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6 Jul 1998

Volume 73, Issue 1, pp. 1-131

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Modification of InAs quantum dot structure by the growth of the capping layer

G. D. Lian, J. Yuan, L. M. Brown, G. H. Kim, and D. A. Ritchie

Appl. Phys. Lett. 73, 49 (1998); http://dx.doi.org/10.1063/1.121719 (3 pages) | Cited 55 times

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InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors

Zinc and phosphorus co-implantation in indium phosphide

Kin Man Yu and M. C. Ridgway

Appl. Phys. Lett. 73, 52 (1998); http://dx.doi.org/10.1063/1.121720 (3 pages) | Cited 4 times

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Electrical activation and dopant diffusion in Zn-implanted InP after rapid thermal annealing have been investigated. For an as-implanted Zn concentration of ∼ 4×1019 cm−3, only ∼7% of the implanted Zn atoms formed electrically active shallow acceptors following a 950 °C/5 s annealing cycle. The low activation was the result of rapid Zn out-diffusion—only ∼14% of the implanted dopant was retained after annealing. A significant enhancement in electrical activation and a reduction in Zn loss were achieved in Zn+P co-implanted samples which yielded a net hole concentration of ⩽ 6×1018 cm−3 and >50% Zn retention. The saturation of the free hole concentration in Zn+P co-implanted samples was attributed to the formation of Zn interstitial donors and Group-V-related donor-type native defects. For comparison, Zn+Al and Zn+Al+P co-implanted samples were also examined to distinguish the relative influences of implantation-induced disorder and nonstoichiometry on electrical activation and dopant diffusion. For the given implant conditions, we found that nonstoichiometry was the dominant influence. © 1998 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
61.66.Bi Elemental solids
61.66.Dk Alloys

Investigation of solid phase reaction of Ni with GaAs/Si(001)

T. C. Zhou, S. Jiang, W. P. Kirk, P. H. Hao, L. C. Wang, and P. J. Chen

Appl. Phys. Lett. 73, 55 (1998); http://dx.doi.org/10.1063/1.121721 (3 pages)

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A Ni/GaAs/Si(001) structure was used to investigate solid-phase reactions of Ni with GaAs and Si. Cross-sectional transmission electron microscopy and secondary-ion-mass-spectrometry depth profile data reveal that a Ni/GaAs/Si(001) structure converts to a crystalline GaAs/amorphous NiSi/Si(001) after low temperature (⩽350 °C) annealing. We demonstrate that the reaction is driven by the decomposition of a NixGaAs intermediate which is induced by the proximity of the Si substrate. Two models are suggested to explain the mechanism of a crystalline GaAs layer nucleated from NixGaAs on the amorphous NiSi layer. © 1998 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Gh Other heat and thermomechanical treatments

Imaging and identification of atomic planes of cleaved Bi2Sr2CaCu2O8+δ by high resolution scanning tunneling microscopy

S. H. Pan, E. W. Hudson, J. Ma, and J. C. Davis

Appl. Phys. Lett. 73, 58 (1998); http://dx.doi.org/10.1063/1.121722 (3 pages) | Cited 9 times

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Imaging of the surface of a cleaved Bi2Sr2CaCu2O8+δ (BSCCO) single crystal with a scanning tunneling microscope reveals a series of repeating terraces, whose separations are then used to identify the atomic planes which are exposed. On each of the exposed planes, the incommensurate modulation is also clearly resolved with atomic resolution. The measured separations between the terraces lead to the deduction that any atomic layer can be exposed by mechanical cleavage of BSCCO. We, therefore, suggest that the identity of atomic planes, and the direction of tunneling, should always be taken into consideration when interpreting tunneling spectra obtained on such cleaved BSCCO crystals. © 1998 American Institute of Physics.
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74.72.-h Cuprate superconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs coupled double quantum wells

T. W. Kim, M. Jung, D. U. Lee, Y. S. Lim, and J. Y. Lee

Appl. Phys. Lett. 73, 61 (1998); http://dx.doi.org/10.1063/1.121723 (3 pages) | Cited 1 time

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Transmission electron microscopy (TEM) and Raman scattering spectroscopy measurements were performed to investigate strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs modulation-doped coupled double quantum wells. The high-resolution TEM images showed that a 100-Å In0.8Ga0.2As deep quantum well and a 100-Å In0.53Ga0.47As shallow quantum well were separated by a 30-Å In0.25Ga0.75As embedded potential barrier. The selected-area electron-diffraction pattern obtained from TEM measurements on the InxGa1−xAs/InyAl1−yAs double quantum well showed that the InxGa1−xAs active layers were grown pseudomorphologically on the InP buffer layer. The values of the strain and the stress of the InxGa1−xAs layers were determined from the electron-diffraction pattern. Based on the TEM results, a possible crystal structure for the InxGa1−xAs/InyAl1−yAs coupled double quantum well is presented. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Fs III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy

