APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

7 Dec 1998

Volume 73, Issue 23, pp. 3321-3467

Return to All Sections
back to top
RSS Feeds

Ultrafast phase dynamics of coherent carriers in GaAs

X. Y. Yu, Q. Luo, W. L. Li, Q. Li, Z. R. Qiu, and J. Y. Zhou

Appl. Phys. Lett. 73, 3321 (1998); http://dx.doi.org/10.1063/1.122708 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ultrafast phase dynamics of free-induction decay for carriers in bulk GaAs is studied with differential-phase spectroscopy. The instantaneous phase shifts of the free-induction decay with respect to the excitation pulses are extracted from simultaneously recorded laser pulse autocorrelation and free-induction decay in GaAs. Ultrafast phase dynamics during and immediately after the femtosecond pulse excitation are numerically evaluated with optical Bloch equations using pump pulse and semiconductor exciton parameters as input. Good agreement of the theory with experiment is obtained. © 1998 American Institute of Physics.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Self-consistent Green’s function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers

B. Klein, L. F. Register, K. Hess, D.G. Deppe, and Q. Deng

Appl. Phys. Lett. 73, 3324 (1998); http://dx.doi.org/10.1063/1.122710 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dielectrically apertured vertical-cavity surface-emitting lasers are modeled using a Green’s-function-based optical solver that allows calculation of the full-vector lasing modes and their threshold conditions. The laser is separated into subsystems consisting of a planar microcavity, a dielectric aperture, and an active gain medium. The exact Green’s function solution for a radiating point source in the planar microcavity is then used to construct an eigenvalue equation for the self-consistent lasing modes. The derived eigenvalue equation is numerically solved to evaluate threshold dependence on aperture and cavity design. Results show a low threshold for thin oxide apertures placed at field antinodes, as well as for tapered oxides with thin tapers placed at field nodes. © 1998 American Institute of Physics.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
02.10.Ud Linear algebra
02.10.Xm Multilinear algebra
02.30.Sa Functional analysis

Efficient contour generation and tracking of a moving object with a rhodium-doped BaTiO3 crystal working in the near infrared

Pierre Mathey, Pierre Jullien, and Daniel Rytz

Appl. Phys. Lett. 73, 3327 (1998); http://dx.doi.org/10.1063/1.122709 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The depletion efficiencies and their corresponding constant times are investigated in four differently doped barium titanate crystals at the near-infrared wavelength of 854 nm. It is shown that the rhodium-doped crystal offers the best results. Satisfactory motion tracking and edge enhancement are demonstrated with an optical photorefractive novelty filter. © 1998 American Institute of Physics.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Pw Imaging detectors and sensors
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
78.20.-e Optical properties of bulk materials and thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Optical engineering with Fibonacci dielectric multilayers

Enrique Maciá

Appl. Phys. Lett. 73, 3330 (1998); http://dx.doi.org/10.1063/1.122759 (3 pages) | Cited 59 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study the resonant transmission of light through Fibonacci dielectric multilayers (FDM). Making use of a transfer matrix renormalization technique [E. Maciá and F. Domínguez-Adame, Phys. Rev. Lett. 76, 2957 (1996)] we obtain closed analytical expressions for the transmission coefficient under arbitrary incidence angle conditions. We analyze the relationship between the resonant wavelengths and the quasiperiodic structure of the substrate, suggesting the potential use of arrays containing FDMs of different sizes in the design of optical microcavities. © 1998 American Institute of Physics.
Show PACS
78.66.-w Optical properties of specific thin films
02.20.-a Group theory
42.79.Wc Optical coatings

An application of the apertureless scanning near-field optical microscopy: Imaging a GaAlAs laser diode in operation

R. Bachelot, G. Wurtz, and P. Royer

Appl. Phys. Lett. 73, 3333 (1998); http://dx.doi.org/10.1063/1.122760 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
The imaging of a commercial GaAlAs semiconductor laser emitting at 0.78 μm has been performed by apertureless scanning near-field optical microscopy using a sharp metallic tip. This tip was used as an optical and force probe simultaneously. In stimulated emission, we observed the single transverse laser mode whose dimensions are in good agreement with theoretical results. In spontaneous emission, an optical contrast linked to the known laser layers structure was observed. © 1998 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
07.79.Fc Near-field scanning optical microscopes

Direct fabrication of polyimide waveguide grating by synchrotron radiation

Junya Kobayashi, Tohru Maruno, Tetsuyoshi Ishii, Toshiaki Tamamura, and Toshiyuki Horiuchi

Appl. Phys. Lett. 73, 3336 (1998); http://dx.doi.org/10.1063/1.122761 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Synchrotron radiation induces a change in the refractive index of a fluorinated polyimide by an order of 10−2, which is about ten times larger than the change it induces in silica glass irradiated by ultraviolet light, presumably due to fluorine detachment and subsequent volume compaction. We have fabricated a 0.51-μm-period grating structure in an embedded waveguide through a 15-μm-thick overcladding by using an x-ray mask with a spatially modulated pattern. The grating is fabricated at a dose of 160 A s and shows a reflectivity of 60% and a full width at half maximum as narrow as 0.25 nm at around a wavelength of 1.55 μm. © 1998 American Institute of Physics.
Show PACS
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Dj Gratings
42.65.Wi Nonlinear waveguides
42.82.Et Waveguides, couplers, and arrays

