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23 Nov 1998

Volume 73, Issue 21, pp. 3025-3166

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Chirp-controlled ultrafast optical nonlinearities in semiconductors

J. Kunde, U. Siegner, S. Arlt, F. Morier-Genoud, and U. Keller

Appl. Phys. Lett. 73, 3025 (1998); http://dx.doi.org/10.1063/1.122660 (3 pages) | Cited 3 times

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We experimentally demonstrate that the differential transmission (DT) response of bulk semiconductors excited well above the band edge can be manipulated by chirping of the broadband excitation and readout pulses. In particular, the maximum transmission change in spectrally integrated DT experiments can be modified on the 20 fs time scale. Spectrally resolved DT studies explain this chirp dependence. Depending on the sign of the chirp, positive or negative DT contributions at low or high photon energies are probed with varying efficiency around zero time delay. These results demonstrate that chirp can become an additional degree of freedom for the optimization of device performance in ultrafast all-optical switching. © 1998 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.47.-p Spectroscopy of solid state dynamics

High-resolution periodically poled structure in diazo-dye-substituted polymer film based on direct electron-beam writing technique

Okihiro Sugihara, Yanlong Che, Naomichi Okamoto, Hisashi Fujimura, Chikara Egami, and Shinsuke Umegaki

Appl. Phys. Lett. 73, 3028 (1998); http://dx.doi.org/10.1063/1.122661 (3 pages) | Cited 2 times

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A periodically poled pattern in diazo-dye-substituted nonlinear optical polymer film is fabricated by direct electron-beam (EB) writing. It is found that the second-order nonlinearity of corona-poled polymer thin film is erased after EB irradiation. Moreover, the exposed region can be easily removed by conventional wet development. A high-resolution periodically poled structure (i.e., χ(2) grating) with a period of 0.60 μm is demonstrated based on the direct EB writing technique. © 1998 American Institute of Physics.  
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42.70.Jk Polymers and organics
77.22.Ej Polarization and depolarization
42.65.-k Nonlinear optics
42.79.Dj Gratings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.86.+b Optical workshop techniques

Direct time-domain observation of transition from strong to weak coupling in a semiconductor microcavity

Shudong Jiang, Susumu Machida, Yoshihiro Takiguchi, Yoshihisa Yamamoto, and Hui Cao

Appl. Phys. Lett. 73, 3031 (1998); http://dx.doi.org/10.1063/1.122662 (3 pages) | Cited 5 times

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We measured temporal evolution of the coherent emission from a semiconductor microcavity by a very sensitive ac balanced homodyne detection system. The experimental results can be well explained by the coupled exciton–photon model with varying exciton linewidth. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optically induced angular alignment of birefringent micro-objects by linear polarization

E. Higurashi, R. Sawada, and T. Ito

Appl. Phys. Lett. 73, 3034 (1998); http://dx.doi.org/10.1063/1.122663 (3 pages) | Cited 15 times

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Fluorinated polyimide micro-objects having large birefringence of Δn = −0.13 (refractive index n1 = 1.62, n2 = 1.49 for the wavelength λ=1.06 μm), which were fabricated by reactive ion etching and suspended in water (n = 1.33), were trapped and angularly aligned in a single Gaussian laser beam (λ=1.06 μm, power P>3 μW). The optically induced angular alignment effect is caused by the transfer of spin angular momentum due to the interaction between their birefringence and the linearly polarized light. © 1998 American Institute of Physics.
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78.66.Vs Fine-particle systems
78.20.Fm Birefringence
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
06.60.Sx Positioning and alignment; manipulating, remote handling

Evidence for self-mode-locking in p-Ge laser emission

A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, H. Weidner, W. Trimble, S. H. Withers, S. G. Pavlov, V. N. Shastin, and R. E. Peale

Appl. Phys. Lett. 73, 3037 (1998); http://dx.doi.org/10.1063/1.122664 (3 pages) | Cited 12 times

