer in the silicon substrate. As is shown here the capture time constant is a unique function of the ratio of the inversion layer surface density and the squared thickness of the inversion layer. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
72.70.+m Noise processes and phenomena
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Single- and multi-wall carbon nanotube field-effect transistors

R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris

Appl. Phys. Lett. 73, 2447 (1998); http://dx.doi.org/10.1063/1.122477 (3 pages) | Cited 986 times

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We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors. © 1998 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
72.80.Rj Fullerenes and related materials

Green electroluminescence from Er-doped GaN Schottky barrier diodes

A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield

Appl. Phys. Lett. 73, 2450 (1998); http://dx.doi.org/10.1063/1.122478 (3 pages) | Cited 47 times

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Visible light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga, and Er) and a plasma source for N2. Al was utilized for both the Schottky (small-area) and ground (large-area) electrodes. Strong green light emission was observed under reverse bias, with weaker emission present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413 and at 666/672 nm. The green emission lines have been identified as Er transitions from the 2H11/2 and 4S3/2 levels to the 4I15/2 ground state and the blue and red peaks as the 2H9/2 and 4F9/2 Er transitions to the same ground state. The reverse bias EL intensity was found to increase linearly with bias current. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Electrochemical determination of the ionization potential and electron affinity of poly(9,9-dioctylfluorene)

S. Janietz, D. D. C. Bradley, M. Grell, C. Giebeler, M. Inbasekaran, and E. P. Woo

Appl. Phys. Lett. 73, 2453 (1998); http://dx.doi.org/10.1063/1.122479 (3 pages) | Cited 327 times

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We report cyclic voltammetry measurements for the blue electroluminescent conjugated polymer poly(9,9-dioctylfluorene). Both oxidation and reduction potentials are determined and thus estimates of both the ionization potential Ip and electron affinity Ea of the polymer are obtained for the same sample under the same experimental conditions. We estimate Ip = 5.80 eV and Ea = 2.12 eV. These results disagree with the common assumption that Ea is, to good approximation, given by the difference between Ip and the optical gap. Measurements on indium tin oxide/polyfluorene/calcium light emitting diode structures are consistent with the deductions from the electrochemical data. © 1998 American Institute of Physics.
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82.80.Fk Electrochemical methods
42.70.Jk Polymers and organics
82.30.-b Specific chemical reactions; reaction mechanisms
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.60.Fi Electroluminescence

Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon

N. M. J. Conway, A. Ilie, J. Robertson, W. I. Milne, and A. Tagliaferro

Appl. Phys. Lett. 73, 2456 (1998); http://dx.doi.org/10.1063/1.122480 (3 pages) | Cited 42 times

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Electronic applications of diamond-like carbon have been limited by its relatively high disorder and defect density. We find that the density of paramagnetic defects in hydrogenated tetrahedral amorphous carbon and the Urbach slope of the optical absorption edge can be reduced by annealing at 300 °C, with little effect on the optical gap. This leads to a reduction in the dark conductivity and an increase in the photosensitivity. The effect is attributed to the migration of hydrogen through the C–C network, to allow better passivation of dangling bonds and a modification of the more weakly bonded sp2 clusters with narrower local band gaps. © 1998 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
72.80.Ng Disordered solids
81.05.Gc Amorphous semiconductors
72.40.+w Photoconduction and photovoltaic effects
76.30.Mi Color centers and other defects
78.40.Fy Semiconductors
78.40.Pg Disordered solids
72.80.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors

Fluorine diffusion and accumulation in Si step-doped InAlAs layers

A. Wakejima, K. Onda, A. Fujihara, E. Mizuki, and M. Kanamori

Appl. Phys. Lett. 73, 2459 (1998); http://dx.doi.org/10.1063/1.122481 (3 pages) | Cited 3 times

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The quantitative relation between fluorine (F) accumulation and Si donor concentration in n-InAlAs layers on InP substrate was investigated for several kinds of step-doped InAlAs samples using secondary ion mass spectroscopy. From the depth profile of F and Si donors in a periodic i-/n-InAlAs sample, we found that F accumulates only in n-InAlAs layers, passing through i-InAlAs layers. We also found that the amount of F accumulation in an n-InAlAs layer depends on the Si doping concentration. The experimental results can be explained by considering two states of F. In one state, F is bound to a Si donor and immobile, and in the other it is free and can diffuse. © 1998 American Institute of Physics.
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61.72.S- Impurities in crystals
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.J- Diffusion of impurities
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Eq III-V semiconductors

Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon

Hai-An Lin, Ralph J. Jaccodine, and Michael S. Freund

Appl. Phys. Lett. 73, 2462 (1998); http://dx.doi.org/10.1063/1.122482 (3 pages) | Cited 11 times

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It has been demonstrated in this letter that spectral shifts arising from the tip-induced band bending on the lightly doped silicon can be eliminated by forming an accumulation layer in p-type silicon or an inversion layer in n-type silicon by using a Pt–Ir tip. Illumination is also required for n-type silicon in order to eliminate shifts associated with deep depletion caused by tunneling leakage currents. Using the approaches described herein, energy gaps of approximately 1.1 eV are determined for both p-type and n-type silicon. Furthermore, identical bias polarity is observed in current–voltage curves for both n-type and p-type silicon, and can be explained by the direction of the band bending induced by Pt–Ir on lightly doped samples. These results suggest that scanning tunneling spectroscopy can be used to reveal various features associated with surface states and bulk properties in lightly doped samples by using high work function metals such as Pt–Ir in place of lower work function metals such as W. © 1998 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.80.Cw Elemental semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
71.55.Cn Elemental semiconductors
71.20.Mq Elemental semiconductors

Carbon diffusion in silicon

P. Werner, U. Gösele, H.-J. Gossmann, and D. C. Jacobson

Appl. Phys. Lett. 73, 2465 (1998); http://dx.doi.org/10.1063/1.122483 (3 pages) | Cited 25 times

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Carbon diffusion in silicon has been investigated by using a superlattice structure of carbon spikes (10 nm-wide, carbon concentration >1019 cm−3, spikes spaced 100 nm apart) grown epitaxially by Si molecular beam epitaxy. Samples were annealed in the range between 680 and 850 °C. The diffusive behavior of carbon was monitored by secondary ion mass spectrometry. Carbon diffusion profiles observed at temperatures above 800 °C show highly nonregular behavior. The diffusion results are interpreted in terms of the kick-out mechanism. © 1998 American Institute of Physics.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Transport properties of two-dimensional electron gases containing InAs self-assembled dots

G. H. Kim, D. A. Ritchie, M. Pepper, G. D. Lian, J. Yuan, and L. M. Brown

Appl. Phys. Lett. 73, 2468 (1998); http://dx.doi.org/10.1063/1.122484 (3 pages) | Cited 22 times

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We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

Jian-Ping Zhang, Dian-Zhao Sun, Xiao-Liang Wang, Mei-Ying Kong, Yi-Ping Zeng, Jin-Min Li, and Lan-Ying Lin

Appl. Phys. Lett. 73, 2471 (1998); http://dx.doi.org/10.1063/1.122485 (2 pages) | Cited 7 times

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In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. © 1998 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Nitrogenated tetrahedral amorphous carbon films prepared by ion-beam-assisted filtered cathodic vacuum arc technique for solar cells application

L. K. Cheah, X. Shi, E. Liu, and J. R. Shi

Appl. Phys. Lett. 73, 2473 (1998); http://dx.doi.org/10.1063/1.122486 (3 pages) | Cited 18 times

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Fabrication and characterization of nitrogenated tetrahedral amorphous carbon (ta-C:N) semiconductor/crystalline p-type silicon (p-Si) heterojunction structures are reported. The electron-hole pairs generated from both ta-C:N and Si depletion regions were observed from photoresponse measurements. The peaks are centered at about 540 and 1020 nm, which correspond to the optical absorption edge of ta-C:N and p-Si, respectively. The reverse current increased by three orders of magnitude when the structures were exposed to AM1 light. A photovoltaic effect was observed from ta-C:N and the values of short circuit current, open circuit voltage, and field factor obtained are 5.05 mA cm−2, 270 mV, and 0.2631, respectively. © 1998 American Institute of Physics.
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84.60.Jt Photoelectric conversion
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
78.66.Jg Amorphous semiconductors; glasses
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.50.Pz Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors

Plasma heating in highly excited GaN/AlGaN multiple quantum wells

K. C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoç

Appl. Phys. Lett. 73, 2476 (1998); http://dx.doi.org/10.1063/1.122487 (3 pages) | Cited 9 times