A phase jump phenomenon in interferometry

Weidong Zhou and Lilong Cai

Appl. Phys. Lett. 73, 3339 (1998); http://dx.doi.org/10.1063/1.122762 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A phase jump phenomenon in interferometers is reported. When the intensity of one arm of an interferometer changes from greater to less (or less to greater) than that of another, a phase jump of 180° will take place if the phase difference between two beams is fixed as π. We name this phenomenon “phase jump.” Both theoretical analysis and experimental verification are conducted and the results are presented here. The slope of the phase jump is infinite and highly stable. Therefore, this phase jump phenomenon can be used as optical comparators, reference mark, position indexes, pulse generators, edge detection, etc. © 1998 American Institute of Physics.
Show PACS
07.60.Ly Interferometers

Measurement of temperature gradient in diode-laser-pumped high-power solid-state laser by low-coherence reflectometry

S. L. Huang, W. L. Wu, and P. L. Huang

Appl. Phys. Lett. 73, 3342 (1998); http://dx.doi.org/10.1063/1.122763 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A noninvasive technique was developed to measure the temperature distribution in laser gain medium. Both axial and radial temperature distributions of a diode-laser-pumped and intracavity frequency-doubled high-power Nd:YVO4/KTP laser were characterized using a high dynamic range, low-coherence reflectometer. This measurement is important to the design of high-power solid-state lasers both in terms of mode matching and laser-rod doping selection. © 1998 American Institute of Physics.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.70.Hj Laser materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electroabsorption spectroscopy study of an azopolymer film fabricated by electrostatic adsorption

Ke Yang, Srinivasan Balasubramanian, Xiaogong Wang, Jayant Kumar, and Sukant Tripathy

Appl. Phys. Lett. 73, 3345 (1998); http://dx.doi.org/10.1063/1.122764 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electroabsorption spectroscopy measurements are reported on a multilayer thin film of a prototypical azopolymer. The sample was prepared by sequentially dipping the substrate into aqueous solutions containing the polycation poly(diallyl dimethyl ammonium chloride) and the polyanion CH-1A-NS, an epoxy based polymer with azobenzene chromophore. The measured ratio of χ3333(3) to χ1133(3) for the electrostatically assembled film is 4, which indicates that the chromophores in this film are oriented preferentially perpendicular to the film plane instead of an isotropic distribution in three-dimensional space. For comparison, a spin coated film of CH-1A-NS was studied by the same method. The ratio of χ3333(3) to χ1133(3) for the spin coated film is found to be 1.9, indicating that the same chromophores in the spin coated film are oriented preferentially in the film plane. These results imply that the process of electrostatic layer-by-layer adsorption leads to a preferred orientation of the chromophores, perpendicular to the film plane, while the same chromophores in the spin coated film lie predominately in the plane of the substrate. © 1998 American Institute of Physics.
Show PACS
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
78.40.Me Organic compounds and polymers
78.66.Qn Polymers; organic compounds

Effect of well number on organic multiple-quantum-well electroluminescent device characteristics

Jingsong Huang, Kaixia Yang, Zhiyuan Xie, Baijun Chen, Hongjin Jiang, and Shiyong Liu

Appl. Phys. Lett. 73, 3348 (1998); http://dx.doi.org/10.1063/1.122765 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A doping technique for fabricating organic multiple-quantum-well electroluminescent (EL) devices is demonstrated. This device consists of N,N′-Bis(3-methyphenyl)-N,N′-diphenylbenzidine used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene as a potential well and an emitter. Our experimental results suggest that the double-quantum-well EL devices show the optimum emission characteristics. The efficiency and the luminance of the device achieve 15.7 lm/W and 7500 cd/m2, respectively. © 1998 American Institute of Physics.  
Show PACS
73.61.Ph Polymers; organic compounds
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe

Appl. Phys. Lett. 73, 3351 (1998); http://dx.doi.org/10.1063/1.122766 (3 pages) | Cited 45 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Data are presented on the lasing transitions from InGaAs/GaAs quantum dots that exhibit four well-resolved energy transitions, with the electronic state density of a two-dimensional harmonic oscillator. Lasing has been obtained on the second and third transitions, depending on the cavity (gain) length, with the longest lasing wavelength measured to be 1.19 μm. The temperature dependence of threshold is studied and regions of nearly temperature-independent threshold are found. Interesting aspects of the unique electronic state density for lasers are discussed. © 1998 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical fiber temperature sensor using a gain-switched Fabry–Perot semiconductor laser self-seeded from a linearly chirped fiber Bragg grating

Shenping Li and K. T. Chan

Appl. Phys. Lett. 73, 3354 (1998); http://dx.doi.org/10.1063/1.122767 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a highly sensitive fiber temperature sensor based on a gain-switched Fabry–Perot semiconductor laser self-seeded from a linearly chirped fiber Bragg grating. A temperature resolution of better than 0.1 °C was demonstrated. This sensor not only has the advantage of robustness against fluctuating light levels, but also obviates the need for fine wavelength discrimination. © 1998 American Institute of Physics.
Show PACS
07.20.Dt Thermometers
42.81.Pa Sensors, gyros
42.55.Px Semiconductor lasers; laser diodes
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close