APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 73 / Issue 23 / SEMICONDUCTORS

Appl. Phys. Lett. 73, 3438 (1998); http://dx.doi.org/10.1063/1.122790 (3 pages)

Correlation between the surface defect distribution and minority carrier transport properties in GaN

P. M. Bridger, Z. Z. Bandić, E. C. Piquette, and T. C. McGill

Thomas J. Watson, Sr. Laboratory of Applied Physics, 128-95, California Institute of Technology, Pasadena, California 91125

(Received 20 May 1998; accepted 6 October 1998)

We have studied linear dislocations and surface defects in p- and n-type metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy grown GaN films on sapphire with atomic force microscopy. The surface pits due to threading dislocations were found not to be distributed randomly but on the boundaries of growth columns. The dislocations are thought to be electrically active since the average distance between them (average column size) is comparable to minority carrier diffusion lengths as measured by electron beam induced current experiments on Schottky diodes fabricated with the same material. Diffusion lengths found for holes and electrons are on the order of Lp = 0.28 μm and Le = 0.16 μm which corresponded to the sizes of regions free from surface dislocations in both cases and can be described by a simple model of recombination on grain boundaries. © 1998 American Institute of Physics.

© 1998 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, wide band gap semiconductors, minority carriers, carrier lifetime, dislocation structure, semiconductor epitaxial layers, atomic force microscopy, surface structure, surface recombination

PACS

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 73.61.Ey

    III-V semiconductors

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 61.72.Lk

    Linear defects: dislocations, disclinations

  • 73.25.+i

    Surface conductivity and carrier phenomena

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.122790

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 1417 (1997)APPLAB000070000011001417000001.

    J. M. Van Hove, R. Hickman, J. J. Klaassen, P. P. Chow, and P. P. Ruden, Appl. Phys. Lett. 70, 2282 (1997)APPLAB000070000017002282000001.

    S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995)APPLAB000066000010001249000001.

    L. Sugiura, J. Appl. Phys. 81, 1633 (1997)JAPIAU000081000004001633000001.

    S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997)APPLAB000070000004000420000001.

    Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, Appl. Phys. Lett. 72, 3166 (1998)APPLAB000072000024003166000001.

    P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamurti, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 72, 2247 (1998)APPLAB000072000018002247000001.

    L. T. Romano and T. H. Myers, Appl. Phys. Lett. 71, 3486 (1997)APPLAB000071000024003486000001.


For access to citing articles, you need to log in.



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Correlation between the surface defect distribution and minority carrier transport properties in GaN
  2. Single- and multi-wall carbon nanotube field-effect transistors
  3. Two-dimensional electron gas formed in a back-gated undoped heterostructure
  4. Persistent photoconductivity in n-type GaN
  5. Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga0.5In0.5P by molecular beam epitaxy
Go to AIP Home
Copyright © American Institute of Physics
close