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20 Jul 1998

Volume 73, Issue 3, pp. 279-419

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Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays

Robert D. Underwood, P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra

Appl. Phys. Lett. 73, 405 (1998); http://dx.doi.org/10.1063/1.121849 (3 pages) | Cited 14 times

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A method of lowering the surface barrier for field emission by using the piezoelectric effect is presented. The piezoelectric effect produces a surface dipole that decreases the surface barrier, which in turn decreases the turn-on voltage of the field emitter. Calculations show that significant reduction of the tunneling barrier can be effected with relatively thin layers of strained InGaN on GaN field emitter arrays. Dramatic reduction of the turn-on voltage from 450 V (GaN field emitter array) to 70 V (InGaN/GaN field emitter array) was observed and can be attributed partly to surface barrier lowering. © 1998 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.45.Db Field emitters and arrays, cold electron emitters
73.40.Cg Contact resistance, contact potential
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Imaging of photogenerated acid in a chemically amplified photoresist

S. J. Bukofsky, G. D. Feke, Q. Wu, R. D. Grober, P. M. Dentinger, and J. W. Taylor

Appl. Phys. Lett. 73, 408 (1998); http://dx.doi.org/10.1063/1.121850 (3 pages) | Cited 15 times

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Chemically amplified photoresists are widely used throughout the semiconductor industry due to the need for high throughput in the lithography process. Knowledge of the location of acid molecules in chemically amplified resists is of paramount importance for the process control of the image formation of almost all the lithographic techniques used in the semiconductor industry today. We have demonstrated a technique based on pH-dependent fluorescence which can measure directly the spatial distribution of the photoacid in photoresist films without the need of any other subsequent process after exposure. By adding a small amount of fluorescent material to the resist, a latent image can be formed when photogenerated acid molecules quench the fluorescence in exposed areas. We demonstrate images formed after exposure of SAL605 resist films to x-ray radiation, with no post-exposure bake, and show that the optical contrast is a function of dose. We also show that the same technique can be utilized for rapid evaluation of photoacid generator efficiency. © 1998 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer

Radio frequency photoinjector using LaB6 cathode and a nitrogen drive laser

P. G. O’Shea, J. A. Lancaster, R. Sachtschale, and C. R. Jones

Appl. Phys. Lett. 73, 411 (1998); http://dx.doi.org/10.1063/1.121851 (3 pages) | Cited 1 time

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We report the successful operation of an inexpensive, simple, and reliable 2.856 GHz radio frequency photoinjector using a rugged LaB6 cathode and a nitrogen drive laser operating at a wavelength of 337 nm. The cathode was operated at a vacuum of ≈ 10−8 Torr, and produced excellent beam quality. The device produces a 1 ns long pulse containing 0.1 nC of charge. The photoelectrons have been accelerated to 270 MeV in traveling-wave linear accelerator. © 1998 American Institute of Physics.
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29.25.Bx Electron sources
07.77.Ka Charged-particle beam sources and detectors
41.75.Lx Other advanced accelerator concepts
29.20.-c Accelerators

Ferroelectric properties of c-oriented YMnO3 films deposited on Si substrates

Takeshi Yoshimura, Norifumi Fujimura, and Taichiro Ito

Appl. Phys. Lett. 73, 414 (1998); http://dx.doi.org/10.1063/1.122269 (3 pages) | Cited 34 times

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We have proposed the use of RMnO3 (R: rare earth elements) films for metal–ferroelectric–semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (ferroelectric RAMs). This reports the production of YMnO3 films on Si substrates for MFSFET with confirmation of the distinct ferroelectricity by P–E hysteresis and capacitance–voltage (C–V) measurement. (0001)-oriented YMnO3 films were obtained on a (111)Si substrate using a pulsed-laser deposition method. Although the Pt/YMnO3/Si structure exhibits a very small remnant polarization of 1.2 nC/cm2, it has clear ferroelectric polarization switching type C–V characteristics with a memory window of 1.1 V. The dielectric constant and the dissipation factor were 27.8 and 0.035, respectively. The polarization switching characteristics are discussed. © 1998 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition
85.30.Tv Field effect devices

Biomolecular recognition using submicron laser lithography

G. V. Shivashankar and A. Libchaber

Appl. Phys. Lett. 73, 417 (1998); http://dx.doi.org/10.1063/1.121852 (3 pages) | Cited 5 times

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Direct beam biomolecular patterning on gold-coated glass substrates, using diffraction limited near infrared laser spot, is used for DNA recognition and specific ligand-receptor interactions. Using a microscope objective lens, a near infrared laser beam is focused onto a glass slide coated with 50-Å gold film. Localized laser absorption results in partial melting and ablation of gold. Spatially moving the laser spot, a stable etched gold pattern is obtained at submicron resolution. During the process, submicron particles in suspension aggregate along the melted gold film. The submicron particles are themselves coated with specific biomolecules, like the protein avidin or single stranded DNA oligomers, for specific biomolecular recognition. This opens many possibilities for biomolecular networks, biochip microfabrication, and bioelectronic circuitry. © 1998 American Institute of Physics.
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87.15.M- Spectra of biomolecules
85.65.+h Molecular electronic devices
87.50.W- Optical/infrared radiation effects
87.80.-y Biophysical techniques (research methods)
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