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2 Nov 1998

Volume 73, Issue 18, pp. 2543-2690

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Suppression of surface cracks on (111) homoepitaxial diamond through impurity limitation by oxygen addition

Isao Sakaguchi, Mikka Nishitani-Gamo, Kian Ping Loh, Shunichi Hishita, Hajime Haneda, and Toshihiro Ando

Appl. Phys. Lett. 73, 2675 (1998); http://dx.doi.org/10.1063/1.122550 (3 pages) | Cited 7 times

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The use of oxygen in improving diamond quality has been investigated by comparing two (111) homoepitaxial diamond films deposited with H2–CH4 and H2–CH4–O2 mixtures by microwave assisted chemical vapor deposition. The (111) diamond deposited using a H2–CH4 mixture showed surface cracks due to the presence of nondiamond phases as well as a significant amount of hydrogen and silicon impurities. The (111) diamond deposited using a H2–CH4–O2 mixture showed an absence of hydrogen and silicon impurities and nondiamond phases, and exhibited a flat surface. The addition of oxygen is one of the suitable methods to produce high-quality (111) homoepitaxial diamond. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.ub Fullerenes and related materials
81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments

Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity

T. Y. Tan

Appl. Phys. Lett. 73, 2678 (1998); http://dx.doi.org/10.1063/1.122551 (3 pages) | Cited 9 times

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Via the combined use of the jump frequency and chemical force formulation methods, a set of generalized mass transport equations has been derived. This set of equations unifies the descriptions of isothermal diffusion, thermomigration induced by a thermal gradient, and segregation and the position-dependent diffusivity arising from the crystal inhomogeneity. The equations reproduce Fick’s laws for the isothermal homogeneous crystal case, and the diffusion-segregation equations for the isothermal inhomogeneous crystal case. Also, a new expression for the heat of transport of thermomigration is obtained. © 1998 American Institute of Physics.
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05.60.-k Transport processes
66.30.Dn Theory of diffusion and ionic conduction in solids
64.75.-g Phase equilibria

Nano-field effect transistor with an organic self-assembled monolayer as gate insulator

J. Collet and D. Vuillaume

Appl. Phys. Lett. 73, 2681 (1998); http://dx.doi.org/10.1063/1.122552 (3 pages) | Cited 55 times

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We demonstrate the realization and functioning of a hybrid (organic/silicon) nanometer-size field effect transistor (nano-FET) having a gate length of 25 nm. The gate insulator is an organic self-assembled monolayer (SAM) of alkyltrichlorosilanes ( ∼ 2 nm thick). We have used densely packed SAMs with functionalized end groups (�CH3, �CH�CH2, ☒COOH) that all exhibit reduced leakage current density (10−8–10−5 A/cm2). This nano-FET is free of punchthrough down to 50 nm, and shows a good field effect behavior at 25 nm. This demonstrates the compatibility of these SAMs with semiconductor device processes and their wide capability for applications in nanometer-scale electronics. © 1998 American Institute of Physics.
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85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Direct patterning of surface quantum wells with an atomic force microscope

J. Cortes Rosa, M. Wendel, H. Lorenz, J. P. Kotthaus, M. Thomas, and H. Kroemer

Appl. Phys. Lett. 73, 2684 (1998); http://dx.doi.org/10.1063/1.122553 (3 pages) | Cited 23 times

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We employ an atomic force microscope to directly pattern the electron system of InAs–AlSb surface quantum wells. Sharp and sturdy electron beam deposited tips are developed to withstand the comparatively high (≈μN) forces in the direct patterning process. By direct patterning the InAs surface quantum well we modulate the electron system without any mask. We are therefore able to directly transfer the excellent lithographic resolution of atomic force microscopy to an electron system. The magnetoresistance of such fabricated antidot arrays is discussed. © 1998 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
72.20.My Galvanomagnetic and other magnetotransport effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation

Seung Y. Park, Tetsuhiko Isobe, Mamoru Senna, Robert A. Weeks, and Raymond A. Zuhr

Appl. Phys. Lett. 73, 2687 (1998); http://dx.doi.org/10.1063/1.122554 (3 pages) | Cited 6 times

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Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO2 composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface. © 1998 American Institute of Physics.
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42.70.Ce Glasses, quartz
61.72.up Other materials
61.72.S- Impurities in crystals
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
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