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23 Nov 1998

Volume 73, Issue 21, pp. 3025-3166

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Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3

Kenji Kitamura, Yasunori Furukawa, Kazuo Niwa, Venkatraman Gopalan, and Terence E. Mitchell

Appl. Phys. Lett. 73, 3073 (1998); http://dx.doi.org/10.1063/1.122676 (3 pages) | Cited 110 times

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We grew LiTaO3 single crystals with a composition close to stoichiometry by using a double crucible Czochralski method. The switching field required for 180° ferroelectric domain reversal and the internal fields originating from nonstoichiometric point defects were compared for the stoichiometric and conventional commercially available crystals. The switching fields for the domain reversal in the stoichiometric crystal with a Curie temperature of 685 °C was 1.7 kV/mm. This is about one thirteenth of the switching field required for the conventional LiTaO3  crystals with a Curie temperature near 600 °C. The internal field in the stoichiometric crystal drastically decreased to 0.1 kV/mm. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
81.10.Fq Growth from melts; zone melting and refining
77.80.B- Phase transitions and Curie point
61.66.Bi Elemental solids
61.66.Dk Alloys

Amorphous silica nanowires: Intensive blue light emitters

D. P. Yu, Q. L. Hang, Y. Ding, H. Z. Zhang, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, and S. Q. Feng

Appl. Phys. Lett. 73, 3076 (1998); http://dx.doi.org/10.1063/1.122677 (3 pages) | Cited 223 times

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We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form of amorphous nanowires at a diameter of ∼15 nm and a length up to hundreds micrometers. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV. The intensity of the emission is two orders of magnitude higher than that of porous silicon. The SiONWs may have potential applications in high-resolution optical heads of scanning near-field optical microscope or nanointerconnections in future integrated optical devices. © 1998 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
78.55.Hx Other solid inorganic materials
61.43.Er Other amorphous solids
61.46.-w Structure of nanoscale materials
81.15.Fg Pulsed laser ablation deposition

Imaging of layer by layer growth processes during molecular beam epitaxy of GaAs on (111)A substrates by scanning electron microscopy

Hiroshi Yamaguchi and Yoshikazu Homma

Appl. Phys. Lett. 73, 3079 (1998); http://dx.doi.org/10.1063/1.122678 (3 pages) | Cited 5 times

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When we use a scanning electron microscope-molecular beam epitaxy system with a GaAs (111)A substrate that dramatically improves the flatness of the growing surface, it makes possible detailed observations of the near-equilibrium growth processes of island nucleation, coalescence, and step motion. These observations allow the quantitative analysis of the growth processes based on the standard model of crystal growth. As an example, the Ga adatom surface diffusion length is directly determined from the dependence of measured step velocity on the Ga arrival rate. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation

Fullerene and nanotube formation in cool terrestrial “dusty plasmas”

A. P. Burden and S. R. P. Silva

Appl. Phys. Lett. 73, 3082 (1998); http://dx.doi.org/10.1063/1.122679 (3 pages) | Cited 3 times

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The simultaneous generation of dust during the deposition of semiconducting thin films by radio frequency plasma enhanced chemical vapor deposition has so far been regarded as a troublesome by-product. However, we present results from recent microstructural investigations of carbonaceous dust particles from a methane precursor that demonstrate that the technique may be suited to generating fullerene molecules, nanotubes, and nanoparticles. Chemical analysis reveals that these particles contain few contaminant species, and we deduce that they nucleated in the plasma, with the carbon ions possibly self-arranging through the action of coulombic forces. © 1998 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
61.46.-w Structure of nanoscale materials
36.40.-c Atomic and molecular clusters
81.05.ub Fullerenes and related materials
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.-d Chemical analysis and related physical methods of analysis
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
82.70.-y Disperse systems; complex fluids

Synthesis of boron nitride nanotubes from carbon nanotubes by a substitution reaction

Weiqiang Han, Yoshio Bando, Keiji Kurashima, and Tadao Sato

Appl. Phys. Lett. 73, 3085 (1998); http://dx.doi.org/10.1063/1.122680 (3 pages) | Cited 161 times

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A method involving carbon nanotubes substituted reaction was developed for the synthesis of mass quantities of boron nitride nanotubes. Boron oxide vapor was reacted with nitrogen gas in the presence of carbon nanotubes to form boron nitride nanotubes, whose diameters and lengths are similar to those of the starting carbon nanotubes. It is proposed that carbon atoms of carbon nanotubes can be fully substituted by boron and nitrogen atoms through a general chemical reaction. The results suggest that the synthesis methodology developed here may also be extended to form nanotubes from other novel materials. © 1998 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.20.-n Methods of materials synthesis and materials processing

