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Applied Physics Letters / Volume 73 / Issue 23 / SEMICONDUCTORS

Appl. Phys. Lett. 73, 3441 (1998); http://dx.doi.org/10.1063/1.122791 (3 pages)

Examination of deuterium transport through device structures

P. J. Chen and R. M. Wallace

Texas Instruments, Inc., Dallas, Texas 75243

(Received 7 July 1998; accepted 2 October 1998)

We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on 0.18 μm “metal” oxide silicon test structures subjected to deuterium anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures. © 1998 American Institute of Physics.

© 1998 American Institute of Physics

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KEYWORDS and PACS

Keywords

deuterium, surface diffusion, MIS structures, secondary ion mass spectra, passivation

PACS

  • 68.35.Fx

    Diffusion; interface formation

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 79.20.Rf

    Atomic, molecular, and ion beam impact and interactions with surfaces

  • 81.65.Rv

    Passivation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.122791

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    H. C. Mogul, L. Cong, R. M. Wallace, P. J. Chen, T. A. Rost, K. Harvey, and N. A. Dumin, Appl. Phys. Lett. 72, 1721 (1998)APPLAB000072000014001721000001.

    K. L. Brower and S. M. Myers, Appl. Phys. Lett. 57, 162 (1990)APPLAB000057000002000162000001.

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    F. Priolo, G. Mannino, M. Micciché, V. Privitera, E. Napolitani, and A. Carner, Appl. Phys. Lett. 72, 3011 (1998)APPLAB000072000023003011000001.

    K. L. Brower, Appl. Phys. Lett. 53, 508 (1998)APPLAB000053000006000508000001;, Phys. Rev. B 38, 9657 (1988).


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