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6 Jul 1998

Volume 73, Issue 1, pp. 1-131

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Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge

J. D. Scofield, P. Bletzinger, and B. N. Ganguly

Appl. Phys. Lett. 73, 76 (1998); http://dx.doi.org/10.1063/1.121728 (3 pages) | Cited 9 times

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Etch rates of up to 2200 Å/min have been achieved on hexagonal silicon carbide (SiC) using dilute mixtures of SF6:Ar in a standard 13.56 MHz asymmetric parallel plate discharge. Furthermore, these etch rates have been realized with excellent pattern anisotropy profiles of approximately 1 at pressures in the range of 100–350 mTorr and the SF6 fraction at or below 50%. An understanding of the mechanisms responsible for the high etch rates in this simple, dilute, gas mixture can be achieved by considering the electrical characteristics of the radio frequency plasma. The conditions defining maximum etch rates are associated with peak fluorine ion and/or radical production, and can be defined entirely in terms of the relative current–voltage phase shift leading to optimal plasma impedance conditions and ultimately to maximal power deposition into the plasma. In addition, this study shows that the pervasive practice of utilizing oxygenated gas chemistries for SiC etching is not required, as previously thought, for carbon saturation and removal in order to obtain high etch rates, good surface morphology, and reliable pattern definition on SiC.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
81.05.Hd Other semiconductors

A method for Fermi energy measurements

A. Tsukernik, M. Slutzky, A. Palevski, S. Luryi, and H. Shtrikman

Appl. Phys. Lett. 73, 79 (1998); http://dx.doi.org/10.1063/1.121729 (3 pages)

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We describe a method of Fermi energy measurement, based on the analysis of thermionic emission and diffusion over a barrier with a built-in charge. The method can be applied to a variety of semiconductors and has been successfully tested by measuring the Fermi energy in GaAs. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications

T. P. Ong, R. Fiordalice, R. Venkatraman, S. Garcia, A. Jain, T. Sparks, J. Farkas, M. Fernandes, M. Gall, D. Jawarani, J. Klein, E. Weitzman, H. Kawasaki, Wei Wu, R. Blumenthal, et al.

Appl. Phys. Lett. 73, 82 (1998); http://dx.doi.org/10.1063/1.121731 (3 pages)

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This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 μm ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/coherent (coh.) PVD Al/coh. PVD Ti and (2) warm PVD Al/CVD Al/coh. PVD Ti or Al/selective CVD Al. The integration of thin coh. PVD Al, deposited with a physical collimator or a variation of ionized metal plasma technique, was found to be the unique and simple solution in providing void-free via and interconnect structures, which have not been reported elsewhere. Excellent electrical and electromigration results have been obtained. © 1998 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
66.30.Qa Electromigration
81.05.Bx Metals, semimetals, and alloys

Electric field control of cathodoluminescence from phosphors excited at low electron energies

C. H. Seager

Appl. Phys. Lett. 73, 85 (1998); http://dx.doi.org/10.1063/1.121732 (3 pages) | Cited 7 times

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It is demonstrated that electric fields applied across phosphor layers strongly influence the cathodoluminescence emitted from these materials at low electron beam energies. The magnitude of these effects suggest that the primary mechanism may be alteration of the relative capture rates of electrons and holes at surface or near-surface defect sites associated with nonradiative energy losses. The sign of these effects in the two materials investigated suggests that the rate limiting step at low electric fields is the capture of electrons. Strong evidence for field-induced polarization and trapping of the beam-created electron-hole pair population is also presented. © 1998 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena

Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator

F. Rahman, B. L. Gallagher, M. Behet, and J. De Boeck

Appl. Phys. Lett. 73, 88 (1998); http://dx.doi.org/10.1063/1.121789 (3 pages) | Cited 3 times

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We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/AlxGa1−xSb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can be changed over a wide range by the application of modest gate voltages. We obtain a dn/dV value of 5×1011 cm2/V for electrons and 1.6×1012 cm2/V for holes at 1.2 K. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

A deep level induced by gamma irradiation in Hg1−xCdxTe

Xinwen Hu, Jiaxiong Fang, Qin Wang, Jun Zhao, Huiqing Lu, Haimei Gong, Shengkun Zhang, and Fang Lu

Appl. Phys. Lett. 73, 91 (1998); http://dx.doi.org/10.1063/1.121790 (2 pages)

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Admittance spectroscopy and deep-level transient spectroscopy measurements have been performed on n+-on-p Hg1−xCdxTe (x = 0.595) planar photodiodes grown by improved zone melt method. After 1.0 Mrads gamma irradiation, a new trap center is observed at 0.19 eV above the valence band, while the well-known 0.15 eV trap level disappears. The trap densities for these two levels are almost the same. We attribute this phenomenon to the gamma irradiation, which produces a compound defect correlated with Hg vacancy. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
61.72.J- Point defects and defect clusters
61.80.Ed γ-ray effects
71.55.Gs II-VI semiconductors

Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si diodes

Salvatore Coffa, Giorgia Franzò, Francesco Priolo, Andrea Pacelli, and Andrea Lacaita

