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21 Dec 1998

Volume 73, Issue 25, pp. 3629-3786

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A fast-response and short-wavelength nonlinear optical chromophore for a photorefractive composite

Zhijian Chen, Feng Wang, Cong Yao, Zhiwen Huang, Qihuang Gong, Yiwang Chen, and Huiying Chen

Appl. Phys. Lett. 73, 3629 (1998); http://dx.doi.org/10.1063/1.122844 (3 pages) | Cited 3 times

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A nonlinear optical molecule, β,β-diacetyl-4-methoxylstyrene (DAMST), was synthesized and used as the electro-optic chromophore in a photorefractive polymeric composite. Its absorption peak lies at 320 nm and shows no absorption at wavelengths longer than 400 nm. In a 100 μm thickness film of DAMST:poly(N-vinylcarbazole):2,4,7-trinitro-9-fluorenone with a weight ratio of 59:40:1, two-beam coupling gain was measured as high as 32 cm−1 at a wavelength of 543 nm. A response time as short as 17 ms was estimated at an applied electric field of 84 V/μm with a writing beam intensity of 1 W/cm2. © 1998 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Mp Nonlinear optical crystals
78.20.Jq Electro-optical effects

Broadband optical limiting with multiwalled carbon nanotubes

X. Sun, R. Q. Yu, G. Q. Xu, T. S. A. Hor, and W. Ji

Appl. Phys. Lett. 73, 3632 (1998); http://dx.doi.org/10.1063/1.122845 (3 pages) | Cited 83 times

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Optical limiting effects in multiwalled carbon nanotubes have been observed in the visible and infrared spectral regions with nanosecond laser pulses. The multiwalled carbon nanotubes investigated include those suspended in distilled water and embedded in polymethyl methacrylate films. Among all the samples measured, the limiting performance of the carbon nanotube suspension is the best with the limiting threshold determined to be ∼ 1, 5, and 13 J/cm2 at 532, 700, and 1064 nm, respectively. The possible mechanism for the observed effects is discussed. © 1998 American Institute of Physics.
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42.70.Gi Light-sensitive materials
78.30.Na Fullerenes and related materials
78.40.Ri Fullerenes and related materials
42.79.-e Optical elements, devices, and systems
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Modulation of second harmonic generation in photochromic materials by the application of electric fields and low intensity light

M. C. J. Large, F. Kajzar, and P. Raimond

Appl. Phys. Lett. 73, 3635 (1998); http://dx.doi.org/10.1063/1.122846 (3 pages) | Cited 5 times

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The simultaneous application of low intensity optical and static electric fields to photoisomerizable electro-optic materials is shown to allow manipulation of the refractive index. A dc electric field was applied to the sample by means of a corona poling mechanism, which was illuminated within the absorption band using a low power laser. The application of the optical field caused a reduction in polar order in the material, with a corresponding change in the refractive index. The change of polar order was monitored by optical second harmonic generation. For typical experimental values, the variation in refractive index was calculated to be about 1%, which is sufficient to change waveguiding conditions. Electroded samples also showed the effect. © 1998 American Institute of Physics.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Jq Electro-optical effects
82.30.Qt Isomerization and rearrangement
82.50.-m Photochemistry

Two-photon transitions between bound-to-continuum states in AlGaAs/GaAs multiple quantum well

Jin U. Kang, Jacob B. Khurgin, C. C. Yang, H. H. Lin, and George I. Stegeman

Appl. Phys. Lett. 73, 3638 (1998); http://dx.doi.org/10.1063/1.122847 (3 pages) | Cited 4 times

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We have experimentally observed room-temperature exciton resonances resulting from interband two-photon transitions between bound-to-continuum states. The excitons exhibit reduced binding energy and broadened resonances compared to that of excitons resulting from two-photon transitions between bound states. This trend is consistent with our theoretical prediction. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors

J-aggregate electroluminescence in dye doped polymer layers

E. I. Mal’tsev, D. A. Lypenko, B. I. Shapiro, M. A. Brusentseva, V. I. Berendyaev, B. V. Kotov, and A. V. Vannikov

Appl. Phys. Lett. 73, 3641 (1998); http://dx.doi.org/10.1063/1.122848 (3 pages) | Cited 13 times

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The electroluminescence (EL) of a dye nanocrystalline phase was revealed in single layer light-emitting diodes based on polymers doped with cyanine dye molecules. Observation of light emission in the visible range depended on the redox potentials of the dyes used. The 9,10-dithioanthracene-containing polyimides exhibiting efficient electron-hole transport appeared to be appropriate media for the generation of J-aggregate EL. © 1998 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
61.41.+e Polymers, elastomers, and plastics

Single-sided alignment of electroclinic liquid crystals for active matrix displays