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Time-resolved photoluminescence (PL) spectroscopy was used to investigate carrier distributions in a GaN/AlGaN multiple quantum well (MQW) sample under high excitation intensities necessary to achieve lasing threshold. Room temperature PL spectra showed optical transitions involving both confined and unconfined states in the quantum well structure. Analysis of the experimental results using a microscopic theory, indicates that at high excitation the carrier distributions are characterized by plasma temperatures which are significantly higher than the lattice temperature. The implications of our findings on GaN MQW laser design are also discussed. © 1998 American Institute of Physics.
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73.50.Mx High-frequency effects; plasma effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
78.47.-p Spectroscopy of solid state dynamics
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material

Cheol Koo Hahn, Young Ju Park, Eun Kyu Kim, Suk-Ki Min, Suk Koo Jung, and Jung Ho Park

Appl. Phys. Lett. 73, 2479 (1998); http://dx.doi.org/10.1063/1.122488 (3 pages) | Cited 15 times

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We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga2O3 thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on Ga2O3 mask layer, the InGaAs QDs formed on the patterned substrate results in coalesced islands unlike those formed on the nonpatterned substrate. The estimation of the relative volume of the islands per unit area revealed that the desorption process as well as the migration of the Ga and In adatoms might occur on the Ga2O3 layer during the growth process, providing a good selective growth of self-assembled QDs. © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.Fx Diffusion; interface formation
85.40.Hp Lithography, masks and pattern transfer

Characterization of heavily carbon-doped InGaAsP layers grown by chemical beam epitaxy using tetrabromide

Hideo Sugiura, Manabu Mitsuhara, and Susumu Kondo

Appl. Phys. Lett. 73, 2482 (1998); http://dx.doi.org/10.1063/1.122489 (3 pages) | Cited 2 times

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Carbon doping in InGaAsP films using tetrabromide (CBr4) in chemical beam epitaxy has been studied, focusing on the relationship between the composition and the carrier concentration. The films with an equivalent wavelength of more than 1.4 μm have p-type conduction while the films with less than 1.3 μm have n-type conduction. Specifically, the hole concentration decreases from 7×1019 to 7×1018 cm−3 with decreasing wavelength in the 1.4–1.66 μm range, while electron concentration increases from 5×1018 to 2×1019 cm−3 with decreasing wavelength in the 1.1–1.3 μm range. Secondary-ion mass spectroscopy reveals that the incorporated carbon atom concentration is the same between an InGaAs film and a 1.4 μm equivalent wavelength InGaAsP film under a fixed CBr4 flux. Increase in gallium mole fraction monotonously increases hole concentrations under a fixed group-V mole fraction. We have found that the In1−xGaxAs1−yPy conduction type is mainly determined by two parameters: the Ga and P mole fractions, i.e., p type if x>y. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Nq Composition and phase identification

Multisubband hot-electron transport in GaN-based quantum wells

N. A. Zakhleniuk, C. R. Bennett, B. K. Ridley, and M. Babiker

Appl. Phys. Lett. 73, 2485 (1998); http://dx.doi.org/10.1063/1.122490 (3 pages) | Cited 8 times

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A simple rigorous analytical theory of two-dimensional (2D) nonequilibrium electrons occupying an arbitrary number of subbands in a quantum well is developed. The electric-field dependence of electron mobility and the average kinetic energy for AlN/GaN quantum wells are presented. At temperatures below 200 K the electron mobility is controlled mainly by the acoustic phonon scattering and it is a nonmonotonous function of the electric field, which has a maximum. At room and higher temperatures the interaction with both acoustic and polar optical phonons determine the hot-electron mobility and it depends very weakly on the electric field. Both the mobility and average energy of 2D electrons are smaller than that for three-dimensional (3D) electrons in the bulk semiconductor. Our theory provides a self-consistent transition from the 2D to the 3D regime of electron transport with increasing electric field accompanied by the occupation of an increasingly large number of subbands by the electrons. © 1998 American Institute of Physics.
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73.61.Ga II-VI semiconductors
73.50.Fq High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions

Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

V. Gružinskis, J. Liberis, A. Matulionis, P. Sakalas, E. Starikov, P. Shiktorov, B. Szentpáli, V. Van Tuyen, and H. L. Hartnagel

Appl. Phys. Lett. 73, 2488 (1998); http://dx.doi.org/10.1063/1.122491 (3 pages) | Cited 3 times

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Microwave noise in GaAs planar-doped barrier diodes is investigated over a wide range of bias. Suppression of shot noise at intermediate densities of current and an onset of hot-electron noise at high densities are evidenced by experimental data and Monte Carlo simulation. © 1998 American Institute of Physics.  
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85.30.Kk Junction diodes
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Td Noise processes and phenomena
02.70.Rr General statistical methods
73.61.Ey III-V semiconductors
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