F. Ganikhanov, K. C. Burr, and C. L. Tang

Appl. Phys. Lett. 73, 64 (1998); http://dx.doi.org/10.1063/1.121724 (3 pages) | Cited 11 times

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Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.30.Fs III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.38.-k Polarons and electron-phonon interactions

Ion implantation enhanced intermixing of Al-free 980 nm laser structures

P. G. Piva, S. Charbonneau, R. D. Goldberg, I. V. Mitchell, G. Hillier, and C. Miner

Appl. Phys. Lett. 73, 67 (1998); http://dx.doi.org/10.1063/1.121725 (3 pages) | Cited 2 times

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An investigation of the intermixing enhancement in an InGaAs/InGaAsP/InGaP partial laser structure following phosphorous implantation at 30, 80, and 7000 keV was carried out. We find that for the 30 and 80 keV implant energies, band gap shifts in excess of 80 meV could be imparted to a single embedded 8.5 nm InGaAs quantum well (QW) lying several thousand angstroms beyond the maximum ion range. As both the 30 and 80 keV implants kept the end of range damage spatially separate from optical mode region, the optical quality (inferred from photoluminescence intensity measurements) of the QW material was preserved to a greater extent than that resulting from the 7000 keV implants (where implant damage was directly created in the QW during ion bombardment). This result suggests that device structures containing InGaP cladding layers are well suited for monolithic integration as the masking of low energy ions with high lateral resolution can be achieved using routinely available masking techniques. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

Michel Abou-Khalil, Toshiaki Matsui, Zahia Bougrioua, Roman Maciejko, Ke Wu, K. Wu, R. Maciejko, and Z. Bougrioua

Appl. Phys. Lett. 73, 70 (1998); http://dx.doi.org/10.1063/1.121726 (3 pages) | Cited 1 time

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We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in the free and the confined states, depending on the initial carrier energy and on the component of the total wave vector parallel to the dislocations. We demonstrated that this new scattering process could affect the electron mean velocity by more than 30% from the ideal case treated commonly by the Monte Carlo simulators. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Dp General theory, scattering mechanisms

Wave form reconstruction of photoconductive switch using minimum phase retrieval algorithm

Woopoung Kim, Jongjoo Lee, Jaehoon Lee, Heeseok Lee, and Joungho Kim

Appl. Phys. Lett. 73, 73 (1998); http://dx.doi.org/10.1063/1.121727 (3 pages)

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An ideal delta function or a Gaussian function has been assumed for the photoconductive switching response of a photoconductive sampling experiment. In this letter, an effective wave form reconstruction method, called minimum phase retrieval algorithm, is presented to find the correct response function of the photoconductive sampling gate. In addition, the method is applied to the retrieval of a picosecond guided pulse wave form obtained from an on-wafer photoconductive sampling experiment. The reconstruction method should be used for the terahertz wave form detection measurement, where the pulse width is comparable to the switching time of the sampling gate. © 1998 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling

Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge

J. D. Scofield, P. Bletzinger, and B. N. Ganguly

Appl. Phys. Lett. 73, 76 (1998); http://dx.doi.org/10.1063/1.121728 (3 pages) | Cited 9 times

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Etch rates of up to 2200 Å/min have been achieved on hexagonal silicon carbide (SiC) using dilute mixtures of SF6:Ar in a standard 13.56 MHz asymmetric parallel plate discharge. Furthermore, these etch rates have been realized with excellent pattern anisotropy profiles of approximately 1 at pressures in the range of 100–350 mTorr and the SF6 fraction at or below 50%. An understanding of the mechanisms responsible for the high etch rates in this simple, dilute, gas mixture can be achieved by considering the electrical characteristics of the radio frequency plasma. The conditions defining maximum etch rates are associated with peak fluorine ion and/or radical production, and can be defined entirely in terms of the relative current–voltage phase shift leading to optimal plasma impedance conditions and ultimately to maximal power deposition into the plasma. In addition, this study shows that the pervasive practice of utilizing oxygenated gas chemistries for SiC etching is not required, as previously thought, for carbon saturation and removal in order to obtain high etch rates, good surface morphology, and reliable pattern definition on SiC.
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52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
81.05.Hd Other semiconductors

A method for Fermi energy measurements

A. Tsukernik, M. Slutzky, A. Palevski, S. Luryi, and H. Shtrikman

Appl. Phys. Lett. 73, 79 (1998); http://dx.doi.org/10.1063/1.121729 (3 pages)

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We describe a method of Fermi energy measurement, based on the analysis of thermionic emission and diffusion over a barrier with a built-in charge. The method can be applied to a variety of semiconductors and has been successfully tested by measuring the Fermi energy in GaAs. © 1998 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications

T. P. Ong, R. Fiordalice, R. Venkatraman, S. Garcia, A. Jain, T. Sparks, J. Farkas, M. Fernandes, M. Gall, D. Jawarani, J. Klein, E. Weitzman, H. Kawasaki, Wei Wu, R. Blumenthal, et al.