Injection of self-interstitials during sputter depth profiling of Si at room temperature

J. Cardenas, B. G. Svensson, W.-X. Ni, K. B. Joelsson, and G. V. Hansson

Appl. Phys. Lett. 73, 3088 (1998); http://dx.doi.org/10.1063/1.122681 (2 pages) | Cited 3 times

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Samples consisting of multi B delta layers and a single Sb delta layer, grown using molecular beam epitaxy, have been sputter depth profiled using O2+ ions with incidence energy of 8.2 or 3.2 keV. The leading and the trailing edge of the B distributions show an anomalous broadening induced by the sputtering, which apparently increases with ion energy. Similar feature is not observed for the Sb distribution. Incorporation of substitutional C to concentrations ∼ 1019 cm−3 suppresses the broadening feature almost completely. This anomalous broadening is interpreted as a consequence of injection of Si self-interstitials from the region damaged by the ion bombardment. These interstitials may migrate far beyond the mixing depth and interact with the B dopants, which yields a mixing of the B atoms before the distribution is within the “ordinary” mixing depth. © 1998 American Institute of Physics.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.80.Cw Elemental semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.S- Impurities in crystals

Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, and V. M. Phanse

Appl. Phys. Lett. 73, 3090 (1998); http://dx.doi.org/10.1063/1.122682 (3 pages) | Cited 28 times

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The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves. At the high growth rate used (∼33 nm/s), the films appear to be fully coalesced for growth periods as short as 1 s. A distinct surface and subsequent bulk transformation were observed, resulting in significantly smoother film surfaces and improved bulk morphology. The growth of thick (i.e., 300 μm) GaN films using HVPE offers a promising technique for the deposition of high-quality substrates for GaN homoepitaxy. © 1998 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Structural disorder induced in hydrogenated amorphous silicon by light soaking

J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin, and J. R. Abelson

Appl. Phys. Lett. 73, 3093 (1998); http://dx.doi.org/10.1063/1.122683 (3 pages) | Cited 39 times

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We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler–Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network. © 1998 American Institute of Physics.  
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61.82.Fk Semiconductors
61.43.Dq Amorphous semiconductors, metals, and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
72.80.Cw Elemental semiconductors
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
84.60.Jt Photoelectric conversion

Influence of the implantation parameters on the microstructure of carbon onions produced by carbon ion implantation

T. Cabioc’h, M. Jaouen, M. F. Denanot, and P. Bechet

Appl. Phys. Lett. 73, 3096 (1998); http://dx.doi.org/10.1063/1.122684 (3 pages) | Cited 14 times

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We study the influence of implantation parameters (temperature, implanted dose, and current density) on the microstructure of carbon onions produced by carbon ion implantation into silver substrates held at elevated temperature. Carbon onions are synthesized only for temperatures higher than 400 °C. An increase of the average diameter of the onions as well as a structure presenting less defects are observed when the temperature increases from 500 to 800 °C. For implantation doses varying from 5×1016 cm−2 to 5×1017 cm−2, we observe an increase of the average diameter, spherical onions with a very sharp distribution in size being obtained for doses ⩽ 1017 cm−2. We also vary the current density of the carbon ion beam from 2 to 45 μA cm−2, but this parameter does not induce any visible microstructural evolution of the onions. From the results presented here, one can now carry out studies related to the evolution of the physical properties of well defined size carbon onions having a controlled amount of defects. © 1998 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.20.-n Methods of materials synthesis and materials processing
81.05.ub Fullerenes and related materials
61.72.up Other materials

Phase transition voltage and response time of an aligned phase–change–guest–host mode of liquid-crystal film

Jin-Jei Wu, Tzu-Yang Lee, Shu-Hsia Chen, and Chen-Lung Kuo

Appl. Phys. Lett. 73, 3099 (1998); http://dx.doi.org/10.1063/1.122685 (3 pages)

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We have studied the electro-optical properties of the aligned phase-change–guest–host (PCGH) mode liquid-crystal display. The PCGH material is spread between two glass substrates. Each substrate has previously been coated with a homeotropic alignment layer and has been softly rubbed. Samples with various thickness-to-natural pitch ratio d/p0 are fabricated. It is found that, in some ranges of the d/p0 ratio, the response times and phase transition voltage are affected by the rubbing direction. © 1998 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
64.70.M- Transitions in liquid crystals
78.20.Jq Electro-optical effects
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
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