A. Hermanns, C. M. Wilson, J. Y. Patel, J. W. Naciri, J. R. Lindle, and B. R. Ratna

Appl. Phys. Lett. 73, 3644 (1998); http://dx.doi.org/10.1063/1.122849 (3 pages) | Cited 3 times

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Single-sided alignment, in which only one of the two display substrates bears an alignment layer, stands to significantly simplify the manufacture and improve the yield and performance of active matrix displays. Using polybutylene terephthalate alignment layers, we show that single-sided alignment is feasible for electroclinic liquid crystals and can result in faster switching and larger tilt angle. Most importantly, single-sided alignment gave high contrast in excess of 170:1. © 1998 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Effect of hydrogenation on room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide

Jung H. Shin, Se-young Seo, and Seok-Ju Lee

Appl. Phys. Lett. 73, 3647 (1998); http://dx.doi.org/10.1063/1.122850 (3 pages) | Cited 9 times

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The effect of hydrogenation on the room-temperature 1.54 μm Er3+ photoluminescent properties of erbium-doped silicon-rich silicon oxide thin films is investigated. Two samples with 7 and 1 at. % excess silicon and 0.4 at. % erbium were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of SiH4 and O2 with cosputtering of erbium and subsequent rapid thermal anneal at 900 °C. Hydrogenation by exposure to D plasma doubles the 1.54 μm Er3+ luminescence intensity from the high excess silicon content sample but halves that from the low excess silicon content sample. The lifetimes and excitation power dependence of Er+ luminescence show that hydrogenation primarily affects the active erbium fraction, increasing it in case of the high excess silicon sample but decreasing it in case of the low excess silicon content sample. With proper treatments, Er3+ luminescence lifetime of over 7 ms is obtained. © 1998 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
61.72.Cc Kinetics of defect formation and annealing

Low temperature periodic electrical poling of flux-grown KTiOPO4 and isomorphic crystals

G. Rosenman, A. Skliar, D. Eger, M. Oron, and M. Katz

Appl. Phys. Lett. 73, 3650 (1998); http://dx.doi.org/10.1063/1.122851 (3 pages) | Cited 43 times

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Studies of dielectric spectroscopy, dc conductivity, and polarization switching allowed the observation of phase transition from the superionic to the insulating state in flux-grown KTiOPO4 (KTP) crystals at low temperature where the high mobility of potassium ions is suppressed. A low temperature method of fabrication of engineered periodic domain structures in superionic KTP and isomorphic crystals is proposed. It enabled us to tailor homogeneous domain gratings with various periods in the range 4–39 μm for quasiphase-matched nonlinear optical converters in KTP plates over whole area of 30×30 mm2. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
72.60.+g Mixed conductivity and conductivity transitions
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
42.79.Dj Gratings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.70.Mp Nonlinear optical crystals
66.30.H- Self-diffusion and ionic conduction in nonmetals

Highly reflective GaN/Al0.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition

T. Someya and Y. Arakawa

Appl. Phys. Lett. 73, 3653 (1998); http://dx.doi.org/10.1063/1.122852 (3 pages) | Cited 53 times

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Quarter-wave reflectors consisting of sets of GaN and Al0.34Ga0.66N layers have been grown on sapphire substrates by atmospheric-pressure metal organic chemical vapor deposition. A periodic structure with flat interfaces was observed by high-resolution scanning electron microscopy. X-ray diffraction measurements were performed to characterize the structures, from which the Al content x in the AlxGa1−xN layers was determined to be 0.34. No cracks could be seen on the surface of the reflectors by optical microscopy. The measured peak reflectivity at 390 nm increases with the number of pairs and reaches as high as 96±2% in the 35-pair reflector. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.79.Wc Optical coatings

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, and R. P. H. Chang

Appl. Phys. Lett. 73, 3656 (1998); http://dx.doi.org/10.1063/1.122853 (3 pages) | Cited 212 times

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A semiconductor laser whose cavities are “self-formed” due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Blue-light laser source by sum-frequency mixing in Nd:YAl3(BO3)4

D. Jaque, J. Capmany, F. Molero, and J. García Solé

Appl. Phys. Lett. 73, 3659 (1998); http://dx.doi.org/10.1063/1.122854 (3 pages) | Cited 34 times

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Sum-frequency mixing in neodymium-doped YAl3(BO3)4 of its fundamental laser line at 1062 nm and the pump light from a tunable Ti:sapphire laser has been used to generate blue radiation from 435 to 465 nm in an end-pumped configuration. In nonoptimal preliminary experiments 22 μW at 458 nm was obtained out of 200 mW absorbed power at 807 nm. Nd:YAB, therefore, emerges as a promising laser material for diode-pumped solid-state lasers in the blue spectral region. © 1998 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals
42.60.Pk Continuous operation
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