Appl. Phys. Lett. 73, 82 (1998); http://dx.doi.org/10.1063/1.121731 (3 pages)

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This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 μm ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/coherent (coh.) PVD Al/coh. PVD Ti and (2) warm PVD Al/CVD Al/coh. PVD Ti or Al/selective CVD Al. The integration of thin coh. PVD Al, deposited with a physical collimator or a variation of ionized metal plasma technique, was found to be the unique and simple solution in providing void-free via and interconnect structures, which have not been reported elsewhere. Excellent electrical and electromigration results have been obtained. © 1998 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
66.30.Qa Electromigration
81.05.Bx Metals, semimetals, and alloys

Electric field control of cathodoluminescence from phosphors excited at low electron energies

C. H. Seager

Appl. Phys. Lett. 73, 85 (1998); http://dx.doi.org/10.1063/1.121732 (3 pages) | Cited 8 times

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It is demonstrated that electric fields applied across phosphor layers strongly influence the cathodoluminescence emitted from these materials at low electron beam energies. The magnitude of these effects suggest that the primary mechanism may be alteration of the relative capture rates of electrons and holes at surface or near-surface defect sites associated with nonradiative energy losses. The sign of these effects in the two materials investigated suggests that the rate limiting step at low electric fields is the capture of electrons. Strong evidence for field-induced polarization and trapping of the beam-created electron-hole pair population is also presented. © 1998 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena

Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator

F. Rahman, B. L. Gallagher, M. Behet, and J. De Boeck

Appl. Phys. Lett. 73, 88 (1998); http://dx.doi.org/10.1063/1.121789 (3 pages) | Cited 3 times

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We report on a technique we have recently developed to fabricate very high quality gates and gated structures on InAs/AlxGa1−xSb quantum wells. The low thermal budget process leads to highly stable gates with extremely low leakage currents. Both electron and hole concentrations can be changed over a wide range by the application of modest gate voltages. We obtain a dn/dV value of 5×1011 cm2/V for electrons and 1.6×1012 cm2/V for holes at 1.2 K. © 1998 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

A deep level induced by gamma irradiation in Hg1−xCdxTe

Xinwen Hu, Jiaxiong Fang, Qin Wang, Jun Zhao, Huiqing Lu, Haimei Gong, Shengkun Zhang, and Fang Lu

Appl. Phys. Lett. 73, 91 (1998); http://dx.doi.org/10.1063/1.121790 (2 pages)

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Admittance spectroscopy and deep-level transient spectroscopy measurements have been performed on n+-on-p Hg1−xCdxTe (x = 0.595) planar photodiodes grown by improved zone melt method. After 1.0 Mrads gamma irradiation, a new trap center is observed at 0.19 eV above the valence band, while the well-known 0.15 eV trap level disappears. The trap densities for these two levels are almost the same. We attribute this phenomenon to the gamma irradiation, which produces a compound defect correlated with Hg vacancy. © 1998 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
61.72.J- Point defects and defect clusters
61.80.Ed γ-ray effects
71.55.Gs II-VI semiconductors

Direct evidence of impact excitation and spatial profiling of excited Er in light emitting Si diodes

Salvatore Coffa, Giorgia Franzò, Francesco Priolo, Andrea Pacelli, and Andrea Lacaita

Appl. Phys. Lett. 73, 93 (1998); http://dx.doi.org/10.1063/1.121791 (3 pages) | Cited 31 times

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We provide direct evidence that Er ions incorporated in the depletion layer of a p+–n+ Si junction are efficiently pumped through an impact excitation process with hot carriers. The carriers were accelerated by the electric field present in the depletion layer after being produced by either Zener breakdown of the junction at ∼5 V or by irradiating the diode with an argon laser. Measurements of the electroluminescence yield at 1.54 μm as a function of the reverse bias voltage (and for a constant current through the device) reveal that excitation of Er only occurs at voltages above 1 V, demonstrating that impact is the pumping mechanism. Moreover, we have found that Er ions are only excited within ∼15 nm from the edges of the depletion layer leaving a dark, ∼50 nm thick, region in the central part of the depletion region. Monte Carlo calculations confirmed that only close to the depletion layer edges the energy gained by the carriers in the electric field is high enough to impact excite Er. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
72.80.Cw Elemental semiconductors
72.20.Ht High-field and nonlinear effects
78.60.Fi Electroluminescence

Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

B. Legrand, B. Grandidier, J. P. Nys, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg

Appl. Phys. Lett. 73, 96 (1998); http://dx.doi.org/10.1063/1.121792 (3 pages) | Cited 56 times