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Investigations of the dynamics of the far-infrared p-Ge laser emission reveal strong periodic soliton-like intensity spikes with less than 100 ps duration. We interpret these spikes as self-mode-locking of p-Ge laser modes. The effect becomes more pronounced when a GaAs/AlGaAs/InGaAs quantum well structure on a semi-insulating GaAs substrate is inserted into the laser cavity. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.45.+h Stimulated emission
42.65.Tg Optical solitons; nonlinear guided waves

The role of lead component in second-harmonic generation in lead silica by electron-beam irradiation

Mingxin Qiu, F. Pi, and G. Orriols

Appl. Phys. Lett. 73, 3040 (1998); http://dx.doi.org/10.1063/1.122665 (3 pages) | Cited 8 times

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It is found that the second-order nonlinearity induced in lead silica by electron-beam irradiation increases linearly with the lead percentage of the glass and a value of 4 pm/V has been estimated for ZF7 lead silica. The electrostatic field created under the glass surface increases with the lead percentage, which can be explained by the theory of stopping collisions of fast electrons. The layer depth is found proportional to the inverse square root of the lead percentage. The accumulative effect of electron irradiation for inducing the nonlinearity appears limited by the breakdown threshold in the charged layer. An optimum total electron charge per unit of scanned area of 0.29 C/m2 has been determined for SF2 glass. Nonlinearity layer depths of 1.9–4.1 μm have been estimated by chemical etching for different lead silica and electron voltages, and the coefficients of the Bohr–Bethe penetration formula have been determined for SF2 glass. © 1998 American Institute of Physics.
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42.70.Ce Glasses, quartz
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.65.Cf Surface cleaning, etching, patterning
61.80.Fe Electron and positron radiation effects

Measurement of far-infrared intersubband spontaneous emission from optically pumped quantum wells

I. Lyubomirsky, Q. Hu, and M. R. Melloch

Appl. Phys. Lett. 73, 3043 (1998); http://dx.doi.org/10.1063/1.122666 (3 pages) | Cited 7 times

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We present the results of an experiment to measure far-infrared intersubband spontaneous emission from optically pumped quantum wells. A four-level laser design scheme was implemented using a coupled triple quantum well structure for optical pumping from E1 to E4 with a CO2 laser. The phonon scattering rates were designed to optimize the far-infrared emission efficiency and population inversion between E3−E2 ∼ 30 meV. The spontaneous emission spectrum was successfully resolved to reveal an emission peak at 30.8 meV with a linewidth of 7 meV. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Intense visible light emission from Sr3Al2O6:Eu,Dy

Morito Akiyama, Chao-nan Xu, Kazuhiro Nonaka, and Tadahiko Watanabe

Appl. Phys. Lett. 73, 3046 (1998); http://dx.doi.org/10.1063/1.122667 (3 pages) | Cited 39 times

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The triboluminescence intensity from stress-activated Sr3Al2O6:Eu,Dy (SAO-ED) was so strong that we could see it with the naked eye in the atmosphere. The luminescence integrated intensity was about five hundred times as high as that of crystal sugar. We think that the light emission is due to the movement of dislocations and the 4f7–4f65d transition in the doped Eu2+ ions from the analysis of the emitted light. Furthermore, we have discovered the new phenomenon that the luminescence intensity of the SAO-ED is recovered by the irradiation of ultraviolet light. © 1998 American Institute of Physics.
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78.60.Mq Sonoluminescence, triboluminescence
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Coherent, broadband midinfrared terahertz beam sensors

P. Y. Han and X.-C. Zhang

Appl. Phys. Lett. 73, 3049 (1998); http://dx.doi.org/10.1063/1.122668 (3 pages) | Cited 39 times

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With proper selection of the electro-optic terahertz (THz) wave emitter and sensor crystals, we demonstrate the coherent measurement of free-space broadband radiation spanning 100 GHz to over 30 THz. This effort supports the feasibility of midinfrared time-domain spectroscopy. © 1998 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Patterned birefringence by photoinduced depoling in electro-optic polymers and its application to a waveguide polarization splitter

Sang-Shin Lee, Sean Garner, Antao Chen, Vadim Chuyanov, William H. Steier, Lan Guo, Larry R. Dalton, and Sang-Yung Shin