Appl. Phys. Lett. 73, 93 (1998); http://dx.doi.org/10.1063/1.121791 (3 pages) | Cited 31 times

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We provide direct evidence that Er ions incorporated in the depletion layer of a p+–n+ Si junction are efficiently pumped through an impact excitation process with hot carriers. The carriers were accelerated by the electric field present in the depletion layer after being produced by either Zener breakdown of the junction at ∼5 V or by irradiating the diode with an argon laser. Measurements of the electroluminescence yield at 1.54 μm as a function of the reverse bias voltage (and for a constant current through the device) reveal that excitation of Er only occurs at voltages above 1 V, demonstrating that impact is the pumping mechanism. Moreover, we have found that Er ions are only excited within ∼15 nm from the edges of the depletion layer leaving a dark, ∼50 nm thick, region in the central part of the depletion region. Monte Carlo calculations confirmed that only close to the depletion layer edges the energy gained by the carriers in the electric field is high enough to impact excite Er. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
72.80.Cw Elemental semiconductors
72.20.Ht High-field and nonlinear effects
78.60.Fi Electroluminescence

Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

B. Legrand, B. Grandidier, J. P. Nys, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg

Appl. Phys. Lett. 73, 96 (1998); http://dx.doi.org/10.1063/1.121792 (3 pages) | Cited 56 times

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We present cross-sectional scanning tunneling microscopy images and scanning tunneling spectroscopy results of InAs quantum dots grown on GaAs. The samples contain 12 arrays of quantum dots. The analysis of the scanning tunneling microscope images reveals the self-alignment of the dots as well as the different dot interfaces with the under- and overgrown GaAs layers. We measure the strain distribution along the [001] direction in the (110) plane. The roughness of the dot interfaces along the [110] direction is also estimated and local spectroscopy of the dots evidences the electronic confinement (measured gap of 1.25 eV compared with 0.4 eV for bulk InAs). © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

M. P. Petkov, T. Marek, P. Asoka-Kumar, K. G. Lynn, R. S. Crandall, and A. H. Mahan

Appl. Phys. Lett. 73, 99 (1998); http://dx.doi.org/10.1063/1.121793 (3 pages) | Cited 7 times

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In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
68.55.-a Thin film structure and morphology
78.70.Bj Positron annihilation
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

K. Katayama, H. Yao, F. Nakanishi, H. Doi, A. Saegusa, N. Okuda, T. Yamada, H. Matsubara, M. Irikura, T. Matsuoka, T. Takebe, S. Nishine, and T. Shirakawa

Appl. Phys. Lett. 73, 102 (1998); http://dx.doi.org/10.1063/1.121781 (3 pages) | Cited 25 times

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Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film

Mingxiang Wang, Kunji Chen, Lei He, Wei Li, Jun Xu, and Xinfan Huang

Appl. Phys. Lett. 73, 105 (1998); http://dx.doi.org/10.1063/1.121782 (3 pages) | Cited 12 times

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A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus doped hydrogenated amorphous silicon (a-Si:H) film was annealed by cw Ar+ laser scanning. Different from conventionally prepared polycrystalline Si films, it was found that nanocrystalline Si (nc-Si) was formed in our laser annealed sample. Room-temperature green electroluminescence (EL) peaked at 530 nm was achieved from our nc-Si film. Photoluminescence (PL) from the same sample also shows the 530 nm green peak, in addition to the red peak located at 680 nm. The film had a rather high electrical conductivity of 10S/cm as well. The light emitting and highly conductive nc-Si film provides a new possibility to fabricate optoelectronic devices along with the well-developed laser annealing techniques of a-Si:H. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.60.Fi Electroluminescence
78.66.Jg Amorphous semiconductors; glasses
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.61.Jc Amorphous semiconductors; glasses
72.80.Ng Disordered solids
72.80.Cw Elemental semiconductors

Low-cost all-polymer integrated circuits

C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw

Appl. Phys. Lett. 73, 108 (1998); http://dx.doi.org/10.1063/1.121783 (3 pages) | Cited 360 times

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A technology has been developed to make all polymer integrated circuits. It involves reproducible fabrication of field-effect transistors in which the semiconducting, conducting and insulating parts are all made of polymers. The fabrication on flexible substrates uses spin-coating of electrically active precursors and patternwise exposure of the deposited films. In the whole process stack integrity is maintained. Vertical interconnects are made mechanically. As a demonstrator functional 15-bit programmable code generators are fabricated. These circuits still operate when the foils are sharply bent. Due to the limited number of process steps the technology is potentially inexpensive. © 1998 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Complex admittance measurements of polymer light-emitting electrochemical cells: Ionic and electronic contributions

Gang Yu, Yong Cao, Chi Zhang, Yongfang Li, Jun Gao, and Alan J. Heeger

Appl. Phys. Lett. 73, 111 (1998); http://dx.doi.org/10.1063/1.121784 (3 pages) | Cited 34 times

