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2 Nov 1998

Volume 73, Issue 18, pp. 2543-2690

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Stress and relief of misfit strain of Ge/Si(111)

J. Walz, A. Greuer, G. Wedler, T. Hesjedal, E. Chilla, and R. Koch

Appl. Phys. Lett. 73, 2579 (1998); http://dx.doi.org/10.1063/1.122511 (3 pages) | Cited 15 times

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The intrinsic stress and morphology of the Stranski–Krastanow system Ge/Si(111) have been investigated at deposition temperatures of 700–950 K. In a broad range of intermediate temperatures, only one distinct decline of stress is observed at the onset of three-dimensional islanding. Supported by a recent transmission electron microscopy study, the results demonstrate that the strain of Ge/Si(111), where the substrate surface in contrast to Ge/Si(001) is the glide plane for dislocations, is relieved by incorporation and continuous rearrangement of dislocations during the island stage. © 1998 American Institute of Physics.
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68.35.Ct Interface structure and roughness
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Microstructure of Ti/Al ohmic contacts for n-AlGaN

S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and Paul K. Chu

Appl. Phys. Lett. 73, 2582 (1998); http://dx.doi.org/10.1063/1.122512 (3 pages) | Cited 61 times

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Transmission electron microscopy was employed to evaluate the microstructure of Al/Ti ohmic contacts to AlGaN/GaN heterostructure field-effect transistor structures. Contact resistance was found to depend on the structure and composition of the metal and AlGaN layers, and on atomic structure of the interface. A 15–25-nm-thick interfacial AlTi2N layer was observed at the contact-AlGaN interface. Formation of such nitrogen-containing layers appears to be essential for ohmic behavior on n-type III-nitride materials suggesting a tunneling contact mechanism. Contact resistivity was found to increase with Al fraction in the AlGaN layer. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
73.40.Ns Metal-nonmetal contacts
68.35.Ct Interface structure and roughness
73.40.Cg Contact resistance, contact potential

Polytypoid structures in annealed In2O3–ZnO films

Y. Yan, S. J. Pennycook, J. Dai, R. P. H. Chang, A. Wang, and T. J. Marks

Appl. Phys. Lett. 73, 2585 (1998); http://dx.doi.org/10.1063/1.122513 (3 pages) | Cited 27 times

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Atomic-resolution Z-contrast images demonstrate unambiguously that the annealed, metalorganic chemical vapor deposition derived transparent In2O3–ZnO films have a polytypoid microstructure, consisting of ZnO slabs of variable width separated by single In–O octahedral layers. These In–O layers induce a polarity inversion in the two adjacent ZnO layers, which is reversed again by a mirror domain boundary inside each ZnO slab. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Hd Other semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Observation of CuPt-A type atomic ordering in AlxIn1−xAs alloys

Tohru Suzuki, Toshinari Ichihashi, and Tatsuo Nakayama

Appl. Phys. Lett. 73, 2588 (1998); http://dx.doi.org/10.1063/1.122514 (3 pages) | Cited 7 times

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CuPt-A type atomic ordering, which has been reported for only Al0.5In0.5P and Ga0.5In0.5P, was observed in Al-rich AlxIn1−xAs grown on (001) InP substrates by solid-source molecular-beam epitaxy; only the triple-period-A type ordering in the [111]A directions has been previously reported for this alloy system grown under a similar growth condition. While the triple-period-A type ordering was observed in Al0.5In0.5As grown with a (2×3) surface reconstruction, the CuPt-A type ordering was observed in Al-rich AlxIn1−xAs when the surface showed a (1×2) surface reconstruction during growth. This observation provides strong support for the previous inference that the (1×2) surface reconstruction gives rise to CuPt-A type ordering. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.66.Fn Inorganic compounds

Structure and optical properties of amorphous diamond films prepared by ArF laser ablation as a function of carbon ion kinetic energy

Vladimir I. Merkulov, Douglas H. Lowndes, G. E. Jellison, A. A. Puretzky, and D. B. Geohegan

Appl. Phys. Lett. 73, 2591 (1998); http://dx.doi.org/10.1063/1.122515 (3 pages) | Cited 40 times

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Amorphous carbon films with variable sp3 content were produced by ArF (193 nm) pulsed laser deposition. Electron energy loss spectroscopy and spectroscopic ellipsometry were employed to systematically study changes in the bonding and optical properties of the carbon films as a function of the kinetic energy of ablated C ions, which was measured using an ion probe. The measurements reveal that the films with the most diamond-like properties are obtained at the C ion kinetic energy of ∼90 eV. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for interlaboratory comparisons. © 1998 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
61.43.Dq Amorphous semiconductors, metals, and alloys
78.66.Db Elemental semiconductors and insulators
81.05.ub Fullerenes and related materials
81.15.Fg Pulsed laser ablation deposition
79.20.Kz Other electron-impact emission phenomena
68.55.-a Thin film structure and morphology
81.05.Gc Amorphous semiconductors

Influence of the water layer on the shear force damping in near-field microscopy

S. Davy, M. Spajer, and D. Courjon

Appl. Phys. Lett. 73, 2594 (1998); http://dx.doi.org/10.1063/1.122516 (3 pages) | Cited 28 times

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The influence of the water layer on the shear force damping is investigated in the case of a perfectly flat mica surface. In ambient conditions it is shown that the damping curve exhibits three particular regimes depending on the tip-sample distance. Moreover, the damping varies significantly over the first hour, pointing out the complexity of the distance control by shear force detection. © 1998 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.Gy Mechanical properties; surface strains

Contrast reversal in scanning capacitance microscopy imaging

Robert Stephenson, Anne Verhulst, Peter De Wolf, Matty Caymax, and Wilfried Vandervorst

Appl. Phys. Lett. 73, 2597 (1998); http://dx.doi.org/10.1063/1.122517 (3 pages) | Cited 21 times

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We have investigated the quantification properties of scanning capacitance microscopy (SCM) by using two dedicated test structures and highlight the response of SCM to changes in dopant density. Our results indicate that contrast reversal occurs and that the SCM output is not always a monotonically increasing signal with decreasing dopant density. Two epitaxially grown staircase structures covering the doping ranges 1014–1020 cm−3 p type and 5×1014–5×1019 cm−3 n type were produced for this study as the turning point in the response function typically occurs at a doping level of around 1017 cm−3. Through the use of a simple simulation model we see that contrast reversal is expected due to a relative shift between the dC/dV curves for different doping levels. The onset of contrast reversal can be adjusted by changing the dc sample bias leading to a shift in the operating position of the SCM, and the significance of this point will be discussed here. © 1998 American Institute of Physics.
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07.79.-v Scanning probe microscopes and components
07.50.-e Electrical and electronic instruments and components
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
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