Appl. Phys. Lett. 73, 3052 (1998); http://dx.doi.org/10.1063/1.122669 (3 pages) | Cited 2 times

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Photobleaching by ultraviolet light at 410 nm wavelength of selected electro-optic poled polymers leads to birefringence which can be patterned on a submicron scale. Measurements at 1310 nm of the effect in a azo dye attached to poly(methylmethacrylate) is presented along with data showing the effect is not present is hardened cross linked polymer hosts. An integrated optic polarization splitter using the patterned birefringence has crosstalk at the transverse electric and transverse magnetic outputs of −23 and −27 dB, respectively, and excess loss 0.2 and 0.3 dB at 1310 nm. © 1998 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
42.79.Wc Optical coatings
78.66.Qn Polymers; organic compounds
42.25.Lc Birefringence
78.20.Fm Birefringence
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.25.Ja Polarization
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.79.Fm Reflectors, beam splitters, and deflectors
78.20.Jq Electro-optical effects

Blue-green organic light-emitting diodes based on fluorene-oxadiazole compounds

Homer Antoniadis, Mike Inbasekaran, and Edmund P. Woo

Appl. Phys. Lett. 73, 3055 (1998); http://dx.doi.org/10.1063/1.122670 (3 pages) | Cited 39 times

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We explore the electroluminescent properties of multilayer vapor-deposited organic light-emitting diodes based on a novel set of blue-green emitting-fluorene-oxadiazole compounds. The compounds were used both for the transport of electrons and for the emission of light; in all cases, arylamines were used for the transport of holes. Reducing the ionization potential of the fluorene-oxadiazole compound suppressed the exciplex formation between the hole-transporting layer (HTL) and the electron transport layer (ETL) and increased the corresponding photometric efficiency from 0.6 to 8.7 cd/A. High power efficiencies of 4.5 lm/W at a luminance of 200 cd/m2 were also achieved at low operating voltages. However, the device lifetime was very limited which was attributed mainly to the exciplex formation in the HTL/ETL interface and the instability of the oxadiazole moiety in the excited state. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices

Luminescence behavior of pulsed laser deposited Eu:Y2O3 thin film phosphors on sapphire substrates

K. G. Cho, D. Kumar, P. H. Holloway, and Rajiv K. Singh

Appl. Phys. Lett. 73, 3058 (1998); http://dx.doi.org/10.1063/1.122671 (3 pages) | Cited 71 times

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Europium-doped yttrium oxide (Eu:Y2O3) luminescent thin films have been grown in situ on single crystal (0001) sapphire substrates using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence (PL) and cathodoluminescence (CL) brightness data obtained from the Eu:Y2O3 films grown under optimized conditions have indicated that sapphire is a promising substrate for the growth of high quality Eu:Y2O3 thin film red phosphor. The success in the fabrication of Eu:Y2O3 films with high PL and CL brightness is attributed to favorable optical properties (low absorption of and low refractive index for red light) of the substrate material and improved growth of grains with unidirectional orientation on (0001) sapphire substrates. © 1998 American Institute of Physics.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators
81.15.Fg Pulsed laser ablation deposition
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
68.55.-a Thin film structure and morphology

Room-temperature 1.54 μm electroluminescence from erbium-doped Si/SiGe waveguides

E. Neufeld, A. Sticht, A. Luigart, K. Brunner, and G. Abstreiter

Appl. Phys. Lett. 73, 3061 (1998); http://dx.doi.org/10.1063/1.122672 (3 pages) | Cited 7 times

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In this letter, we demonstrate room-temperature electroluminescence from erbium ions in SiGe waveguide structures. Molecular beam epitaxy was employed to deposit SiGe layers doped with erbium and oxygen on (100)Si. Samples were processed as mesa waveguides and contacted to allow electrical pumping of the erbium ions. The luminescence was collected from the waveguides by a confocal microscope revealing emission from the end facet with a narrow spatial distribution. © 1998 American Institute of Physics.
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78.60.Fi Electroluminescence
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices
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