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We present cross-sectional scanning tunneling microscopy images and scanning tunneling spectroscopy results of InAs quantum dots grown on GaAs. The samples contain 12 arrays of quantum dots. The analysis of the scanning tunneling microscope images reveals the self-alignment of the dots as well as the different dot interfaces with the under- and overgrown GaAs layers. We measure the strain distribution along the [001] direction in the (110) plane. The roughness of the dot interfaces along the [110] direction is also estimated and local spectroscopy of the dots evidences the electronic confinement (measured gap of 1.25 eV compared with 0.4 eV for bulk InAs). © 1998 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

M. P. Petkov, T. Marek, P. Asoka-Kumar, K. G. Lynn, R. S. Crandall, and A. H. Mahan

Appl. Phys. Lett. 73, 99 (1998); http://dx.doi.org/10.1063/1.121793 (3 pages) | Cited 7 times

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In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. © 1998 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
68.55.-a Thin film structure and morphology
78.70.Bj Positron annihilation
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

K. Katayama, H. Yao, F. Nakanishi, H. Doi, A. Saegusa, N. Okuda, T. Yamada, H. Matsubara, M. Irikura, T. Matsuoka, T. Takebe, S. Nishine, and T. Shirakawa

Appl. Phys. Lett. 73, 102 (1998); http://dx.doi.org/10.1063/1.121781 (3 pages) | Cited 25 times

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Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar+ laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film

Mingxiang Wang, Kunji Chen, Lei He, Wei Li, Jun Xu, and Xinfan Huang

Appl. Phys. Lett. 73, 105 (1998); http://dx.doi.org/10.1063/1.121782 (3 pages) | Cited 12 times

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A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus doped hydrogenated amorphous silicon (a-Si:H) film was annealed by cw Ar+ laser scanning. Different from conventionally prepared polycrystalline Si films, it was found that nanocrystalline Si (nc-Si) was formed in our laser annealed sample. Room-temperature green electroluminescence (EL) peaked at 530 nm was achieved from our nc-Si film. Photoluminescence (PL) from the same sample also shows the 530 nm green peak, in addition to the red peak located at 680 nm. The film had a rather high electrical conductivity of 10S/cm as well. The light emitting and highly conductive nc-Si film provides a new possibility to fabricate optoelectronic devices along with the well-developed laser annealing techniques of a-Si:H. © 1998 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.60.Fi Electroluminescence
78.66.Jg Amorphous semiconductors; glasses
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.61.Jc Amorphous semiconductors; glasses
72.80.Ng Disordered solids
72.80.Cw Elemental semiconductors

Low-cost all-polymer integrated circuits

C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw

Appl. Phys. Lett. 73, 108 (1998); http://dx.doi.org/10.1063/1.121783 (3 pages) | Cited 363 times

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A technology has been developed to make all polymer integrated circuits. It involves reproducible fabrication of field-effect transistors in which the semiconducting, conducting and insulating parts are all made of polymers. The fabrication on flexible substrates uses spin-coating of electrically active precursors and patternwise exposure of the deposited films. In the whole process stack integrity is maintained. Vertical interconnects are made mechanically. As a demonstrator functional 15-bit programmable code generators are fabricated. These circuits still operate when the foils are sharply bent. Due to the limited number of process steps the technology is potentially inexpensive. © 1998 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Complex admittance measurements of polymer light-emitting electrochemical cells: Ionic and electronic contributions

Gang Yu, Yong Cao, Chi Zhang, Yongfang Li, Jun Gao, and Alan J. Heeger

Appl. Phys. Lett. 73, 111 (1998); http://dx.doi.org/10.1063/1.121784 (3 pages) | Cited 34 times

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Measurements of the frequency dependence of the complex admittance are used to separate the ionic and electronic contributions in polymer light-emitting electrochemical cells (LECs). At zero bias, a large polarizability, attributed to salt molecules in the electrolyte, is observed at low frequencies. Ions are generated when the LEC is biased at voltages above the threshold for electrochemical redox doping. Because of the slow ionic response, a novel pulsed drive scheme is proposed: the mean value stabilizes the induced p-i-n junction, while the peak value controls the carrier injection and the brightness of the electroluminescent emission. LECs operated in this way exhibit fast emissive response and improved operating life. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
82.45.-h Electrochemistry and electrophoresis

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5

O. J. Glembocki, J. A. Tuchman, J. A. Dagata, K. K. Ko, S. W. Pang, and C. E. Stutz

Appl. Phys. Lett. 73, 114 (1998); http://dx.doi.org/10.1063/1.121785 (3 pages) | Cited 4 times

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Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it. © 1998 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
79.20.Fv Electron impact: Auger emission
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
78.20.-e Optical properties of bulk materials and thin films
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