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Measurements of the frequency dependence of the complex admittance are used to separate the ionic and electronic contributions in polymer light-emitting electrochemical cells (LECs). At zero bias, a large polarizability, attributed to salt molecules in the electrolyte, is observed at low frequencies. Ions are generated when the LEC is biased at voltages above the threshold for electrochemical redox doping. Because of the slow ionic response, a novel pulsed drive scheme is proposed: the mean value stabilizes the induced p-i-n junction, while the peak value controls the carrier injection and the brightness of the electroluminescent emission. LECs operated in this way exhibit fast emissive response and improved operating life. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
82.45.-h Electrochemistry and electrophoresis

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5

O. J. Glembocki, J. A. Tuchman, J. A. Dagata, K. K. Ko, S. W. Pang, and C. E. Stutz

Appl. Phys. Lett. 73, 114 (1998); http://dx.doi.org/10.1063/1.121785 (3 pages) | Cited 4 times

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Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it. © 1998 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
79.20.Fv Electron impact: Auger emission
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
78.20.-e Optical properties of bulk materials and thin films
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High field behavior of artificially engineered boundaries in melt-processed YBa2Cu3O7−δ

R. A. Doyle, A. D. Bradley, W. Lo, D. A. Cardwell, A. M. Campbell, Ph. Vanderbemden, and R. Cloots

Appl. Phys. Lett. 73, 117 (1998); http://dx.doi.org/10.1063/1.121786 (3 pages) | Cited 14 times

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Artificial bulk “zero-angle” boundaries parallel to the c axis have been engineered between large melt-processed YBa2Cu3O7−δ (YBCO) grains and observed to carry a transport supercurrent at fields up to at least 5 T at 77 K. The temperature and angular dependencies of the boundary resistance have exactly the same form as those of the grains, which is evidence that the grains are intimately coupled. The limiting mechanism for current transfer across these boundaries is, therefore, not a simple weak link or Josephson effect. This joining technique is extremely promising for production of macroscopic engineering artifacts. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Sv Critical currents
61.72.Mm Grain and twin boundaries

Photoinduced superconducting nanowires in GdBa2Cu3O6.5 films

R. S. Decca, H. D. Drew, B. Maiorov, J. Guimpel, and E. Osquiguil

Appl. Phys. Lett. 73, 120 (1998); http://dx.doi.org/10.1063/1.121787 (3 pages) | Cited 4 times

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We report the fabrication of high-Tc superconducting wires by photodoping a GdBa2Cu3O6.5 thin film. An optical near-field probe was used to locally excite carriers in the system at room temperature. Trapping of the photogenerated electrons define a confining potential for the conducting holes in the CuO planes. Spatially resolved reflectance measurements show the photogenerated nanowires to be ∼250 nm wide. Electron diffusion, before electron capture, is believed to be responsible for the observed width of the wires. © 1998 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
74.25.F- Transport properties
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Noncontact scanning probe microscope potentiometry of surface charge patches: Origin and interpretation of time-dependent signals

Samia Cunningham, Ivan A. Larkin, and John H. Davis

Appl. Phys. Lett. 73, 123 (1998); http://dx.doi.org/10.1063/1.121788 (3 pages) | Cited 31 times

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We have modeled the generation of a voltage signal in noncontact potentiometric scanning force microscopy for a locally enhanced potential due to an isolated patch of electrostatic charge on an insulating surface. Both the distribution of the charge and the dielectric nature of the insulator is taken into account. When the charge is assumed to disperse ohmically on the surface, a complex time-dependent decay in the signal occurs. The profile of the decay predicted by this assumption has a shape similar to that observed experimentally in submicron scale contact charging experiments. © 1998 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena

Spin-coated ferroelectric SrBi2Nb2O9 thin films

Koji Watanabe, Masahiro Tanaka, Eiko Sumitomo, Kenji Katori, Hajime Yagi, and J. F. Scott

Appl. Phys. Lett. 73, 126 (1998); http://dx.doi.org/10.1063/1.121705 (3 pages) | Cited 34 times

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The electrical and microstructural properties of pure strontium bismuth niobate (SBN) prepared by spin coating have been examined. Randomly ordered films have larger dielectric constants and remanent polarization values (maximum of Pr = 12.5 μC/cm2) than do c-axis oriented films. The heretofore unexplained dependences of Pr upon Sr content in SBN and SBT is shown to be entirely due to the sensitivity of grain orientation to Sr content in SBN. Vertical shifts (P axis) in the hysteresis curves are eliminated via ozone anneals. © 1998 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology

Dynamic nucleation of ice induced by a single stable cavitation bubble

K. Ohsaka and E. H. Trinh

Appl. Phys. Lett. 73, 129 (1998); http://dx.doi.org/10.1063/1.121706 (3 pages) | Cited 23 times

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Evidence is presented of the dynamic nucleation of ice induced by an isolated stable cavitation bubble in undercooled water. The evidence supports the notion of dynamic nucleation as a result of the freezing point shift due to high pressure pulses associated with a collapsing bubble. It is found that the cavitation bubble requires minimum undercooling, 5 K, to initiate nucleation on ice. This undercooling may be attributed to the temperature rise of the water due to the heat generated by compression of the bubble or the undercooling required for normal ice to nucleate on a high pressure phase. © 1998 American Institute of Physics.
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64.70.D- Solid-liquid transitions
62.50.-p High-pressure effects in solids and liquids
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